| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Bulk and surface collective modes in metal superlattices
|
Apell, P.
|
|
1986
|
2 |
4 |
p. 297-301
5 p.
|
artikel
|
| 2 |
Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys
|
Kolodzey, J.
|
|
1986
|
2 |
4 |
p. 391-396
6 p.
|
artikel
|
| 3 |
Conduction electron spin resonance (CESR) of 2D electrons in a GaInAs/InP quantum well
|
Cavenett, B.C.
|
|
1986
|
2 |
4 |
p. 323-327
5 p.
|
artikel
|
| 4 |
Confined longitudinal and transverse phonons in GaAs/AlAs superlattices
|
Molinari, E.
|
|
1986
|
2 |
4 |
p. 397-400
4 p.
|
artikel
|
| 5 |
Correlation between Si diffusion and Si-induced disordering in AlGaAs/GaAs superlattices
|
Nakashima, Hisao
|
|
1986
|
2 |
4 |
p. 303-307
5 p.
|
artikel
|
| 6 |
Cyclotron resonance and screening effects in GaAs-GaAlAs heterojunctions
|
Hopkins, M.A.
|
|
1986
|
2 |
4 |
p. 319-322
4 p.
|
artikel
|
| 7 |
Dynamic magnetoconductivity of inversion electrons in periodic MOS-microstructures on Si
|
Pohlmann, H.
|
|
1986
|
2 |
4 |
p. 293-296
4 p.
|
artikel
|
| 8 |
Effective-mass eigenfunctions in superlattices and their role in well-capture
|
Babiker, M.
|
|
1986
|
2 |
4 |
p. 287-291
5 p.
|
artikel
|
| 9 |
Electronic structure of Si Si 1−x Gex and Si Si 1−x Snx strained layer superlattices
|
Morrison, Ian
|
|
1986
|
2 |
4 |
p. 329-333
5 p.
|
artikel
|
| 10 |
Electron transport in the conduction channel of the HEMT
|
Ravaioli, U.
|
|
1986
|
2 |
4 |
p. 377-380
4 p.
|
artikel
|
| 11 |
Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography
|
Bernstein, G.
|
|
1986
|
2 |
4 |
p. 373-376
4 p.
|
artikel
|
| 12 |
Field-induced lifetime enhancement and ionization of excitons in GaAs/AlGaAs quantum wells
|
Polland, H.-J.
|
|
1986
|
2 |
4 |
p. 309-312
4 p.
|
artikel
|
| 13 |
Investigation of intrinsic and extrinsic photoluminescence in GaAs Ga 1−x ALxAs MQW
|
Balkan, N.
|
|
1986
|
2 |
4 |
p. 357-361
5 p.
|
artikel
|
| 14 |
Monte Carlo study of hot electrons in quantum wells
|
Lugli, P.
|
|
1986
|
2 |
4 |
p. 335-338
4 p.
|
artikel
|
| 15 |
On the stability of thin epitaxial NiSi2 layers on Si (111)
|
von Känel, H.
|
|
1986
|
2 |
4 |
p. 363-368
6 p.
|
artikel
|
| 16 |
Photo-luminescence studies of hot electrons and real space transfer effect in a double quantum well superlattice
|
Sawaki, N.
|
|
1986
|
2 |
4 |
p. 281-285
5 p.
|
artikel
|
| 17 |
Publisher's note
|
|
|
1986
|
2 |
4 |
p. 279-
1 p.
|
artikel
|
| 18 |
Quasi-gas transition layers occurring in MBE growth of microdevices and superlattices
|
Herman, Marian A.
|
|
1986
|
2 |
4 |
p. 345-348
4 p.
|
artikel
|
| 19 |
Single impurity-assisted tunnelling in sub-micron n+n−n+ multilayers
|
Main, P.C.
|
|
1986
|
2 |
4 |
p. 385-389
5 p.
|
artikel
|
| 20 |
Temperature dependence of the tunable luminescence of GaAs doping superlattices
|
Köhler, K.
|
|
1986
|
2 |
4 |
p. 339-343
5 p.
|
artikel
|
| 21 |
Theory of the doped quantum well APD in the GaAs/AlGaAs and GaInAs/AlInAs material systems
|
Brennan, K.F.
|
|
1986
|
2 |
4 |
p. 349-355
7 p.
|
artikel
|
| 22 |
Transport and persistent photoconductivity in INP/INGAAS single quantum wells
|
Kane, M.J.
|
|
1986
|
2 |
4 |
p. 369-372
4 p.
|
artikel
|
| 23 |
Universal conductance fluctuations in the magnetoresistance of submicron n+GaAs wires
|
Whittington, G.P.
|
|
1986
|
2 |
4 |
p. 381-383
3 p.
|
artikel
|
| 24 |
Vertical transport in multilayer semiconductor structures
|
Kelly, M.J.
|
|
1986
|
2 |
4 |
p. 313-317
5 p.
|
artikel
|
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