nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
AFM and TEM study of hydrogenated sputtered Si/Ge multilayers
|
Frigeri, C. |
|
2009 |
|
4-5 |
p. 475-481 7 p. |
artikel |
2 |
An effective potential approach for extended density of states in heterostructures
|
Colak, S. |
|
1988 |
|
4-5 |
p. 571-576 6 p. |
artikel |
3 |
Angle-dependent laser diffraction in inverse opal photonic crystals
|
Sinitskii, Alexander |
|
2008 |
|
4-5 |
p. 626-632 7 p. |
artikel |
4 |
Assembling of nanoparticle arrays using microelectromagnetic matrix
|
Chitu, L. |
|
2008 |
|
4-5 |
p. 528-532 5 p. |
artikel |
5 |
Atomic diffusion on nanostructured surfaces
|
Bulou, Hervé |
|
2008 |
|
4-5 |
p. 533-541 9 p. |
artikel |
6 |
Atomic force acoustic microscopy characterization of nanostructured selenium–tin thin films
|
Passeri, D. |
|
2008 |
|
4-5 |
p. 641-649 9 p. |
artikel |
7 |
Atomic Force Microscope nanolithography on titanium: Influence of the anodic voltage waveform on the formation of oxide nanodots
|
Kim, Tae Young |
|
2008 |
|
4-5 |
p. 670-676 7 p. |
artikel |
8 |
A tunneling measurement of the electronic density of states of a superlattice
|
England, P. |
|
1988 |
|
4-5 |
p. 409-411 3 p. |
artikel |
9 |
Auger recombination in GaSb AlSb multi quantum well heterostructures
|
Zielinski, E. |
|
1988 |
|
4-5 |
p. 473-478 6 p. |
artikel |
10 |
BIAMS 08 COMMITTEES
|
|
|
2009 |
|
4-5 |
p. 144- 1 p. |
artikel |
11 |
Calculation of transition temperatures of superconductor-metal sandwiches and superlattices
|
Auvil, P.R. |
|
1988 |
|
4-5 |
p. 431-433 3 p. |
artikel |
12 |
Capacitance Transient X-ray Absorption Spectroscopy of semiconducting structures
|
Bazlov, N. |
|
2009 |
|
4-5 |
p. 190-199 10 p. |
artikel |
13 |
Cathodoluminescence mapping and spectroscopy of Te-doped In x Ga 1 − x Sb grown by the vertical Bridgman method under an alternating magnetic field
|
Díaz-Guerra, C. |
|
2009 |
|
4-5 |
p. 407-412 6 p. |
artikel |
14 |
Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires
|
Nogales, E. |
|
2009 |
|
4-5 |
p. 156-160 5 p. |
artikel |
15 |
Characterization of anodic aluminium oxide pores fabricated on aluminium templates
|
Su, Shui-Hsiang |
|
2008 |
|
4-5 |
p. 514-519 6 p. |
artikel |
16 |
Characterization of structural and magnetic order of Er/Y superlattices
|
Borchers, J. |
|
1988 |
|
4-5 |
p. 439-442 4 p. |
artikel |
17 |
CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres
|
González, A. |
|
2009 |
|
4-5 |
p. 421-428 8 p. |
artikel |
18 |
Combined MEIS/TEM study of structural defects in Si implanted with a high dose of 100 keV Si ions
|
Sobolev, N.A. |
|
2009 |
|
4-5 |
p. 177-181 5 p. |
artikel |
19 |
Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes
|
Fabbri, F. |
|
2009 |
|
4-5 |
p. 383-387 5 p. |
artikel |
20 |
Complementary application of Raman scattering and GISAXS in characterization of embedded semiconductor QDs
|
Desnica-Frankovic, I.D. |
|
2008 |
|
4-5 |
p. 385-394 10 p. |
artikel |
21 |
Compositional analysis and evolution of defects formed on GaInP epilayers grown on Germanium
|
Galiana, Beatriz |
|
2009 |
|
4-5 |
