Digitale Bibliotheek
Sluiten Bladeren door artikelen uit een tijdschrift
 
Zoeken naar met titel:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Tijdschrift beschrijving
       Alle jaargangen van het bijbehorende tijdschrift
         Alle afleveringen van het bijbehorende jaargang
                                       Alle artikelen van de bijbehorende aflevering
 
                             188 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 About some optical properties of Al x Ga1−x N /GaN quantum wells grown by molecular beam epitaxy Leroux, M.
 2004
 4-6 p. 659-674
16 p.
 artikel
2 AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy Joblot, S.
 2006
 4-6 p. 295-299
5 p.
 artikel
3 Al Schottky contact on p-GaSe Huang, Wen-Chang
 2006
 4-6 p. 644-650
7 p.
 artikel
4 Alternative method for quantum feedback control Ting, Julian Juhi-Lian
 2002
 4-6 p. 331-336
6 p.
 artikel
5 Amorphisation of GaN during processing with rare earth ion beams Lorenz, K.
 2004
 4-6 p. 737-745
9 p.
 artikel
6 Analysis of faceting of grain boundaries in GaN Chen, J.
 2004
 4-6 p. 369-375
7 p.
 artikel
7 Anisotropic propagation of surface acoustic waves on nitride layers Pedrós, J.
 2004
 4-6 p. 815-823
9 p.
 artikel
8 Anisotropy of the dielectric function for wurtzite InN Goldhahn, R.
 2004
 4-6 p. 591-597
7 p.
 artikel
9 Annealing study of Sb+ and Al+ ion-implanted ZnO Børseth, T.M.
 2005
 4-6 p. 464-471
8 p.
 artikel
10 An NMR quantum computer of the semiconductor CdTe Shimizu, T
 2002
 4-6 p. 313-316
4 p.
 artikel
11 A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices Ben Salah, Tarek
 2006
 4-6 p. 580-587
8 p.
 artikel
12 Atomically flat GaMnN by diffusion of Mn into GaN( 000 1 ̄ ) Dumont, J.
 2006
 4-6 p. 607-611
5 p.
 artikel
13 Band offset calculations applied to III–V nitride quantum well device engineering Bhouri, A.
 2004
 4-6 p. 799-806
8 p.
 artikel
14 Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes Bluet, J.M.
 2006
 4-6 p. 399-404
6 p.
 artikel
15 Bias sensitive spectral sensitivity in double a -SiC:H pin structures Louro, P.
 2006
 4-6 p. 619-625
7 p.
 artikel
16 Blue cathodoluminescence from thulium implanted Al x Ga1−x N and In x Al1−xN Roqan, I.S.
 2006
 4-6 p. 445-451
7 p.
 artikel
17 Carrier concentration and shallow electron states in In-doped hydrothermally grown ZnO Grossner, Ulrike
 2005
 4-6 p. 364-368
5 p.
 artikel
18 Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence Pauc, N.
 2006
 4-6 p. 557-561
5 p.
 artikel
19 Cathodoluminescence characterization of hydrothermal ZnO crystals Mass, J.
 2005
 4-6 p. 223-230
8 p.
 artikel
20 Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy Colder, A.
 2004
 4-6 p. 713-719
7 p.
 artikel
21 Characterization of thick HVPE GaN films Nouet, Gérard
 2004
 4-6 p. 417-424
8 p.
 artikel
22 Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods Weyher, J.L.
 2006
 4-6 p. 279-288
10 p.
 artikel
23 Characterizations of phosphorus doped ZnO multi-layer thin films to control carrier concentration Lim, Sung Hoon
 2005
 4-6 p. 377-384
8 p.
 artikel
24 Commercial SiC device processing: Status and requirements with respect to SiC based power devices Treu, M.
 2006
 4-6 p. 380-387
8 p.
 artikel
25 Comparison of structural, optical and electrical properties of undoped ZnO thin films grown on r - and c - Al2O3 substrates using pulsed laser deposition Meaney, A.
