| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced materials for microelectronics: ferroelectric and low-k dielectrics
|
Fragalà, I.
|
|
2002
|
|
2-3 |
p. 63-
1 p.
|
artikel
|
| 2 |
Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition
|
Takenaka, Kosuke
|
|
2002
|
|
2-3 |
p. 301-304
4 p.
|
artikel
|
| 3 |
Applications and issues for ferroelectric NVMs
|
Zambrano, Raffaele
|
|
2002
|
|
2-3 |
p. 305-310
6 p.
|
artikel
|
| 4 |
Ba0.7Sr0.3TiO3 powders with B2O3 additive prepared by the sol–gel method for use as microwave material
|
Hu, T.
|
|
2002
|
|
2-3 |
p. 215-221
7 p.
|
artikel
|
| 5 |
CARL–advantages of thin-film imaging for leading-edge lithography
|
Richter, E.
|
|
2002
|
|
2-3 |
p. 291-299
9 p.
|
artikel
|
| 6 |
Characterization of low-k porous silica films incorporated with alkylene groups
|
Uchida, Y.
|
|
2002
|
|
2-3 |
p. 259-264
6 p.
|
artikel
|
| 7 |
Characterization of pulsed laser deposited Ba0.6Sr0.4TiO3 on Pt-coated silicon substrates
|
Goux, L
|
|
2002
|
|
2-3 |
p. 189-194
6 p.
|
artikel
|
| 8 |
Chemical solution deposition of PZT thin films for microelectronics
|
Kosec, M
|
|
2002
|
|
2-3 |
p. 97-103
7 p.
|
artikel
|
| 9 |
Control of the Ti diffusion in Pt/Ti bottom electrodes for the fabrication of PZT thin film transducers
|
Millon, C.
|
|
2002
|
|
2-3 |
p. 243-247
5 p.
|
artikel
|
| 10 |
Effect of grain size on the electrical properties of (Pb0.72La0.28)Ti0.93O3 thin films grown by pulsed laser deposition
|
Han, Kyoung Bo
|
|
2002
|
|
2-3 |
p. 249-252
4 p.
|
artikel
|
| 11 |
Effect of substitution of Ti by Zr in BaTiO3 thin films grown by MOCVD
|
Pantou, R
|
|
2002
|
|
2-3 |
p. 237-241
5 p.
|
artikel
|
| 12 |
Effect of substrates on epitaxial PZT films by a coating photolysis process
|
Tsuchiya, T
|
|
2002
|
|
2-3 |
p. 207-210
4 p.
|
artikel
|
| 13 |
Effects of thermal annealing on In-induced metastable defects in InGaN films
|
Hung, H.
|
|
2007
|
|
2-3 |
p. 112-116
5 p.
|
artikel
|
| 14 |
Electrical properties of low-dielectric-constant films prepared by PECVD in O2/CH4/HMDSO
|
Borvon, G
|
|
2002
|
|
2-3 |
p. 279-284
6 p.
|
artikel
|
| 15 |
Evidence for PT-ferroelectrics interface scenario of different fatigue behaviors between Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin film capacitors
|
Chu, M.W.
|
|
2002
|
|
2-3 |
p. 179-182
4 p.
|
artikel
|
| 16 |
Fabrication and characterization of PZT-PMWSN thin film using pulsed laser deposition
|
Kim, Cheol Su
|
|
2002
|
|
2-3 |
p. 93-96
4 p.
|
artikel
|
| 17 |
Ferroelectric thin and thick films for microsystems
|
Whatmore, R.W.
|
|
2002
|
|
2-3 |
p. 65-76
12 p.
|
artikel
|
| 18 |
First-principles calculations of perovskite thin films
|
Eglitis, R.I.
|
|
2002
|
|
2-3 |
p. 129-134
6 p.
|
artikel
|
| 19 |
Fundamentals in ferroelectric transition of TGS
|
Alexandru, H.V.
|
|
2002
|
|
2-3 |
p. 159-165
7 p.
|
artikel
|
| 20 |
High dielectric constant TiO2 film grown on polysilicon by liquid phase deposition
|
Lee, Ming-Kwei
|
|
2007
|
|
2-3 |
p. 61-67
7 p.
|
artikel
|
| 21 |
Homogeneous and heterogeneous reactions in the decomposition of precursors for the MOCVD of high-k and ferroelectric films
|
Condorelli, G.G.
|
|
2002
|
|
2-3 |
p. 135-139
5 p.
|
artikel
|
| 22 |
IFC-ED board
|
|
|
2002
|
|
2-3 |
p. IFC-
1 p.
|
artikel
|
| 23 |
Influence of growth parameters on properties of electroceramic thin films grown via MO-CVD
|
Padeletti, G.
|
|
2002
|
|
2-3 |
p. 105-114
10 p.
|
artikel
|
| 24 |
Integration of high dielectric Ba0.5Sr0.5TiO3 films into amorphous TaSiN barrier layer structures
|
Wenger, Ch.
|
|
2002
|
|
2-3 |
p. 233-236
4 p.
|
artikel
|
| 25 |
Large-scale modelling of the phase transitions in KTa1−x Nb x O3 perovskite solid solutions
|
Eglitis, R.I.
|
|
2002
|
|
2-3 |
p. 153-157
5 p.
|
artikel
|
| 26 |
Low-temperature growth of RuO2 films for conductive electrode applications
|
Fröhlich, K.
|
|
2002
|
|
2-3 |
p. 173-177
5 p.
|
artikel
|
| 27 |
Low temperature preparation of piezoelectric thin films by ultraviolet-assisted rapid thermal processing
|
Pardo, L.
