| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate measurement of fracture toughness of free standing diamond films by three-point bending tests with sharp pre-cracked specimens
|
Jiang, Z
|
|
2000
|
9 |
9-10 |
p. 1734-1738
5 p.
|
artikel
|
| 2 |
A chemical adsorption growth model for hot filament chemical vapor deposition diamond
|
Sun, Jianwei
|
|
2000
|
9 |
9-10 |
p. 1668-1672
5 p.
|
artikel
|
| 3 |
A dynamic and thermodynamic model of diamond film growth
|
Yao, Wenjing
|
|
2000
|
9 |
9-10 |
p. 1664-1667
4 p.
|
artikel
|
| 4 |
Analysis of optical emission spectroscopy in diamond chemical vapor deposition
|
Liao, Y
|
|
2000
|
9 |
9-10 |
p. 1716-1721
6 p.
|
artikel
|
| 5 |
A near-infrared diamond anti-reflective filter window
|
Ying, Xuantong
|
|
2000
|
9 |
9-10 |
p. 1730-1733
4 p.
|
artikel
|
| 6 |
Carbon nitride films deposited from organic solutions by electrodeposition
|
Cao, Chuanbao
|
|
2000
|
9 |
9-10 |
p. 1786-1789
4 p.
|
artikel
|
| 7 |
Carbon transition efficiency and process cost in high-rate, large-area deposition of diamond films by DC arc plasma jet
|
Pan, W.X
|
|
2000
|
9 |
9-10 |
p. 1682-1686
5 p.
|
artikel
|
| 8 |
Chemical bonding, structure, and hardness of carbon nitride thin films
|
Zheng, W.T.
|
|
2000
|
9 |
9-10 |
p. 1790-1794
5 p.
|
artikel
|
| 9 |
Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet
|
Guo, H.
|
|
2000
|
9 |
9-10 |
p. 1673-1677
5 p.
|
artikel
|
| 10 |
Diamond nucleation and growth under very low-pressure conditions
|
Kang, Jian
|
|
2000
|
9 |
9-10 |
p. 1691-1695
5 p.
|
artikel
|
| 11 |
Economical deposition of a large area of high quality diamond film by a high power DC arc plasma jet operating in a gas recycling mode
|
Lu, F.X
|
|
2000
|
9 |
9-10 |
p. 1655-1659
5 p.
|
artikel
|
| 12 |
Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films
|
Shih, Chuan-Feng
|
|
2000
|
9 |
9-10 |
p. 1591-1599
9 p.
|
artikel
|
| 13 |
Effect of substrate temperature on the selective deposition of diamond films
|
Zhang, Wenguang
|
|
2000
|
9 |
9-10 |
p. 1687-1690
4 p.
|
artikel
|
| 14 |
Electrical properties of chemical vapor deposition diamond films and electrical response to X-ray
|
Wang, Linjun
|
|
2000
|
9 |
9-10 |
p. 1617-1620
4 p.
|
artikel
|
| 15 |
Electron emission from diamond thin films deposited by microwave plasma-chemical vapor deposition method
|
Gu, Changzhi
|
|
2000
|
9 |
9-10 |
p. 1604-1607
4 p.
|
artikel
|
| 16 |
Electron microscopy of interfaces in chemical vapour deposition diamond films on silicon
|
Wittorf, D
|
|
2000
|
9 |
9-10 |
p. 1696-1702
7 p.
|
artikel
|
| 17 |
Electron transport and electron field emission of nanodiamond synthesized by explosive detonation
|
He, Deyan
|
|
2000
|
9 |
9-10 |
p. 1600-1603
4 p.
|
artikel
|
| 18 |
Growth and characterization of hillock-free high quality homoepitaxial diamond films
|
Wang, Chunlei
|
|
2000
|
9 |
9-10 |
p. 1650-1654
5 p.
|
artikel
|
| 19 |
Growth, doping and applications of cubic boron nitride thin films
|
Ronning, C
|
|
2000
|
9 |
9-10 |
p. 1767-1773
7 p.
|
artikel
|
| 20 |
Growth of CVD heteroepitaxial diamond on silicon (001) and its electronic properties
|
He, X.C
|
|
2000
|
9 |
9-10 |
p. 1626-1631
6 p.
|
artikel
|
| 21 |
Highly efficient electron emitting diode fabricated with single-crystalline diamond
|
Ito, Toshimichi
|
|
2000
|
9 |
9-10 |
p. 1561-1568
8 p.
|
artikel
|
| 22 |
High quality heteroepitaxial diamond films on silicon: recent progresses
|
Jiang, X.
|
|
2000
|
9 |
9-10 |
p. 1640-1645
6 p.
|
artikel
|
| 23 |
High resolution transmission electron microscopy study of the initial growth of diamond on silicon
|
Lin, T
|
|
2000
|
9 |
9-10 |
p. 1703-1707
5 p.
|
artikel
|
| 24 |
Index
|
|
|
2000
|
9 |
9-10 |
p. 1806-1833
28 p.
|
artikel
|
| 25 |
Index
|
|
|
2000
|
9 |
9-10 |
p. 1800-1805
6 p.
|
artikel
|
| 26 |
Influence of d.c. substrate bias voltage on growth of cubic boron nitride films by radio frequency sputter
|
Deng, Jinxiang
|
|
2000
|
9 |
9-10 |
p. 1779-1781
3 p.