p. 277-284 8 p. |
artikel |
22 |
Copper-containing nanoporous films
|
Lakiss, L. |
|
2008 |
|
4-5 |
p. 617-625 9 p. |
artikel |
23 |
Correlating composition and luminescence in AlInGaN epilayers
|
Edwards, P.R. |
|
2009 |
|
4-5 |
p. 151-155 5 p. |
artikel |
24 |
Defect induced non-ideal dark I – V characteristics of solar cells
|
Breitenstein, O. |
|
2009 |
|
4-5 |
p. 182-189 8 p. |
artikel |
25 |
Density of electronic states in gold nanoclusters pulsed laser deposited on HOPG
|
Troyan, V. |
|
2008 |
|
4-5 |
p. 650-656 7 p. |
artikel |
26 |
Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current
|
Sayad, Y. |
|
2009 |
|
4-5 |
p. 393-401 9 p. |
artikel |
27 |
Determination of the valence band offset at a HgTe/CdTe heterojunction by magnetooptics
|
Yang, Z. |
|
1988 |
|
4-5 |
p. 559-563 5 p. |
artikel |
28 |
Domain instability in semiconductor superlattices
|
Gružinskis, V. |
|
1988 |
|
4-5 |
p. 627-628 2 p. |
artikel |
29 |
Driving the self assembly of gold nanoparticle structures using highly oriented PTFE templates
|
George, Chandramohan |
|
2008 |
|
4-5 |
p. 599-607 9 p. |
artikel |
30 |
EBIC and CL studies of ELOG GaN films
|
Yakimov, E.B. |
|
2009 |
|
4-5 |
p. 308-313 6 p. |
artikel |
31 |
EBIC/PL investigations of dislocation network produced by silicon wafer direct bonding
|
Jia, G. |
|
2009 |
|
4-5 |
p. 314-320 7 p. |
artikel |
32 |
Effect of electron irradiation on defect structure of 6H–SiC grown by PVT method
|
Kozubal, M. |
|
2009 |
|
4-5 |
p. 402-406 5 p. |
artikel |
33 |
Effect of particle size on magnetic properties of LaMnO 3 + δ nanoparticles
|
Markovich, V. |
|
2008 |
|
4-5 |
p. 476-482 7 p. |
artikel |
34 |
Effects of Ga doping on optical and structural properties of ZnO epilayers
|
Buyanova, I.A. |
|
2009 |
|
4-5 |
p. 413-420 8 p. |
artikel |
35 |
Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films
|
Chen, Bin |
|
2009 |
|
4-5 |
p. 295-300 6 p. |
artikel |
36 |
Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM
|
Herrera, M. |
|
2009 |
|
4-5 |
p. 435-443 9 p. |
artikel |
37 |
Electronic properties of pseudomorphic InGaAs AlGaAs (on GaAs) and InGaAs InAlAs (on InP) Modfet structures
|
Jaffe, Mark |
|
1988 |
|
4-5 |
p. 395-404 10 p. |
artikel |
38 |
Electronic states of semiconductor/metal/semiconductor quantum well structures
|
Huberman, M.L. |
|
1988 |
|
4-5 |
p. 555-558 4 p. |
artikel |
39 |
Electronic structure of quantum-well states revealed under high pressures
|
Wolford, D.J. |
|
1988 |
|
4-5 |
p. 525-535 11 p. |
artikel |
40 |
Electronic structure of strained layer Si GexSi1−x superlattices from tight binding theory
|
Rücker, H. |
|
1988 |
|
4-5 |
p. 511-513 3 p. |
artikel |
41 |
Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon
|
Torchynska, T.V. |
|
2009 |
|
4-5 |
p. 267-270 4 p. |
artikel |
42 |
Energy levels and magneto-electric subbands in some quasi uni-dimensional semiconductor heterostructures
|
Brum, J.A. |
|
1988 |
|
4-5 |
p. 443-448 6 p. |
artikel |
43 |
Enhanced and quenched Raman scattering by interface phonons in semiconductor superlattices: What are the defects?
