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                             210 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A carbon based bottom gate thin film transistor Maeng, S.L.
 2000
 9 3-6 p. 805-810
6 p.
 artikel
2 Amorphous carbon: how much of free hydrogen? Kapitonov, I.N
 2000
 9 3-6 p. 707-710
4 p.
 artikel
3 A new method to determine laser damage threshold for thin diamond-like carbon films on silicon Vouagner, D.
 2000
 9 3-6 p. 786-791
6 p.
 artikel
4 An optical absorption and electron spin resonance study in hydrogenated amorphous carbon prepared by radio frequency sputtering Zeinert, A.
 2000
 9 3-6 p. 728-731
4 p.
 artikel
5 A study of plastic deformation profiles of impressions in diamond Brookes, E.J.
 2000
 9 3-6 p. 1115-1119
5 p.
 artikel
6 A study of radiotherapy dosimeters based on diamond grown by chemical vapour deposition Buttar, C.M.
 2000
 9 3-6 p. 965-969
5 p.
 artikel
7 A superhard diamond-like carbon film Inkin, V.N.
 2000
 9 3-6 p. 715-721
7 p.
 artikel
8 Asymmetry of ‘valence’ and ‘conduction’ Gaussian π bands in a-C:H and a-C thin films and its origin Fanchini, G.
 2000
 9 3-6 p. 732-735
4 p.
 artikel
9 Atomic structure and electronic state of boron nitride fullerenes and nanotubes Hirano, Takanori
 2000
 9 3-6 p. 625-628
4 p.
 artikel
10 BCN thin films near the B4C composition deposited by radio frequency magnetron sputtering Lousa, A.
 2000
 9 3-6 p. 502-505
4 p.
 artikel
11 Bonding regimes of nitrogen in amorphous carbon Kleinsorge, B.
 2000
 9 3-6 p. 643-648
6 p.
 artikel
12 Boron carbide films deposited by a magnetron sputter–ion plating process: film composition and tribological properties Reigada, D.C
 2000
 9 3-6 p. 489-493
5 p.
 artikel
13 Branching carbon nanotubes deposited in HFCVD system Gan, Bo
 2000
 9 3-6 p. 897-900
4 p.
 artikel
14 Calculated electronic density of states and structural properties of tetrahedral amorphous carbon Koivusaari, K.Jarmo
 2000
 9 3-6 p. 736-740
5 p.
 artikel
15 Capacitance–voltage profiling of deuterium passivation and diffusion in diamond Schottky diodes Zeisel, R.
 2000
 9 3-6 p. 413-416
4 p.
 artikel
16 Carbon nitride layers created by laser deposition combined with RF discharge Zemek, J.
 2000
 9 3-6 p. 548-551
4 p.
 artikel
17 Characterisation of defects in thin films of hydrogenated amorphous carbon Collins, M.
 2000
 9 3-6 p. 781-785
5 p.
 artikel
18 Characterisation of the secondary glow region of a biased microwave plasma by optical emission spectroscopy Whitfield, Michael D.
 2000
 9 3-6 p. 305-310
6 p.
 artikel
19 Characteristics of flat panel display using carbon nanotubes as electron emitters Kwo, J.L.
 2000
 9 3-6 p. 1270-1274
5 p.
 artikel
20 Characteristics of homoepitaxial heavily boron-doped diamond films from their Raman spectra Pruvost, F.
 2000
 9 3-6 p. 295-299
5 p.
 artikel
21 Characterization of boron doped polycrystalline CVD diamond by ultra high vacuum scanning tunneling microscopy Kim, Y.D
 2000
 9 3-6 p. 1096-1099
4 p.
 artikel
22 Characterization of DLC:Si films by the gas effusion technique Camargo Jr., S.S.
 2000
 9 3-6 p. 658-662
5 p.
 artikel
23 Characterization of the broad green band luminescence in CVD and synthetic Ib diamond Iakoubovskii, K.
 2000
 9 3-6 p. 1017-1020
4 p.
 artikel
24 Chemical stability of nano-diamond films deposited by the dc-glow discharge process Gouzman, I.
 2000
 9 3-6 p. 378-383
6 p.
 artikel
25 Chemical vapour deposition diamond coated microtools for grinding, milling and drilling Gäbler, Jan
 2000
 9 3-6 p. 921-924
4 p.
 artikel
26 Chemical vapour deposition of diamond on nitrided chromium using an oxyacetylene flame Buijnsters, J.G.
 2000
 9 3-6 p. 341-345
5 p.
 artikel
27 Comparative studies on field emission properties of carbon-based materials Chen, K.H.
 2000
 9 3-6 p. 1249-1256
8 p.
 artikel
28 Comparative study of anneal-induced modifications of amorphous carbon films deposited by dc magnetron sputtering at different argon plasma pressures Jacobsohn, L.G.
