nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advances in the structural characterisation of semiconductor crystals by X-ray scattering methods
|
Fewster, Paul F. |
|
2004 |
|
C |
p. 245-273 29 p. |
artikel |
2 |
Atomistic aspects of molecular beam epitaxy
|
Nishinaga, Tatau |
|
2004 |
|
C |
p. 104-122 19 p. |
artikel |
3 |
Boundary layers in crystal growth -Facts and fancy
|
Rosenberger, Franz |
|
1993 |
|
C |
p. 87-98 12 p. |
artikel |
4 |
Contents page
|
|
|
2004 |
|
C |
p. iii- 1 p. |
artikel |
5 |
Crystal growth and defect control in organic crystals
|
Kojima, Kenichi |
|
1992 |
|
C |
p. 369-420 52 p. |
artikel |
6 |
Crystal growth from the vapour phase in microgravity
|
Carotenuto, Luigi |
|
2004 |
|
C |
p. 166-188 23 p. |
artikel |
7 |
Crystal growth under reduced gravity
|
Benz, K.W. |
|
1993 |
|
C |
p. 267-284 18 p. |
artikel |
8 |
Dendritic solidification of rare gases
|
Bilgram, J.H. |
|
1993 |
|
C |
p. 67-86 20 p. |
artikel |
9 |
Diamond synthesis form the gas phase
|
Kamo, Mutsukazu |
|
1992 |
|
C |
p. 1-22 22 p. |
artikel |
10 |
Editorial Board
|
|
|
1993 |
|
C |
p. CO2- 1 p. |
artikel |
11 |
Editorial Board/Publication Information
|
|
|
2004 |
|
C |
p. CO2- 1 p. |
artikel |
12 |
Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs
|
Miyazawa, Shintaro |
|
1992 |
|
C |
p. 23-71 49 p. |
artikel |
13 |
Elementary processes of protein crystal growth
|
Vekilov, Peter G. |
|
1993 |
|
C |
p. 25-49 25 p. |
artikel |
14 |
Epitaxial growth of III–V compound semiconductor thin films and their device applications
|
Horikoshi, Yoshiji |
|
1992 |
|
C |
p. 73-126 54 p. |
artikel |
15 |
Growth and melting processes of semiconductor crystals observed by live X-ray topography
|
Chikawa, Jun-ichi |
|
1993 |
|
C |
p. 255-265 11 p. |
artikel |
16 |
Growth of cadmium telluride from the vapor phase under low gravity conditions
|
Benz, K.-W. |
|
2004 |
|
C |
p. 189-208 20 p. |
artikel |
17 |
Improvement of growth process and characterization of quartz crystals
|
Taki, Sadao |
|
1992 |
|
C |
p. 313-339 27 p. |
artikel |
18 |
Interplay of physical and chemical aspects in the PECVD and etching of thin solid films
|
Cavallotti, C. |
|
2004 |
|
C |
p. 123-165 43 p. |
artikel |
19 |
Introduction
|
Komatsu, H. |
|
1993 |
|
C |
p. ix-x nvt p. |
artikel |
20 |
Introduction
|
|
|
1992 |
|
C |
p. xi-xii nvt p. |
artikel |
21 |
Meeting device needs through melt growth of large-diameter elemental and compound semiconductors
|
Thomas, R.N. |
|
1993 |
|
C |
p. 219-253 35 p. |
artikel |
22 |
Molecular beam epitaxy growth of GaN, AlN and InN
|
Wang, Xinqiang |
|
2004 |
|
C |
p. 42-103 62 p. |
artikel |
23 |
Natural crystallization and relevant crystal growth experiments
|
Baronnet, A. |
|
1993 |
|
C |
p. 1-24 24 p. |
artikel |
24 |
Point defects and diffusion in cadmium telluride
|
Grill, R. |
|
2004 |
|
C |
p. 209-244 36 p. |
artikel |
25 |
Preface
|
|
|
1992 |
|
C |
p. ix-x nvt p. |
artikel |
26 |
Preface
|
Sunagawa, Ichiro |
|
1993 |
|
C |
p. vii-viii nvt p. |
artikel |
27 |
Preface: Part II
|
Mullin, Brian |
|
2004 |
|
C |
p. 1- 1 p. |
artikel |
28 |
Present-day understanding of crystal growth from aqueous solutions
|
Chernov, A.A. |
|
1993 |
|
C |
p. 121-151 31 p. |
artikel |
29 |
Recent developments in high-Tc single crystal growth in Japan: Bulk and thin film
|
Hidaka, Yoshikasu |
|
1992 |
|
C |
p. 226-243 18 p. |
artikel |
30 |
Recent developments in high-Tc single crystal growth in Japan: Bulk and thin film
|
Hidaka, Yoshikasu |
|
1992 |
|
C |
p. 179-225 47 p. |
artikel |
31 |
Roughening and melting of crystalline surfaces
|
Chernov, A.A. |
|
1993 |
|
C |
p. 195-218 24 p. |
artikel |
32 |
Single crystals for radiation detectors
|
Ishii, Mitsuru |
|
1992 |
|
C |
p. 245-311 67 p. |
artikel |
33 |
Single crystals of carbides and borides as electron emitters
|
Otani, Shigeki |
|
1992 |
|
C |
p. 153-177 25 p. |
artikel |
34 |
Single crystals of SiC and their application to blue LEDs
|
Koga, K. |
|
1992 |
|
C |
p. 127-151 25 p. |
artikel |
35 |
Subject index
|
|
|
1993 |
|
C |
p. 285-288 4 p. |
artikel |
36 |
Subject index
|
|
|
1992 |
|
C |
p. 421-424 4 p. |
artikel |
37 |
Synthetic calcite single crystals for optical device
|
Hirano, S. |
|
1992 |
|
C |
p. 341-367 27 p. |
artikel |
38 |
The roughening transition and the growth of helium crystals
|
Balibar, S. |
|
1993 |
|
C |
p. 51-66 16 p. |
artikel |
39 |
The structure and properties of melt and concentrated solutions
|
Bilgram, J.H. |
|
1993 |
|
C |
p. 99-119 21 p. |
artikel |
40 |
Transport phenomena in crystal growth from solution
|
Wilcox, William R. |
|
1993 |
|
C |
p. 153-194 42 p. |
artikel |
41 |
Vapour growth of bulk crystals by PVT and CVT
|
Paorici, Carlo |
|
2004 |
|
C |
p. 2-41 40 p. |
artikel |