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                             133 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab initio modeling of defect levels in Ge clusters and supercells Coutinho, J.
 2006
 4-5 p. 477-483
7 p.
 artikel
2 Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals Sueoka, K.
 2006
 4-5 p. 494-497
4 p.
 artikel
3 Absolute band gap engineering of anisotropic square and triangular photonic crystals Rezaei, B.
 2007
 4-5 p. 159-166
8 p.
 artikel
4 A comparative study of ion implantation and irradiation-induced defects in Ge crystals Markevich, V.P.
 2006
 4-5 p. 589-596
8 p.
 artikel
5 Active control of melt convection of silicon by electromagnetic force under cusp-shaped magnetic fields Kakimoto, Koichi
 2002
 4-5 p. 341-345
5 p.
 artikel
6 A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium Opsomer, K.
 2006
 4-5 p. 554-558
5 p.
 artikel
7 A deep-level transient spectroscopy study of transition metals in n-type germanium Forment, S.
 2006
 4-5 p. 559-563
5 p.
 artikel
8 Amorphization kinetics of germanium under ion implantation Koffel, S.
 2006
 4-5 p. 664-667
4 p.
 artikel
9 Analysis of localized vibration of nitrogen complexes in CZ silicon Okubo, I
 2002
 4-5 p. 397-401
5 p.
 artikel
10 A novel bumping process for fine pitch Sn–Cu lead-free plating-based flip chip solder bumps Huang, Jung-Tang
 2007
 4-5 p. 133-142
10 p.
 artikel
11 Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth Tomzig, Erich
 2002
 4-5 p. 347-351
5 p.
 artikel
12 A roadmap towards cost efficient 300mm equipment Pfitzner, Lothar
 2002
 4-5 p. 321-331
11 p.
 artikel
13 A study of two-step growth and properties of In0.82Ga0.18As on InP Zhang, Tiemin
 2009
 4-5 p. 156-160
5 p.
 artikel
14 Atomic scale simulations of arsenic–vacancy complexes in germanium and silicon Chroneos, A.
 2006
 4-5 p. 536-540
5 p.
 artikel
15 Atomic transport in germanium and the mechanism of arsenic diffusion Bracht, Hartmut
 2006
 4-5 p. 471-476
6 p.
 artikel
16 Carrier lifetime studies in Ge using microwave and infrared light techniques Gaubas, E.
 2006
 4-5 p. 781-787
7 p.
 artikel
17 Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS Chin, Albert
 2006
 4-5 p. 711-715
5 p.
 artikel
18 Correlation of DC and AC electrical properties of Al/p-Si structure by I–V–T and C(G/ω)–V–T measurements Özdemir, Orhan
 2009
 4-5 p. 133-141
9 p.
 artikel
19 Defect imaging of SiGe strain relaxed buffers grown by LEPECVD Marchionna, S.
 2006
 4-5 p. 802-805
4 p.
 artikel
20 Defect requirements for advanced 300mm DRAM substrates Kupfer, C
 2002
 4-5 p. 381-386
6 p.
 artikel
21 Defects induced by irradiation with fast neutrons in n-type germanium Kovačević, I.
 2006
 4-5 p. 606-612
7 p.
 artikel
22 Deposition and characterization of Si-rich silicon oxide films using HMDS for integrated photonics Tomar, V.K.
 2007
 4-5 p. 200-205
6 p.
 artikel
23 Diffusion of interstitial Hydrogen molecules in Crystalline Germanium and Silicon: Quantumchemical simulation Gusakov, Vasilii
 2006
 4-5 p. 531-535
5 p.
 artikel
24 Dislocation behavior in heavily germanium-doped silicon crystal Taishi, Toshinori
 2002
 4-5 p. 409-412
4 p.
 artikel
25 Divacancy-related complexes in Si(1− x )Ge( x ) Khirunenko, L.I.
 2006
 4-5 p. 525-530
6 p.
 artikel
26 DLTS studies of irradiation-induced defects in p-type germanium Christian Petersen, M.
 2006
 4-5 p. 597-599
3 p.
