| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept
|
Tahaei, Seyyedeh Hoda
|
|
|
125 |
C |
p. 168-176
|
artikel
|
| 2 |
A highly sensitive optofluidic-gas sensor using two dimensional photonic crystals
|
Anamoradi, Aysan
|
|
|
125 |
C |
p. 302-309
|
artikel
|
| 3 |
Annealing ambient effect on electrical properties of ZnO:Al/p-Si heterojunctions
|
Urper, Osman
|
|
|
125 |
C |
p. 81-87
|
artikel
|
| 4 |
A novel dual trench gate power device by effective drift region structure
|
Zareiee, Meysam
|
|
|
125 |
C |
p. 8-15
|
artikel
|
| 5 |
A novel technology for turn-on voltage reduction of high-performance lateral heterojunction diode with source-gate shorted anode
|
Wang, Zeheng
|
|
|
125 |
C |
p. 144-150
|
artikel
|
| 6 |
Bulk and surface plasmons in graphene finite superlattices
|
Gonzalez de la Cruz, G.
|
|
|
125 |
C |
p. 315-321
|
artikel
|
| 7 |
Circumferential growth of zinc oxide nanostructure anchored over carbon fabric and its photocatalytic performance towards p-nitrophenol
|
Allen, Joseph Anthuvan
|
|
|
125 |
C |
p. 159-167
|
artikel
|
| 8 |
Corrigendum to “Annealing effect on the electrical properties of IF(CN2)2-meta based OTFTs: Thermal behavior and modeling of charge transport” [Superlattice. Microst. 123 (2018) 286–296]
|
Arfaoui, N.
|
|
|
125 |
C |
p. 80
|
artikel
|
| 9 |
Crucial influential factor on background electron concentration in semi-polar (11 2 ¯ 2) plane AlGaN epi-layers
|
Yang, Gang
|
|
|
125 |
C |
p. 338-342
|
artikel
|
| 10 |
Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing
|
Jayaswal, Neha
|
|
|
125 |
C |
p. 256-270
|
artikel
|
| 11 |
Design and performance analysis of Dual-Gate All around Core-Shell Nanotube TFET
|
Kumar, Naveen
|
|
|
125 |
C |
p. 356-364
|
artikel
|
| 12 |
Editorial Board
|
|
|
|
125 |
C |
p. ii
|
artikel
|
| 13 |
Effect of hydrogen-like impurity on a qubit in quantum pseudodot at finite temperature
|
Xiao, Jing-Lin
|
|
|
125 |
C |
p. 233-236
|
artikel
|
| 14 |
Effect of temperature on structural, optical and electrical properties of pulsed-laser deposited W-doped V2O5 thin films
|
Sinha, Sudip K.
|
|
|
125 |
C |
p. 88-94
|
artikel
|
| 15 |
Electronic and nuclear magnetic anisotropy of cobalt-doped ZnO single-crystalline microwires
|
Savoyant, A.
|
|
|
125 |
C |
p. 113-119
|
artikel
|
| 16 |
Electronic properties and optical behaviors of bulk and monolayer ZrS2: A theoretical investigation
|
Vu, Tuan V.
|
|
|
125 |
C |
p. 205-213
|
artikel
|
| 17 |
Electron surface scattering and quantum finite-size effect on dielectric and optical properties of thin gold films
|
Liu, Guanghui
|
|
|
125 |
C |
p. 322-329
|
artikel
|
| 18 |
Enhanced structural and electrical properties of nonpolar a-plane p-type AlGaN/GaN superlattices
|
Wu, Zili
|
|
|
125 |
C |
p. 310-314
|
artikel
|
| 19 |
Enhancement of optical gain in quantum dot ensemble with electric field
|
Guin, Shampa
|
|
|
125 |
C |
p. 151-158
|
artikel
|
| 20 |
Fabrication of vertically conducting near ultraviolet LEDs on SiC substrates
|
Han, Xu
|
|
|
125 |
C |
p. 348-355
|
artikel
|
| 21 |
Facile synthesis and study of the photochromic properties of deep eutectic solvent-templated cuboctahedral-WO3/MoO3 nanocomposites
|
Oderinde, Olayinka
|
|
|
125 |
C |
p. 103-112
|
artikel
|
| 22 |
Gradient doping of copper in ZnO nanorod photoanode by electrodeposition for enhanced charge separation in photoelectrochemical water splitting
|
Rasouli, Fatemeh
|
|
|
125 |
C |
p. 177-189
|
artikel
|
| 23 |
Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer
|
Wu, Hualong
|
|
|
125 |
C |
p. 343-347
|
artikel
|
| 24 |
High-performance quasi-vertical GaN Schottky diode with low turn-on voltage
|
Bian, Zhao-Ke
|
|
|
125 |
C |
p. 295-301
|
artikel
|
| 25 |
4H-SiC superjunction trench MOSFET with reduced saturation current
|
He, Qingyuan
|
|
|
125 |
C |
p. 58-65
|
artikel
|
| 26 |
Impact of side passivation on the electronic structures and optical properties of GeSe nanobelts
|
Ma, Qiuyan
|
|
|
125 |
C |
p. 365-370
|
artikel
|
| 27 |
Improvement of the photovoltaic performance of Ag-alloyed Cu2ZnSn(S,Se)4-based solar cells by optimizing the selenization temperature
|
Zhai, Xiaoli
|
|
|
125 |
C |
p. 287-294
|
artikel
|
| 28 |
Influence of various parameters and phenomena on the absorption edge of InAs/GaSb superlattices
|
Machowska-Podsiadlo, E.