 2000
 9 3-6 p. 680-684
5 p.
 artikel
29 Comparative study on the bonding structure of hydrogenated and hydrogen free carbon nitride films with high N content Hammer, P.
 2000
 9 3-6 p. 577-581
5 p.
 artikel
30 Comprehensive study on the properties of multilayered amorphous carbon films Logothetidis, S.
 2000
 9 3-6 p. 756-760
5 p.
 artikel
31 Corrosion hard CVD diamond alpha particle detectors for nuclear liquid source monitoring Bergonzo, P.
 2000
 9 3-6 p. 1003-1007
5 p.
 artikel
32 Crystalline structures of carbon complexes in amorphous carbon films Komninou, Ph.
 2000
 9 3-6 p. 703-706
4 p.
 artikel
33 Current status and advances in the growth of SiC Yakimova, R
 2000
 9 3-6 p. 432-438
7 p.
 artikel
34 Deep-level transient spectroscopy in the depletion zone of boron-doped homoepitaxial diamond films Muret, P.
 2000
 9 3-6 p. 1041-1045
5 p.
 artikel
35 Defect and disorder reduction by annealing in hydrogenated tetrahedral amorphous carbon Conway, N.M.J.
 2000
 9 3-6 p. 765-770
6 p.
 artikel
36 Density, sp3 content and internal layering of DLC films by X-ray reflectivity and electron energy loss spectroscopy LiBassi, A.
 2000
 9 3-6 p. 771-776
6 p.
 artikel
37 Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source Rodil, S.
 2000
 9 3-6 p. 524-529
6 p.
 artikel
38 Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition Chang, L.
 2000
 9 3-6 p. 283-289
7 p.
 artikel
39 Deposition of nanocomposite CN x /SiO2 films in inductively coupled r.f. discharge Eliás̆, M.
 2000
 9 3-6 p. 552-555
4 p.
 artikel
40 Development of DLC film technology for electronic application Baranov, A.M.
 2000
 9 3-6 p. 649-653
5 p.
 artikel
41 Diamond as a tool for synchrotron radiation monitoring: beam position, profile, and temporal distribution Bergonzo, P.
 2000
 9 3-6 p. 960-964
5 p.
 artikel
42 Diamond coatings deposited on tool materials with a 915 MHz scaled up surface-wave-sustained plasma Ilias, S.
 2000
 9 3-6 p. 1120-1124
5 p.
 artikel
43 Diamond deposition on copper treated hardmetal substrates Sommer, M.
 2000
 9 3-6 p. 351-357
7 p.
 artikel
44 Diamond deposition using a novel microwave applicator Donnelly, K.
 2000
 9 3-6 p. 693-697
5 p.
 artikel
45 Diamond-like carbon coatings applied to hard disks Fung, M.K.
 2000
 9 3-6 p. 815-818
4 p.
 artikel
46 Diamond-like carbon prepared by high density plasma Sánchez-López, J.C.
 2000
 9 3-6 p. 638-642
5 p.
 artikel
47 Diamond polishing from different angles van Bouwelen, F.M.
 2000
 9 3-6 p. 925-928
4 p.
 artikel
48 Diamond synthesis with a DC plasma jet: control of the substrate temperature Breiter, M.
 2000
 9 3-6 p. 333-336
4 p.
 artikel
49 Dielectric losses of self-supporting chemically vapour deposited diamond materials Mollá, J.
 2000
 9 3-6 p. 1071-1075
5 p.
 artikel
50 Dielectric properties of RF plasma-deposited a-C:H and a-C:H:N films Romanko, L.A
 2000
 9 3-6 p. 801-804
4 p.
 artikel
51 Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films Ballutaud, D.
 2000
 9 3-6 p. 1171-1174
4 p.
 artikel
52 Double-layer coatings on WC–Co hardmetals containing diamond and titanium carbide/nitride Köpf, A.
 2000
 9 3-6 p. 494-501
8 p.
 artikel
53 Dynamic synthesis of diamonds Donnet, J.B.
 2000
 9 3-6 p. 887-892
6 p.
 artikel
54 Effect of boron concentration on the electrochemical reduction of nitrates on polycrystalline diamond electrodes Ndao, A.N.
