nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Addendum:“Generalization of Einstein relation for organic semiconductor thin films” [Material Science in Semiconductor Processing 8 (2005) 525–530]
|
Peng, Y.Q. |
|
2005 |
|
5 |
p. 613- 1 p. |
artikel |
2 |
Analysis of the properties of germanium/zinc silicate film growth through a simple thermal evaporation technique for hydrogen gas sensing and deep UV photodetector application
|
Muzafa Jumidali, Mohd |
|
2013 |
|
5 |
p. 1360-1364 5 p. |
artikel |
3 |
A study of atypical grain growth properties for SnO2 thin films
|
Min, Soon |
|
2013 |
|
5 |
p. 1267-1270 4 p. |
artikel |
4 |
Band gap in tungsten sulphoselenide single crystals determined by the optical absorption method
|
Gujarathi, D.N. |
|
2005 |
|
5 |
p. 576-586 11 p. |
artikel |
5 |
Characterization of nanocrystalline PbS thin films prepared using microwave-assisted chemical bath deposition
|
Obaid, A.S. |
|
2012 |
|
5 |
p. 564-571 8 p. |
artikel |
6 |
Characterization of ZrTiO4 thin films prepared by sol–gel method
|
Hsu, Cheng-Hsing |
|
2013 |
|
5 |
p. 1262-1266 5 p. |
artikel |
7 |
Characterizations of solid-state microwave-synthesized Sb2Te3-based alloys with various compositions of bismuth in Bi2x Sb2(1−x)Te3
|
Kadhim, A. |
|
2012 |
|
5 |
p. 549-554 6 p. |
artikel |
8 |
Dependence of annealing on stability of transparent amorphous InGaZnO thin film transistor
|
Li, Xifeng |
|
2013 |
|
5 |
p. 1292-1296 5 p. |
artikel |
9 |
Design considerations of source and drain regions in nano double gate MOSFETs
|
Orouji, Ali A. |
|
2012 |
|
5 |
p. 572-577 6 p. |
artikel |
10 |
Editorial Board
|
|
|
2005 |
|
5 |
p. CO2- 1 p. |
artikel |
11 |
Effect of different sputtering gas mixtures on the structural, electrical, and optical properties of p-type NiO thin films
|
Oh, Joon-Ho |
|
2013 |
|
5 |
p. 1346-1351 6 p. |
artikel |
12 |
Effect of NaOH solution on surface textured ZnO: Al films prepared by pulsed direct current magnetron sputtering
|
Wang, Ying |
|
2012 |
|
5 |
p. 555-558 4 p. |
artikel |
13 |
Effect of zinc doping and temperature on the properties of sprayed CuInS2 thin films
|
Mahendran, C. |
|
2012 |
|
5 |
p. 522-530 9 p. |
artikel |
14 |
Epitaxial electrodeposition of lead selenide films on indium phosphide single crystals
|
Beaunier, L. |
|
2001 |
|
5 |
p. 433-436 4 p. |
artikel |
15 |
Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K
|
Korucu, D. |
|
2012 |
|
5 |
p. 480-485 6 p. |
artikel |
16 |
Evaluation of the hydrostatic pressure effect on Mn/p-Si Schottky barrier diode electrical parameters and interface states
|
Fiat, Songül |
|
2012 |
|
5 |
p. 461-466 6 p. |
artikel |
17 |
Fabrication of ultra-shallow junctions with high electrical activation by excimer laser annealing
|
Fortunato, G |
|
2001 |
|
5 |
p. 417-423 7 p. |
artikel |
18 |
Formation of NiCoSi x silicide by thermal annealing of Ni/Co bilayer on Si substrate
|
Song, Ohsung |
|
2005 |
|
5 |
p. 608-612 5 p. |
artikel |
19 |
Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET
|
Arefinia, Zahra |
|
2013 |
|
5 |
p. 1240-1247 8 p. |
artikel |
20 |
High performance dye-sensitized solar cells (DSSCs) achieved via electrophoretic technique by optimizing of photoelectrode properties