|
Gammon, D. |
|
1988 |
|
4-5 |
p. 405-407 3 p. |
artikel |
44 |
Epitaxial growth of PbTe on (111)BaF2 and (100)GaAs
|
Clemens, H. |
|
1988 |
|
4-5 |
p. 591-596 6 p. |
artikel |
45 |
Errata
|
|
|
1988 |
|
4-5 |
p. i- 1 p. |
artikel |
46 |
Evaluation of diffusion-recombination parameters in electrodeposited CuIn(S, Se)2 solar cells by means of electron beam induced current experiments and modelling
|
Sieber, B. |
|
2009 |
|
4-5 |
p. 161-167 7 p. |
artikel |
47 |
Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions
|
Frigeri, C. |
|
2009 |
|
4-5 |
p. 451-457 7 p. |
artikel |
48 |
EXAFS studies of the microstructure of semiconductor alloys, defects, and metal-semiconductor interfaces
|
Bunker, Bruce A. |
|
1988 |
|
4-5 |
p. 489-492 4 p. |
artikel |
49 |
Exciton capture and thermal escape in InAs dot-in-a-well laser structures
|
Torchynska, T.V. |
|
2009 |
|
4-5 |
p. 349-355 7 p. |
artikel |
50 |
Exciton related photoluminescence stimulation in SiC nanocrystals
|
Torchynska, T. |
|
2009 |
|
4-5 |
p. 222-227 6 p. |
artikel |
51 |
Excitons and polaritons in semiconductor/insulator quantum wells and superlattices
|
Keldysh, L.V. |
|
1988 |
|
4-5 |
p. 637-642 6 p. |
artikel |
52 |
Extended and local plasmons in a lateral superlattice
|
Heitmann, D. |
|
1988 |
|
4-5 |
p. 503-506 4 p. |
artikel |
53 |
Field spectrum anisotropy in multiple quantum-well semiconductor lasers subjected to high magnetic fields
|
Vahala, Kerry |
|
1988 |
|
4-5 |
p. 507-510 4 p. |
artikel |
54 |
Focused ion beam directed self-assembly (Cu2O on SrTiO3 ): FIB pit and Cu2O nanodot evolution
|
Groves, J.F. |
|
2008 |
|
4-5 |
p. 677-685 9 p. |
artikel |
55 |
Formation of composite nanostructures by corrosive deposition of copper into porous silicon
|
Bandarenka, H. |
|
2008 |
|
4-5 |
p. 583-587 5 p. |
artikel |
56 |
Formation of Ge nanocrystals and evolution of the oxide matrix in as-deposited and annealed LPCVD SiGeO films
|
Rodríguez, A. |
|
2009 |
|
4-5 |
p. 343-348 6 p. |
artikel |
57 |
Formation of Ge-nanocrystals in SiO2 matrix by magnetron sputtering and post-deposition thermal treatment
|
Desnica, U.V. |
|
2008 |
|
4-5 |
p. 323-330 8 p. |
artikel |
58 |
Free carrier scattering from quasi-2D optical phonons in semiconductor quantum wells and superlattices
|
Wendler, L. |
|
1988 |
|
4-5 |
p. 577-580 4 p. |
artikel |
59 |
GaAs quantum well structures investigation by local cathodoluminescence
|
Shakhmin, A.A. |
|
2009 |
|
4-5 |
p. 376-382 7 p. |
artikel |
60 |
Gold nanoparticles self-assembled onto passivated glass substrates: Tuning the transition from 2D to 1D structures
|
George, Chandramohan |
|
2008 |
|
4-5 |
p. 608-616 9 p. |
artikel |
61 |
Growth mechanisms of self-assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets
|
Uccelli, E. |
|
2008 |
|
4-5 |
p. 425-430 6 p. |
artikel |
62 |
Growth of arrays of silicon nanowires with centrosymmetric distribution over silicon substrate
