| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaAs/GaAs superlattice multi-quantum-well laser diode
|
Imamoto, H.
|
|
1989
|
5 |
2 |
p. 167-170
4 p.
|
artikel
|
| 2 |
Ballistic Impurity Level Transistor (BILT)
|
Sone, Jun'ichi
|
|
1989
|
5 |
2 |
p. 159-161
3 p.
|
artikel
|
| 3 |
Band-edge offsets in PbSePbEuSe and PbTePbEuTeSe heterostructures deduced from electron-beam-induced current
|
Heinrich, H.
|
|
1989
|
5 |
2 |
p. 175-179
5 p.
|
artikel
|
| 4 |
Band-gap renormalization in multiple quantum wells: Evidence against the rigid shift model
|
Abram, I.
|
|
1989
|
5 |
2 |
p. 181-184
4 p.
|
artikel
|
| 5 |
Bias-induced conductance change in NPNP doping-modulated amorphous silicon superlattices
|
Byueng-Su Yoo,
|
|
1989
|
5 |
2 |
p. 153-156
4 p.
|
artikel
|
| 6 |
Carrier dynamics in (GaAs)m(AlAs)n superlattices
|
Peter, G.
|
|
1989
|
5 |
2 |
p. 197-200
4 p.
|
artikel
|
| 7 |
CdS and CdSe single and multilayer structures grown on GaAs
|
Halsall, M.P.
|
|
1989
|
5 |
2 |
p. 189-192
4 p.
|
artikel
|
| 8 |
Competition between interface and bulk phonons in GaAs/AlAs and InAs/GaSb quantum wells
|
Degani, Marcos H.
|
|
1989
|
5 |
2 |
p. 141-144
4 p.
|
artikel
|
| 9 |
DC and far-infrared experiments on one-dimensional multi-layered quantum wires
|
Demel, T.
|
|
1989
|
5 |
2 |
p. 287-291
5 p.
|
artikel
|
| 10 |
Double quantum wire Aharonov-Bohm interferometers for possible LN2 temperature operation
|
Bandyopadhyay, S.
|
|
1989
|
5 |
2 |
p. 239-245
7 p.
|
artikel
|
| 11 |
Effect of scattering on the resonant tunneling diode current
|
Sinkkonen, J.
|
|
1989
|
5 |
2 |
p. 269-272
4 p.
|
artikel
|
| 12 |
Effects of thermal annealing on the confined electronic states of InxGa1−xAs/GaAs strained-layer superlattices
|
Iikawa, F.
|
|
1989
|
5 |
2 |
p. 273-278
6 p.
|
artikel
|
| 13 |
Elastic scattering in resonant tunneling devices with one degree of freedom
|
Wolak, E.
|
|
1989
|
5 |
2 |
p. 251-253
3 p.
|
artikel
|
| 14 |
Electronic structure and band gap of (GaP)1(InP)1(111) superlattice
|
Kurimoto, Takeshi
|
|
1989
|
5 |
2 |
p. 171-173
3 p.
|
artikel
|
| 15 |
Electron transport properties in GaAs/AlGaAs quasi one-dimensional fets
|
Ohshima, T.
|
|
1989
|
5 |
2 |
p. 247-250
4 p.
|
artikel
|
| 16 |
Far-infrared spectroscopy of electrons in coupled double quantum wells
|
Lorke, A.
|
|
1989
|
5 |
2 |
p. 279-282
4 p.
|
artikel
|
| 17 |
Femtosecond studies of real-space transfer in AlGaAs/GaAs heterostructures
|
Christanell, R.
|
|
1989
|
5 |
2 |
p. 193-196
4 p.
|
artikel
|
| 18 |
Generation-recombination noise associated with localized states in the quantum hall regime
|
Kil, A.J.
|
|
1989
|
5 |
2 |
p. 255-258
4 p.
|
artikel
|
| 19 |
Hole resonant tunneling in Si/SiGe heterostructures
|
Liu, H.C.
|
|
1989
|
5 |
2 |
p. 213-217
5 p.
