nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A micro-IBIC comparison between natural and CVD diamond
|
Manfredotti, C. |
|
1997 |
6 |
2-4 |
p. 320-324 5 p. |
artikel |
2 |
Author index
|
|
|
1997 |
6 |
2-4 |
p. xvii-xix nvt p. |
artikel |
3 |
Boronated tetrahedral amorphous carbon (ta-C:B)
|
Chhowalla, M. |
|
1997 |
6 |
2-4 |
p. 207-211 5 p. |
artikel |
4 |
Characterization and growth of carbon phases synthesized by high temperature carbon ion implantation into copper
|
Cabioc'h, T. |
|
1997 |
6 |
2-4 |
p. 261-265 5 p. |
artikel |
5 |
Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height
|
Baumann, P.K. |
|
1997 |
6 |
2-4 |
p. 398-402 5 p. |
artikel |
6 |
Characterization of the microstructure of diamond pyramidal microtip emitters
|
Kang, W.P. |
|
1997 |
6 |
2-4 |
p. 403-405 3 p. |
artikel |
7 |
Combined effect of nitrogen and pulsed microwave plasma on diamond growth
|
Chatei, Hassan |
|
1997 |
6 |
2-4 |
p. 505-510 6 p. |
artikel |
8 |
Conference calendar
|
|
|
1997 |
6 |
2-4 |
p. xv-xvi nvt p. |
artikel |
9 |
Deposition of CVD diamond onto boron carbide substrates
|
May, P.W. |
|
1997 |
6 |
2-4 |
p. 450-455 6 p. |
artikel |
10 |
Design-to-implementation case studies of CVD diamond in r.f./microwave package and detector applications
|
Gray, K.J. |
|
1997 |
6 |
2-4 |
p. 191-195 5 p. |
artikel |
11 |
Diamond coatings for IR window applications
|
Miller, A.J. |
|
1997 |
6 |
2-4 |
p. 386-389 4 p. |
artikel |
12 |
Diamond deposition in a microwave electrode discharge at reduced pressures
|
Bárdoš, L. |
|
1997 |
6 |
2-4 |
p. 224-229 6 p. |
artikel |
13 |
Diamond deposition on noble metals
|
Kalss, W. |
|
1997 |
6 |
2-4 |
p. 240-246 7 p. |
artikel |
14 |
Diamond growth chemistry: Its observation using real time in situ molecular beam scattering techniques
|
Loh, K.P. |
|
1997 |
6 |
2-4 |
p. 219-223 5 p. |
artikel |
15 |
Diamond growth in a direct-current low-pressure supersonic plasmajet
|
Laimer, J. |
|
1997 |
6 |
2-4 |
p. 406-410 5 p. |
artikel |
16 |
Diamond growth on a large area and some aspects of diamond nucleation
|
Samokhvalov, N.V. |
|
1997 |
6 |
2-4 |
p. 426-429 4 p. |
artikel |
17 |
Diamond nucleation enhancement by hydrofluoric acid etching of silicon substrate
|
Schelz, S. |
|
1997 |
6 |
2-4 |
p. 440-443 4 p. |
artikel |
18 |
Effect of surface species concentrations and temperature on diamond film morphology in inductively coupled r.f. plasma CVD
|
Lindsay, J.W. |
|
1997 |
6 |
2-4 |
p. 481-485 5 p. |
artikel |
19 |
Effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy of diamond with pure methane
|
Nishimori, Toshihiko |
|
1997 |
6 |
2-4 |
p. 463-467 5 p. |
artikel |
20 |
Effects of Mo(CO)6 and W(CO)6 introduced to plasma on diamond synthesis by microwave plasma CVD
|
Nagano, Masamitsu |
|
1997 |
6 |
2-4 |
p. 501-504 4 p. |
artikel |
21 |
Effects of simultaneous boron and nitrogen addition on hot-filament CVD diamond growth
|
Hartmann, P. |
|
1997 |
6 |
2-4 |
p. 456-462 7 p. |
artikel |
22 |
Electronic structure of diamond-like carbon
|
Robertson, J. |
|
1997 |
6 |
2-4 |
p. 212-218 7 p. |
artikel |
23 |
Energy distribution of H atom and C2 radical during diamond growth in H2/ArCH4O2 plasma
|
Mitsuda, Yoshitaka |
|
1997 |
6 |
2-4 |
p. 468-471 4 p. |
artikel |
24 |
Enhanced deposition rate of diamond in atmospheric pressure plasma CVD: Effects of a secondary discharge
