| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aggregation of interstitial copper atoms in silicon
|
Lowther, J.E.
|
|
2010
|
|
1 |
p. 29-33
5 p.
|
artikel
|
| 2 |
Al speed fill
|
Beyer, Gerald P
|
|
1999
|
|
1 |
p. 75-85
11 p.
|
artikel
|
| 3 |
Analysis of LPCVD process conditions for the deposition of low stress silicon nitride. Part I: preliminary LPCVD experiments
|
Olson, James M
|
|
2002
|
|
1 |
p. 51-60
10 p.
|
artikel
|
| 4 |
A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer
|
Jia, Hujun
|
|
2012
|
|
1 |
p. 2-5
4 p.
|
artikel
|
| 5 |
A study of the role of HBr and oxygen on the etch selectivity and the post-etch profile in a polysilicon/oxide etch using HBr/O2 based high density plasma for advanced DRAMs
|
Kim, Deok-kee
|
|
2007
|
|
1 |
p. 41-48
8 p.
|
artikel
|
| 6 |
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon
|
Privitera, V
|
|
1999
|
|
1 |
p. 35-44
10 p.
|
artikel
|
| 7 |
Bias voltage controlled photoluminescence from β-In2S3 thin films
|
Jayakrishnan, R.
|
|
2011
|
|
1 |
p. 58-61
4 p.
|
artikel
|
| 8 |
Blue emission of ZnO nanoporous arrays membrane prepared by novel catalysis-free vertical pulsed-laser ablation
|
Niu, Haijun
|
|
2011
|
|
1 |
p. 37-42
6 p.
|
artikel
|
| 9 |
Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)
|
Lu, Jinggang
|
|
2008
|
|
1 |
p. 20-24
5 p.
|
artikel
|
| 10 |
Characteristics of CdS films brush electrodeposited on low-temperature substrates
|
Murali, K.R.
|
|
2007
|
|
1 |
p. 56-60
5 p.
|
artikel
|
| 11 |
Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation
|
Okamoto, Naoya
|
|
1999
|
|
1 |
p. 13-18
6 p.
|
artikel
|
| 12 |
Characterization of TiAl alloy films for potential application in MEMS bimorph actuators
|
Qu, X.X
|
|
2002
|
|
1 |
p. 35-38
4 p.
|
artikel
|
| 13 |
Cluster ion beam processing
|
Yamada, Isao
|
|
1998
|
|
1 |
p. 27-41
15 p.
|
artikel
|
| 14 |
Colour sensor for (bio)chemical/biological discrimination and detection
|
Poenar, Daniel Puiu
|
|
2002
|
|
1 |
p. 17-22
6 p.
|
artikel
|
| 15 |
Constant current stress of lightly Al-doped Ta2O5
|
Atanassova, E.
|
|
2012
|
|
1 |
p. 98-107
10 p.
|
artikel
|
| 16 |
Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon
|
Agarwal, Aditya
|
|
1998
|
|
1 |
p. 17-25
9 p.
|
artikel
|
| 17 |
Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts
|
Ejderha, K.
|
|
2011
|
|
1 |
p. 5-12
8 p.
|
artikel
|
| 18 |
Detection of H2S, SO2, and NO2 using electrostatic sprayed tungsten oxide films
|
Matei Ghimbeu, Camelia
|
|
2010
|
|
1 |
p. 1-8
8 p.
|
artikel
|
| 19 |
Direct thermal decomposition synthesis and characterization of hematite (α-Fe2O3) nanoparticles
|
Darezereshki, Esmaeel
|
|
2012
|
|
1 |
p. 91-97
7 p.
|
artikel
|
| 20 |
Editorial
|
Hepp, Aloysius F.
|
|
2012
|
|
1 |
p. 1-
1 p.
|
artikel
|
| 21 |
Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target
|
Shin, Beom-Ki
|
|
2011
|
|
1 |
p. 23-27
5 p.
