| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of indirect AlGaAs AlGaAs superlattices using low-temperature optical spectroscopic techniques
|
Pistol, M.-E.
|
|
1989
|
5 |
1 |
p. 119-122
4 p.
|
artikel
|
| 2 |
Atomic layer MBE growth and characterization of AlAs InAs strained layer superlattices on GaAs
|
González, L.
|
|
1989
|
5 |
1 |
p. 5-9
5 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
1989
|
5 |
1 |
p. IFC-
1 p.
|
artikel
|
| 4 |
Effect of dielectric anisotropy of quantum wells on reflection
|
Zhang, C.
|
|
1989
|
5 |
1 |
p. 65-69
5 p.
|
artikel
|
| 5 |
Electron-spin-resonance in an AlGaAsGaAs single-side doped quantum-well
|
Malcher, F.
|
|
1989
|
5 |
1 |
p. 99-102
4 p.
|
artikel
|
| 6 |
Emission of GaAs AlxGa1−xAs asymmetric modulation-doped multiple quantum wells under different excitation conditions by Kr+ and Ar+ lasers
|
Ameneses, E.
|
|
1989
|
5 |
1 |
p. 11-14
4 p.
|
artikel
|
| 7 |
Folded, confined, interface, surface, and slab vibrational modes in semiconductor superlattices
|
Cardona, M.
|
|
1989
|
5 |
1 |
p. 27-42
16 p.
|
artikel
|
| 8 |
GaAs AlGaAs resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and height
|
Söderström, Jan
|
|
1989
|
5 |
1 |
p. 109-113
5 p.
|
artikel
|
| 9 |
Interpretation of photoluminescence spectra in partially interdiffused PbTe Pb1−xSnxTe superlattices
|
Kriechbaum, M.
|
|
1989
|
5 |
1 |
p. 93-98
6 p.
|
artikel
|
| 10 |
Intrasubband transitions and well capture via confined, guided and interface L0 phonons in superlattices
|
Babiker, M.
|
|
1989
|
5 |
1 |
p. 133-136
4 p.
|
artikel
|
| 11 |
Negative photoconductivity in modulation-doped quantum wells
|
Höpfel, R.A.
|
|
1989
|
5 |
1 |
p. 15-18
4 p.
|
artikel
|
| 12 |
Optical properties of some III–V strained-layer superlattices
|
Marzin, J.Y.
|
|
1989
|
5 |
1 |
p. 51-58
8 p.
|
artikel
|
| 13 |
Optical studies of the transition from 3D to 2D properties for excitons in CdTe Cd1−xZnxTe quantum wells
|
Tuffigo, H.
|
|
1989
|
5 |
1 |
p. 83-86
4 p.
|
artikel
|
| 14 |
Phonons in amorphous superlattices
|
Santos, P.V.
|
|
1989
|
5 |
1 |
p. 43-50
8 p.
|
artikel
|
| 15 |
Photoconductivity in InGaAsP InP -superlattices: Subband-continuum transitions and band offsets
|
Zachau, M.
|
|
1989
|
5 |
1 |
p. 19-21
3 p.
|
artikel
|
| 16 |
Photoluminescence investigation of an In0.15Ga0.85As GaAs coupled double quantum well
|
Xinghua, Wang
|
|
1989
|
5 |
1 |
p. 79-81
3 p.
|
artikel
|
| 17 |
Plasmon excitations in layered 2D electron gas systems with large in-plane wave vector
|
Egeler, T.
|
|
1989
|
5 |
1 |
p. 123-126
4 p.
|
artikel
|
| 18 |
Publisher's note
|
|
|
1989
|
5 |
1 |
p. i-
1 p.
|
artikel
|
| 19 |
Search for stable configuration of (GaAs)1(InAs)1 (111) superlattice
|
Magri, R.
|
|
1989
|
5 |
1 |
p. 1-3
3 p.
|
artikel
|
| 20 |
Shallow impurity levels in GaAs(Ga, Al)As quantum wells
|
Oliveira, Luiz E.
|
|
1989
|
5 |
1 |
p. 23-25
3 p.
|
artikel
|
| 21 |
Si Ge strained-layer superlattices on Si(100), Ge Si (100) and Si1−xGex/Si(100)
|
Ospelt, M.
|
|
1989
|
5 |
1 |
p. 71-77
7 p.
|
artikel
|
| 22 |
Skipping orbits, traversing trajectories, and quantum ballistic transport in microstructures
|
Beenakker, C.W.J.
|
|
1989
|
5 |
1 |
p. 127-132
6 p.
|
artikel
|
| 23 |
Spin relaxation in type I and II GaAs AlGaAs quantum wells
|
van der Poel, W.A.J.A.
|
|
1989
|
5 |
1 |
p. 115-118
4 p.
|
artikel
|
| 24 |
Theory of excitons in GaAsGa1−xAlxAs quantum wells including valence band mixing
|
Andreani, Lucio Claudio
|
|
1989
|
5 |
1 |
p. 59-63
5 p.
|
artikel
|
| 25 |
The thermoelectric effect in silicon on sapphire inversion layers
|
Syme, R.T.
|
|
1989
|
5 |
1 |
p. 103-107
5 p.
|
artikel
|
| 26 |
Transport characterization of HgTeCdTe superlattice band structure
|
Meyer, J.R.
|
|
1989
|
5 |
1 |
p. 87-92
6 p.
|
artikel
|
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