 2005
 4-6 p. 256-264
9 p.
 artikel
26 Controlled assembly of DNA nanostructures on silanized silicon and mica surfaces for future molecular devices Xiao, Zhanwen
 2002
 4-6 p. 215-220
6 p.
 artikel
27 Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth Halidou, I.
 2006
 4-6 p. 490-495
6 p.
 artikel
28 Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy Lebedev, V.
 2006
 4-6 p. 289-294
6 p.
 artikel
29 Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n -SiC substrates Nishikawa, Atsushi
 2006
 4-6 p. 332-337
6 p.
 artikel
30 Cubic InN on r -plane sapphire Cimalla, V.
 2004
 4-6 p. 487-495
9 p.
 artikel
31 Deep SiC etching with RIE Lazar, M.
 2006
 4-6 p. 388-392
5 p.
 artikel
32 Defect reduction in sublimation grown SiC bulk crystals Schmitt, Erwin
 2006
 4-6 p. 320-327
8 p.
 artikel
33 Defects in electron irradiated ZnO single crystals Hernández-Fenollosa, M.A.
 2005
 4-6 p. 336-343
8 p.
 artikel
34 Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry Pezoldt, J.
 2006
 4-6 p. 612-618
7 p.
 artikel
35 Development of a nuclear spin polarizer with the optical pumping method Goto, Atsushi
 2002
 4-6 p. 303-307
5 p.
 artikel
36 Diamond particles synthesized with graphite spark method in two seconds Hirai, Takayuki
 2006
 4-6 p. 526-529
4 p.
 artikel
37 DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures Mosca, R.
 2004
 4-6 p. 425-433
9 p.
 artikel
38 DLTS study of n-type GaN grown by MOCVD on GaN substrates Tokuda, Y.
 2006
 4-6 p. 268-273
6 p.
 artikel
39 Doping engineering of p-type ZnO Marfaing, Y.
 2005
 4-6 p. 385-396
12 p.
 artikel
40 ECR-assisted MBE growth of In1−x Ga x N heteroepitaxial films on Si Yodo, Tokuo
 2004
 4-6 p. 547-561
15 p.
 artikel
41 Effect of electron screening on the photoluminescence in GaAs/AlGaAs quantum wells Takamasu, T.
 2002
 4-6 p. 283-287
5 p.
 artikel
42 Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths Guillot, F.
 2006
 4-6 p. 306-312
7 p.
 artikel
43 Effects of oxygen-gas flow rate on lattice dynamics and microstructure for Ga-doped ZnO thin films prepared by reactive plasma deposition Yamamoto, T.
 2005
 4-6 p. 369-376
8 p.
 artikel
44 Effects of surface conduction on Hall-effect measurements in ZnO Look, D.C.
 2005
 4-6 p. 406-412
7 p.
 artikel
45 Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy Alvarez, J.
 2006
 4-6 p. 343-349
7 p.
 artikel
46 Electrical properties of ZnO thin films and optical properties of ZnO-based nanostructures Grundmann, M.
 2005
 4-6 p. 317-328
12 p.
 artikel
47 Electronic properties of deep defects in n-type GaN Muret, P.
 2004
 4-6 p. 435-443
9 p.
 artikel
48 Energetics of dopant atoms in subsurface positions of diamond semiconductor Miyazaki, Takehide
 2006
 4-6 p. 574-579
6 p.
 artikel
49 Energetics of the 30∘ Shockley partial dislocation in wurtzite GaN Belabbas, I.
 2006
 4-6 p. 458-463
6 p.
 artikel
50 Energy and momentum relaxation of electrons in bulk and 2D GaN Zanato, D.
 2004
 4-6 p. 455-463
9 p.
 artikel
51 Epitaxial growth of 4H–SiC{0001} and reduction of deep levels Kimoto, T.
 2006
 4-6 p. 225-232
8 p.
 artikel
52 Epitaxial growth of ZnSiN2 single-crystalline films on sapphire substrates Cloitre, T.
 2004
 4-6 p. 377-383
7 p.
 artikel
53 EPR study on magnetic Zn1−x Mn x O Diaconu, Mariana
 2005
 4-6 p. 413-420
8 p.