|
artikel
|
| 22 |
Effect of extended phosphorus diffusion gettering on chromium impurity in HEM multicrystalline silicon
|
Khelifati, Nabil
|
|
2012
|
|
1 |
p. 56-60
5 p.
|
artikel
|
| 23 |
Effect of hydrogen peroxide treatment on the electrical characteristics of Au/ZnO epitaxial Schottky diode
|
Singh, C.S.
|
|
2011
|
|
1 |
p. 1-4
4 p.
|
artikel
|
| 24 |
Effect of KOH treatment on the Schottky barrier inhomogeneity in Ni/n-GaN
|
Kim, Hogyoung
|
|
2010
|
|
1 |
p. 51-55
5 p.
|
artikel
|
| 25 |
Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate
|
Kurniawan, Tedi
|
|
2011
|
|
1 |
p. 13-17
5 p.
|
artikel
|
| 26 |
Effects of surfactants on microstructure and photocatalytic activity of TiO2 nanoparticles prepared by the hydrothermal method
|
Chen, Ke
|
|
2012
|
|
1 |
p. 20-26
7 p.
|
artikel
|
| 27 |
Effects of the post nitridation anneal temperature on performances of the nano MOSFET with ultra-thin (<2.5nm) plasma nitrided gate dielectric
|
Chiu, H.Y.
|
|
2012
|
|
1 |
p. 27-31
5 p.
|
artikel
|
| 28 |
Electrical and thermal stability of Ag ohmic contacts for GaN-based flip-chip light-emitting diodes by using an AgAl alloy capping layer
|
Hwang, Yoon Tae
|
|
2007
|
|
1 |
p. 14-18
5 p.
|
artikel
|
| 29 |
Electroless copper deposition solution induced chemical changes in low-k fluorinated dielectrics
|
Hsu, D.T.
|
|
1999
|
|
1 |
p. 19-22
4 p.
|
artikel
|
| 30 |
Enhanced electrochromic performance of nanoporous NiO films
|
Purushothaman, K.K.
|
|
2011
|
|
1 |
p. 78-83
6 p.
|
artikel
|
| 31 |
Enhancement and stability of luminescence in thin-film light-emitting devices based on heterostructure of ladder-type poly (p-phenylene)
|
Wang, S.X.
|
|
2002
|
|
1 |
p. 27-30
4 p.
|
artikel
|
| 32 |
Facile synthesis of monodispersed nanocrystalline anatase TiO2 particles with large surface area and enhanced photocatalytic activity for degradation of organic contaminant in wastewaters
|
Jiang, Liming
|
|
2012
|
|
1 |
p. 108-111
4 p.
|
artikel
|
| 33 |
Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures
|
Gökçen, M.
|
|
2012
|
|
1 |
p. 41-46
6 p.
|
artikel
|
| 34 |
GaN-based LEDs with Ar plasma treatment
|
Kuo, D.S.
|
|
2012
|
|
1 |
p. 52-55
4 p.
|
artikel
|
| 35 |
Growth of ITO thin films on polyimide substrate by bias sputtering
|
Nisha, M.
|
|
2010
|
|
1 |
p. 64-69
6 p.
|
artikel
|
| 36 |
Hall and photoluminescence studies of effects of the thickness of an additional In0.3Ga0.7As layer in the center of In0.15Ga0.85As/Al0.25Ga0.75As/GaAs high electron mobility transistors
|
Zhao, Feng
|
|
2002
|
|
1 |
p. 23-26
4 p.
|
artikel
|
| 37 |
High-resolution transmission electron microscopy study on bipolar resistive switching behavior in TiO2 thin films
|
Li, Ying
|
|
2012
|
|
1 |
p. 37-40
4 p.
|
artikel
|
| 38 |
IFC-ED board
|
|
|
2002
|
|
1 |
p. IFC-
1 p.
