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                             157 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 AFM and TEM study of hydrogenated sputtered Si/Ge multilayers Frigeri, C.
 2009
 4-5 p. 475-481
7 p.
 artikel
2 An effective potential approach for extended density of states in heterostructures Colak, S.
 1988
 4-5 p. 571-576
6 p.
 artikel
3 Angle-dependent laser diffraction in inverse opal photonic crystals Sinitskii, Alexander
 2008
 4-5 p. 626-632
7 p.
 artikel
4 Assembling of nanoparticle arrays using microelectromagnetic matrix Chitu, L.
 2008
 4-5 p. 528-532
5 p.
 artikel
5 Atomic diffusion on nanostructured surfaces Bulou, Hervé
 2008
 4-5 p. 533-541
9 p.
 artikel
6 Atomic force acoustic microscopy characterization of nanostructured selenium–tin thin films Passeri, D.
 2008
 4-5 p. 641-649
9 p.
 artikel
7 Atomic Force Microscope nanolithography on titanium: Influence of the anodic voltage waveform on the formation of oxide nanodots Kim, Tae Young
 2008
 4-5 p. 670-676
7 p.
 artikel
8 A tunneling measurement of the electronic density of states of a superlattice England, P.
 1988
 4-5 p. 409-411
3 p.
 artikel
9 Auger recombination in GaSb AlSb multi quantum well heterostructures Zielinski, E.
 1988
 4-5 p. 473-478
6 p.
 artikel
10 BIAMS 08 COMMITTEES 2009
 4-5 p. 144-
1 p.
 artikel
11 Calculation of transition temperatures of superconductor-metal sandwiches and superlattices Auvil, P.R.
 1988
 4-5 p. 431-433
3 p.
 artikel
12 Capacitance Transient X-ray Absorption Spectroscopy of semiconducting structures Bazlov, N.
 2009
 4-5 p. 190-199
10 p.
 artikel
13 Cathodoluminescence mapping and spectroscopy of Te-doped In x Ga 1 − x Sb grown by the vertical Bridgman method under an alternating magnetic field Díaz-Guerra, C.
 2009
 4-5 p. 407-412
6 p.
 artikel
14 Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires Nogales, E.
 2009
 4-5 p. 156-160
5 p.
 artikel
15 Characterization of anodic aluminium oxide pores fabricated on aluminium templates Su, Shui-Hsiang
 2008
 4-5 p. 514-519
6 p.
 artikel
16 Characterization of structural and magnetic order of Er/Y superlattices Borchers, J.
 1988
 4-5 p. 439-442
4 p.
 artikel
17 CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres González, A.
 2009
 4-5 p. 421-428
8 p.
 artikel
18 Combined MEIS/TEM study of structural defects in Si implanted with a high dose of 100 keV Si ions Sobolev, N.A.
 2009
 4-5 p. 177-181
5 p.
 artikel
19 Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes Fabbri, F.
 2009
 4-5 p. 383-387
5 p.
 artikel
20 Complementary application of Raman scattering and GISAXS in characterization of embedded semiconductor QDs Desnica-Frankovic, I.D.
 2008
 4-5 p. 385-394
10 p.
 artikel
21 Compositional analysis and evolution of defects formed on GaInP epilayers grown on Germanium Galiana, Beatriz
 2009
 4-5 p. 277-284
8 p.
 artikel
22 Copper-containing nanoporous films Lakiss, L.
 2008
 4-5 p. 617-625
9 p.
 artikel
23 Correlating composition and luminescence in AlInGaN epilayers Edwards, P.R.
 2009
 4-5 p. 151-155
5 p.
 artikel
24 Defect induced non-ideal dark I – V characteristics of solar cells Breitenstein, O.
 2009
 4-5 p. 182-189
8 p.
 artikel
25 Density of electronic states in gold nanoclusters pulsed laser deposited on HOPG Troyan, V.
 2008
 4-5 p. 650-656
7 p.
 artikel
26 Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current Sayad, Y.
