nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An effective potential approach for extended density of states in heterostructures
|
Colak, S. |
|
1988 |
4 |
4-5 |
p. 571-576 6 p. |
artikel |
2 |
A tunneling measurement of the electronic density of states of a superlattice
|
England, P. |
|
1988 |
4 |
4-5 |
p. 409-411 3 p. |
artikel |
3 |
Auger recombination in GaSb AlSb multi quantum well heterostructures
|
Zielinski, E. |
|
1988 |
4 |
4-5 |
p. 473-478 6 p. |
artikel |
4 |
Calculation of transition temperatures of superconductor-metal sandwiches and superlattices
|
Auvil, P.R. |
|
1988 |
4 |
4-5 |
p. 431-433 3 p. |
artikel |
5 |
Characterization of structural and magnetic order of Er/Y superlattices
|
Borchers, J. |
|
1988 |
4 |
4-5 |
p. 439-442 4 p. |
artikel |
6 |
Determination of the valence band offset at a HgTe/CdTe heterojunction by magnetooptics
|
Yang, Z. |
|
1988 |
4 |
4-5 |
p. 559-563 5 p. |
artikel |
7 |
Domain instability in semiconductor superlattices
|
Gružinskis, V. |
|
1988 |
4 |
4-5 |
p. 627-628 2 p. |
artikel |
8 |
Electronic properties of pseudomorphic InGaAs AlGaAs (on GaAs) and InGaAs InAlAs (on InP) Modfet structures
|
Jaffe, Mark |
|
1988 |
4 |
4-5 |
p. 395-404 10 p. |
artikel |
9 |
Electronic states of semiconductor/metal/semiconductor quantum well structures
|
Huberman, M.L. |
|
1988 |
4 |
4-5 |
p. 555-558 4 p. |
artikel |
10 |
Electronic structure of quantum-well states revealed under high pressures
|
Wolford, D.J. |
|
1988 |
4 |
4-5 |
p. 525-535 11 p. |
artikel |
11 |
Electronic structure of strained layer Si GexSi1−x superlattices from tight binding theory
|
Rücker, H. |
|
1988 |
4 |
4-5 |
p. 511-513 3 p. |
artikel |
12 |
Energy levels and magneto-electric subbands in some quasi uni-dimensional semiconductor heterostructures
|
Brum, J.A. |
|
1988 |
4 |
4-5 |
p. 443-448 6 p. |
artikel |
13 |
Enhanced and quenched Raman scattering by interface phonons in semiconductor superlattices: What are the defects?
|
Gammon, D. |
|
1988 |
4 |
4-5 |
p. 405-407 3 p. |
artikel |
14 |
Epitaxial growth of PbTe on (111)BaF2 and (100)GaAs
|
Clemens, H. |
|
1988 |
4 |
4-5 |
p. 591-596 6 p. |
artikel |
15 |
Errata
|
|
|
1988 |
4 |
4-5 |
p. i- 1 p. |
artikel |
16 |
EXAFS studies of the microstructure of semiconductor alloys, defects, and metal-semiconductor interfaces
|
Bunker, Bruce A. |
|
1988 |
4 |
4-5 |
p. 489-492 4 p. |
artikel |
17 |
Excitons and polaritons in semiconductor/insulator quantum wells and superlattices
|
Keldysh, L.V. |
|
1988 |
4 |
4-5 |
p. 637-642 6 p. |
artikel |
18 |
Extended and local plasmons in a lateral superlattice
|
Heitmann, D. |
|
1988 |
4 |
4-5 |
p. 503-506 4 p. |
artikel |
19 |
Field spectrum anisotropy in multiple quantum-well semiconductor lasers subjected to high magnetic fields
|
Vahala, Kerry |
|
1988 |
4 |
4-5 |
p. 507-510 4 p. |
artikel |
20 |
Free carrier scattering from quasi-2D optical phonons in semiconductor quantum wells and superlattices
|
Wendler, L. |
|
1988 |
4 |
4-5 |
p. 577-580 4 p. |
artikel |
21 |
Hole subbands in one-dimensional quantum well wires
|
Sweeny, Mark |
|
1988 |
4 |
4-5 |
p. 623-626 4 p. |
artikel |
22 |
Hot electron transistors grown by MOCVD
|
Kawai, H. |
|
1988 |
4 |
4-5 |
p. 545-549 5 p. |
artikel |
23 |
Ion-implantation damage and annealing effects in (InGa)As GaAs strained-layer semiconductor systems
|
Myers, D.R. |
|
1988 |
4 |
4-5 |
p. 585-589 5 p. |
artikel |
24 |
Low temperature characterization of AlSi diffusion kinetics
|
Patrick Dugan, M. |
|
1988 |
4 |
4-5 |
p. 565-570 6 p. |
artikel |
25 |
Magnetic properties of Fe Mn superlattices
|
Motomura, Yoshihiro |
|
1988 |
4 |
4-5 |
p. 479-483 5 p. |
artikel |
26 |
Many-electron edge singularity at the Fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells
|
Nash, K.J. |
|
1988 |
4 |
4-5 |
p. 553-554 2 p. |
artikel |
27 |
Molecular dynamic studies of chemical reactions at semiconductor surfaces
|
Menon, Madhu |
|
1988 |
4 |
4-5 |
p. 629-631 3 p. |
artikel |
28 |
Negative differential resistance in InGaAs strained layer heterostructures
|
Lee, G.S. |
|
1988 |
4 |
4-5 |
p. 537-540 4 p. |
artikel |
29 |
Negative resistance switching in superlattices: Resonant tunneling or hot electron transfer?