|
artikel
|
| 27 |
Magnetoresistance effect of p-type diamond films in various doping levels at different temperatures
|
Wang, W.L
|
|
2000
|
9 |
9-10 |
p. 1612-1616
5 p.
|
artikel
|
| 28 |
Measurement of field emission from nitrogen-doped diamond films
|
Sowers, A.T
|
|
2000
|
9 |
9-10 |
p. 1569-1573
5 p.
|
artikel
|
| 29 |
Mechanism of diamond epitaxial growth on silicon
|
Ishigaki, N
|
|
2000
|
9 |
9-10 |
p. 1646-1649
4 p.
|
artikel
|
| 30 |
Micro-Raman analysis of the cross-section of a diamond film prepared by hot-filament chemical vapor deposition
|
Wang, G.Z
|
|
2000
|
9 |
9-10 |
p. 1712-1715
4 p.
|
artikel
|
| 31 |
Micro-Raman scattering and photoluminescence study of boron-doped diamond films
|
Wang, Yuguang
|
|
2000
|
9 |
9-10 |
p. 1708-1711
4 p.
|
artikel
|
| 32 |
Modification of emission properties of diamond films due to surface treatment process
|
Lin, I-Nan
|
|
2000
|
9 |
9-10 |
p. 1574-1581
8 p.
|
artikel
|
| 33 |
Nucleation and growth of diamond films on aluminum nitride by hot filament chemical vapor deposition
|
Wang, W.L
|
|
2000
|
9 |
9-10 |
p. 1660-1663
4 p.
|
artikel
|
| 34 |
Optical, thermal and mechanical properties of CVD diamond
|
Coe, S.E
|
|
2000
|
9 |
9-10 |
p. 1726-1729
4 p.
|
artikel
|
| 35 |
Pattern metallization on diamond thick film substrate
|
Wang, Jiayu
|
|
2000
|
9 |
9-10 |
p. 1632-1635
4 p.
|
artikel
|
| 36 |
Preface
|
Lu, F.X
|
|
2000
|
9 |
9-10 |
p. vii-
1 p.
|
artikel
|
| 37 |
Preparation and performance of diamond coatings on cemented carbide inserts with cobalt boride interlayers
|
Tang, W
|
|
2000
|
9 |
9-10 |
p. 1744-1748
5 p.
|
artikel
|
| 38 |
Preparation of high quality transparent chemical vapor deposition diamond films by a DC arc plasma jet method
|
Guofang, Zhong
|
|
2000
|
9 |
9-10 |
p. 1678-1681
4 p.
|
artikel
|
| 39 |
Pre-treatment for diamond coatings on free-shape WC–Co tools
|
Zhang, Z.M.
|
|
2000
|
9 |
9-10 |
p. 1749-1752
4 p.
|
artikel
|
| 40 |
Recent studies on diamond surfaces
|
Wang, Y.M.
|
|
2000
|
9 |
9-10 |
p. 1582-1590
9 p.
|
artikel
|
| 41 |
Residual stresses in chemical vapour deposited diamond films
|
Fan, Qi Hua
|
|
2000
|
9 |
9-10 |
p. 1739-1743
5 p.
|
artikel
|
| 42 |
Spherical nanometer-sized diamond obtained from detonation
|
Chen, P.W
|
|
2000
|
9 |
9-10 |
p. 1722-1725
4 p.
|
artikel
|
| 43 |
Structural modification of polymeric amorphous hydrogenated carbon films induced by high energetic He+ irradiation and thermal annealing
|
Zhang, Qing
|
|
2000
|
9 |
9-10 |
p. 1758-1761
4 p.
|
artikel
|
| 44 |
Study on metal-doped diamond-like carbon films synthesized by cathodic arc evaporation
|
Wang, Da-Yung
|
|
2000
|
9 |
9-10 |
p. 1762-1766
5 p.
|
artikel
|
| 45 |
Study on SiC layers synthesized with carbon ion beam at low substrate temperature
|
Yan, H
|
|
2000
|
9 |
9-10 |
p. 1795-1798
4 p.
|
artikel
|
| 46 |
Surfaces of undoped and boron doped polycrystalline diamond films influenced by negative DC bias voltage
|
Xia, Yiben
|
|
2000
|
9 |
9-10 |
p. 1636-1639
4 p.
|
artikel
|
| 47 |
The cutting performance of diamond and DLC-coated cutting tools
|
Dai, Mingjiang
|
|
2000
|
9 |
9-10 |
p. 1753-1757
5 p.
|
artikel
|
| 48 |
The different characteristics of boron and nitrogen atoms/ions on silicon (001) substrate and their effect on boron nitride growth
|
Zhang, R.Q
|
|
2000
|
9 |
9-10 |
p. 1774-1778
5 p.
|
artikel
|
| 49 |
The effect of nitrogen addition on field emission of diamond-like carbon films
|
Ma, Huizhong
|
|
2000
|
9 |
9-10 |
p. 1608-1611
4 p.
|
artikel
|
| 50 |
Thermoanalysis and XRD study of crystallization behaviors of amorphous carbon nitride
|
Xiao, Xing Cheng
|
|
2000
|
9 |
9-10 |
p. 1782-1785
4 p.
|
artikel
|
| 51 |
UV and visible photoconductivity of undoped diamond films: morphology and related electrical transport phenomena
|
Pereira, L
|
|
2000
|
9 |
9-10 |
p. 1621-1625
5 p.
|
artikel
|
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