 2009
 4-5 p. 393-401
9 p.
 artikel
27 Determination of the valence band offset at a HgTe/CdTe heterojunction by magnetooptics Yang, Z.
 1988
 4-5 p. 559-563
5 p.
 artikel
28 Domain instability in semiconductor superlattices Gružinskis, V.
 1988
 4-5 p. 627-628
2 p.
 artikel
29 Driving the self assembly of gold nanoparticle structures using highly oriented PTFE templates George, Chandramohan
 2008
 4-5 p. 599-607
9 p.
 artikel
30 EBIC and CL studies of ELOG GaN films Yakimov, E.B.
 2009
 4-5 p. 308-313
6 p.
 artikel
31 EBIC/PL investigations of dislocation network produced by silicon wafer direct bonding Jia, G.
 2009
 4-5 p. 314-320
7 p.
 artikel
32 Effect of electron irradiation on defect structure of 6H–SiC grown by PVT method Kozubal, M.
 2009
 4-5 p. 402-406
5 p.
 artikel
33 Effect of particle size on magnetic properties of LaMnO 3 + δ nanoparticles Markovich, V.
 2008
 4-5 p. 476-482
7 p.
 artikel
34 Effects of Ga doping on optical and structural properties of ZnO epilayers Buyanova, I.A.
 2009
 4-5 p. 413-420
8 p.
 artikel
35 Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films Chen, Bin
 2009
 4-5 p. 295-300
6 p.
 artikel
36 Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM Herrera, M.
 2009
 4-5 p. 435-443
9 p.
 artikel
37 Electronic properties of pseudomorphic InGaAs AlGaAs (on GaAs) and InGaAs InAlAs (on InP) Modfet structures Jaffe, Mark
 1988
 4-5 p. 395-404
10 p.
 artikel
38 Electronic states of semiconductor/metal/semiconductor quantum well structures Huberman, M.L.
 1988
 4-5 p. 555-558
4 p.
 artikel
39 Electronic structure of quantum-well states revealed under high pressures Wolford, D.J.
 1988
 4-5 p. 525-535
11 p.
 artikel
40 Electronic structure of strained layer Si GexSi1−x superlattices from tight binding theory Rücker, H.
 1988
 4-5 p. 511-513
3 p.
 artikel
41 Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon Torchynska, T.V.
 2009
 4-5 p. 267-270
4 p.
 artikel
42 Energy levels and magneto-electric subbands in some quasi uni-dimensional semiconductor heterostructures Brum, J.A.
 1988
 4-5 p. 443-448
6 p.
 artikel
43 Enhanced and quenched Raman scattering by interface phonons in semiconductor superlattices: What are the defects? Gammon, D.
 1988
 4-5 p. 405-407
3 p.
 artikel
44 Epitaxial growth of PbTe on (111)BaF2 and (100)GaAs Clemens, H.
 1988
 4-5 p. 591-596
6 p.
 artikel
45 Errata 1988
 4-5 p. i-
1 p.
 artikel
46 Evaluation of diffusion-recombination parameters in electrodeposited CuIn(S, Se)2 solar cells by means of electron beam induced current experiments and modelling Sieber, B.
 2009
 4-5 p. 161-167
7 p.
 artikel
47 Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions Frigeri, C.
 2009
 4-5 p. 451-457
7 p.
 artikel
48 EXAFS studies of the microstructure of semiconductor alloys, defects, and metal-semiconductor interfaces Bunker, Bruce A.
 1988
 4-5 p. 489-492
4 p.
 artikel
49 Exciton capture and thermal escape in InAs dot-in-a-well laser structures Torchynska, T.V.
 2009
 4-5 p. 349-355
7 p.
 artikel
50 Exciton related photoluminescence stimulation in SiC nanocrystals Torchynska, T.
 2009
 4-5 p. 222-227
6 p.
 artikel
51 Excitons and polaritons in semiconductor/insulator quantum wells and superlattices Keldysh, L.V.
 1988
 4-5 p. 637-642
6 p.
 artikel
52 Extended and local plasmons in a lateral superlattice Heitmann, D.
 1988
 4-5 p. 503-506
4 p.
 artikel
53 Field spectrum anisotropy in multiple quantum-well semiconductor lasers subjected to high magnetic fields Vahala, Kerry
 1988
 4-5 p. 507-510
4 p.
 artikel
54 Focused ion beam directed self-assembly (Cu2O on SrTiO3 ): FIB pit and Cu2O nanodot evolution Groves, J.F.
 2008
 4-5 p. 677-685
9 p.
 artikel
55 Formation of composite nanostructures by corrosive deposition of copper into porous silicon Bandarenka, H.
 2008
 4-5 p. 583-587
5 p.
 artikel
56 Formation of Ge nanocrystals and evolution of the oxide matrix in as-deposited and annealed LPCVD SiGeO films Rodríguez, A.
