| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A generalised Langevin equation for 1/f noise
|
Llebot, J.E.
|
|
1982
|
115 |
1 |
p. 10-14
5 p.
|
artikel
|
| 2 |
A new interpretation of proportionality between vacancy formation energy and melting point
|
Hayashiuchi, Y.
|
|
1982
|
115 |
1 |
p. 67-71
5 p.
|
artikel
|
| 3 |
A study of the M-shell fluorescence yields of lead
|
Hribar, M.
|
|
1982
|
115 |
1 |
p. 132-136
5 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
1982
|
115 |
1 |
p. ii-
1 p.
|
artikel
|
| 5 |
Electron spin susceptibility of anisotropic metals in the diffusion regime
|
Ehrenfreund, E.
|
|
1982
|
115 |
1 |
p. 27-34
8 p.
|
artikel
|
| 6 |
1/f Noise in positive temperature coefficient thermistors
|
Ralph, J.E.
|
|
1982
|
115 |
1 |
p. 35-40
6 p.
|
artikel
|
| 7 |
Free-boundary tokamak equilibria
|
Akkermans, J.M.
|
|
1982
|
115 |
1 |
p. 103-131
29 p.
|
artikel
|
| 8 |
Magnetic properties of Co[(CH3)3ND]Cl3·2D2O
|
Groenendijk, H.A.
|
|
1982
|
115 |
1 |
p. 63-66
4 p.
|
artikel
|
| 9 |
Magnetic properties of the quasi 1d Ising ferromagnet Co[(CH3)3NH]Cl3·2H2O
|
Groenendijk, H.A.
|
|
1982
|
115 |
1 |
p. 41-62
22 p.
|
artikel
|
| 10 |
New metastable levels in the first spectrum of vanadium
|
Dembczyński, J.
|
|
1982
|
115 |
1 |
p. 101-102
2 p.
|
artikel
|
| 11 |
Nonlinear effects. Three-photon process at high photon densities
|
Mavroyannis, Constantine
|
|
1982
|
115 |
1 |
p. 77-100
24 p.
|
artikel
|
| 12 |
Quadrupolar ordering in a Γ3-doublet system studied by 165Ho nuclear magnetic resonance: Cs2NaHoCl6
|
Bongers, E.
|
|
1982
|
115 |
1 |
p. 72-74
3 p.
|
artikel
|
| 13 |
The molecular dynamics in highly compressed methane gas studied by slow neutron scattering experiments
|
Johnson, T.
|
|
1982
|
115 |
1 |
p. 15-26
12 p.
|
artikel
|
| 14 |
Thermal expansion of (giant moment) Pd Mn and (RKKY) PdH Mn spin glasses
|
Geerken, B.M.
|
|
1982
|
115 |
1 |
p. 5-9
5 p.
|
artikel
|
| 15 |
Transmission of electromagnetic radiation through an electron inversion layer of finite thickness in a metal-oxide-semiconductor (MOS) structure
|
O'Connell, R.F.
|
|
1982
|
115 |
1 |
p. 1-4
4 p.
|
artikel
|
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