|
Baldwin Jr., Scott K. |
|
1997 |
6 |
2-4 |
p. 202-206 5 p. |
artikel |
25 |
Enhancement/depletion MESFETs of diamond and their logic circuits
|
Hokazono, A. |
|
1997 |
6 |
2-4 |
p. 339-343 5 p. |
artikel |
26 |
ESR studies of incorporation of phosphorus into high-pressure synthetic diamond
|
Isoya, J. |
|
1997 |
6 |
2-4 |
p. 356-360 5 p. |
artikel |
27 |
Evaluation of diamond-like carbon-coated orthopaedic implants
|
Dowling, D.P. |
|
1997 |
6 |
2-4 |
p. 390-393 4 p. |
artikel |
28 |
Examination of the effects of nitrogen on the CVD diamond growth mechanism using in situ molecular beam mass spectrometry
|
Tsang, R.S. |
|
1997 |
6 |
2-4 |
p. 247-254 8 p. |
artikel |
29 |
Features of diamond deposition on modified silica glass substrates
|
Terranova, M.L. |
|
1997 |
6 |
2-4 |
p. 444-449 6 p. |
artikel |
30 |
Formation of an oriented β-SiC layer during the initial growth phase of diamond on silicon (100)
|
Maillard-Schaller, E. |
|
1997 |
6 |
2-4 |
p. 282-285 4 p. |
artikel |
31 |
Formation of nanocrystalline diamond by hydrocarbon plasma beam deposition
|
Sattel, S. |
|
1997 |
6 |
2-4 |
p. 255-260 6 p. |
artikel |
32 |
Free-standing diamond film preparation using copper substrate
|
Fan, Qi Hua |
|
1997 |
6 |
2-4 |
p. 422-425 4 p. |
artikel |
33 |
Growth, doping and characterization of Al x Ga1 − x N thin film alloys on 6H-SiC(0001) substrates
|
Bremser, M.D. |
|
1997 |
6 |
2-4 |
p. 196-201 6 p. |
artikel |
34 |
Growth of diamond films from a continuous or interrupted CF4 supply
|
Lee, J.-J. |
|
1997 |
6 |
2-4 |
p. 511-515 5 p. |
artikel |
35 |
H actinometry with CF4 addition in microwave plasma-assisted chemical vapor deposition of diamond
|
Ferreira, N.G. |
|
1997 |
6 |
2-4 |
p. 472-475 4 p. |
artikel |
36 |
Heteroepitaxial diamond growth process on platinum (111)
|
Tachibana, Takeshi |
|
1997 |
6 |
2-4 |
p. 266-271 6 p. |
artikel |
37 |
High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor
|
Pang, Lisa Y.S. |
|
1997 |
6 |
2-4 |
p. 333-338 6 p. |
artikel |
38 |
High temperature Young's modulus of polycrystalline diamond
|
Werner, M. |
|
1997 |
6 |
2-4 |
p. 344-347 4 p. |
artikel |
39 |
High-voltage Schottky diode on epitaxial diamond layer
|
Ebert, W. |
|
1997 |
6 |
2-4 |
p. 329-332 4 p. |
artikel |
40 |
Hydrogen-related gap states in the near surface of chemical vapor deposited homoepitaxial diamond films
|
Hayashi, Kazushi |
|
1997 |
6 |
2-4 |
p. 303-307 5 p. |
artikel |
41 |
Initial results of a novel pre-deposition seeding technique for achieving an ultra-high nucleation density for CVD diamond growth
|
Malshe, A.P. |
|
1997 |
6 |
2-4 |
p. 430-434 5 p. |
artikel |
42 |
Insulating diamond coatings on tungsten electrodes
|
Matthée, Th. |
|
1997 |
6 |
2-4 |
p. 293-297 5 p. |
artikel |
43 |
Investigation of the c-BN/h-BN phase transformation at normal pressure
|
Sachdev, H. |
|
1997 |
6 |
2-4 |
p. 286-292 7 p. |
artikel |
44 |
Large-area diamond deposition by microwave plasma
|
Ralchenko, V.G. |
|
1997 |
6 |
2-4 |
p. 417-421 5 p. |
artikel |
45 |
Lithium addition during CVD diamond deposition using lithium tert.-butanolat as precursor
|
Sachdev, H |
|
1997 |
6 |
2-4 |
p. 494-500 7 p. |
artikel |
46 |
Low pressure polymer precursor process for synthesis of hard glassy carbon and diamond films
|
Sun, Z. |
|
1997 |
6 |
2-4 |
p. 230-234 5 p. |
artikel |
47 |