 2009
 4-5 p. 343-348
6 p.
 artikel
57 Formation of Ge-nanocrystals in SiO2 matrix by magnetron sputtering and post-deposition thermal treatment Desnica, U.V.
 2008
 4-5 p. 323-330
8 p.
 artikel
58 Free carrier scattering from quasi-2D optical phonons in semiconductor quantum wells and superlattices Wendler, L.
 1988
 4-5 p. 577-580
4 p.
 artikel
59 GaAs quantum well structures investigation by local cathodoluminescence Shakhmin, A.A.
 2009
 4-5 p. 376-382
7 p.
 artikel
60 Gold nanoparticles self-assembled onto passivated glass substrates: Tuning the transition from 2D to 1D structures George, Chandramohan
 2008
 4-5 p. 608-616
9 p.
 artikel
61 Growth mechanisms of self-assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets Uccelli, E.
 2008
 4-5 p. 425-430
6 p.
 artikel
62 Growth of arrays of silicon nanowires with centrosymmetric distribution over silicon substrate Hourlier, D.
 2008
 4-5 p. 362-373
12 p.
 artikel
63 High efficiency protein separation with organosilane assembled silica coated magnetic nanoparticles Chang, Jeong Ho
 2008
 4-5 p. 442-448
7 p.
 artikel
64 Hole subbands in one-dimensional quantum well wires Sweeny, Mark
 1988
 4-5 p. 623-626
4 p.
 artikel
65 Hot electron transistors grown by MOCVD Kawai, H.
 1988
 4-5 p. 545-549
5 p.
 artikel
66 Hydrogen desorption effect on cathodoluminescence of ZnO Dierre, B.
 2009
 4-5 p. 321-325
5 p.
 artikel
67 InAs/AlGaAs QDs for intersubband devices Schramboeck, M.
 2008
 4-5 p. 411-415
5 p.
 artikel
68 Infrared photoluminescence and Raman spectra in the Y2O3–ZrO2 system Torres, D.I.
 2009
 4-5 p. 482-488
7 p.
 artikel
69 Injection of charge nanostructures into insulators Fitting, H.-J.
 2009
 4-5 p. 200-205
6 p.
 artikel
70 In-situ study of the interface formation in organic multilayers Sassella, A.
 2008
 4-5 p. 550-555
6 p.
 artikel
71 Ion damage during preparation of nanostructures in magnetite by means of focused ion-beam (FIB) milling Koblischka-Veneva, A.
 2008
 4-5 p. 468-475
8 p.
 artikel
72 Ion implantation and cluster formation in silica Salh, Roushdey
 2009
 4-5 p. 362-368
7 p.
 artikel
73 Ion-implantation damage and annealing effects in (InGa)As GaAs strained-layer semiconductor systems Myers, D.R.
 1988
 4-5 p. 585-589
5 p.
 artikel
74 Langmuir–Blodgett Ag nanoparticle monolayer patterned by pulsed laser-induced selective desorption Shin, Hyunkwon
 2008
 4-5 p. 657-663
7 p.
 artikel
75 Local anodic oxidation on dodecyl terminated silicon(100) Graaf, Harald
 2008
 4-5 p. 402-410
9 p.
 artikel
76 Low temperature characterization of AlSi diffusion kinetics Patrick Dugan, M.
 1988
 4-5 p. 565-570
6 p.
 artikel
77 Macroscopic description of magnetic behaviors induced by spin transfer in magnetic multilayer nanostructures Ren, Min
 2008
 4-5 p. 431-435
5 p.
 artikel
78 Magnetic nanocomposites fabricated by selective metal deposition in and on self-assembled mesoporous silicon Granitzer, P.
