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                             57 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Analyses of interfacial reactions at different levels of interconnection Laurila, T.
 2004
 4-6 p. 307-317
11 p.
 artikel
2 Anticipation of nitrided oxides electrical thickness based on XPS measurement Bienacel, J.
 2004
 4-6 p. 181-183
3 p.
 artikel
3 Application of Ru-based gate materials for CMOS technology T˘apajna, M.
 2004
 4-6 p. 271-276
6 p.
 artikel
4 Atomic layer chemical vapour deposition of copper Mane, Anil U.
 2004
 4-6 p. 343-347
5 p.
 artikel
5 Author index 2004
 4-6 p. I-III
nvt p.
 artikel
6 Chalcogenide thin films for direct resistors fabrication and trimming Lullo, G.
 2004
 4-6 p. 337-341
5 p.
 artikel
7 Contents list 2004
 4-6 p. iii-vi
nvt p.
 artikel
8 Covalent and localized contributions of Pr4f states at the interface of Pr2O3 to Si(001) Schmeißer, Dieter
 2004
 4-6 p. 221-226
6 p.
 artikel
9 Depletion of charge carriers in electronic polycrystalline silicon Khlyap, H.
 2004
 4-6 p. 443-445
3 p.
 artikel
10 Depth profiled porosity and microstructure evolution studied by positron annihilation and Raman spectroscopy in SiOCH low-κ films Macchi, C.
 2004
 4-6 p. 289-294
6 p.
 artikel
11 Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance Stesmans, A.
 2004
 4-6 p. 197-202
6 p.
 artikel
12 Devices architectures and materials for nanoCMOS at the end of the roadmap and beyond Deleonibus, S.
 2004
 4-6 p. 167-174
8 p.
 artikel
13 Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition Jiang, H.
 2004
 4-6 p. 237-241
5 p.
 artikel
14 Effect of pressure on surface passivation of silicon solar cell by forming gas annealing Dhungel, Suresh Kumar
 2004
 4-6 p. 427-431
5 p.
 artikel
15 Effect of Sb+ implantation on copper silicides formation and morphology after annealing of Cu/Si structures Benkerri, M.
 2004
 4-6 p. 319-324
6 p.
 artikel
16 Effects of thermal annealing on the structural properties of sputtered W–Si–N diffusion barriers Vomiero, Alberto
 2004
 4-6 p. 325-330
6 p.
 artikel
17 Electron states at the (100)Ge/HfO2 Interface Afanas’ev, V.V.
 2004
 4-6 p. 191-196
6 p.
 artikel
18 Enhanced magnetoresistance ratio and improved thermal stability of specular spin valve multilayer with capping layer Yoon, S.Y.
 2004
 4-6 p. 363-367
5 p.
 artikel
19 Expanding thermal plasma for low-k dielectrics: engineering the film chemistry by means of specific dissociation paths in the plasma Creatore, M.
 2004
 4-6 p. 283-288
6 p.
 artikel
20 Experimental evidence of Si nanocluster δ-layer formation in buried and thin SiO2 films induced by ion irradiation Röntzsch, Lars
 2004
 4-6 p. 357-362
6 p.
 artikel
21 Fabrication and optical characterization of thin two-dimensional Si3N4 waveguides Daldosso, N.
 2004
 4-6 p. 453-458
6 p.
 artikel
22 Fabrication of p-well resonant tunneling diode based on SiGe/Si and its DC-parameter extraction Xiong, Chenrong
 2004
 4-6 p. 379-382
4 p.
 artikel
23 Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain Di, Zengfeng
 2004
 4-6 p. 393-397
5 p.
 artikel
24 First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics Wenger, Ch.
 2004
 4-6 p. 227-230
4 p.
 artikel
25 Gettering by heat thermal processing: application in crystalline silicon solar cells Khedher, N.
 2004
 4-6 p. 439-442
4 p.
 artikel
26 Growth and visible photoluminescence of highly oriented (100) zinc oxide film synthesized on silicon by plasma immersion ion implantation Mei, Y.F.
 2004
 4-6 p. 459-462
4 p.
 artikel
27 Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology Pisecny, P.
 2004
 4-6 p. 231-236
6 p.
 artikel
28 Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering Barquinha, P.