|
|
|
125 |
C |
p. 214-219
|
artikel
|
| 29 |
Investigation of intersubband transition optical absorption in Zn1−xMgxO/MgO/ZnO heterostructures
|
Liu, Yan
|
|
|
125 |
C |
p. 26-33
|
artikel
|
| 30 |
Investigation of uniaxial and biaxial strains on the band gap modifications of monolayer MoS2 with tight-binding method
|
Shahriari, Majid
|
|
|
125 |
C |
p. 34-57
|
artikel
|
| 31 |
Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT
|
Mazumdar, Kaushik
|
|
|
125 |
C |
p. 120-124
|
artikel
|
| 32 |
New design of oriented NiS nanoflower arrays as platinum-free counter electrode for high-efficient dye-sensitized solar cells
|
Li, Yan
|
|
|
125 |
C |
p. 66-71
|
artikel
|
| 33 |
Optical filtering devices in SiO2/AlGaAs superlattice structures
|
Shokri, A.A.
|
|
|
125 |
C |
p. 220-232
|
artikel
|
| 34 |
Photocatalytic response of Fe, Co, Ni doped ZnO based diluted magnetic semiconductors for spintronics applications
|
Ghosh, S.S.
|
|
|
125 |
C |
p. 271-280
|
artikel
|
| 35 |
Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
|
Zhou, Wen
|
|
|
125 |
C |
p. 281-286
|
artikel
|
| 36 |
Precursor concentration dependent hydrothermal NiO nanopetals: Tuning morphology for efficient applications
|
Pathak, Devesh K.
|
|
|
125 |
C |
p. 138-143
|
artikel
|
| 37 |
Pt-Ni/rGO counter electrode: electrocatalytic activity for dye-sensitized solar cell
|
Bahrami, Amir
|
|
|
125 |
C |
p. 125-137
|
artikel
|
| 38 |
Raman spectroscopy investigation of inter-diffusion in GaP/Ge(111) heterostructures
|
Aggarwal, R.
|
|
|
125 |
C |
p. 190-197
|
artikel
|
| 39 |
RF noise modeling of Black Phosphorus Junctionless Trench MOSFET in strong inversion region
|
Kumar, Ajay
|
|
|
125 |
C |
p. 72-79
|
artikel
|
| 40 |
Spin transport properties of Fe, Co and Ni doped hydrogenated zigzag silicene nanoribbons: Negative differential resistance and spin filtering effect
|
Akbarzadeh, Mojtaba
|
|
|
125 |
C |
p. 95-102
|
artikel
|
| 41 |
Super junction LDMOS with P-trench and stepped buried oxide layer for high performance
|
Tang, Pan-pan
|
|
|
125 |
C |
p. 198-204
|
artikel
|
| 42 |
The electronic structure and magnetic property of the Mn doped β-Ga2O3
|
Wang, Xiaolong
|
|
|
125 |
C |
p. 330-337
|
artikel
|
| 43 |
The investigation of [Fe/Cr] multilayer by GISAXS
|
Ragulskaya, A.V.
|
|
|
125 |
C |
p. 16-25
|
artikel
|
| 44 |
TM plasmonic modes in a multilayer graphene-dielectric structure
|
Madrigal-Melchor, J.
|
|
|
125 |
C |
p. 247-255
|
artikel
|
| 45 |
Tunable energy band gap of Pb1-xCoxS quantum dots for optoelectronic applications
|
Badawi, Ali
|
|
|
125 |
C |
p. 237-246
|
artikel
|
| 46 |
Tunable optical and electronic properties of Janus monolayers Ga2SSe, Ga2STe, and Ga2SeTe as promising candidates for ultraviolet photodetectors applications
|
Bui, Hoi D.
|
|
|
125 |
C |
p. 1-7
|
artikel
|
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