 artikel
27 Doubleside polishing—a technology mandatory for 300mm wafer manufacturing Wenski, G
 2002
 4-5 p. 375-380
6 p.
 artikel
28 Effect of Ba termination layer on chemical and electrical passivation of Ge (100) surfaces Cattoni, A.
 2006
 4-5 p. 701-705
5 p.
 artikel
29 Effect of phosphotungstic acid on the properties of pulse deposited ZnSe films Murali, K.R.
 2007
 4-5 p. 155-158
4 p.
 artikel
30 Effect of vacancies on nucleation of oxide precipitates in silicon Voronkov, V.V.
 2002
 4-5 p. 387-390
4 p.
 artikel
31 Effects of defect, carrier concentration and annealing process on the photoluminescence of silicon pn diodes Yuan, Zhizhong
 2007
 4-5 p. 173-178
6 p.
 artikel
32 Effects of deposition pressure on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering Ma, Quan-Bao
 2007
 4-5 p. 167-172
6 p.
 artikel
33 Elastic, electronic and optical properties of the filled tetrahedral semiconductor α-LiCdAs Bouhemadou, A.
 2009
 4-5 p. 198-205
8 p.
 artikel
34 Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type Ge Auret, F.D.
 2006
 4-5 p. 576-579
4 p.
 artikel
35 Electrochemical pore etching in Ge Cheng, F.
 2006
 4-5 p. 694-700
7 p.
 artikel
36 Electron-beam-induced current imaging for the characterisation of structural defects in Si1− x Ge x films grown by LE-PECVD Virtuani, A.
 2006
 4-5 p. 798-801
4 p.
 artikel
37 E-MRS Spring Meeting 2002. The 300mm Silicon Era: Material, Equipment, Technology Richter, H.
 2002
 4-5 p. 311-
1 p.
 artikel
38 Energy levels of atomic hydrogen in germanium from ab-initio calculations Almeida, L.M.
 2006
 4-5 p. 503-506
4 p.
 artikel
39 Enhanced formation of oxygen-related thermal donors in Ge crystals exposed to hydrogen plasma Kazuchits, N.M.
 2006
 4-5 p. 625-628
4 p.
 artikel
40 Epitaxial growth of Ge and SiGe on Si substrates Nylandsted Larsen, Arne
 2006
 4-5 p. 454-459
6 p.
 artikel
41 Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer Zhang, Yang
 2007
 4-5 p. 194-199
6 p.
 artikel
42 1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates Srinivasan, P.
 2006
 4-5 p. 721-726
6 p.
 artikel
43 Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography Berbezier, I.
 2006
 4-5 p. 812-816
5 p.
 artikel
44 Formation and stability of germanium oxide induced by atomic oxygen exposure Molle, Alessandro
 2006
 4-5 p. 673-678
6 p.
 artikel
45 Formation energy and migration barrier of a Ge vacancy from ab initio studies Pinto, H.M.
 2006
 4-5 p. 498-502
5 p.
 artikel
46 Formation of Ge nanocrystals and SiGe in PECVD grown SiN x :Ge thin films Dana, Aykutlu
 2006
 4-5 p. 848-852
5 p.
 artikel
47 Formation of Ge nanocrystals by utilizing nanocluster source Lee, P.F.
 2006
 4-5 p. 817-822
6 p.
 artikel
48 Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn–Ag interlayer Song, June-O
 2007
 4-5 p. 211-214
4 p.
 artikel
49 Formation of Mn5Ge3 nanoclusters in highly diluted Mn x Ge1− x alloys Morresi, L.
 2006
 4-5 p. 836-840
5 p.
 artikel
50 From overall equipment efficiency (OEE) to overall Fab effectiveness (OFE) Oechsner, Richard
 2002
 4-5 p. 333-339
7 p.
 artikel
51 Future roadblocks and solutions in silicon technology as outlined by the ITRS roadmap Arden, Wolfgang
 2002
 4-5 p. 313-319
7 p.
 artikel
52 Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1− x Ge x Ulyashin, A.G.