|
|
2002
|
|
2-3 |
p. 77-83
7 p.
|
artikel
|
| 28 |
MOCVD for complex multicomponent thin films—a leading edge technology for next generation devices
|
Schumacher, M.
|
|
2002
|
|
2-3 |
p. 85-91
7 p.
|
artikel
|
| 29 |
Non-destructive characterization of strontium bismuth tantalate films
|
Petrik, P
|
|
2002
|
|
2-3 |
p. 141-145
5 p.
|
artikel
|
| 30 |
Novel growth of ZnO micro-rod arrays using hydrophobically micropatterned surfaces
|
Shao, Huafeng
|
|
2007
|
|
2-3 |
p. 68-76
9 p.
|
artikel
|
| 31 |
Optoelectronic properties of ZnSe thin films
|
Venkatachalam, S.
|
|
2007
|
|
2-3 |
p. 128-132
5 p.
|
artikel
|
| 32 |
Peculiarities of Ga 2 Te 3 thermal oxidation
|
Balitskii, O.A.
|
|
2007
|
|
2-3 |
p. 124-127
4 p.
|
artikel
|
| 33 |
Phase transformation and paired-plate precipitate formation in Pb0.91La0.09Zr0.65Ti0.35O3 films grown on sapphire substrates
|
Tunaboylu, B.
|
|
2002
|
|
2-3 |
p. 199-206
8 p.
|
artikel
|
| 34 |
Piezoelectric and electrical properties of PZT-PSN thin film ceramics for MEMS applications
|
Kim, Seong Kon
|
|
2002
|
|
2-3 |
p. 115-121
7 p.
|
artikel
|
| 35 |
Piezoelectric properties of sputtered PZT films: influence of structure, micro structure, film thickness (Zr,Ti) ratio and Nb substitution
|
Remiens, D.
|
|
2002
|
|
2-3 |
p. 123-127
5 p.
|
artikel
|
| 36 |
Positive temperature coefficient of resistivity in thin films of barium titanate
|
Syrtsov, S.R.
|
|
2002
|
|
2-3 |
p. 223-225
3 p.
|
artikel
|
| 37 |
Precursor mutual interactions in the kinetics of MOCVD of SBT films
|
Condorelli, G.G.
|
|
2002
|
|
2-3 |
p. 167-171
5 p.
|
artikel
|
| 38 |
Preparation and photocatalytic performance of Ag/ZnO nano-composites
|
Zhou, Guang
|
|
2007
|
|
2-3 |
p. 90-96
7 p.
|
artikel
|
| 39 |
Properties of ZrO2 thin films prepared by laser ablation
|
Vrejoiu, I.
|
|
2002
|
|
2-3 |
p. 253-257
5 p.
|
artikel
|
| 40 |
PTFE nanoemulsions as ultralow-k dielectric materials
|
Machetta, P.
|
|
2002
|
|
2-3 |
p. 285-290
6 p.
|
artikel
|
| 41 |
Publisher's Note
|
|
|
2002
|
|
2-3 |
p. vii-
1 p.
|
artikel
|
| 42 |
Pulsed laser deposition of PMN thin films
|
Craciun, F.
|
|
2002
|
|
2-3 |
p. 227-232
6 p.
|
artikel
|
| 43 |
Raman scattering and cathodoluminescence properties of flower-like manganese doped ZnO nanorods
|
Shuang, D.
|
|
2007
|
|
2-3 |
p. 97-102
6 p.
|
artikel
|
| 44 |
Routes for the integration of high and low dielectric constant oxides on InP
|
Vasco, E.
|
|
2002
|
|
2-3 |
p. 183-187
5 p.
|
artikel
|
| 45 |
Some physical properties of chemically sprayed Zn1− x Cd x S semiconductor films
|
Akyuz, Idris
|
|
2007
|
|
2-3 |
p. 103-111
9 p.
|
artikel
|
| 46 |
Strategies for ultralow-κ dielectrics for integrated-circuit interconnects
|
Cerofolini, G.F.
|
|
2002
|
|
2-3 |
p. 265-270
6 p.
|
artikel
|
| 47 |
Structural changes of fluorinated amorphous carbon films by nitrogen incorporation
|
Valentini, L.
|
|
2002
|
|
2-3 |
p. 271-277
7 p.
|
artikel
|
| 48 |
Structure of BaTiO3 thin films modified by film–substrate interaction
|
Nair, Jaya P.
|
|
2002
|
|
2-3 |
p. 195-197
3 p.
|
artikel
|
| 49 |
Study of thermal conversion and patterning of a new soluble poly (p-phenylenevinylene) (PPV) precursor
|
Prelipceanu, Marius
|
|
2007
|
|
2-3 |
p. 77-89
13 p.
|
artikel
|
| 50 |
The effect of annealing on the 0.5% Ce-doped Ba(Zr x Ti1−x )O3 (BZT) thin films deposited by RF magnetron sputtering system
|
Choi, Won Seok
|
|
2002
|
|
2-3 |
p. 211-214
4 p.
|
artikel
|
| 51 |
The effects of baking cycles on the properties of ferroelectric thin films
|
Watts, B.E
|
|
2002
|
|
2-3 |
p. 147-152
6 p.
|
artikel
|
| 52 |
Thermal, magnetic and impedance properties of Li2M2+P2O7 (M2+=Fe and Ni) single crystals
|
Mahesh, M.J.
|
|
2007
|
|
2-3 |
p. 117-123
7 p.
|
artikel
|
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