|
Hourlier, D. |
|
2008 |
|
4-5 |
p. 362-373 12 p. |
artikel |
63 |
High efficiency protein separation with organosilane assembled silica coated magnetic nanoparticles
|
Chang, Jeong Ho |
|
2008 |
|
4-5 |
p. 442-448 7 p. |
artikel |
64 |
Hole subbands in one-dimensional quantum well wires
|
Sweeny, Mark |
|
1988 |
|
4-5 |
p. 623-626 4 p. |
artikel |
65 |
Hot electron transistors grown by MOCVD
|
Kawai, H. |
|
1988 |
|
4-5 |
p. 545-549 5 p. |
artikel |
66 |
Hydrogen desorption effect on cathodoluminescence of ZnO
|
Dierre, B. |
|
2009 |
|
4-5 |
p. 321-325 5 p. |
artikel |
67 |
InAs/AlGaAs QDs for intersubband devices
|
Schramboeck, M. |
|
2008 |
|
4-5 |
p. 411-415 5 p. |
artikel |
68 |
Infrared photoluminescence and Raman spectra in the Y2O3–ZrO2 system
|
Torres, D.I. |
|
2009 |
|
4-5 |
p. 482-488 7 p. |
artikel |
69 |
Injection of charge nanostructures into insulators
|
Fitting, H.-J. |
|
2009 |
|
4-5 |
p. 200-205 6 p. |
artikel |
70 |
In-situ study of the interface formation in organic multilayers
|
Sassella, A. |
|
2008 |
|
4-5 |
p. 550-555 6 p. |
artikel |
71 |
Ion damage during preparation of nanostructures in magnetite by means of focused ion-beam (FIB) milling
|
Koblischka-Veneva, A. |
|
2008 |
|
4-5 |
p. 468-475 8 p. |
artikel |
72 |
Ion implantation and cluster formation in silica
|
Salh, Roushdey |
|
2009 |
|
4-5 |
p. 362-368 7 p. |
artikel |
73 |
Ion-implantation damage and annealing effects in (InGa)As GaAs strained-layer semiconductor systems
|
Myers, D.R. |
|
1988 |
|
4-5 |
p. 585-589 5 p. |
artikel |
74 |
Langmuir–Blodgett Ag nanoparticle monolayer patterned by pulsed laser-induced selective desorption
|
Shin, Hyunkwon |
|
2008 |
|
4-5 |
p. 657-663 7 p. |
artikel |
75 |
Local anodic oxidation on dodecyl terminated silicon(100)
|
Graaf, Harald |
|
2008 |
|
4-5 |
p. 402-410 9 p. |
artikel |
76 |
Low temperature characterization of AlSi diffusion kinetics
|
Patrick Dugan, M. |
|
1988 |
|
4-5 |
p. 565-570 6 p. |
artikel |
77 |
Macroscopic description of magnetic behaviors induced by spin transfer in magnetic multilayer nanostructures
|
Ren, Min |
|
2008 |
|
4-5 |
p. 431-435 5 p. |
artikel |
78 |
Magnetic nanocomposites fabricated by selective metal deposition in and on self-assembled mesoporous silicon
|
Granitzer, P. |
|
2008 |
|
4-5 |
p. 436-441 6 p. |
artikel |
79 |
Magnetic properties of Fe Mn superlattices
|
Motomura, Yoshihiro |
|
1988 |
|
4-5 |
p. 479-483 5 p. |
artikel |
80 |
Magnetoresistance of Fe–SrF2 single-electron devices with a current-in-plane geometry
|
Arita, M. |
|
2008 |
|
4-5 |
p. 449-456 8 p. |
artikel |
81 |
Many-electron edge singularity at the Fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells
|
Nash, K.J. |
|
1988 |
|
4-5 |
p. 553-554 2 p. |
artikel |
82 |
Mapping strains at the nanoscale using electron back scatter diffraction
|
Wilkinson, Angus J. |
|
2009 |
|
4-5 |
p. 285-294 10 p. |
artikel |