 2008
 4-5 p. 436-441
6 p.
 artikel
79 Magnetic properties of Fe Mn superlattices Motomura, Yoshihiro
 1988
 4-5 p. 479-483
5 p.
 artikel
80 Magnetoresistance of Fe–SrF2 single-electron devices with a current-in-plane geometry Arita, M.
 2008
 4-5 p. 449-456
8 p.
 artikel
81 Many-electron edge singularity at the Fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells Nash, K.J.
 1988
 4-5 p. 553-554
2 p.
 artikel
82 Mapping strains at the nanoscale using electron back scatter diffraction Wilkinson, Angus J.
 2009
 4-5 p. 285-294
10 p.
 artikel
83 Mechanical strength of porous silicon and its possible applications Klyshko, A.
 2008
 4-5 p. 374-377
4 p.
 artikel
84 Mesoporous layers of TiO2 as highly efficient photocatalysts for the purification of air Kalousek, Vít
 2008
 4-5 p. 506-513
8 p.
 artikel
85 Micro-scale modification of diamond-like carbon and copper electroplating by scanning probe field emission current method Hayashi, Shigehiro
 2009
 4-5 p. 326-331
6 p.
 artikel
86 Microstructure of Au nanoclusters formed in and on SiO2 Ruffino, F.
 2008
 4-5 p. 588-598
11 p.
 artikel
87 Mn doping of germanium nanowires by vapour–liquid–solid deposition Grossi, V.
 2008
 4-5 p. 489-495
7 p.
 artikel
88 Molecular dynamic studies of chemical reactions at semiconductor surfaces Menon, Madhu
 1988
 4-5 p. 629-631
3 p.
 artikel
89 Monte Carlo simulation of low energy electron injection and scattering in insulating layers Fitting, H.-J.
 2009
 4-5 p. 356-361
6 p.
 artikel
90 Monte Carlo simulation of the EBIC collection efficiency of a Schottky nanocontact Ledra, M.
 2009
 4-5 p. 444-450
7 p.
 artikel
91 Nano-patterning with Block Copolymers La Fata, Pietro
 2008
 4-5 p. 693-698
6 p.
 artikel
92 Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces Brillson, L.J.
 2009
 4-5 p. 206-213
8 p.
 artikel
93 Nanoscale molecular clusters and vibrational relaxation in simple alcohols Pogorelov, V.
 2008
 4-5 p. 571-576
6 p.
 artikel
94 Nanoscale self-assembly and patterning Berbezier, I.
 2008
 4-5 p. 303-304
2 p.
 artikel
95 Negative differential resistance in InGaAs strained layer heterostructures Lee, G.S.
 1988
 4-5 p. 537-540
4 p.
 artikel
96 Negative resistance switching in superlattices: Resonant tunneling or hot electron transfer? Sibille, A.
 1988
 4-5 p. 459-463
5 p.
 artikel
97 Nonradiative recombination dynamics in InGaN/GaN LED defect system Chernyakov, A.E.
 2009
 4-5 p. 301-307
7 p.
 artikel
98 Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures Iori, Federico
 2008
 4-5 p. 337-347
11 p.
 artikel
99 Patterning of permalloy thin films by means of electron-beam lithography and focused ion-beam milling Getlawi, S.
 2008
 4-5 p. 699-704
6 p.
 artikel
100 PbTeSnTe superlattices Tamor, M.A.
 1988
 4-5 p. 493-496
4 p.
 artikel
101 Performance and characteristics of SiO 2 imprint mould fabricated by liquid-phase deposition Lee, Ji Hye
 2008
 4-5 p. 520-527
8 p.
 artikel
102 Phonons in semiconductor superlattices Molinari, E.
 1988
 4-5 p. 449-457
9 p.
 artikel
103 Photocurrent generation from Ge nanodots in the near UV and visible region De Crescenzi, M.
 2008
 4-5 p. 331-336
6 p.
 artikel
104 Photoexcited and forbidden LO mode raman scattering in epitaxial InP (001) layers Bland, J.A.C.
 1988
 4-5 p. 485-487
3 p.
 artikel
105 Photoluminescence excitation and resonance Raman spectroscopy of unconfined transitions in GaAs Al x Ga 1−x As superlattices Jung, P.S.
 1988
 4-5 p. 581-583
3 p.
 artikel
106 Photoluminescence of Ge nanocrystals self-assembled on SiO2 Rowell, N.L.
 2008
 4-5 p. 305-314
10 p.
 artikel
107 Photoreflectance, Raman scattering, photoluminescence and transmission electron microscopy of MOCVD GaAs GaAlAs multiple quantum wells Pan, S.H.