 2000
 9 3-6 p. 1175-1180
6 p.
 artikel
55 Effect of carbon nitride bonding structure on electron field emission Yap, Y.K.
 2000
 9 3-6 p. 1228-1232
5 p.
 artikel
56 Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor Wu, J.J.
 2000
 9 3-6 p. 556-561
6 p.
 artikel
57 Effect of isotope content on the cubic boron nitride lattice thermal conductivity Novikov, N.V.
 2000
 9 3-6 p. 629-631
3 p.
 artikel
58 Effect of source gas chemistry on tribological performance of diamond-like carbon films Erdemir, A.
 2000
 9 3-6 p. 632-637
6 p.
 artikel
59 Effects of point defects on the electrical properties of doped diamond Reznik, A
 2000
 9 3-6 p. 1051-1056
6 p.
 artikel
60 Elastic constants of ultrathin diamond-like carbon films Pastorelli, R.
 2000
 9 3-6 p. 825-830
6 p.
 artikel
61 Electrochemically induced surface modifications of boron-doped diamond electrodes: an X-ray photoelectron spectroscopy study Goeting, Christiaan H.
 2000
 9 3-6 p. 390-396
7 p.
 artikel
62 Electron-beam-induced currents on beryllium-doped cubic boron nitride single crystal Tomokage, Hajime
 2000
 9 3-6 p. 605-608
4 p.
 artikel
63 Electron density in moderate pressure diamond deposition discharges Grotjohn, T.A.
 2000
 9 3-6 p. 322-327
6 p.
 artikel
64 Electron field emission from diamond-like carbon films after dielectric breakdown and from diamond films after the activation process Inomoto, Hideo
 2000
 9 3-6 p. 1209-1212
4 p.
 artikel
65 Electron–hole drops in synthetic diamond Thonke, K.
 2000
 9 3-6 p. 428-431
4 p.
 artikel
66 Electronic properties of diamond surfaces — blessing or curse for devices? Ristein, J.
 2000
 9 3-6 p. 1129-1137
9 p.
 artikel
67 Electronic properties of the emission sites of low-field emitting diamond films Frolov, V.D.
 2000
 9 3-6 p. 1196-1200
5 p.
 artikel
68 Electronic states of phosphorus in diamond Gheeraert, E.
 2000
 9 3-6 p. 948-951
4 p.
 artikel
69 Electron stimulated desorption from oxygenated and hydrogenated synthetic diamond films Hopman, H.J.
 2000
 9 3-6 p. 1238-1244
7 p.
 artikel
70 Electron stimulated desorption of negative hydrogen ions from diamond (100) Goeden, C.
 2000
 9 3-6 p. 1164-1166
3 p.
 artikel
71 Emission current influence of gated structure and diamond emitter morphologies in triode-type field emission arrays Chen, Chia-Fu
 2000
 9 3-6 p. 1257-1262
6 p.
 artikel
72 Energy distribution of field emitted electrons from carbon nanotubes Schlesser, R
 2000
 9 3-6 p. 1201-1204
4 p.
 artikel
73 Engineering low resistance contacts on p-type hydrogenated diamond surfaces Looi, Hui Jin
 2000
 9 3-6 p. 975-981
7 p.
 artikel
74 Epitaxial aluminum nitride thin films grown by pulsed laser deposition in various nitrogen ambients Okamoto, M
 2000
 9 3-6 p. 516-519
4 p.
 artikel
75 Epitaxial Ir layers on SrTiO3 as substrates for diamond nucleation: deposition of the films and modification in the CVD environment Hörmann, F.
 2000
 9 3-6 p. 256-261
6 p.
 artikel
76 Etching of DLC films using a low intensity oxygen plasma jet Urruchi, W.I.
 2000
 9 3-6 p. 685-688
4 p.
 artikel
77 Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide Zhmakin, I.A.