83 |
Mechanical strength of porous silicon and its possible applications
|
Klyshko, A. |
|
2008 |
|
4-5 |
p. 374-377 4 p. |
artikel |
84 |
Mesoporous layers of TiO2 as highly efficient photocatalysts for the purification of air
|
Kalousek, Vít |
|
2008 |
|
4-5 |
p. 506-513 8 p. |
artikel |
85 |
Micro-scale modification of diamond-like carbon and copper electroplating by scanning probe field emission current method
|
Hayashi, Shigehiro |
|
2009 |
|
4-5 |
p. 326-331 6 p. |
artikel |
86 |
Microstructure of Au nanoclusters formed in and on SiO2
|
Ruffino, F. |
|
2008 |
|
4-5 |
p. 588-598 11 p. |
artikel |
87 |
Mn doping of germanium nanowires by vapour–liquid–solid deposition
|
Grossi, V. |
|
2008 |
|
4-5 |
p. 489-495 7 p. |
artikel |
88 |
Molecular dynamic studies of chemical reactions at semiconductor surfaces
|
Menon, Madhu |
|
1988 |
|
4-5 |
p. 629-631 3 p. |
artikel |
89 |
Monte Carlo simulation of low energy electron injection and scattering in insulating layers
|
Fitting, H.-J. |
|
2009 |
|
4-5 |
p. 356-361 6 p. |
artikel |
90 |
Monte Carlo simulation of the EBIC collection efficiency of a Schottky nanocontact
|
Ledra, M. |
|
2009 |
|
4-5 |
p. 444-450 7 p. |
artikel |
91 |
Nano-patterning with Block Copolymers
|
La Fata, Pietro |
|
2008 |
|
4-5 |
p. 693-698 6 p. |
artikel |
92 |
Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces
|
Brillson, L.J. |
|
2009 |
|
4-5 |
p. 206-213 8 p. |
artikel |
93 |
Nanoscale molecular clusters and vibrational relaxation in simple alcohols
|
Pogorelov, V. |
|
2008 |
|
4-5 |
p. 571-576 6 p. |
artikel |
94 |
Nanoscale self-assembly and patterning
|
Berbezier, I. |
|
2008 |
|
4-5 |
p. 303-304 2 p. |
artikel |
95 |
Negative differential resistance in InGaAs strained layer heterostructures
|
Lee, G.S. |
|
1988 |
|
4-5 |
p. 537-540 4 p. |
artikel |
96 |
Negative resistance switching in superlattices: Resonant tunneling or hot electron transfer?
|
Sibille, A. |
|
1988 |
|
4-5 |
p. 459-463 5 p. |
artikel |
97 |
Nonradiative recombination dynamics in InGaN/GaN LED defect system
|
Chernyakov, A.E. |
|
2009 |
|
4-5 |
p. 301-307 7 p. |
artikel |
98 |
Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures
|
Iori, Federico |
|
2008 |
|
4-5 |
p. 337-347 11 p. |
artikel |
99 |
Patterning of permalloy thin films by means of electron-beam lithography and focused ion-beam milling
|
Getlawi, S. |
|
2008 |
|
4-5 |
p. 699-704 6 p. |
artikel |
100 |
PbTeSnTe superlattices
|
Tamor, M.A. |
|
1988 |
|
4-5 |
p. 493-496 4 p. |
artikel |
101 |
Performance and characteristics of SiO 2 imprint mould fabricated by liquid-phase deposition
|
Lee, Ji Hye |
|
2008 |
|
4-5 |
p. 520-527 8 p. |
artikel |
102 |
Phonons in semiconductor superlattices
|
Molinari, E. |
|
1988 |
|
4-5 |
p. 449-457 9 p. |
artikel |
103 |
Photocurrent generation from Ge nanodots in the near UV and visible region
|
De Crescenzi, M. |
|
2008 |
|
4-5 |
p. 331-336 6 p. |
artikel |