 2006
 4-5 p. 772-776
5 p.
 artikel
53 Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behavior Chen, Jiahe
 2006
 4-5 p. 600-605
6 p.
 artikel
54 Germanium: From its discovery to SiGe devices Haller, E.E.
 2006
 4-5 p. 408-422
15 p.
 artikel
55 Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers Depuydt, Ben
 2006
 4-5 p. 437-443
7 p.
 artikel
56 Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics Wadsworth, H.J.
 2006
 4-5 p. 685-689
5 p.
 artikel
57 Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices Akatsu, Takeshi
 2006
 4-5 p. 444-448
5 p.
 artikel
58 Ge substrates made by Ge-condensation technique: Challenges and current understanding Terzieva, Valentina
 2006
 4-5 p. 449-453
5 p.
 artikel
59 Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures Rössner, Benjamin
 2006
 4-5 p. 777-780
4 p.
 artikel
60 Hydrogen in germanium Weber, J.
 2006
 4-5 p. 564-570
7 p.
 artikel
61 Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium Lauwaert, J.
 2006
 4-5 p. 571-575
5 p.
 artikel
62 Hydrogen-related shallow donors in Ge crystals implanted with protons Pokotilo, Ju.M.
 2006
 4-5 p. 629-633
5 p.
 artikel
63 IFC-ED board 2002
 4-5 p. IFC-
1 p.
 artikel
64 Impact of filtering on nanotopography measurement of 300mm silicon wafers Riedel, F
 2002
 4-5 p. 465-472
8 p.
 artikel
65 Impact of germanium surface passivation on the leakage current of shallow planar p–n junctions Satta, A.
 2006
 4-5 p. 716-720
5 p.
 artikel
66 Implantation and diffusion of phosphorous in germanium Chroneos, A.
 2006
 4-5 p. 640-643
4 p.
 artikel
67 Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses Rosiński, M.
 2006
 4-5 p. 655-658
4 p.
 artikel
68 Influence of migration anisotropy on the growth mechanism Yu, Jianguo
 2009
 4-5 p. 189-192
4 p.
 artikel
69 Influence of nucleation parameters in the spatial distribution of the Ge nanocrystals formed by LPCVD Marins, E.S.
 2006
 4-5 p. 828-831
4 p.
 artikel
70 Intentional thermal donor activation in magnetic Czochralski silicon Tuovinen, E.
 2007
 4-5 p. 179-184
6 p.
 artikel
71 Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals Markevich, V.P.
 2006
 4-5 p. 613-618
6 p.
 artikel
72 Interface characterization of high-k dielectrics on Ge substrates Misra, D.
 2006
 4-5 p. 741-748
8 p.
 artikel
73 Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements Martens, K.
 2006
 4-5 p. 749-752
4 p.
 artikel
74 Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications Lee, Y.J.
 2002
 4-5 p. 419-423
5 p.
 artikel
75 Investigation of dislocations in composition graded and strain relaxed SiGe epitaxial layer by cathodeluminescence Sumitomo, Takamichi
 2006
 4-5 p. 794-797
4 p.
 artikel
76 Ion-implantation issues in the formation of shallow junctions in germanium Simoen, E.
 2006
 4-5 p. 634-639
6 p.
 artikel
77 Iron precipitation in as-received Czochralski silicon during low temperature annealing Zeng, Yuheng
 2009
 4-5 p. 185-188
4 p.
 artikel
78 Junction temperature and reliability of high-power flip-chip light emitting diodes Chen, Z.Z.
 2007
 4-5 p. 206-210
5 p.
 artikel
79 Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(001) windows Halbwax, M.
