| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Changing from rapid thermal processing to rapid photothermal processing: what does it buy for a particular technology?
|
Singh, R.
|
|
1998
|
|
3-4 |
p. 219-230
12 p.
|
artikel
|
| 2 |
Comparative studies on energy-dependence of reduced effective mass in quantum confined ZnS semiconductor nanocrystals prepared in polymer matrix
|
Kolahi, Sanaz
|
|
2011
|
|
3-4 |
p. 294-301
8 p.
|
artikel
|
| 3 |
Controllable silicon nano-grass formation using a hydrogenation assisted deep reactive ion etching
|
Mehran, M.
|
|
2011
|
|
3-4 |
p. 199-206
8 p.
|
artikel
|
| 4 |
Correlation between solar cell efficiency and minority carrier lifetime for batch processed multicrystalline Si wafers
|
Jayakrishnan, R.
|
|
2011
|
|
3-4 |
p. 223-228
6 p.
|
artikel
|
| 5 |
Coupled simulation of gas flow and heat transfer in an RTP-system with rotating wafer
|
Poscher, S.
|
|
1998
|
|
3-4 |
p. 201-205
5 p.
|
artikel
|
| 6 |
Deposition and crystallization of a-Si thin films by rapid thermal processing
|
Girginoudi, S
|
|
1998
|
|
3-4 |
p. 287-292
6 p.
|
artikel
|
| 7 |
3D flowerlike ZnO micro-nanostructures via site-specific second nucleation in the zinc–ethylenediamine–hexamethylenetetramine tertiary system
|
Yang, Lejiao
|
|
2011
|
|
3-4 |
p. 193-198
6 p.
|
artikel
|
| 8 |
Dopant diffusion studies and free carrier lifetimes during rapid thermal processing of semiconductors
|
Nagabushnam, Rajan V.
|
|
1998
|
|
3-4 |
p. 207-218
12 p.
|
artikel
|
| 9 |
Dry etching of magnetic tunnel junctions monitored by spectroscopic reflectance
|
Oubensaid, E.H.
|
|
2011
|
|
3-4 |
p. 278-286
9 p.
|
artikel
|
| 10 |
Editorial
|
|
|
1998
|
|
3-4 |
p. 167-
1 p.
|
artikel
|
| 11 |
Effect of K–N on the structural and optical properties of K–N co-doped ZnO film
|
Zhao, Yue
|
|
2011
|
|
3-4 |
p. 257-260
4 p.
|
artikel
|
| 12 |
Effect of stress on silicide formation kinetics in thin film titanium–selicon system
|
Nagabushnam, Rajan V
|
|
1998
|
|
3-4 |
p. 249-255
7 p.
|
artikel
|
| 13 |
Electron-beam assisted physical vapor deposition of polycrystalline silicon films
|
Jamil, Sheba
|
|
2011
|
|
3-4 |
p. 287-293
7 p.
|
artikel
|
| 14 |
Epitaxial growth of SiGe layers for BiCMOS applications
|
Regolini, J.L.
|
|
1998
|
|
3-4 |
p. 317-323
7 p.
|
artikel
|
| 15 |
Formation of contacts to shallow junctions using titanium silicide with diffusion barriers
|
Zagozdzon-Wosik, W
|
|
1998
|
|
3-4 |
p. 243-247
5 p.
|
artikel
|
| 16 |
Formation of Si wells and pyramids on (100) surface as a result of Zn–Si interaction
|
Wu, Yue
|
|
2011
|
|
3-4 |
p. 302-305
4 p.
|
artikel
|
| 17 |
Growth and physical properties of in situ phosphorus-doped RTLPCVD polycrystalline silicon thin films
|
Kallel, S
|
|
1998
|
|
3-4 |
p. 299-302
4 p.
|
artikel
|
| 18 |
Influence of vapor phase pre-oxide-cleaning on the oxidation characteristics
|
Froeschle, B
|
|
1998
|
|
3-4 |
p. 271-274
4 p.
|
artikel
|
| 19 |
Investigation of BiFe0.95Mn0.03Zn0.02O3/Bi3.15Nd0.85Ti2.9Zr0.1O12 heterostructure thin film fabricated by a chemical solution deposition technique
|
Chen, Changchun
|
|
2011
|
|
3-4 |
p. 253-256
4 p.
|
artikel
|
| 20 |
Investigation of nano patches in Ni/n-Si micro Schottky diodes with new aspect
|
Yeganeh, M.
|
|
2011
|
|
3-4 |
p. 266-273
8 p.
|
artikel
|
| 21 |
Modelling and off-line optimization of a 300 mm rapid thermal processing system
|
Tillmann, A
|
|
1998
|
|
3-4 |
p. 181-186
6 p.
|
artikel
|
| 22 |
New methods of metrology data analysis during semiconductor processing and application to rapid thermal processing
|
Boin, Manuela
|
|
1998
|
|
3-4 |
p. 195-200
6 p.