 artikel
54 Evolution of high-dose implanted hydrogen in ZnO Monakhov, E.V.
 2005
 4-6 p. 472-478
7 p.
 artikel
55 Excitonic Rabi oscillations in a quantum dot: local field impact Slepyan, G.Ya.
 2004
 4-6 p. 773-781
9 p.
 artikel
56 Extended X-ray absorption fine structure studies of thulium doped GaN epilayers Katchkanov, V.
 2004
 4-6 p. 729-736
8 p.
 artikel
57 Femtosecond time-resolved interferences of resonantly excited excitons in bulk GaN Aoudé, O.
 2004
 4-6 p. 607-614
8 p.
 artikel
58 Formation and decay of charge carriers in hybrid MDMO-PPV:ZnO bulk heterojunctions produced from a ZnO precursor Quist, Pieter A.C.
 2005
 4-6 p. 308-316
9 p.
 artikel
59 Free-to-bound radiative recombination in highly conducting InN epitaxial layers Arnaudov, B.
 2004
 4-6 p. 563-571
9 p.
 artikel
60 GaN/AlN quantum dot photodetectors at 1.3–1.5  μm Doyennette, L.
 2006
 4-6 p. 262-267
6 p.
 artikel
61 GaN-based surface acoustic wave filters for wireless communications Petroni, S.
 2004
 4-6 p. 825-831
7 p.
 artikel
62 GaN micromachined FBAR structures for microwave applications Müller, A.
 2006
 4-6 p. 426-431
6 p.
 artikel
63 Growth and characterisation of Eu doped GaN thin films Halambalakis, G.
 2004
 4-6 p. 721-728
8 p.
 artikel
64 Growth and characterisation of GaN with reduced dislocation density Datta, R.
 2004
 4-6 p. 393-401
9 p.
 artikel
65 Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- K application Fissel, A.
 2006
 4-6 p. 551-556
6 p.
 artikel
66 Growth and characterization of ZnMnO thin films Savchuk, A.I.
 2005
 4-6 p. 421-427
7 p.
 artikel
67 Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC Cordier, Y.
 2006
 4-6 p. 359-362
4 p.
 artikel
68 Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor Hemmingsson, C.
 2006
 4-6 p. 205-213
9 p.
 artikel
69 Growth of InN layers by MOVPE using different substrates Maleyre, B.
 2004
 4-6 p. 517-526
10 p.
 artikel
70 Growth of isotopically enriched 28Si nanowires Hu, Quanli
 2002
 4-6 p. 255-259
5 p.
 artikel
71 High efficiency n-ZnO/p-SiC heterostructure photodiodes grown by plasma-assisted molecular-beam epitaxy Alivov, Ya.I.
 2005
 4-6 p. 439-445
7 p.
 artikel
72 High mobility holes on hydrogen-terminated diamond surface Shinagawa, H.
 2002
 4-6 p. 289-294
6 p.
 artikel
73 High mobility ZnO thin film deposition on SrTiO3 and transparent field effect transistor fabrication Bellingeri, E.
 2005
 4-6 p. 446-454
9 p.
 artikel
74 High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy Hiroki, M.
 2006
 4-6 p. 214-218
5 p.
 artikel
75 High-quality ZnO layers grown by MBE on sapphire El-Shaer, A.
 2005
 4-6 p. 265-271
7 p.
 artikel
76 High-temperature failure of GaN LEDs related with passivation Meneghini, Matteo
 2006
 4-6 p. 405-411
7 p.
 artikel
77 Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering Mokeddem, K.
 2006
 4-6 p. 598-602
5 p.
 artikel
78 Hydrogen-free CVD diamond synthesis Hiraga, Shinji
 2006
 4-6 p. 519-525
7 p.
 artikel
79 Improvement of cubic silicon carbide crystals grown from solution Eid, J.
 2006
 4-6 p. 201-204
4 p.
 artikel
80 Index to Volume 31/Index to Volume 32 2002
 4-6 p. 347-358
12 p.
 artikel
81 Index to Volume 35/Index to Volume 36 2004
 4-6 p. 877-909
33 p.
 artikel
82 Influence of pulsed laser deposition (PLD) parameters on the H2 sensing properties of zinc oxide thin films Brilis, N.