 2006
 4-5 p. 460-464
5 p.
 artikel
80 Laser annealing for n+/p junction formation in germanium Tsouroutas, P.
 2006
 4-5 p. 644-649
6 p.
 artikel
81 Local vibrations of interstitial carbon in SiGe alloys Khirunenko, L.I.
 2006
 4-5 p. 514-519
6 p.
 artikel
82 Low-temperature Au-induced crystallization of hydrogenated amorphous Si0.5Ge0.5 thin films using Au solution Peng, Shanglong
 2007
 4-5 p. 150-154
5 p.
 artikel
83 Mechanical properties of nitrogen-doped CZ silicon crystals Orlov, V
 2002
 4-5 p. 403-407
5 p.
 artikel
84 Metals in germanium Clauws, P.
 2006
 4-5 p. 546-553
8 p.
 artikel
85 Modeling of low temperature SiGe oxidation Mane, S.S.
 2006
 4-5 p. 668-672
5 p.
 artikel
86 Modeling of the Stark effect in strained Ge0.6Si0.4/Si/Ge0.6Si0.4 resonant tunneling diodes with graded Ge x Si1− x (0.3<x<0) spacer emitter and collector Sfina, N.
 2006
 4-5 p. 737-740
4 p.
 artikel
87 Nanocalorimetric high-temperature characterization of ultrathin films of a-Ge Lopeandía, A.F.
 2006
 4-5 p. 806-811
6 p.
 artikel
88 New challenges for 300mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding Dragoi, V.
 2002
 4-5 p. 425-428
4 p.
 artikel
89 Non-collinear magnetic states of Mn5Ge3 compound Stroppa, A.
 2006
 4-5 p. 841-847
7 p.
 artikel
90 N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature Ma, Xiaobo
 2009
 4-5 p. 161-167
7 p.
 artikel
91 On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering Jelenkovic, Emil V.
 2007
 4-5 p. 143-149
7 p.
 artikel
92 On the impact of nanotopography of silicon wafers on post-CMP oxide layers Schmolke, R
 2002
 4-5 p. 413-418
6 p.
 artikel
93 Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering technique Huguenin-Love, J.L.
 2006
 4-5 p. 759-763
5 p.
 artikel
94 Optical characterization of dislocation free Ge and GeOI wafers Kalem, Seref
 2006
 4-5 p. 753-758
6 p.
 artikel
95 Optical properties of CdS nanowires prepared by dc electrochemical deposition in porous alumina template Mondal, S.P.
 2007
 4-5 p. 185-193
9 p.
 artikel
96 Optical properties of Si x Ge1− x single crystals grown by liquid phase diffusion Derin, Hüseyin
 2009
 4-5 p. 146-150
5 p.
 artikel
97 Oxide precipitates in annealed nitrogen-doped 300mm CZ-SI Akhmetov, V.D.
 2002
 4-5 p. 391-396
6 p.
 artikel
98 Oxygen loss and thermal double donor formation in germanium Litvinov, V.V.
 2006
 4-5 p. 619-624
6 p.
 artikel
99 Phase transformation of anatase–rutile crystals in doped and undoped TiO2 particles obtained by the oxidation of polycrystalline sulfide Nahar, Mst. Shamsun
 2009
 4-5 p. 168-174
7 p.
 artikel
100 Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films Christensen, J.S.
 2006
 4-5 p. 650-654
5 p.
 artikel
101 Photoelastic stress evaluation and defect monitoring in 300-mm-wafer manufacturing Geiler, H.D
 2002
 4-5 p. 445-455
11 p.
 artikel
102 Physical failure analysis in semiconductor industry—challenges of the copper interconnect process Zschech, Ehrenfried
 2002
 4-5 p. 457-464
8 p.
 artikel
103 Point defects in germanium: Reliable and questionable data in radiation experiments Emtsev, Vadim
 2006
 4-5 p. 580-588
9 p.
 artikel
104 Positron probing of point V-group impurity-vacancy complexes in γ-irradiated germanium Arutyunov, N.Yu.
 2006
 4-5 p. 788-793
6 p.
 artikel
105 Praseodymium oxide growth on Si(100) by pulsed-laser deposition Wolfframm, D.
 2002
 4-5 p. 429-434
6 p.
 artikel
106 Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection Kalaev, V.V.
 2002
 4-5 p. 369-373
5 p.
 artikel
107 Preface Claeys, Cor
 2006
 4-5 p. 407-
1 p.
 artikel
108 Radiation damage in electron-irradiated strained Si n-MOSFETs Takakura, K.
 2006
 4-5 p. 732-736
5 p.
 artikel
109 Recombination activity of nickel in nitrogen-doped Czochralski silicon treated by rapid thermal processing Wang, Weiyan
 2007
 4-5 p. 222-226
5 p.
 artikel
110 Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates Wietler, Tobias F.