|
artikel
|
| 39 |
Improvement of performance of dye-sensitized solar cells by doping Er2O3 into TiO2 electrodes
|
Li, Feitao
|
|
2012
|
|
1 |
p. 11-14
4 p.
|
artikel
|
| 40 |
Improvement of photon extraction efficiency of InGaN LEDs utilizing textured ZnO layer deposited by electrospray deposition
|
Chao, Liang-Chiun
|
|
2008
|
|
1 |
p. 13-15
3 p.
|
artikel
|
| 41 |
Incidence angle distributions of ions bombarding grounded surfaces in high density plasma reactors
|
Aydil, E.S
|
|
1998
|
|
1 |
p. 75-82
8 p.
|
artikel
|
| 42 |
Inductively coupled plasma etching of III–V semiconductors in Cl2-based chemistries
|
Lee, J.W
|
|
1998
|
|
1 |
p. 65-73
9 p.
|
artikel
|
| 43 |
Inductively coupled plasma reactive ion etching of sapphire using C2F6- and NF3-based gas mixtures
|
Kang, Dong-Jin
|
|
2008
|
|
1 |
p. 16-19
4 p.
|
artikel
|
| 44 |
Influence of grain size on the properties of AlN doped ZnO thin film
|
Bhuvana, K.P.
|
|
2011
|
|
1 |
p. 84-88
5 p.
|
artikel
|
| 45 |
Influence of Mn doping on the microstructure and optical property of ZnO
|
Senthilkumaar, S.
|
|
2008
|
|
1 |
p. 6-12
7 p.
|
artikel
|
| 46 |
Interaction of ion-implantation-induced interstitials in B-doped SiGe
|
Crosby, R.T.
|
|
2007
|
|
1 |
p. 1-5
5 p.
|
artikel
|
| 47 |
Interstitial diffusion under conditions of trapping of interstitial impurity atoms
|
Velichko, O.I.
|
|
2010
|
|
1 |
p. 13-20
8 p.
|
artikel
|
| 48 |
Investigation of the antibacterial and photocatalytic properties of the zeolitic nanosized AgBr/TiO2 composites
|
Padervand, Mohsen
|
|
2012
|
|
1 |
p. 73-79
7 p.
|
artikel
|
| 49 |
Investigations on the structural and optical properties of Li, N and (Li, N) co-doped ZnO thin films prepared by sol–gel technique
|
Ravichandran, C.
|
|
2010
|
|
1 |
p. 46-50
5 p.
|
artikel
|
| 50 |
Journal select April 19, 2002
|
|
|
2002
|
|
1 |
p. I-
1 p.
|
artikel
|
| 51 |
Magneto-optical characteristics of Mn-doped ZnO films deposited by ultrasonic spray pyrolysis
|
Chen, Lung-Chien
|
|
2012
|
|
1 |
p. 80-85
6 p.
|
artikel
|
| 52 |
Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses
|
Kim, Hyo June
|
|
2010
|
|
1 |
p. 9-12
4 p.
|
artikel
|
| 53 |
Microstructural and electrical property evolution in an acceptor-dopant free positive temperature coefficient thermistor
|
Leach, C.
|
|
2012
|
|
1 |
p. 47-51
5 p.
|
artikel
|
| 54 |
Morphological and size effects of NiO nanoparticles via solvothermal process and their optical properties
|
Anandan, K.
|
|
2011
|
|
1 |
p. 43-47
5 p.
|
artikel
|
| 55 |
Nanotechnology copper interconnect processes integrations for high aspect ratio without middle etching stop layer
|
Weng, Chun-Jen
|
|
2010
|
|
1 |
p. 56-63
8 p.
|
artikel
|
| 56 |
Neural network modeling of PECVD silicon nitride films
|
Ghosh, S.
|
|
1999
|
|
1 |
p. 1-11
11 p.
|
artikel
|
| 57 |
New two-dimensional dopant delineation techniques for sub-micron device characterization
|
Spinella, Corrado
|
|
1998
|
|
1 |
p. 55-64
10 p.