 2005
 4-6 p. 283-290
8 p.
 artikel
83 Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties Darakchieva, V.
 2004
 4-6 p. 573-580
8 p.
 artikel
84 In-plane photovoltage measurements on MBE grown InN Tiras, E.
 2004
 4-6 p. 473-485
13 p.
 artikel
85 Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion method Arokiaraj, J.
 2006
 4-6 p. 219-224
6 p.
 artikel
86 Issues in ZnO homoepitaxy Cho, M.W.
 2005
 4-6 p. 349-363
15 p.
 artikel
87 Josephson-junction qubits: entanglement and coherence Anderson, J.R.
 2002
 4-6 p. 231-238
8 p.
 artikel
88 Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective Müller, St.G.
 2006
 4-6 p. 195-200
6 p.
 artikel
89 Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVD Maleyre, B.
 2004
 4-6 p. 527-535
9 p.
 artikel
90 Lithium and sodium acceptors in ZnO Meyer, B.K.
 2005
 4-6 p. 344-348
5 p.
 artikel
91 Local control of nuclear-spin system in a quantum-Hall device Machida, Tomoki
 2002
 4-6 p. 275-282
8 p.
 artikel
92 Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen Sartel, C.
 2006
 4-6 p. 476-482
7 p.
 artikel
93 Manipulation and measurement of nuclear spin over the quantum Hall regime for quantum information processing Mani, R.G.
 2002
 4-6 p. 261-273
13 p.
 artikel
94 MBE growth of nitride-based photovoltaic intersubband detectors Monroy, E.
 2006
 4-6 p. 418-425
8 p.
 artikel
95 Mechanical and physicochemical properties of AlN thin films obtained by pulsed laser deposition Cibert, C.
 2004
 4-6 p. 409-416
8 p.
 artikel
96 Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillars Taliercio, T.
 2004
 4-6 p. 783-790
8 p.
 artikel
97 Microstructural analysis of GaN films grown by a two-step technique on patterned GaN and sapphire Cho, Hyung Koun
 2004
 4-6 p. 385-391
7 p.
 artikel
98 Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE Komninou, Ph.
 2004
 4-6 p. 509-515
7 p.
 artikel
99 Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111) Roccaforte, F.
 2006
 4-6 p. 373-379
7 p.
 artikel
100 Mn-doped GaN/AlN heterojunction for spintronic devices Debernardi, Alberto
 2006
 4-6 p. 530-532
3 p.
 artikel
101 MOCVD of pure and Ga-doped epitaxial ZnO Kaul, A.R.
 2005
 4-6 p. 272-282
11 p.
 artikel
102 Modeling of trap-assisted tunneling in AlGaN/GaN heterostructure field effect transistors with different Al mole fractions Asgari, A.
 2006
 4-6 p. 603-606
4 p.
 artikel
103 Modelling of bandgap and band offset properties in III-N related heterostructures Akıncı, Özden
 2004
 4-6 p. 685-692
8 p.
 artikel
104 Morphological properties of AlN and GaN grown by MOVPE on porous Si(111) and Si(111) substrates Chaaben, N.
 2006
 4-6 p. 483-489
7 p.
 artikel
105 MOVPE growth study of B x Ga(1−x)N on GaN template substrate Gautier, S.
 2006
 4-6 p. 233-238
6 p.
 artikel
106 5  μm thick 3C-SiC layers grown on Ge-modified Si(100) substrates Zgheib, Ch.