|
Hamadanian, Masood |
|
2013 |
|
5 |
p. 1352-1359 8 p. |
artikel |
21 |
Hot-wire vapor deposited tungsten and molybdenum oxide films used for carrier injection/transport in organic optoelectronic devices
|
Vasilopoulou, Maria |
|
2013 |
|
5 |
p. 1196-1216 21 p. |
artikel |
22 |
Influence of cadmium concentration on the optical and structural properties of cadmium selenide thin films
|
Khudiar, Ausama I. |
|
2012 |
|
5 |
p. 536-542 7 p. |
artikel |
23 |
Influence of molar concentration on the physical properties of nebulizer-sprayed ZnO thin films for ammonia gas sensor
|
Mariappan, R. |
|
2013 |
|
5 |
p. 1328-1335 8 p. |
artikel |
24 |
Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films
|
Cheng, Yi |
|
2013 |
|
5 |
p. 1303-1307 5 p. |
artikel |
25 |
Investigation of the Electrical and Thermal Performance of SOI MOSFETs with Modified Channel Engineering
|
Rahimian, Morteza |
|
2013 |
|
5 |
p. 1248-1256 9 p. |
artikel |
26 |
Investigation on switching behavior of ZrO2 thin film for memory device applications
|
Choi, Kyung-Hyun |
|
2013 |
|
5 |
p. 1285-1291 7 p. |
artikel |
27 |
Journal select
|
|
|
2001 |
|
5 |
p. 443- 1 p. |
artikel |
28 |
Low temperature electrical resistivity of polycrystalline La0.67Sr0.33MnO3 thin films
|
Narjis, A. |
|
2013 |
|
5 |
p. 1257-1261 5 p. |
artikel |
29 |
Manganese oxide thin-films for current-signal sensing and thermal insulation
|
Baca, Roberto |
|
2013 |
|
5 |
p. 1280-1284 5 p. |
artikel |
30 |
Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
|
Pérez-Tomás, A. |
|
2013 |
|
5 |
p. 1336-1345 10 p. |
artikel |
31 |
Molecular dynamics study of copper trench filling in damascene process
|
Hong, R.T. |
|
2005 |
|
5 |
p. 587-601 15 p. |
artikel |
32 |
Morphological changes of the Si [100] surface after treatment with concentrated and diluted HF
|
Palermo, V. |
|
2001 |
|
5 |
p. 437-441 5 p. |
artikel |
33 |
Morphology-control of crystallites precipitated from ZnO gel films by applying electric field during hot-water treatment
|
Matsuda, Atsunori |
|
2013 |
|
5 |
p. 1232-1239 8 p. |
artikel |
34 |
Non-ohmic properties and impulse aging behavior of quaternary ZnO–V2O5–Mn3O4–Er2O3 semiconducting varistors with sintering processing
|
Nahm, Choon-Woo |
|
2013 |
|
5 |
p. 1308-1315 8 p. |
artikel |
35 |
Numerical calculation model of a single wafer wet etcher using a swinging nozzle
|
Habuka, Hitoshi |
|
2012 |
|
5 |
p. 543-548 6 p. |
artikel |
36 |
PatentsALERT
|
|
|
2001 |
|
5 |
p. 445-447 3 p. |
artikel |
37 |
Photo-assisted metal-organic chemical vapor deposition of CaCu3Ti4O12 (CCTO) thin films
|
Gupta, N. |
|
2013 |
|
5 |
p. 1297-1302 6 p. |
artikel |
38 |
Pulsed laser deposition and characterization of La1−x Sr x MnO3
|
Calderón V, S. |
|
2012 |
|
5 |
p. 492-498 7 p. |
artikel |
39 |
Recent development of gallium oxide thin film on GaN
|
Oon, Hooi Shy |
|
2013 |
|
5 |
p. 1217-1231 15 p. |
artikel |
40 |
Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics
|
Razavi, S.M. |
|
2012 |
|
5 |
p. 516-521 6 p. |
artikel |
41 |
Review of preparation and optoelectronic characteristics of Cu2O-based solar cells with nanostructure
