nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Absorption strengths in the far-IR spectrum of shallow donors and acceptors in germanium
|
Rotsaert, E. |
|
1987 |
146 |
1-2 |
p. 75-79 5 p. |
artikel |
2 |
Analytic subject index
|
|
|
1987 |
146 |
1-2 |
p. 305- 1 p. |
artikel |
3 |
Contents
|
|
|
1987 |
146 |
1-2 |
p. xi-xii nvt p. |
artikel |
4 |
Editorial Board
|
|
|
1987 |
146 |
1-2 |
p. ii- 1 p. |
artikel |
5 |
Electronic structure of bound excitons in semiconductors
|
Monemar, B. |
|
1987 |
146 |
1-2 |
p. 256-285 30 p. |
artikel |
6 |
Hydrogen in Si: Diffusion and shallow impurity deactivation
|
Capizzi, M. |
|
1987 |
146 |
1-2 |
p. 19-29 11 p. |
artikel |
7 |
Intracenter transitions in hydrogenic donors confined in GaAs-AlGaAs multiple quantum wells
|
Shanabrook, B.V. |
|
1987 |
146 |
1-2 |
p. 121-136 16 p. |
artikel |
8 |
Introduction
|
|
|
1987 |
146 |
1-2 |
p. x- 1 p. |
artikel |
9 |
IR-spectroscopy of impurity complexes in germanium
|
Haller, E.E. |
|
1987 |
146 |
1-2 |
p. 201-211 11 p. |
artikel |
10 |
Lattice distortions around atomic substitutions in II–VI alloys
|
Balzarotti, A. |
|
1987 |
146 |
1-2 |
p. 150-175 26 p. |
artikel |
11 |
Lattice relaxations at substitutional impurities in semiconductors
|
Scheffler, Matthias |
|
1987 |
146 |
1-2 |
p. 176-186 11 p. |
artikel |
12 |
List of contributors
|
|
|
1987 |
146 |
1-2 |
p. 304- 1 p. |
artikel |
13 |
Optical studies of shallow impurities in semiconductor quantum well structures
|
Delalande, C. |
|
1987 |
146 |
1-2 |
p. 112-120 9 p. |
artikel |
14 |
Parity violation and electron-spin resonance of donors in semiconductors
|
Rodriguez, Sergio |
|
1987 |
146 |
1-2 |
p. 212-233 22 p. |
artikel |
15 |
Photoluminescence and infrared absorption studies of double acceptors in germanium
|
Thewalt, M.L.W. |
|
1987 |
146 |
1-2 |
p. 47-64 18 p. |
artikel |
16 |
Picosecond spectroscopy in III–V compounds and alloy semiconductors
|
Mariette, Henri |
|
1987 |
146 |
1-2 |
p. 286-303 18 p. |
artikel |
17 |
Preface
|
|
|
1987 |
146 |
1-2 |
p. ix- 1 p. |
artikel |
18 |
Properties of the 78 meV acceptor in GaAs
|
Moore, W.J. |
|
1987 |
146 |
1-2 |
p. 65-74 10 p. |
artikel |
19 |
Shallow bound excitons in silver halides
|
Von Der Osten, W. |
|
1987 |
146 |
1-2 |
p. 240-255 16 p. |
artikel |
20 |
Shallow impurities in semiconductor quantum wells
|
Chang, Yia-Chung |
|
1987 |
146 |
1-2 |
p. 137-149 13 p. |
artikel |
21 |
Shallow impurity interactions and the metal-insulator transition
|
Bhatt, R.N. |
|
1987 |
146 |
1-2 |
p. 99-111 13 p. |
artikel |
22 |
Shallow impurity states in semiconductors—the early years
|
Kohn, Walter |
|
1987 |
146 |
1-2 |
p. 1-5 5 p. |
artikel |
23 |
Spectroscopic studies of double donors in silicon
|
Grossmann, G. |
|
1987 |
146 |
1-2 |
p. 30-46 17 p. |
artikel |
24 |
Spectroscopic studies of the local symmetry of nitrogen pairs in GaP
|
Gil, Bernard |
|
1987 |
146 |
1-2 |
p. 84-98 15 p. |
artikel |
25 |
Spectroscopy of shallow centers in semiconductors: Progress since 1960
|
Ramdas, A.K. |
|
1987 |
146 |
1-2 |
p. 6-18 13 p. |
artikel |
26 |
The oxygen donor in silicon
|
Stavola, Michael |
|
1987 |
146 |
1-2 |
p. 187-200 14 p. |
artikel |
27 |
Variational model of bound magnetic Polaron and Raman spin flip line shape
|
Benoit ÀLa Guillaume, C. |
|
1987 |
146 |
1-2 |
p. 234-239 6 p. |
artikel |
28 |
Zeeman spectroscopy of impurities in stress-induced uniaxial germanium
|
Fisher, P. |
|
1987 |
146 |
1-2 |
p. 80-83 4 p. |
artikel |