 2006
 4-6 p. 638-643
6 p.
 artikel
107 Multiexciton transients in a single quantum dot Kuroda, T.
 2002
 4-6 p. 239-247
9 p.
 artikel
108 Multipulse control of decoherence—nonlinear spin-boson model Uchiyama, Chikako
 2002
 4-6 p. 295-301
7 p.
 artikel
109 Mutual quenching of Er3+ photoluminescence under two laser excitation in GaN:Er Wojdak, M.
 2004
 4-6 p. 755-761
7 p.
 artikel
110 Nanostructure fabrication for future nanodevices using a scanning tunneling microscope Onishi, K.
 2002
 4-6 p. 249-253
5 p.
 artikel
111 New developments for nitride unipolar devices at 1.3–1.5  μm wavelengths Nevou, L.
 2006
 4-6 p. 412-417
6 p.
 artikel
112 New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure Ha, Min-Woo
 2006
 4-6 p. 567-573
7 p.
 artikel
113 New nanocrystalline colored oxynitride thin films from Ti4+ -functionalized ZnO nanocolloids Grasset, F.
 2005
 4-6 p. 300-307
8 p.
 artikel
114 New results on diffusion lengths measurements in wide bandgap semiconductors, obtained from steady state photocarrier gratings (SSPG) Niehus, M.
 2006
 4-6 p. 350-358
9 p.
 artikel
115 Ni–Al ohmic contact to p-type 4H-SiC Vang, H.
 2006
 4-6 p. 626-631
6 p.
 artikel
116 Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT Ha, Min-Woo
 2006
 4-6 p. 562-566
5 p.
 artikel
117 Nitride-based photodetectors: from visible to X-ray monitoring Pau, J.L.
 2004
 4-6 p. 807-814
8 p.
 artikel
118 Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers Yu, C.L.
 2006
 4-6 p. 470-475
6 p.
 artikel
119 NMR study of YP and YPO4 as 2-qubits quantum computers Kitazawa, H.
 2002
 4-6 p. 317-322
6 p.
 artikel
120 [No title] Freitas, Jaime
 2006
 4-6 p. 191-194
4 p.
 artikel
121 On the determination of the statistical characteristics of the magnesium acceptor in GaN Šantić, B.
 2004
 4-6 p. 445-453
9 p.
 artikel
122 Optical and structural properties of rare earth doped GaN quantum dots Andreev, T.
 2004
 4-6 p. 707-712
6 p.
 artikel
123 Optical and structural studies in Eu-implanted AlN films Peres, M.
 2006
 4-6 p. 537-544
8 p.
 artikel
124 Optical properties of GaN nanocrystals embedded into silica matrices Podhorodecki, A.
 2006
 4-6 p. 533-536
4 p.
 artikel
125 Optical properties of InGaN quantum dots Dworzak, M.
 2004
 4-6 p. 763-772
10 p.
 artikel
126 Optical properties of nonpolar a -plane GaN layers Paskov, P.P.
 2006
 4-6 p. 253-261
9 p.
 artikel
127 Optical properties of ZnO-based quantum structures Makino, Takayuki
 2005
 4-6 p. 231-244
14 p.
 artikel
128 Optical studies on a coherent InGaN/GaN layer Correia, M.R.
 2006
 4-6 p. 452-457
6 p.
 artikel
129 Optical studies on the red luminescence of InGaN epilayers Correia, M.R.
 2004
 4-6 p. 625-632
8 p.
 artikel
130 Optimization of two-dimensional electron gases and I – V characteristics for AlGaN/GaN HEMT devices Wang, Yan
 2004
 4-6 p. 869-875
7 p.
 artikel
131 Persistent spectral hole-burning: ideal memory for quantum computers? Sakoda, Kazuaki
 2002
 4-6 p. 337-342
6 p.
 artikel
132 Photoluminescence and excitation spectroscopy of the 1.5  μm Er-related band in MBE-grown GaN layers Izeddin, I.
 2004
 4-6 p. 701-705
5 p.
 artikel
133 Photoluminescence, cathodoluminescence, and reflectance study of AlN layers and AlN single crystals Prinz, G.M.
 2006
 4-6 p. 513-518
6 p.
 artikel
134 Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas Kudrawiec, R.
 2004
 4-6 p. 633-641
9 p.
 artikel
135 Photoreflectance study of p-type GaN layers Kudrawiec, R.
 2004
 4-6 p. 643-649
7 p.
 artikel
136 Plasma-assisted molecular beam epitaxy of wurtzite GaMnN displaying ferromagnetism assessed by means of X-ray magnetic circular dichroism Sarigiannidou, E.