 1988
 4-5 p. 609-617
9 p.
 artikel
108 Preface Piqueras, Javier
 2009
 4-5 p. 143-
1 p.
 artikel
109 Properties of orientation-patterned GaAs crystals studied by cathodoluminescence spectroscopy Martínez, O.
 2009
 4-5 p. 337-342
6 p.
 artikel
110 Proximity effect coupled V Cr superlattices Davis, B.M.
 1988
 4-5 p. 465-471
7 p.
 artikel
111 Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium Gaubas, E.
 2009
 4-5 p. 256-266
11 p.
 artikel
112 Quantum transport calculation of the frequency response of resonant-tunneling heterostructure devices Frensley, William R.
 1988
 4-5 p. 497-501
5 p.
 artikel
113 Quantum transport in quasi-one-dimensional GaAsAlxGa1−xAs heterostructure devices Chang, A.M.
 1988
 4-5 p. 515-520
6 p.
 artikel
114 Raman measurements of Ge1−x Mn x epilayers Tay, L.-L.
 2008
 4-5 p. 315-322
8 p.
 artikel
115 Recombination at the interface between a metallic precipitate and a semiconductor matrix: Application to the electron-beam-induced-current contrast Debez, M.
 2009
 4-5 p. 469-474
6 p.
 artikel
116 Scanning electron and laser beams induced current (SELBIC) method for observing failures in GaAs high electron mobility transistors Sueyoshi, Haruki
 2009
 4-5 p. 249-255
7 p.
 artikel
117 Scanning photoluminescent spectroscopy of bioconjugated quantum dots Chornokur, G.
 2009
 4-5 p. 240-248
9 p.
 artikel
118 Screening of the exciton-LO phonon interaction in In 0.53 Ga 0.47 As InP quantum wells Nash, K.J.
 1988
 4-5 p. 551-552
2 p.
 artikel
119 Selective Si growth on partially desorbed SiO2/Si(001) surfaces Nguyen, L.H.
 2008
 4-5 p. 348-353
6 p.
 artikel
120 Self-assembled ferromagnetic and superparamagnetic structures of hybrid Fe block copolymers Sarantopoulou, E.
 2008
 4-5 p. 457-467
11 p.
 artikel
121 Self-assembly of a chiral porphyrin at surfaces Iavicoli, Patrizia
 2008
 4-5 p. 556-562
7 p.
 artikel
122 Self-ordered porous alumina membranes with large lattice constant fabricated by hard anodization Vojkuvka, L.
 2008
 4-5 p. 577-582
6 p.
 artikel
123 Self-organization of ammonium silicon hexafluoride complex low-dimensional structures on Silicon Kalem, S.
 2008
 4-5 p. 705-713
9 p.
 artikel
124 Shubnikov-de Haas measurements of the 2-D electron gas in pseudomorphic In0.1Ga0.9As grown on GaAs Szydlik, P.P.
 1988
 4-5 p. 619-621
3 p.
 artikel
125 Silicon nanoparticles synthesized in SiO2 pockets by stencil-masked low energy ion implantation and thermal annealing Grisolia, J.
 2008
 4-5 p. 395-401
7 p.
 artikel
126 Silicon nanowires grown in nanoporous alumina matrices on 〈 100 〉 oriented silicon substrates investigated by electron microscopy David, Thomas
 2008
 4-5 p. 354-361
8 p.
 artikel
127 Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates Martínez, O.
 2009
 4-5 p. 214-221
8 p.
 artikel
128 Stability and metastability of semiconductor strained-layer structures Dodson, Brian W.
 1988
 4-5 p. 417-422
6 p.
 artikel
129 Strained layer and lattice matched transverse junction stripe quantum well lasers for continuous room temperature operation Kolbas, R.M.
 1988
 4-5 p. 603-608
6 p.
 artikel
130 Structural and cathodoluminescence assessment of transition metal oxide nanostructures grown by thermal deposition methods Díaz-Guerra, C.
 2009
 4-5 p. 145-150
6 p.
 artikel
131 Structural studies of (Ga,In)(As,P) alloys and (InAs)m(GaAs)n strained-layer superlattices by fluorescence-detected EXAFS Oyanagi, Hiroyuki
 1988
 4-5 p. 413-416
4 p.
 artikel
132 Studies of opal crystals infiltrated with iron porphyrin Sabataityte, J.
 2008
 4-5 p. 664-669
6 p.
 artikel
133 Study of charge storage characteristics of memory devices embedded with metallic nanoparticles Sargentis, Ch.
 2008
 4-5 p. 483-488
6 p.
 artikel
134 Study of impurity induced disordering in AlGaAs GaAs multi-quantum well structures by photothermal deflection spectroscopy and photoluminescence Shieh, C.