 2000
 9 3-6 p. 446-451
6 p.
 artikel
78 Experimental and theoretical studies of cobalt defects in diamond Johnston, Karl
 2000
 9 3-6 p. 424-427
4 p.
 artikel
79 Fabrication and magnetic properties of boron nitride nanocapsules encaging iron oxide nanoparticles Hirano, Takanori
 2000
 9 3-6 p. 476-479
4 p.
 artikel
80 Fabrication and testing of a microstrip particle detector based on highly oriented diamond films Han, S.K.
 2000
 9 3-6 p. 1008-1012
5 p.
 artikel
81 Fast stable visible-blind and highly sensitive CVD diamond UV photodetectors for laboratory and space applications Pace, E
 2000
 9 3-6 p. 987-993
7 p.
 artikel
82 Field emission characteristics of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition Sugino, Takashi
 2000
 9 3-6 p. 1233-1237
5 p.
 artikel
83 Field emission controlled by the substrate/CVD diamond interface Koenigsfeld, N.
 2000
 9 3-6 p. 1218-1221
4 p.
 artikel
84 Field emission from carbon nanotubes for displays Kim, Jong Min
 2000
 9 3-6 p. 1184-1189
6 p.
 artikel
85 Field emission from nanostructured carbon materials Obraztsov, Alexander N.
 2000
 9 3-6 p. 1190-1195
6 p.
 artikel
86 Formation and structure of Ag, Ge and SiC nanoparticles encapsulated in boron nitride and carbon nanocapsules Oku, Takeo
 2000
 9 3-6 p. 911-915
5 p.
 artikel
87 Fourier transform infrared spectroscopy of CH vibrational modes on a diamond (111) surface Mantel, B.F.
 2000
 9 3-6 p. 1032-1035
4 p.
 artikel
88 Fracture strength of chemically vapor deposited diamond on the substrate and its relation to the crystalline structure Kamiya, S
 2000
 9 3-6 p. 1110-1114
5 p.
 artikel
89 Free-standing diamond wafers deposited by multi-cathode, direct-current, plasma-assisted chemical vapor deposition Lee, Jae-Kap
 2000
 9 3-6 p. 364-367
4 p.
 artikel
90 From fullerenes to carbon nanotubes by Ni catalysis Czerwosz, E.
 2000
 9 3-6 p. 901-905
5 p.
 artikel
91 Growth and high temperature performance of semi-insulating silicon carbide Reshanov, Sergey A
 2000
 9 3-6 p. 480-482
3 p.
 artikel
92 Growth, characterization, optical and X-ray absorption studies of nano-crystalline diamond films Chen, L.C.
 2000
 9 3-6 p. 877-882
6 p.
 artikel
93 Growth of adhesive c-BN films on a tensile BN buffer layer Yap, Y.K.
 2000
 9 3-6 p. 592-595
4 p.
 artikel
94 Growth of nitride crystals, BN, AlN and GaN by using a Na flux Yano, M
 2000
 9 3-6 p. 512-515
4 p.
 artikel
95 High collection efficiency in chemical vapor deposited diamond particle detectors Marinelli, M.
 2000
 9 3-6 p. 998-1002
5 p.
 artikel
96 High-resolution electron energy-loss spectroscopy of undoped and nitrogen-doped tetrahedral amorphous carbon films Waidmann, S.
 2000
 9 3-6 p. 722-727
6 p.
 artikel
97 High-temperature performances of diamond-based UV-photodetectors Salvatori, S
 2000
 9 3-6 p. 982-986
5 p.
 artikel
98 Holes in boron-doped diamond: comparison between experiment and an improved model Fontaine, Frédéric
 2000
 9 3-6 p. 1076-1080
5 p.
 artikel
99 Homoepitaxial diamond films grown by step-flow mode in various misorientation angles of diamond substrates Takeuchi, D.
 2000
 9 3-6 p. 231-235
5 p.
 artikel
100 Homoepitaxial growth on fine columns of single crystal diamond for a field emitter Nishibayashi, Yoshiki
 2000
 9 3-6 p. 290-294
5 p.
 artikel
101 Hopping conduction via the excited states of boron in p-type diamond Inushima, Takashi
 2000
 9 3-6 p. 1066-1070
5 p.
 artikel
102 Hydrogenated amorphous carbon films deposited in an electron cyclotron resonance–chemical vapor deposition discharge reactor using acetylene Kim, B.K.
 2000
 9 3-6 p. 654-657
4 p.
 artikel
103 Hydrogen termination and electron emission from CVD diamond surfaces: a combined secondary electron emission, photoelectron emission microscopy, photoelectron yield, and field emission study Cui, J.B
 2000
 9 3-6 p. 1143-1147
5 p.
 artikel
104 Hypothesis on the conductivity mechanism in hydrogen terminated diamond films Denisenko, A.
 2000
 9 3-6 p. 1138-1142
5 p.
 artikel
105 Impedance studies of boron-doped CVD diamond electrodes Latto, Matthew N.
 2000
 9 3-6 p. 1181-1183
3 p.
 artikel
106 Improved DC arc-jet diamond deposition with a secondary downstream discharge Pereverzev, V.G.
 2000
 9 3-6 p. 373-377
5 p.
 artikel
107 Index 2000
 9 3-6 p. 1288-1306
19 p.
 artikel
108 Index 2000
 9 3-6 p. 1283-1287
5 p.
 artikel
109 Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering Chalker, P.R.