|
Sibille, A. |
|
1988 |
4 |
4-5 |
p. 459-463 5 p. |
artikel |
30 |
PbTeSnTe superlattices
|
Tamor, M.A. |
|
1988 |
4 |
4-5 |
p. 493-496 4 p. |
artikel |
31 |
Phonons in semiconductor superlattices
|
Molinari, E. |
|
1988 |
4 |
4-5 |
p. 449-457 9 p. |
artikel |
32 |
Photoexcited and forbidden LO mode raman scattering in epitaxial InP (001) layers
|
Bland, J.A.C. |
|
1988 |
4 |
4-5 |
p. 485-487 3 p. |
artikel |
33 |
Photoluminescence excitation and resonance Raman spectroscopy of unconfined transitions in GaAs Al x Ga 1−x As superlattices
|
Jung, P.S. |
|
1988 |
4 |
4-5 |
p. 581-583 3 p. |
artikel |
34 |
Photoreflectance, Raman scattering, photoluminescence and transmission electron microscopy of MOCVD GaAs GaAlAs multiple quantum wells
|
Pan, S.H. |
|
1988 |
4 |
4-5 |
p. 609-617 9 p. |
artikel |
35 |
Proximity effect coupled V Cr superlattices
|
Davis, B.M. |
|
1988 |
4 |
4-5 |
p. 465-471 7 p. |
artikel |
36 |
Quantum transport calculation of the frequency response of resonant-tunneling heterostructure devices
|
Frensley, William R. |
|
1988 |
4 |
4-5 |
p. 497-501 5 p. |
artikel |
37 |
Quantum transport in quasi-one-dimensional GaAsAlxGa1−xAs heterostructure devices
|
Chang, A.M. |
|
1988 |
4 |
4-5 |
p. 515-520 6 p. |
artikel |
38 |
Screening of the exciton-LO phonon interaction in In 0.53 Ga 0.47 As InP quantum wells
|
Nash, K.J. |
|
1988 |
4 |
4-5 |
p. 551-552 2 p. |
artikel |
39 |
Shubnikov-de Haas measurements of the 2-D electron gas in pseudomorphic In0.1Ga0.9As grown on GaAs
|
Szydlik, P.P. |
|
1988 |
4 |
4-5 |
p. 619-621 3 p. |
artikel |
40 |
Stability and metastability of semiconductor strained-layer structures
|
Dodson, Brian W. |
|
1988 |
4 |
4-5 |
p. 417-422 6 p. |
artikel |
41 |
Strained layer and lattice matched transverse junction stripe quantum well lasers for continuous room temperature operation
|
Kolbas, R.M. |
|
1988 |
4 |
4-5 |
p. 603-608 6 p. |
artikel |
42 |
Structural studies of (Ga,In)(As,P) alloys and (InAs)m(GaAs)n strained-layer superlattices by fluorescence-detected EXAFS
|
Oyanagi, Hiroyuki |
|
1988 |
4 |
4-5 |
p. 413-416 4 p. |
artikel |
43 |
Study of impurity induced disordering in AlGaAs GaAs multi-quantum well structures by photothermal deflection spectroscopy and photoluminescence
|
Shieh, C. |
|
1988 |
4 |
4-5 |
p. 597-602 6 p. |
artikel |
44 |
Surface acoustic wave-superlattice interaction in separate-medium structure
|
Tabib-Azar, M. |
|
1988 |
4 |
4-5 |
p. 643-651 9 p. |
artikel |
45 |
The role of thermodynamic phase diagrams and lattice matching in superlattice growth
|
Schuller, Ivan K. |
|
1988 |
4 |
4-5 |
p. 521-524 4 p. |
artikel |
46 |
The theory of electron-polar phonon scattering rates in semiconductor micro-structures
|
Mason, B.A. |
|
1988 |
4 |
4-5 |
p. 423-429 7 p. |
artikel |
47 |
Transport in GaAs heterojunction ring structures
|
Ford, C.J.B. |
|
1988 |
4 |
4-5 |
p. 541-544 4 p. |
artikel |
48 |
Ultrafast optical nonlinearity in quantum well structures with DC electric field
|
Yamanishi, Masamichi |
|
1988 |
4 |
4-5 |
p. 633-636 4 p. |
artikel |
49 |
X-ray studies of interfacial roughness in ZnSe GaAs heterostructures
|
Krol, A. |
|
1988 |
4 |
4-5 |
p. 435-437 3 p. |
artikel |