 2006
 4-6 p. 239-245
7 p.
 artikel
137 PL studies on ZnO single crystals implanted with thulium ions Peres, M.
 2004
 4-6 p. 747-753
7 p.
 artikel
138 Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells Armani, N.
 2004
 4-6 p. 615-624
10 p.
 artikel
139 Possible 6-qubit NMR quantum computer device material; simulator of the NMR line width Hashi, K.
 2002
 4-6 p. 309-312
4 p.
 artikel
140 Potentialities of GaN-based microcavities in strong coupling regime at room temperature Antoine-Vincent, N.
 2004
 4-6 p. 599-606
8 p.
 artikel
141 Properties of Li-, P- and N-doped ZnO thin films prepared by pulsed laser deposition Duclère, J.-R.
 2005
 4-6 p. 397-405
9 p.
 artikel
142 Properties of Schottky barrier photodiodes based on InGaN/GaN MQW structures Rivera, C.
 2004
 4-6 p. 849-857
9 p.
 artikel
143 Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN Iliopoulos, E.
 2006
 4-6 p. 313-319
7 p.
 artikel
144 Quantum computation with ions in microscopic traps Šašura, Marek
 2002
 4-6 p. 195-213
19 p.
 artikel
145 Quantum information processing in optical images Fabre, C.
 2002
 4-6 p. 323-329
7 p.
 artikel
146 Quantum information processing with atoms and cavities Raimond, J.M.
 2002
 4-6 p. 187-193
7 p.
 artikel
147 Quantum simulation of the t–J model Yamaguchi, Fumiko
 2002
 4-6 p. 343-345
3 p.
 artikel
148 Radiation source dependence of device performance degradation for 4H-SiC MESFETs Ohyama, H.
 2006
 4-6 p. 632-637
6 p.
 artikel
149 Raman scattering in InN films and nanostructures Pinquier, C.
 2004
 4-6 p. 581-589
9 p.
 artikel
150 Raman scattering study of ZnO:Ti and ZnO:Mn bulk crystals Gebicki, W.
 2005
 4-6 p. 428-438
11 p.
 artikel
151 Rashba effect in an asymmetric quantum dot in a magnetic field Bandyopadhyay, S.
 2002
 4-6 p. 171-177
7 p.
 artikel
152 Reactivity of ZnO: Impact of polarity and nanostructure Losurdo, M.
 2005
 4-6 p. 291-299
9 p.
 artikel
153 Readout of the qubit state with a dc-SQUID Takayanagi, Hideaki
 2002
 4-6 p. 221-229
9 p.
 artikel
154 Reexamination of macroscopic quantum tunnelling observed in ferritin: magnetic field dependence of magnetic relaxation Mamiya, H.
 2002
 4-6 p. 179-186
8 p.
 artikel
155 Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2 /Si and SiO2 /SiC interfaces Tallarida, Massimo
 2006
 4-6 p. 393-398
6 p.
 artikel
156 Room-temperature ferromagnetism in (Ga, Mn)N thin films grown by pulsed laser deposition O’Mahony, D.
 2004
 4-6 p. 403-408
6 p.
 artikel
157 Self-consistent calculations of exciton, biexciton and charged exciton energies in InGaN/GaN quantum dots Williams, D.P.
 2004
 4-6 p. 791-798
8 p.
 artikel
158 Self-organized domain formation in low-dislocation-density GaN Riemann, T.
 2004
 4-6 p. 833-847
15 p.
 artikel
159 Semiempirical tight-binding modelling of III-N-based heterostructures Gürel, H. Hakan
 2006
 4-6 p. 588-597
10 p.
 artikel
160 Special issue on Advanced materials for quantum computing Kido, Giyuu
 2002
 4-6 p. 155-
1 p.
 artikel
161 Spin dynamics of neutral and charged excitons in InAs/GaAs quantum dots: towards Q-bit implementation? Amand, T.
 2002
 4-6 p. 157-170
14 p.
 artikel
162 Spontaneous emission enhancement in micropatterned GaN Niehus, M.
 2004
 4-6 p. 675-683
9 p.