|
artikel
|
| 20 |
Hole transport and relaxation in the valence bands of a GaAs/AlAs quantum well
|
Kelsall, R.W.
|
|
1989
|
5 |
2 |
p. 207-211
5 p.
|
artikel
|
| 21 |
Hydrogen ion-beam induced changes in the photoluminescence of GaSb/AlSb MQW structures
|
Capizzi, M.
|
|
1989
|
5 |
2 |
p. 297-299
3 p.
|
artikel
|
| 22 |
Impact of MBE-growth rate on optical properties of AlGaAs/GaAs quantum well structures
|
Maierhofer, Ch.
|
|
1989
|
5 |
2 |
p. 301-304
4 p.
|
artikel
|
| 23 |
Infrared photocurrent in a short period sawtooth doping superlattice
|
Ullrich, B.
|
|
1989
|
5 |
2 |
p. 163-165
3 p.
|
artikel
|
| 24 |
Intersubband absorption in GaAs/AlGaAs quantum wells between 4.2K and room temperature
|
von Allmen, P.
|
|
1989
|
5 |
2 |
p. 259-263
5 p.
|
artikel
|
| 25 |
Intersubband spectroscopy in GaAs/GaAlAs multi-quantum-well structures: Photoinduced absorption
|
Olszakier, M.
|
|
1989
|
5 |
2 |
p. 283-286
4 p.
|
artikel
|
| 26 |
Investigation of amorphous a-Si:H/a-Si1−xCx:H multi-quantum-well structures
|
De Seta, M.
|
|
1989
|
5 |
2 |
p. 149-152
4 p.
|
artikel
|
| 27 |
Localized and extended exciton states in narrow GaAs/AlGaAs quantum wells
|
Brener, I.
|
|
1989
|
5 |
2 |
p. 223-226
4 p.
|
artikel
|
| 28 |
Magneto-tunneling studies of charge build-up in double barrier diodes
|
Thomas, D.
|
|
1989
|
5 |
2 |
p. 219-222
4 p.
|
artikel
|
| 29 |
Memory phenomena in novel floating-gate GaAs/AlGaAs structures with graded gap injector
|
Beltram, Fabio
|
|
1989
|
5 |
2 |
p. 293-296
4 p.
|
artikel
|
| 30 |
Optical transitions in (Si)4 (Ge)4 superlattices
|
Hughes, D.T.
|
|
1989
|
5 |
2 |
p. 185-188
4 p.
|
artikel
|
| 31 |
Plasmons and intersubband resonances in quasi two-dimensional systems: Nonlocal coupling and lineshapes
|
Ehlers, D.H.
|
|
1989
|
5 |
2 |
p. 265-268
4 p.
|
artikel
|
| 32 |
Quantum-well exciton polariton emission from multi-quantum-well wire structures
|
Kohl, M.
|
|
1989
|
5 |
2 |
p. 235-238
4 p.
|
artikel
|
| 33 |
Resonant inter-subband optic phonon scattering in quasi-one dimensional structures
|
Briggs, S.
|
|
1989
|
5 |
2 |
p. 145-148
4 p.
|
artikel
|
| 34 |
Resonant tunneling of variously strained Si/GexSi1−x/Si heterostructures
|
Wang, K.L.
|
|
1989
|
5 |
2 |
p. 201-206
6 p.
|
artikel
|
| 35 |
Resonant tunnelings from a quantum-well molecule
|
Nakagawa, T.
|
|
1989
|
5 |
2 |
p. 231-234
4 p.
|
artikel
|
| 36 |
Temperature dependence of the polaron mass in a GaAsGa1−xAlxAs quantum well wire
|
Degani, Marcos H.
|
|
1989
|
5 |
2 |
p. 137-139
3 p.
|
artikel
|
| 37 |
Well width dependence of the carrier life time in InGaAs/InP quantum wells
|
Cebulla, U.
|
|
1989
|
5 |
2 |
p. 227-230
4 p.
|
artikel
|
| 38 |
Wigner crystallization and Coulomb gap in HgSe:Fe
|
Jantsch, W.
|
|
1989
|
5 |
2 |
p. 157-158
2 p.
|
artikel
|
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