|
Chen, Lung-Chien |
|
2013 |
|
5 |
p. 1172-1185 14 p. |
artikel |
42 |
Stress effects on defects and dopant diffusion in Si
|
Aziz, Michael J. |
|
2001 |
|
5 |
p. 397-403 7 p. |
artikel |
43 |
Structural characterization of Al x Ga1−x Sb grown by LPE
|
Juárez Díaz, G. |
|
2012 |
|
5 |
p. 472-479 8 p. |
artikel |
44 |
Structural, electronic and elastic properties of wurtzite-structured Tl x Al1−x N alloys from first principles
|
Shi, Liwei |
|
2012 |
|
5 |
p. 499-504 6 p. |
artikel |
45 |
Structural properties of β-Ga2O3 formed by dry thermal oxidization process on GaN
|
Wei, Wei |
|
2012 |
|
5 |
p. 578-581 4 p. |
artikel |
46 |
Study of structural and luminescent properties of high-quality ZnO thin films treatment with hydrogen peroxide solution
|
Chen, Yufeng |
|
2005 |
|
5 |
p. 569-575 7 p. |
artikel |
47 |
Swift heavy ion irradiation induced modification of electrical characteristics of Au/n-Si Schottky barrier diode
|
Singh, R. |
|
2001 |
|
5 |
p. 425-432 8 p. |
artikel |
48 |
Synthesis and characterization of sol-processed α-MnO2 nanostructures
|
Ramarajan, D. |
|
2012 |
|
5 |
p. 559-563 5 p. |
artikel |
49 |
Synthesis and properties of Fe3O4/SiO2/TiO2 nanocomposites by hydrothermal synthetic method
|
Fan, Yanhua |
|
2012 |
|
5 |
p. 582-585 4 p. |
artikel |
50 |
Synthesis of CuInSe2 monodisperse nanoparticles and the nanorings shape evolution via a green solution reaction route
|
Wang, Wen-Jun |
|
2012 |
|
5 |
p. 467-471 5 p. |
artikel |
51 |
Synthesis of Sn doped ZnO/TiO2 nanocomposite film and their application to H2 gas sensing properties
|
Benkara, S. |
|
2013 |
|
5 |
p. 1271-1279 9 p. |
artikel |
52 |
Temperature and hydrostatic pressure dependence of the electronic structure of Al x Ga1−x As alloys
|
Degheidy, Abdel Razik |
|
2012 |
|
5 |
p. 505-515 11 p. |
artikel |
53 |
Temperature dependence of electrical properties for MOS capacitor with HfO2/SiO2 gate dielectric stack
|
Yu, T. |
|
2013 |
|
5 |
p. 1321-1327 7 p. |
artikel |
54 |
The role of the transition function in a continuum model for kinetic roughening and coarsening in thin films
|
Stein, Oliver |
|
2001 |
|
5 |
p. 405-416 12 p. |
artikel |
55 |
The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current–voltage–temperature (I–V–T) characteristics
|
Kınacı, Barış |
|
2012 |
|
5 |
p. 531-535 5 p. |
artikel |
56 |
Thickness dependent structural and optical properties of In/Te bilayer thin films
|
Matheswaran, P. |
|
2012 |
|
5 |
p. 486-491 6 p. |
artikel |
57 |
This is one of a series of Special Topical Issues published in Materials Science in Semiconductor Processing, focusing on Advanced Oxides for Electronics
|
Cheong, K.Y. |
|
2013 |
|
5 |
p. 1171- 1 p. |
artikel |
58 |
TiO2-based structures for nanoscale memory applications
|
Fröhlich, K. |
|
2013 |
|
5 |
p. 1186-1195 10 p. |
artikel |
59 |
Vertically aligned ZnO nanowires prepared by thermal oxidation of RF magnetron sputtered metallic zinc films
|
Chao, Liang-Chiun |
|
2013 |
|
5 |
p. 1316-1320 5 p. |
artikel |
60 |
WSi x /WN/polysilicon DRAM gate stack with a 50Å WN layer as a diffusion barrier and an etch stop
|
Lee, Heon |
|
2005 |
|
5 |
p. 602-607 6 p. |
artikel |