|
artikel
|
| 58 |
Optical and electrical properties of ZnO:Al thin films synthesized by low-pressure pulsed laser deposition
|
Gu, X.Q.
|
|
2011
|
|
1 |
p. 48-51
4 p.
|
artikel
|
| 59 |
Optoelectronic properties of CdTe/Si heterojunction prepared by pulsed Nd:YAG-laser deposition technique
|
Ismail, Raid A.
|
|
2007
|
|
1 |
p. 19-23
5 p.
|
artikel
|
| 60 |
Oxidation enhanced diffusion during the growth of ultrathin oxides
|
Stolk, P.A
|
|
1999
|
|
1 |
p. 29-33
5 p.
|
artikel
|
| 61 |
Oxygen precipitate precursors and low temperature gettering processes. II. DLTS analysis of deep levels associated to oxide precipitates
|
Yakimov, E.
|
|
1999
|
|
1 |
p. 69-74
6 p.
|
artikel
|
| 62 |
Oxygen precipitate precursors and low temperature gettering processes. I. Segregation of oxygen and thermal donor generation in the 600–850°C range
|
Cadeo, S
|
|
1999
|
|
1 |
p. 57-68
12 p.
|
artikel
|
| 63 |
Patent report
|
|
|
1999
|
|
1 |
p. 95-101
7 p.
|
artikel
|
| 64 |
Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
|
Feng, Z.C
|
|
2002
|
|
1 |
p. 39-43
5 p.
|
artikel
|
| 65 |
Photoconduction properties of some monomeric phthalocyanines and dibromoanthrone
|
Miles, Janet R.
|
|
2012
|
|
1 |
p. 61-72
12 p.
|
artikel
|
| 66 |
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
|
Hu, Qiang
|
|
2012
|
|
1 |
p. 15-19
5 p.
|
artikel
|
| 67 |
Post-annealing modification in structural properties of ZnO thin films on p-type Si substrate deposited by evaporation
|
Asghar, M.
|
|
2008
|
|
1 |
p. 30-35
6 p.
|
artikel
|
| 68 |
Post-deposition annealing effect on In2S3 thin films deposited using SILAR technique
|
Ranjith, R.
|
|
2007
|
|
1 |
p. 49-55
7 p.
|
artikel
|
| 69 |
Preparation, characterization and photoactivity of hollow N, Co co-doped TiO2/SiO2 microspheres
|
Zhang, Ling
|
|
2011
|
|
1 |
p. 52-57
6 p.
|
artikel
|
| 70 |
Preparation, structural characterization, semiconductor and photoluminescent properties of zinc oxide nanoparticles in a phosphonium-based ionic liquid
|
Goharshadi, Elaheh K.
|
|
2011
|
|
1 |
p. 69-72
4 p.
|
artikel
|
| 71 |
Properties of CdTe films brush plated on high temperature substrates
|
Murali, K.R.
|
|
2007
|
|
1 |
p. 36-40
5 p.
|
artikel
|
| 72 |
Residual free reactive ion etching of the Bell contact Ti/Pt/Au
|
Franz, Gerhard
|
|
2002
|
|
1 |
p. 45-50
6 p.
|
artikel
|
| 73 |
Review of low-voltage CMOS LSI technology as a standard in the 21st century
|
Mutoh, Shin'ichiro
|
|
1998
|
|
1 |
p. 5-16
12 p.
|
artikel
|
| 74 |
Semiconductor parameter extraction using cathodoluminescence and genetic algorithms
|
Soualmia, S.
|
|
2011
|
|
1 |
p. 62-68
7 p.
|
artikel
|
| 75 |
Simulation of selective tungsten chemical vapour deposition
|
Kuijlaars, K.J.
|
|
1998
|
|
1 |
p. 43-54
12 p.
|
artikel
|
| 76 |
Sol–gel deposited SiO2 and hybrid low dielectric constant thin films
|
Joshi, Bhavana N.