104 |
Photoexcited and forbidden LO mode raman scattering in epitaxial InP (001) layers
|
Bland, J.A.C. |
|
1988 |
|
4-5 |
p. 485-487 3 p. |
artikel |
105 |
Photoluminescence excitation and resonance Raman spectroscopy of unconfined transitions in GaAs Al x Ga 1−x As superlattices
|
Jung, P.S. |
|
1988 |
|
4-5 |
p. 581-583 3 p. |
artikel |
106 |
Photoluminescence of Ge nanocrystals self-assembled on SiO2
|
Rowell, N.L. |
|
2008 |
|
4-5 |
p. 305-314 10 p. |
artikel |
107 |
Photoreflectance, Raman scattering, photoluminescence and transmission electron microscopy of MOCVD GaAs GaAlAs multiple quantum wells
|
Pan, S.H. |
|
1988 |
|
4-5 |
p. 609-617 9 p. |
artikel |
108 |
Preface
|
Piqueras, Javier |
|
2009 |
|
4-5 |
p. 143- 1 p. |
artikel |
109 |
Properties of orientation-patterned GaAs crystals studied by cathodoluminescence spectroscopy
|
Martínez, O. |
|
2009 |
|
4-5 |
p. 337-342 6 p. |
artikel |
110 |
Proximity effect coupled V Cr superlattices
|
Davis, B.M. |
|
1988 |
|
4-5 |
p. 465-471 7 p. |
artikel |
111 |
Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium
|
Gaubas, E. |
|
2009 |
|
4-5 |
p. 256-266 11 p. |
artikel |
112 |
Quantum transport calculation of the frequency response of resonant-tunneling heterostructure devices
|
Frensley, William R. |
|
1988 |
|
4-5 |
p. 497-501 5 p. |
artikel |
113 |
Quantum transport in quasi-one-dimensional GaAsAlxGa1−xAs heterostructure devices
|
Chang, A.M. |
|
1988 |
|
4-5 |
p. 515-520 6 p. |
artikel |
114 |
Raman measurements of Ge1−x Mn x epilayers
|
Tay, L.-L. |
|
2008 |
|
4-5 |
p. 315-322 8 p. |
artikel |
115 |
Recombination at the interface between a metallic precipitate and a semiconductor matrix: Application to the electron-beam-induced-current contrast
|
Debez, M. |
|
2009 |
|
4-5 |
p. 469-474 6 p. |
artikel |
116 |
Scanning electron and laser beams induced current (SELBIC) method for observing failures in GaAs high electron mobility transistors
|
Sueyoshi, Haruki |
|
2009 |
|
4-5 |
p. 249-255 7 p. |
artikel |
117 |
Scanning photoluminescent spectroscopy of bioconjugated quantum dots
|
Chornokur, G. |
|
2009 |
|
4-5 |
p. 240-248 9 p. |
artikel |
118 |
Screening of the exciton-LO phonon interaction in In 0.53 Ga 0.47 As InP quantum wells
|
Nash, K.J. |
|
1988 |
|
4-5 |
p. 551-552 2 p. |
artikel |
119 |
Selective Si growth on partially desorbed SiO2/Si(001) surfaces
|
Nguyen, L.H. |
|
2008 |
|
4-5 |
p. 348-353 6 p. |
artikel |
120 |
Self-assembled ferromagnetic and superparamagnetic structures of hybrid Fe block copolymers
|
Sarantopoulou, E. |
|
2008 |
|
4-5 |
p. 457-467 11 p. |
artikel |
121 |
Self-assembly of a chiral porphyrin at surfaces
|
Iavicoli, Patrizia |
|
2008 |
|
4-5 |
p. 556-562 7 p. |
artikel |
122 |
Self-ordered porous alumina membranes with large lattice constant fabricated by hard anodization
|
Vojkuvka, L. |
|
2008 |
|
4-5 |
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