 2000
 9 3-6 p. 520-523
4 p.
 artikel
110 Influence of electrical defects on diamond detection properties Tromson, D.
 2000
 9 3-6 p. 1091-1095
5 p.
 artikel
111 Influence of SiC particle addition on the nucleation density and adhesion strength of MPCVD diamond coatings on Si3N4 substrates Silva, V.A
 2000
 9 3-6 p. 483-488
6 p.
 artikel
112 Influence of the growth parameters on the electrical properties of thin polycrystalline CVD diamond films Jany, C.
 2000
 9 3-6 p. 1086-1090
5 p.
 artikel
113 In situ deposition and etching process of a-C:H:N films in a dual electron cyclotron resonance–radio frequency plasma Hong, Junegie
 2000
 9 3-6 p. 573-576
4 p.
 artikel
114 Interaction of organo-sulfur compounds with CVD diamond surfaces Baral, B
 2000
 9 3-6 p. 1167-1170
4 p.
 artikel
115 Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy Morrice, D.E.
 2000
 9 3-6 p. 460-463
4 p.
 artikel
116 Investigation of the growth mechanisms and electron emission properties of carbon nanostructures prepared by hot-filament chemical vapour deposition Bonnot, A.M
 2000
 9 3-6 p. 852-855
4 p.
 artikel
117 Investigation on the change in structure of tetrahedral amorphous carbon by a large amount of nitrogen incorporation Bhattacharyya, Somnath
 2000
 9 3-6 p. 544-547
4 p.
 artikel
118 Ion energy distributions and their evolution during bias-enhanced nucleation of chemical vapor deposition of diamond Kátai, Sz.
 2000
 9 3-6 p. 317-321
5 p.
 artikel
119 Ion polishing of a diamond (100) surface artificially roughened on the nanoscale Koslowski, B.
 2000
 9 3-6 p. 1159-1163
5 p.
 artikel
120 Lift-off technology for SiC UV detectors Badila, M.
 2000
 9 3-6 p. 994-997
4 p.
 artikel
121 Lithium addition during CVD diamond growth: influence on the optical emission of the plasma and properties of the films Sternschulte, H.
 2000
 9 3-6 p. 1046-1050
5 p.
 artikel
122 Low-compensated boron-doped homoepitaxial diamond films Yamanaka, S
 2000
 9 3-6 p. 956-959
4 p.
 artikel
123 Low field electron emission from nanoclustered carbon grown by cathodic arc Satyanarayana, B.S.
 2000
 9 3-6 p. 1213-1217
5 p.
 artikel
124 Low temperature growth of gallium nitride Young, W.T.
 2000
 9 3-6 p. 456-459
4 p.
 artikel
125 Measurement and mapping of very low optical absorption of CVD diamond IR windows Meykens, K.
 2000
 9 3-6 p. 1021-1025
5 p.
 artikel
126 Measurement of hydrogen content in ultrathin diamond-like carbon films using low-energy elastic recoil detection analysis Konishi, Y.
 2000
 9 3-6 p. 746-751
6 p.
 artikel
127 Mechanisms of nitrogen aggregation in nickel- and cobalt-containing synthetic diamonds Nadolinny, V.A.
 2000
 9 3-6 p. 883-886
4 p.
 artikel
128 Microcrystalline diamond films by direct ion beam deposition Feng, J.Y.
 2000
 9 3-6 p. 872-876
5 p.
 artikel
129 Microelectrical characterisation of diamond films: an attempt to understand the structural influence on electrical transport phenomena Pereira, L.