|
|
2010
|
|
1 |
p. 41-45
5 p.
|
artikel
|
| 77 |
Strain effect on magnetoresistance of SiGe solid solution whiskers at low temperatures
|
Druzhinin, A.A.
|
|
2011
|
|
1 |
p. 18-22
5 p.
|
artikel
|
| 78 |
Structural and electronic properties calculations of Be x Zn1− x Se alloy
|
Ameri, M.
|
|
2007
|
|
1 |
p. 6-13
8 p.
|
artikel
|
| 79 |
Structural, magnetic and electrical properties of Fe/Si system
|
Lal, Chhagan
|
|
2008
|
|
1 |
p. 1-5
5 p.
|
artikel
|
| 80 |
Structure of ZnO films prepared by oxidation of metallic Zinc
|
Gupta, Rohit Kumar
|
|
2002
|
|
1 |
p. 11-15
5 p.
|
artikel
|
| 81 |
Study of oriented growth of oligofluorene–thiophene films onto aligned vacuum-deposited polytetrafluoroethylene layers
|
Prelipceanu, Marius
|
|
2007
|
|
1 |
p. 24-35
12 p.
|
artikel
|
| 82 |
Suppression of oxidation-induced stacking fault generation in argon ambient annealing with controlled oxygen and the effect upon bulk defects
|
Suzuki, Toshiharu
|
|
2002
|
|
1 |
p. 5-10
6 p.
|
artikel
|
| 83 |
Surfactant free hydrothermally derived ZnO nanowires, nanorods, microrods and their characterization
|
Nagaraju, G.
|
|
2010
|
|
1 |
p. 21-28
8 p.
|
artikel
|
| 84 |
Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
|
Li, S.G.
|
|
2012
|
|
1 |
p. 86-90
5 p.
|
artikel
|
| 85 |
The development of Ti silicide on poly gate structures with oxidized sidewall and application in a novel RF LDMOSFET
|
Qu, X.X
|
|
2002
|
|
1 |
p. 1-4
4 p.
|
artikel
|
| 86 |
The effect of Al3+ co-doping on the structural, magnetic and optical properties of ZnCoO thin films
|
Cao, P.
|
|
2011
|
|
1 |
p. 73-77
5 p.
|
artikel
|
| 87 |
The effect of deposition conditions on structure properties of radio frequency reactive sputtered polycrystalline ZnO films
|
Gong, Hengxiang
|
|
2002
|
|
1 |
p. 31-34
4 p.
|
artikel
|
| 88 |
The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
|
Yıldız, D.E.
|
|
2010
|
|
1 |
p. 34-40
7 p.
|
artikel
|
| 89 |
The fabrication and electrical characteristics of ZnO twinned nanowires
|
Cao, L.
|
|
2008
|
|
1 |
p. 25-29
5 p.
|
artikel
|
| 90 |
The influence of thickness and ammonia flow rate on the properties of AlN layers
|
Çörekçi, S.
|
|
2012
|
|
1 |
p. 32-36
5 p.
|
artikel
|
| 91 |
Thermal conductivity of AlN thin films deposited by RF magnetron sputtering
|
Park, Min-Ho
|
|
2012
|
|
1 |
p. 6-10
5 p.
|
artikel
|
| 92 |
Transparent semiconducting ZnO:Al thin films prepared by spray pyrolysis
|
Seeber, W.T
|
|
1999
|
|
1 |
p. 45-55
11 p.
|
artikel
|
| 93 |
UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide
|
Zetterling, Carl-Mikael
|
|
1999
|
|
1 |
p. 23-27
5 p.
|
artikel
|
| 94 |
ZnS thin film and Zn/ZnS/n-Si/Au-Sb sandwich structure grown with SILAR method and defining the characteristic parameters
|
Ateş, Aytunç
|
|
2011
|
|
1 |
p. 28-36
9 p.
|
artikel
|
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