| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A perturbation expansion for correlation functions via the Wigner distribution
|
Dickman, R.
|
|
1986
|
2 |
1 |
p. 57-64
8 p.
|
artikel
|
| 2 |
A simple lattice-matching guide for superlattices and heterostructures of tetrahedrally-bonded semiconductors
|
Furdyna, J.K.
|
|
1986
|
2 |
1 |
p. 89-96
8 p.
|
artikel
|
| 3 |
Comparison of approaches for achieving very high speed in GaAs VLSI devices
|
Kremer, R.E.
|
|
1986
|
2 |
1 |
p. 69-73
5 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
1986
|
2 |
1 |
p. IFC-
1 p.
|
artikel
|
| 5 |
Editor's note
|
Dow, John D.
|
|
1986
|
2 |
1 |
p. 3-
1 p.
|
artikel
|
| 6 |
Excited state resonant tunneling in GaAsAlxGa1−xAs double barrier heterostructures
|
Reed, Mark A.
|
|
1986
|
2 |
1 |
p. 65-67
3 p.
|
artikel
|
| 7 |
Interconnections and architecture for ensembles of microstructures
|
Ferry, D.K.
|
|
1986
|
2 |
1 |
p. 41-44
4 p.
|
artikel
|
| 8 |
International competitiveness
|
Burger, Robert M.
|
|
1986
|
2 |
1 |
p. 13-16
4 p.
|
artikel
|
| 9 |
Materials issues underlying compound semiconductor devices
|
Lester, S.D.
|
|
1986
|
2 |
1 |
p. 33-40
8 p.
|
artikel
|
| 10 |
Moment-equation representation of the dissipative quantum Liouville equation
|
Stroscio, Michael A.
|
|
1986
|
2 |
1 |
p. 83-87
5 p.
|
artikel
|
| 11 |
Monte Carlo study of the quasi two-dimensional electron gas in the high electron mobility transistor
|
Ravaioli, U.
|
|
1986
|
2 |
1 |
p. 75-78
4 p.
|
artikel
|
| 12 |
Pattern transfer
|
Coburn, J.W.
|
|
1986
|
2 |
1 |
p. 17-25
9 p.
|
artikel
|
| 13 |
Perspective on the future of microstructure technology
|
Iafrate, G.J.
|
|
1986
|
2 |
1 |
p. 5-7
3 p.
|
artikel
|
| 14 |
Publisher's note
|
|
|
1986
|
2 |
1 |
p. 1-
1 p.
|
artikel
|
| 15 |
Quantum-based electronic devices
|
Stroscio, Michael A.
|
|
1986
|
2 |
1 |
p. 45-47
3 p.
|
artikel
|
| 16 |
Space-charge limitations of tunneling resonances
|
Riccò, B.
|
|
1986
|
2 |
1 |
p. 79-81
3 p.
|
artikel
|
| 17 |
The future of microstructure technology — The industry view
|
Bate, R.T.
|
|
1986
|
2 |
1 |
p. 9-11
3 p.
|
artikel
|
| 18 |
The growth of ultra-thin layer superlattices by metalorganic chemical vapor deposition
|
Costrini, G.
|
|
1986
|
2 |
1 |
p. 27-31
5 p.
|
artikel
|
| 19 |
Tunnelling and hot electron effects in single barrier (AlGa)As GaAs heterostructure devices
|
Eaves, L.
|
|
1986
|
2 |
1 |
p. 49-55
7 p.
|
artikel
|
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