| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Bondable Metallization Stack That Prevents Diffusionof Oxygen and Gold into Monolithically Integrated Circuits Operating Above 500°C
|
Spry, D.J.
|
|
2011
|
41 |
5 |
p. 915-920
|
artikel
|
| 2 |
Atom Probe Tomography of Zinc Oxide Nanowires
|
Dawahre, Nabil
|
|
2011
|
41 |
5 |
p. 801-808
|
artikel
|
| 3 |
Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation
|
Julian, Nick
|
|
2012
|
41 |
5 |
p. 845-852
|
artikel
|
| 4 |
Comparison of Photonic-Crystal-Enhanced Thermophotovoltaic Devices With and Without a Resonant Cavity
|
Shemeya, Corey
|
|
2012
|
41 |
5 |
p. 928-934
|
artikel
|
| 5 |
Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature
|
Burke, Peter G.
|
|
2012
|
41 |
5 |
p. 948-953
|
artikel
|
| 6 |
Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111)
|
Uddin, Md Rakib
|
|
2012
|
41 |
5 |
p. 824-829
|
artikel
|
| 7 |
Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrierfor Si-Based Spin Transistors
|
Takamura, Yota
|
|
2012
|
41 |
5 |
p. 954-958
|
artikel
|
| 8 |
GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer
|
Jung, Seungyong
|
|
2012
|
41 |
5 |
p. 899-904
|
artikel
|
| 9 |
Growth Studies on Quaternary AlInGaN Layersfor HEMT Application
|
Reuters, Benjamin
|
|
2012
|
41 |
5 |
p. 905-909
|
artikel
|
| 10 |
Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices
|
Curtin, Benjamin M.
|
|
2012
|
41 |
5 |
p. 887-894
|
artikel
|
| 11 |
Impact of Parylene-A Encapsulation on ZnO Nanobridge Sensors and Sensitivity Enhancement via Continuous Ultraviolet Illumination
|
Huang, C.-C.
|
|
2011
|
41 |
5 |
p. 873-880
|
artikel
|
| 12 |
InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs)
|
Lal, Shalini
|
|
2012
|
41 |
5 |
p. 857-864
|
artikel
|
| 13 |
In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates
|
Gagnon, Jarod C.
|
|
2011
|
41 |
5 |
p. 865-872
|
artikel
|
| 14 |
LaAlO3/SrTiO3 Epitaxial Heterostructures by Atomic Layer Deposition
|
Sbrockey, Nick M.
|
|
2012
|
41 |
5 |
p. 819-823
|
artikel
|
| 15 |
MOCVD Growth of Erbium Monoantimonide Thin Filmand Nanocomposites for Thermoelectrics
|
Norris, Kate J.
|
|
2012
|
41 |
5 |
p. 971-976
|
artikel
|
| 16 |
Nanomanufacturing Strategy for Aligned Assemblyof Nanowire Arrays
|
Shin, Kyeong-Sik
|
|
2012
|
41 |
5 |
p. 935-943
|
artikel
|
| 17 |
Near-Infrared Absorption in Lattice-Matched AlInN/GaNand Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates
|
Edmunds, C.
|
|
2012
|
41 |
5 |
p. 881-886
|
artikel
|
| 18 |
Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays
|
Jha, S.
|
|
2012
|
41 |
5 |
p. 853-856
|
artikel
|
| 19 |
Optimization of Molecular Beam Epitaxy (MBE) Growthfor the Development of Mid-Infrared (IR) II–VI Quantum Cascade Lasers
|
Moug, R.T.
|
|
2012
|
41 |
5 |
p. 944-947
|
artikel
|
| 20 |
Performance of MnO2 Crystallographic Phases in Rechargeable Lithium-Air Oxygen Cathode
|
Oloniyo, Olubukun
|
|
2012
|
41 |
5 |
p. 921-927
|
artikel
|
| 21 |
Scalable Electrical Properties of Axial GaAs Nanowirepn-Diodes
|
Gutsche, C.
|
|
2011
|
41 |
5 |
p. 809-812
|
artikel
|
| 22 |
Sensitivity of Strained and Unstrained Structure Growthon GaAs (111)B
|
Mueller, David W.
|
|
2012
|
41 |
5 |
p. 959-964
|
artikel
|
| 23 |
Solution-Processed High-k Dielectric, ZrO2, and Integration in Thin-Film Transistors
|
Lee, Chen-Guan
|
|
2012
|
41 |
5 |
p. 895-898
|
artikel
|
| 24 |
Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C
|
Cheng, Lin
|
|
2012
|
41 |
5 |
p. 910-914
|
artikel
|
| 25 |
Surface Functionalization of Hydrogen-Terminated Si for Biosensing Applications
|
Bertani, Paul
|
|
2012
|
41 |
5 |
p. 830-836
|
artikel
|
| 26 |
Synthesis of Ge1−xSnx Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM)
|
Bhatia, A.
|
|
2012
|
41 |
5 |
p. 837-844
|
artikel
|
| 27 |
Thermoelectric Properties of Mn-Doped Ca5Al2Sb6
|
Zevalkink, Alex
|
|
2012
|
41 |
5 |
p. 813-818
|
artikel
|
| 28 |
Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices
|
Warde, Elias
|
|
2012
|
41 |
5 |
p. 965-970
|
artikel
|
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