 2000
 9 3-6 p. 1061-1065
5 p.
 artikel
130 Micromechanism of polycrystalline cemented diamond tool wear during milling of wood-based materials Miklaszewski, S.
 2000
 9 3-6 p. 1125-1128
4 p.
 artikel
131 Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE) Lahreche, H
 2000
 9 3-6 p. 452-455
4 p.
 artikel
132 Microstructural characterization of diamond films deposited on c-BN crystals Nistor, L.
 2000
 9 3-6 p. 269-273
5 p.
 artikel
133 Microstructure analysis of CN-based nanocage materials by high-resolution electron microscopy Oku, Takeo
 2000
 9 3-6 p. 906-910
5 p.
 artikel
134 Modeling of gas phase nucleation during silicon carbide chemical vapor deposition Vorob'ev, A.N.
 2000
 9 3-6 p. 472-475
4 p.
 artikel
135 Model of morphology evolution in the growth of polycrystalline β-SiC films Yun, Jungheum
 2000
 9 3-6 p. 439-445
7 p.
 artikel
136 Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode Daudin, B.
 2000
 9 3-6 p. 506-511
6 p.
 artikel
137 Molybdenum-containing carbon films deposited using the screen grid technique in an electron cyclotron resonance chemical vapor deposition system Huang, Q.F
 2000
 9 3-6 p. 534-538
5 p.
 artikel
138 Multiwalled carbon nanotubes prepared by hydrogen arc Ando, Y.
 2000
 9 3-6 p. 847-851
5 p.
 artikel
139 Nano-diamond films deposited by direct current glow discharge assisted chemical vapor deposition Heiman, A.
 2000
 9 3-6 p. 866-871
6 p.
 artikel
140 New approach to understanding the reactive magnetron sputtering of hard carbon nitride films Vlček, Jaroslav
 2000
 9 3-6 p. 582-586
5 p.
 artikel
141 New paramagnetic centers in annealed high-pressure synthetic diamond Neves, A.J.
 2000
 9 3-6 p. 1057-1060
4 p.
 artikel
142 NEXAFS spectroscopy of crystalline and ion beam irradiated diamond surfaces Laikhtman, A
 2000
 9 3-6 p. 1026-1031
6 p.
 artikel
143 Nitridation of a diamond film using 300–700 eV N + 2 ion beams Kusunoki, I.
 2000
 9 3-6 p. 698-702
5 p.
 artikel
144 Nitrogenated carbon films deposited using filtered cathodic arc Druz, B.
 2000
 9 3-6 p. 668-674
7 p.
 artikel
145 Nitrogen-doped diamond films selected-area deposition by the plasma-enhanced chemical vapor deposition process Perng, Kuoguang
 2000
 9 3-6 p. 358-363
6 p.
 artikel
146 Non-equilibrium acoustic phonon propagation in CVD diamond films Sharkov, A.I
 2000
 9 3-6 p. 1100-1103
4 p.
 artikel
147 Nucleation and growth of diamond films on single crystal and polycrystalline tungsten substrates Whitfield, Michael D.
 2000
 9 3-6 p. 262-268
7 p.
 artikel
148 OES study of the plasma during CVD diamond growth using CCl4/H2/O2 mixtures Ferreira, N.G.
 2000
 9 3-6 p. 368-372
5 p.
 artikel
149 On the microstructural, optical and mechanical properties of hydrogenated amorphous carbon films deposited in electron cyclotron resonance plasma Durand-Drouhin, O.
 2000
 9 3-6 p. 752-755
4 p.
 artikel
150 On the structure of argon assisted amorphous carbon films Lacerda, R.G.
 2000
 9 3-6 p. 796-800
5 p.
 artikel
151 Optical emission spectroscopic studies of microwave enhanced diamond CVD using CH4/CO2 plasmas Elliott, M.A.
 2000
 9 3-6 p. 311-316
6 p.
 artikel
152 Optical performance of chemically vapour-deposited diamond at infrared wavelengths Pickles, C.S.J.
 2000
 9 3-6 p. 916-920
5 p.
 artikel
153 Optical properties and new vibrational modes in carbon films Gioti, M.
 2000
 9 3-6 p. 741-745
5 p.
 artikel
154 Oxidative etching of diamond de Theije, F.K
 2000
 9 3-6 p. 929-934
6 p.
 artikel
155 Parametric study of bias-enhanced nucleation of diamond on platinum in microwave plasma Tachibana, Takeshi
 2000
 9 3-6 p. 251-255
5 p.
 artikel
156 Performance of CVD diamond as a thermoluminescent dosemeter Benabdesselam, M
 2000
 9 3-6 p. 1013-1016
4 p.
 artikel
157 Persistent photocurrents in CVD diamond Nebel, C.E.
 2000
 9 3-6 p. 404-407
4 p.
 artikel
158 Phosphorus-doped chemical vapor deposition of diamond Koizumi, Satoshi
 2000
 9 3-6 p. 935-940
6 p.
