| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Activation and deactivation of phosphorus in silicon-on-insulator substrates
|
Chang, Ruey-Dar
|
|
2016
|
|
P2 |
p. 219-222
4 p.
|
artikel
|
| 2 |
A new 4H-SiC hydrogen sensor with oxide ramp termination
|
Pascu, Razvan
|
|
2016
|
|
P2 |
p. 268-272
5 p.
|
artikel
|
| 3 |
Atomistic modeling of epitaxial growth of semiconductor materials
|
Martin-Bragado, Ignacio
|
|
2016
|
|
P2 |
p. 223-229
7 p.
|
artikel
|
| 4 |
Chlorine based focused electron beam induced etching: A novel way to pattern germanium
|
Shawrav, M.M.
|
|
2016
|
|
P2 |
p. 170-173
4 p.
|
artikel
|
| 5 |
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy
|
Giannazzo, F.
|
|
2016
|
|
P2 |
p. 174-178
5 p.
|
artikel
|
| 6 |
Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys
|
Payet, Anthony
|
|
2016
|
|
P2 |
p. 247-250
4 p.
|
artikel
|
| 7 |
Defect evolution and dopant activation in laser annealed Si and Ge
|
Cristiano, F.
|
|
2016
|
|
P2 |
p. 188-195
8 p.
|
artikel
|
| 8 |
Dopant transfer from poly-si thin films to c-Si: An alternative technique for device processing
|
Ricardo, L.
|
|
2016
|
|
P2 |
p. 210-214
5 p.
|
artikel
|
| 9 |
E-MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor CMOS devices
|
Napolitani, Enrico
|
|
2016
|
|
P2 |
p. 165-
1 p.
|
artikel
|
| 10 |
First-principles investigation of defects at GaAs/oxide interfaces
|
Houssa, M.
|
|
2016
|
|
P2 |
p. 239-241
3 p.
|
artikel
|
| 11 |
III–V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing
|
Wutzler, Rene
|
|
2016
|
|
P2 |
p. 166-169
4 p.
|
artikel
|
| 12 |
Impact of the drain and source extensions on nanoscale Double-Gate Junctionless MOSFET analog and RF performances
|
Bentrcia, T.
|
|
2016
|
|
P2 |
p. 264-267
4 p.
|
artikel
|
| 13 |
Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding
|
Kang, J.
|
|
2016
|
|
P2 |
p. 259-263
5 p.
|
artikel
|
| 14 |
Kinetic Monte Carlo simulations of vacancy evolution in graphene
|
Parisi, L.
|
|
2016
|
|
P2 |
p. 179-182
4 p.
|
artikel
|
| 15 |
Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
|
Marqués, Luis A.
|
|
2016
|
|
P2 |
p. 235-238
4 p.
|
artikel
|
| 16 |
Oxygen behavior in germanium during melting laser thermal annealing
|
Milazzo, R.
|
|
2016
|
|
P2 |
p. 196-199
4 p.
|
artikel
|
| 17 |
Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE
|
Bouzidi, M.
|
|
2016
|
|
P2 |
p. 273-276
4 p.
|
artikel
|
| 18 |
Planar nanowire transistors from two-dimensional materials
|
Hähnlein, B.
|
|
2016
|
|
P2 |
p. 183-187
5 p.
|
artikel
|
| 19 |
RF plasma treatment of shallow ion-implanted layers of germanium
|
Okholin, P.N.
|
|
2016
|
|
P2 |
p. 204-209
6 p.
|
artikel
|
| 20 |
Silicon doped by molecular doping technique: Role of the surface layers of doped Si on the electrical characteristics
|
Caccamo, Sebastiano
|
|
2016
|
|
P2 |
p. 200-203
4 p.
|
artikel
|
| 21 |
Silicon germanium interdiffusion in SiGe device fabrication: A calibrated TCAD model
|
Zechner, Christoph
|
|
2016
|
|
P2 |
p. 230-234
5 p.
|
artikel
|
| 22 |
Simulation of thermo-mechanical effect in bulk-silicon FinFETs
|
Burenkov, Alex
|
|
2016
|
|
P2 |
p. 242-246
5 p.
|
artikel
|
| 23 |
Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation
|
Boureau, Victor
|
|
2016
|
|
P2 |
p. 251-254
4 p.
|
artikel
|
| 24 |
Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications
|
Ritzenthaler, R.
|
|
2016
|
|
P2 |
p. 255-258
4 p.
|
artikel
|
| 25 |
Te implantation in Ge(001) for n-type doping applications
|
Perrin Toinin, J.
|
|
2016
|
|
P2 |
p. 215-218
4 p.
|
artikel
|
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