 artikel
163 Stillinger–Weber parameters for In and N atoms Lei, H.P.
 2006
 4-6 p. 464-469
6 p.
 artikel
164 Structural and electronic properties of ZnMgO/ZnO quantum wells Morhain, C.
 2005
 4-6 p. 455-463
9 p.
 artikel
165 Structural and optical characterisation of InN layers grown by MOCVD Singh, P.
 2004
 4-6 p. 537-545
9 p.
 artikel
166 Structural properties of 10  μm thick InN grown on sapphire (0001) Dimakis, E.
 2006
 4-6 p. 246-252
7 p.
 artikel
167 Study of the structural and optical properties of GaN/AlN quantum dot superlattices Skoulidis, N.
 2006
 4-6 p. 432-439
8 p.
 artikel
168 Superlattices and Microstructures Index, Volumes 37/38 2005
 4-6 p. 479-490
12 p.
 artikel
169 Surface confinement of the InN-rich phase in thick InGaN on GaN Kim, Taek-Seung
 2006
 4-6 p. 545-550
6 p.
 artikel
170 Technology aspects of GaN-based diodes for high-field operation Mutamba, Kabula
 2006
 4-6 p. 363-368
6 p.
 artikel
171 Temperature dependence of the built-in electric field strength of AlGaN/GaN heterostructures on Si(111) substrate Winzer, A.T.
 2004
 4-6 p. 693-700
8 p.
 artikel
172 The effect of time reversal symmetry on vibrational modes in ZnO and related compounds: GaN, CdS, BeO, ZnS, CdSe Kunert, H.W.
 2005
 4-6 p. 329-335
7 p.
 artikel
173 The influence of doping element on structural and luminescent characteristics of ZnS thin films Kryshtab, T.
 2006
 4-6 p. 651-656
6 p.
 artikel
174 Theoretical assessment of electronic transport in InN Bulutay, C.
 2004
 4-6 p. 465-471
7 p.
 artikel
175 Thermal conductivity, dislocation density and GaN device design Mion, C.
 2006
 4-6 p. 338-342
5 p.
 artikel
176 Thermodynamic analysis of Si doping in GaN Halidou, I.
 2006
 4-6 p. 496-500
5 p.
 artikel
177 The role of a ZnO buffer layer in the growth of ZnO thin film on Al2O3 substrate Kang, Hong Seong
 2006
 4-6 p. 501-506
6 p.
 artikel
178 The role of Mg complexes in the degradation of InGaN-based LEDs Rossi, F.
 2004
 4-6 p. 859-868
10 p.
 artikel
179 The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy Dimakis, E.
 2004
 4-6 p. 497-507
11 p.
 artikel
180 The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer Gloux, F.
 2006
 4-6 p. 300-305
6 p.
 artikel
181 Three phonon processes in GaN Kunert, H.W.
 2004
 4-6 p. 651-658
8 p.
 artikel
182 Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers Tamulaitis, G.
 2006
 4-6 p. 274-278
5 p.
 artikel
183 Titanium related luminescence in SiC Henry, A.
 2006
 4-6 p. 328-331
4 p.
 artikel
184 UV-Raman scattering study of lattice recovery by thermal annealing of Eu+ -implanted GaN layers Pastor, D.
 2006
 4-6 p. 440-444
5 p.
 artikel
185 Vertical electron transport study in GaN/AlN/GaN heterostructures Leconte, S.
 2006
 4-6 p. 507-512
6 p.
 artikel
186 Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AlInN on an N-face GaN surface Rizzi, F.
 2006
 4-6 p. 369-372
4 p.
 artikel
187 ZnO MOVPE growth: From local impurity incorporation towards p-type doping Dadgar, A.
 2005
 4-6 p. 245-255
11 p.
 artikel
188 ZnO rediscovered — once again!? Klingshirn, C.
 2005
 4-6 p. 209-222
14 p.
 artikel
                             188 gevonden resultaten
 
 Koninklijke Bibliotheek - Nationale Bibliotheek van Nederland