Mass spectrometry and diamond growth from CCl 4 H 2 gas mixtures
|
Mendes de Barros, R.C. |
|
1997 |
6 |
2-4 |
p. 490-493 4 p. |
artikel |
48 |
Mechanisms of CVD diamond nucleation and growth on mechanically scratched and virgin Si(100) surfaces
|
Demuynck, L. |
|
1997 |
6 |
2-4 |
p. 235-239 5 p. |
artikel |
49 |
Neutron damage of CVD diamond
|
Allers, L. |
|
1997 |
6 |
2-4 |
p. 353-355 3 p. |
artikel |
50 |
Nitrogen doping of diamond by ion implantation
|
Kalish, R. |
|
1997 |
6 |
2-4 |
p. 516-520 5 p. |
artikel |
51 |
On the development of CVD diamond film morphology due to the twinning on {111} surfaces
|
Knuyt, G. |
|
1997 |
6 |
2-4 |
p. 435-439 5 p. |
artikel |
52 |
On the mechanical integrity ratio of diamond coatings
|
Brookes, C.A. |
|
1997 |
6 |
2-4 |
p. 348-352 5 p. |
artikel |
53 |
Optimization of MW-PACVD diamond deposition parameters for high nucleation density and growth rate on Si3N4 substrate
|
Buchkremer-Hermanns, H. |
|
1997 |
6 |
2-4 |
p. 411-416 6 p. |
artikel |
54 |
Photoconductive properties of thin film diamond
|
McKeag, Robert D. |
|
1997 |
6 |
2-4 |
p. 374-380 7 p. |
artikel |
55 |
Photoelectrical characteristics of diamond UV detectors: Dependence on device design and film quality
|
Salvatori, S. |
|
1997 |
6 |
2-4 |
p. 361-366 6 p. |
artikel |
56 |
Piezoresistive property of CVD diamond films
|
Deguchi, Masahiro |
|
1997 |
6 |
2-4 |
p. 367-373 7 p. |
artikel |
57 |
Preface to the Proceedings of the 7th European Conference on Diamond, Diamond-Like and Related Materials (Diamond Films '96), Tours, France, September 8–13, 1996
|
Angus, John C. |
|
1997 |
6 |
2-4 |
p. xi- 1 p. |
artikel |
58 |
Radiation hardness of polycrystalline diamond
|
Gonon, P. |
|
1997 |
6 |
2-4 |
p. 314-319 6 p. |
artikel |
59 |
Small scale electronic transport in diamond microcrystals
|
Jaeger, M.D. |
|
1997 |
6 |
2-4 |
p. 325-328 4 p. |
artikel |
60 |
Spatially resolved measurements of absolute CH3 concentration in a hot-filament reactor
|
Wahl, E.H. |
|
1997 |
6 |
2-4 |
p. 476-480 5 p. |
artikel |
61 |
Subject index
|
|
|
1997 |
6 |
2-4 |
p. xx-xxv nvt p. |
artikel |
62 |
Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001)
|
Mizuochi, Y. |
|
1997 |
6 |
2-4 |
p. 277-281 5 p. |
artikel |
63 |
[100]-Textured diamond films for tribological applications
|
Avigal, Y. |
|
1997 |
6 |
2-4 |
p. 381-385 5 p. |
artikel |
64 |
The characterization of single structure diamond heater and temperature sensor
|
Yang, G.S. |
|
1997 |
6 |
2-4 |
p. 394-397 4 p. |
artikel |
65 |
The chemical nature of the carbon precursor in bias-enhanced nucleation of CVD diamond
|
Gouzman, I. |
|
1997 |
6 |
2-4 |
p. 526-531 6 p. |
artikel |
66 |
The diamond Irvin curve
|
Werner, M. |
|
1997 |
6 |
2-4 |
p. 308-313 6 p. |
artikel |
67 |
The influence of boron doping on the structure and characteristics of diamond thin films
|
Liao, X.Z. |
|
1997 |
6 |
2-4 |
p. 521-525 5 p. |
artikel |
68 |
Thermal resistance and electrical insulation of thin low-temperature-deposited diamond films
|
Verhoeven, H. |
|
1997 |
6 |
2-4 |
p. 298-302 5 p. |
artikel |
69 |
The roles of H and O atoms in diamond growth
|
Dementjev, A.P. |
|
1997 |
6 |
2-4 |
p. 486-489 4 p. |
artikel |
70 |
Transmission electron microscope study of heteroepitaxial diamond on Pt (111)
|
Tarutani, Masayoshi |
|
1997 |
6 |
2-4 |
p. 272-276 5 p. |
artikel |