|
artikel
|
| 23 |
Patent report
|
|
|
1998
|
|
3-4 |
p. 343-350
8 p.
|
artikel
|
| 24 |
Perspectives on emissivity measurements and modeling in silicon
|
Abedrabbo, S.
|
|
1998
|
|
3-4 |
p. 187-193
7 p.
|
artikel
|
| 25 |
Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing
|
Mathiot, D.
|
|
1998
|
|
3-4 |
p. 231-236
6 p.
|
artikel
|
| 26 |
Photoresponse and electrical characterization of photodiode based nanofibers ZnO and Si
|
Yakuphanoglu, Fahrettin
|
|
2011
|
|
3-4 |
p. 207-211
5 p.
|
artikel
|
| 27 |
Rapid thermal annealing applied to the optimization of titanium oxide arc
|
Lemiti, M.
|
|
1998
|
|
3-4 |
p. 331-334
4 p.
|
artikel
|
| 28 |
Rapid thermal annealing of Zr/SiGeC contacts
|
Barthula, M
|
|
1998
|
|
3-4 |
p. 263-266
4 p.
|
artikel
|
| 29 |
Rapid thermal magnetic annealing as an emerging technology in field-annealing of thin magnetic films for recording heads
|
Roozeboom, F.
|
|
1998
|
|
3-4 |
p. 303-315
13 p.
|
artikel
|
| 30 |
Rapid thermal oxidation of highly in situ phosphorus doped polysilicon thin films
|
Kallel, S
|
|
1998
|
|
3-4 |
p. 275-279
5 p.
|
artikel
|
| 31 |
Rapid thermal oxidation of porous silicon for surface passivation
|
Debarge, L
|
|
1998
|
|
3-4 |
p. 281-285
5 p.
|
artikel
|
| 32 |
Rapid thermal processing technology for the 21st century
|
Timans, P.J.
|
|
1998
|
|
3-4 |
p. 169-179
11 p.
|
artikel
|
| 33 |
Selective doping of silicon by rapid thermal and laser assisted processes
|
Besi-Vetrella, U
|
|
1998
|
|
3-4 |
p. 325-329
5 p.
|
artikel
|
| 34 |
Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1−x Ge x /Si heterostructure
|
Miron, Y
|
|
1998
|
|
3-4 |
p. 257-261
5 p.
|
artikel
|
| 35 |
Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray
|
Zebbar, N.
|
|
2011
|
|
3-4 |
p. 229-234
6 p.
|
artikel
|
| 36 |
Studying of physical characteristics and optimizing of gap filling for tungsten
|
Chen, C.C.
|
|
2011
|
|
3-4 |
p. 235-240
6 p.
|
artikel
|
| 37 |
Studying the Raman spectra of Ag doped ZnO films grown by PLD
|
Wang, L.N.
|
|
2011
|
|
3-4 |
p. 274-277
4 p.
|
artikel
|
| 38 |
Study of grains size distribution and electrical activity of heavily boron doped polysilicon thin films
|
Bouridah, Hachemi
|
|
2011
|
|
3-4 |
p. 261-265
5 p.
|
artikel
|
| 39 |
Study of high-density AZO ceramic target
|
Zhang, Jing
|
|
2011
|
|
3-4 |
p. 189-192
4 p.
|
artikel
|
| 40 |
Synthesis and characterization of Bi2Te3/polyaniline composites
|
Li, Yong
|
|
2011
|
|
3-4 |
p. 219-222
4 p.
|
artikel
|
| 41 |
Synthesis and optical properties of Eu-doped ZnO nanosheets by hydrothermal method
|
Yang, Jinghai
|
|
2011
|
|
3-4 |
p. 247-252
6 p.
|
artikel
|
| 42 |
Template-free synthesis of CuSCN and Cu2S crystallites with a facile hydrothermal method at different temperatures
|
Li, Jiajia
|
|
2011
|
|
3-4 |
p. 306-310
5 p.
|
artikel
|
| 43 |
The effect of thickness of organic layer on electronic properties of Al/Rhodamine B/p-Si structure
|
Soylu, Murat
|
|
2011
|
|
3-4 |
p. 212-218
7 p.
|
artikel
|
| 44 |
The growth and optical property of ZnO rods evolved from layered basic zinc acetate in humid atmosphere
|
Qu, Xiurong
|
|
2011
|
|
3-4 |
p. 241-246
6 p.
|
artikel
|
| 45 |
The initial stages of Si thin deposits on foreign substrates in a rapid thermal chemical vapor phase reactor
|
Angermeier, D.
|
|
1998
|
|
3-4 |
p. 293-297
5 p.
|
artikel
|
| 46 |
Ultra high temperature rapid thermal annealing of GaN
|
Cao, X.A
|
|
1998
|
|
3-4 |
p. 267-270
4 p.
|
artikel
|
| 47 |
Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate
|
Agarwal, Aditya
|
|
1998
|
|
3-4 |
p. 237-241
5 p.
|
artikel
|
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