 artikel
159 Photoelectron emission characteristics of diamond near the band gap Cui, J.B.
 2000
 9 3-6 p. 1036-1040
5 p.
 artikel
160 Photo-induced deep level analysis in undoped CVD diamond films Bruzzi, M.
 2000
 9 3-6 p. 1081-1085
5 p.
 artikel
161 Photoluminescence and infra-red absorption of hydrogenated amorphous CN x films Mutsukura, Nobuki
 2000
 9 3-6 p. 761-764
4 p.
 artikel
162 Photoluminescence microscopy of TEM irradiated diamond Steeds, J.W.
 2000
 9 3-6 p. 397-403
7 p.
 artikel
163 Pin-on-disk characterization of amorphous carbon films prepared by filtered cathodic vacuum arc technique Tay, B.K.
 2000
 9 3-6 p. 819-824
6 p.
 artikel
164 Precision micromachining of CVD diamond films Park, J.K
 2000
 9 3-6 p. 1154-1158
5 p.
 artikel
165 Preparation of CNSi x using a RF hollow cathode Muhl, Stephen
 2000
 9 3-6 p. 530-533
4 p.
 artikel
166 Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition Polo, M.C.
 2000
 9 3-6 p. 663-667
5 p.
 artikel
167 Preparation of thick GaN layers by chemical vapour deposition for contact reaction investigations Ucakar, V
 2000
 9 3-6 p. 464-466
3 p.
 artikel
168 Properties of electron field emitters prepared by selected area deposition of CVD diamond carbon films Fox, N.A.
 2000
 9 3-6 p. 1263-1269
7 p.
 artikel
169 Protective diamond-like coatings for optical materials and electronic devices Novikov, N.V.
 2000
 9 3-6 p. 792-795
4 p.
 artikel
170 Quantifying CVD diamond growth and morphology: a useful technique for studying growth kinetics Rigby, S.D.
 2000
 9 3-6 p. 328-332
5 p.
 artikel
171 Raman and photoluminescence spectra of indented cubic boron nitride and polycrystalline cubic boron nitride Erasmus, R.M.
 2000
 9 3-6 p. 600-604
5 p.
 artikel
172 Recent advances in electrochemistry of diamond Rao, T.N.
 2000
 9 3-6 p. 384-389
6 p.
 artikel
173 RF plasma selective etching of boron nitride films Werbowy, A.
 2000
 9 3-6 p. 609-613
5 p.
 artikel
174 Roles of nitrogen and boron hydride adsorptions on silicon (001) substrate in boron nitride growth Zhang, R.Q.
 2000
 9 3-6 p. 596-599
4 p.
 artikel
175 Selective etching of boron nitride phases Sachdev, H.
 2000
 9 3-6 p. 614-619
6 p.
 artikel
176 Semiconducting hydrogenated carbon–nitrogen alloys with low defect densities Anguita, J.V.
 2000
 9 3-6 p. 777-780
4 p.
 artikel
177 Spectroscopy of defects and transition metals in diamond Collins, A.T.
 2000
 9 3-6 p. 417-423
7 p.
 artikel
178 Stability of carbon nitride films prepared from volatile CN species via atomic transport reactions Popov, C.
 2000
 9 3-6 p. 539-543
5 p.
 artikel
179 Structural and mechanical properties of CN x thin films prepared by magnetron sputtering Kurt, R.
 2000
 9 3-6 p. 566-572
7 p.
 artikel
180 Structural changes in CVD diamond film by boron and nitrogen doping Show, Yoshiyuki
 2000
 9 3-6 p. 337-340
4 p.
 artikel
181 Structure and defects of detonation synthesis nanodiamond Iakoubovskii, K.
 2000
 9 3-6 p. 861-865
5 p.
 artikel
182 Studies of carbon ion self-implantation into hydrogenated amorphous carbon films Khan, R.U.A.
 2000
 9 3-6 p. 675-679
5 p.
 artikel
183 Studies of phosphorus doped diamond-like carbon films Kuo, M-T.
 2000
 9 3-6 p. 1222-1227
6 p.
 artikel
184 Substrate surface temperature as a decisive parameter for diamond-like carbon film adhesion to polyethylene substrates Trakhtenberg, I.Sh
 2000
 9 3-6 p. 711-714
4 p.
 artikel
185 Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties Nishitani-Gamo, Mikka
 2000
 9 3-6 p. 941-947
7 p.
 artikel
186 Surface micromachined diamond microswitch Ertl, S.
 2000
 9 3-6 p. 970-974
5 p.
 artikel
187 Tailoring of the field emission properties of hydrogenated amorphous carbon thin films by nitrogen incorporation and thermal annealing Forrest, R.D.