 2004
 4-6 p. 243-247
5 p.
 artikel
29 Interface state energy distribution in (100)Si/HfO2 Fedorenko, Y.G.
 2004
 4-6 p. 185-189
5 p.
 artikel
30 Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier Mheen, Bongki
 2004
 4-6 p. 375-378
4 p.
 artikel
31 Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors Hekmatshoar, Bahman
 2004
 4-6 p. 419-422
4 p.
 artikel
32 Mechanical stress in PECVD a-SiC:H: aging and plasma treatments effects Jousseaume, V.
 2004
 4-6 p. 301-305
5 p.
 artikel
33 Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system Gao, L.
 2004
 4-6 p. 331-335
5 p.
 artikel
34 Microstructure investigation of Ba x Sr1− x TiO3 thin film grown on porous silicon substrate Liu, Weili
 2004
 4-6 p. 253-258
6 p.
 artikel
35 MOSFET drain current reduction under Fowler–Nordheim and channel hot carrier injection before gate oxide breakdown Gerardin, Simone
 2004
 4-6 p. 175-180
6 p.
 artikel
36 Non-volatile memory technologies: emerging concepts and new materials Bez, Roberto
 2004
 4-6 p. 349-355
7 p.
 artikel
37 Observation of dislocations in strain-relaxed silicon–germanium thin films with flat surfaces grown on ion-implanted silicon substrates Yamanaka, Junji
 2004
 4-6 p. 389-392
4 p.
 artikel
38 Optical characterization of β-FeSi2 layers formed by ion beam synthesis Ayache, R.
 2004
 4-6 p. 463-466
4 p.
 artikel
39 Photoluminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure Surma, Barbara
 2004
 4-6 p. 405-409
5 p.
 artikel
40 Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors Lysaght, Patrick S.
 2004
 4-6 p. 259-263
5 p.
 artikel
41 Polycrystalline silicon thin film made by metal-induced crystallization Kim, Do Young
 2004
 4-6 p. 433-437
5 p.
 artikel
42 Porous extreme low κ (ELκ) dielectrics using a PECVD porogen approach Favennec, L.
 2004
 4-6 p. 277-282
6 p.
 artikel
43 Preface Dąbrowski, Jarek
 2004
 4-6 p. 165-
1 p.
 artikel
44 Preparation of SrRuO3 films for advanced CMOS metal gates Fröhlich, K.
 2004
 4-6 p. 265-269
5 p.
 artikel
45 Properties of zirconium silicate thin films prepared by laser ablation Filipescu, M.
 2004
 4-6 p. 209-214
6 p.
 artikel
46 Shallow hydrogen-induced donor in monocrystalline silicon and quantum wires Abdullin, Kh.A.
 2004
 4-6 p. 447-451
5 p.
 artikel
47 Simultaneous optical measurement of Germanium content and Boron doping in strained heteroepitaxial SiGe films using a novel data-analysis technique Morris, S.J.
 2004
 4-6 p. 383-387
5 p.
 artikel
48 Sol–gel MgO thin films for insulation on SiC Bondoux, Céline
 2004
 4-6 p. 249-252
4 p.
 artikel
49 Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations Łupina, Grzegorz
 2004
 4-6 p. 215-220
6 p.
 artikel
50 Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure Rzodkiewicz, W.
 2004
 4-6 p. 399-403
5 p.
 artikel
51 Study on crystallization of amorphous silicon using CeO2 seed layer patterned on the plastic substrate Shim, Myung-suk
 2004
 4-6 p. 423-426
4 p.
 artikel
52 Subject index 2004
 4-6 p. V-VII
nvt p.
 artikel
53 Synthesis and characterization of silica microsphere-based mesoporous materials Roque-Malherbe, R.
 2004
 4-6 p. 467-469
3 p.
 artikel
54 Temperature scaling for 35nm gate length high-performance CMOS Feudel, Th.
 2004
 4-6 p. 369-374
6 p.
 artikel
55 The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique Guessasma, S.
 2004
 4-6 p. 411-417
7 p.
 artikel
56 Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure Ray, S.K.
 2004
 4-6 p. 203-208
6 p.
 artikel
57 Vibrational spectroscopy characterization of low-dielectric constant SiOC:H films prepared by PECVD technique Das, G.
 2004
 4-6 p. 295-300
6 p.
 artikel
                             57 gevonden resultaten
 
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