 2006
 4-5 p. 659-663
5 p.
 artikel
111 Silicon melt convection in large size Czochralski crucibles Virbulis, J.
 2002
 4-5 p. 353-359
7 p.
 artikel
112 Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth Śpiewak, P.
 2006
 4-5 p. 465-470
6 p.
 artikel
113 Space charge limited currents and traps distribution in Ag–As–Te thin films glasses Mahmoud Saad, Hussein
 2009
 4-5 p. 193-197
5 p.
 artikel
114 Spectroscopy of electron states at interfaces of (100)Ge with high-κ insulators Afanas’ev, V.V.
 2006
 4-5 p. 764-771
8 p.
 artikel
115 Spontaneous Ge island ordering promoted by partial silicon capping De Seta, M.
 2006
 4-5 p. 823-827
5 p.
 artikel
116 Stability of Cu/Ir/Si trilayer structure to moderate annealing Leu, L.C.
 2009
 4-5 p. 151-155
5 p.
 artikel
117 Strain and lattice engineering for Ge FET devices Bedell, S.W.
 2006
 4-5 p. 423-436
14 p.
 artikel
118 Strain-induced shift of phonon modes in Si 1 - x Ge x alloys Pezzoli, F.
 2006
 4-5 p. 541-545
5 p.
 artikel
119 Structural and magnetic properties of GeMn diluted magnetic semiconductor Ayoub, J.-P.
 2006
 4-5 p. 832-835
4 p.
 artikel
120 Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1− x Ge x ) deposited by DC magnetron sputtering at high rate Fedala, A.
 2006
 4-5 p. 690-693
4 p.
 artikel
121 Studies of the VO centre in Ge using first principles cluster calculations Carvalho, A.
 2006
 4-5 p. 489-493
5 p.
 artikel
122 Study of minority carrier injection phenomenon on Schottky and plasma deposited p–n junction diodes Özdemir, Orhan
 2009
 4-5 p. 175-184
10 p.
 artikel
123 Sulfur passivation of Ge (001) surfaces and its effects on Schottky barrier contact Maeda, Tatsuro
 2006
 4-5 p. 706-710
5 p.
 artikel
124 Supercell and cluster density functional calculations of the thermal stability of the divacancy in germanium Janke, C.
 2006
 4-5 p. 484-488
5 p.
 artikel
125 Systematic study of the influence of the Czochralski hot zone design on the point defect distribution with respect to a “perfect” crystal Krause, M
 2002
 4-5 p. 361-367
7 p.
 artikel
126 The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates Lukyanchikova, N.
 2006
 4-5 p. 727-731
5 p.
 artikel
127 The effect of compressive biaxial stress on vacancy clustering in thin Si–Ge layers Ganchenkova, M.G.
 2006
 4-5 p. 507-513
7 p.
 artikel
128 The influence of post-growth annealing on optical and electrical properties of p-type ZnO films Zhang, C.Y.
 2007
 4-5 p. 215-221
7 p.
 artikel
129 Thermoelectric properties of Si–Ge whiskers Druzhinin, Anatolij
 2006
 4-5 p. 853-857
5 p.
 artikel
130 Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality Leys, F.E.
 2006
 4-5 p. 679-684
6 p.
 artikel
131 Ultrasound-assisted synthesis of ZnO semiconductor nanostructures Azizian-Kalandaragh, Yashar
 2009
 4-5 p. 142-145
4 p.
 artikel
132 Vacancy-dioxygen centers in Si-rich SiGe alloys Khirunenko, L.I.
 2006
 4-5 p. 520-524
5 p.
 artikel
133 X-ray characterization of crystal perfection and surface contamination in large-diameter silicon wafers Kawado, Seiji
 2002
 4-5 p. 435-444
10 p.
 artikel
                             133 gevonden resultaten
 
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