 1988
 4-5 p. 597-602
6 p.
 artikel
135 Study of ion diffusion in superionic crystals by EPMA and local CL Kolesnikova, Ekaterina V.
 2009
 4-5 p. 369-375
7 p.
 artikel
136 Study of microstructured indium oxide by cathodoluminescence and XPS microscopy Magdas, D.A.
 2009
 4-5 p. 429-434
6 p.
 artikel
137 Sub-bandgap photoluminescence from as-grown and annealed layers of CdTe Sochinskii, N.V.
 2009
 4-5 p. 228-233
6 p.
 artikel
138 Surface acoustic wave-superlattice interaction in separate-medium structure Tabib-Azar, M.
 1988
 4-5 p. 643-651
9 p.
 artikel
139 Surface monitoring of HEMT structures Baranov, E.I.
 2009
 4-5 p. 332-336
5 p.
 artikel
140 Surface passivation by silicon nitride in Laser Grooved Buried Contact (LGBC) silicon solar cells Claudio, G.
 2009
 4-5 p. 234-239
6 p.
 artikel
141 Surface topology of GaSe oxidized crystals Kovalyuk, Z.D.
 2008
 4-5 p. 416-419
4 p.
 artikel
142 Synchrotron-based investigation of iron precipitation in multicrystalline silicon Seifert, W.
 2009
 4-5 p. 168-176
9 p.
 artikel
143 Synthesis and optical spectroscopy of ZnO nanowires Güell, F.
 2009
 4-5 p. 271-276
6 p.
 artikel
144 Template-assisted preparation of films of transparent conductive indium tin oxide Fattakhova-Rohlfing, Dina
 2008
 4-5 p. 686-692
7 p.
 artikel
145 Testing the upper limit of InAs/GaAs self-organized quantum dots density by fast growth rate Chia, C.K.
 2008
 4-5 p. 420-424
5 p.
 artikel
146 The formation of organic (propolis films)/inorganic (layered crystals) interfaces for optoelectronic applications Drapak, S.I.
 2008
 4-5 p. 563-570
8 p.
 artikel
147 The influence of roughness on the mechanical spectroscopy of SiO2 nanorods grown by e-beam irradiation Betancourt, Jesuan
 2009
 4-5 p. 458-468
11 p.
 artikel
148 The role of thermodynamic phase diagrams and lattice matching in superlattice growth Schuller, Ivan K.
 1988
 4-5 p. 521-524
4 p.
 artikel
149 The theory of electron-polar phonon scattering rates in semiconductor micro-structures Mason, B.A.
 1988
 4-5 p. 423-429
7 p.
 artikel
150 TiO2–Me n O m -based materials Kobasa, I.M.
 2008
 4-5 p. 496-505
10 p.
 artikel
151 Transport in GaAs heterojunction ring structures Ford, C.J.B.
 1988
 4-5 p. 541-544
4 p.
 artikel
152 Tuning reactive epitaxy of silicides with surface steps: Silicide quantum dot arrays on Si(111) Fernández, Laura
 2008
 4-5 p. 378-384
7 p.
 artikel
153 Tuning the redox potential in molecular monolayers covalently bound to H–Si(100) electrodes via distinct C–C tethering arms Zanoni, R.
 2008
 4-5 p. 542-549
8 p.
 artikel
154 Tunnel current measurement of MgO and MgO/Fe/MgO nanoregions during TEM observation Arita, Masashi
 2008
 4-5 p. 633-640
8 p.
 artikel
155 Ultrafast optical nonlinearity in quantum well structures with DC electric field Yamanishi, Masamichi
 1988
 4-5 p. 633-636
4 p.
 artikel
156 X-ray studies of interfacial roughness in ZnSe GaAs heterostructures Krol, A.
 1988
 4-5 p. 435-437
3 p.
 artikel
157 Yttrium silicide films into Si(111) — Fabrication and properties Ayache, R.
 2009
 4-5 p. 388-392
5 p.
 artikel
                             157 gevonden resultaten
 
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