 2000
 9 3-6 p. 1205-1208
4 p.
 artikel
188 Temperature dependent spectroscopic study of the electronic structure of phosphorus in n-type CVD diamond films Haenen, K.
 2000
 9 3-6 p. 952-955
4 p.
 artikel
189 Temperature stability of C–N/NbN nanocomposite multilayers Sobota, J.
 2000
 9 3-6 p. 587-591
5 p.
 artikel
190 Tetrahedral amorphous carbon–silicon heterojunction band energy offsets Rupesinghe, N.L.
 2000
 9 3-6 p. 1148-1153
6 p.
 artikel
191 The control of BN and BC bonds in BCN films synthesized using pulsed laser deposition Wada, Y
 2000
 9 3-6 p. 620-624
5 p.
 artikel
192 The dielectric behaviour of commercial polycrystalline aluminium nitride González, M
 2000
 9 3-6 p. 467-471
5 p.
 artikel
193 The effect of nitrogen on competitive growth mechanisms of diamond thin films Ayres, V.M
 2000
 9 3-6 p. 236-240
5 p.
 artikel
194 The effect of substrate and DLC morphology on the tribological properties coating Vladimirov, A.B.
 2000
 9 3-6 p. 838-842
5 p.
 artikel
195 The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds Babich, Y.V
 2000
 9 3-6 p. 893-896
4 p.
 artikel
196 The mechanism of destruction of a-C:H films under the action of aggressive liquids Novikov, N.V.
 2000
 9 3-6 p. 843-846
4 p.
 artikel
197 The nature of radiation damage in diamond: activation of oxygen donors Prins, Johan F.
 2000
 9 3-6 p. 1275-1281
7 p.
 artikel
198 Theoretical study of chemical reactions on CVD diamond surfaces Oleinik, I.I.
 2000
 9 3-6 p. 241-245
5 p.
 artikel
199 Thermally stimulated properties of CVD diamond films Briand, D
 2000
 9 3-6 p. 1245-1248
4 p.
 artikel
200 Thermal properties of diamond/carbon composites Vlasov, A.
 2000
 9 3-6 p. 1104-1109
6 p.
 artikel
201 The role of hydrogen and oxygen gas in the growth of carbon thin films by pulsed laser deposition Yoshitake, Tsuyoshi
 2000
 9 3-6 p. 689-692
4 p.
 artikel
202 Titanium containing DLC coatings from a PACVD process using titanium (IV) isopropylate as a precursor Töwe, Matthias
 2000
 9 3-6 p. 811-814
4 p.
 artikel
203 Towards homogeneous and reproducible highly oriented diamond films Saada, S.
 2000
 9 3-6 p. 300-304
5 p.
 artikel
204 Transformation of carbon onions to diamond by low-temperature heat treatment in air Tomita, Satoshi
 2000
 9 3-6 p. 856-860
5 p.
 artikel
205 Transient photo-response and residual field measurements in CVD diamond Marshall, J.M.
 2000
 9 3-6 p. 408-412
5 p.
 artikel
206 Transmission electron microscopy study of diamond nucleation and growth on smooth silicon surfaces coated with a thin amorphous carbon film Komvopoulos, K.
 2000
 9 3-6 p. 274-282
9 p.
 artikel
207 Tribological performance of metal doped diamond-like carbon films deposited by cathodic arc evaporation Wang, Da-Yung
 2000
 9 3-6 p. 831-837
7 p.
 artikel
208 Ultra-high resolution electron microscopy investigation of growth defects in CVD diamond films: twin interactions and fivefold twin centres Delclos, S.
 2000
 9 3-6 p. 346-350
5 p.
 artikel
209 Understanding the chemistry of low temperature diamond growth: an investigation into the interaction of chlorine and atomic hydrogen at CVD diamond surfaces Proffitt, Simon
 2000
 9 3-6 p. 246-250
5 p.
 artikel
210 X-ray photoelectron spectroscopy characterization of CN x thin films deposited by electron beam evaporation and nitrogen ion bombardment Petrov, Peter
 2000
 9 3-6 p. 562-565
4 p.
 artikel
                             210 gevonden resultaten
 
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