nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An impedance spectroscopy investigation of polycrystalline diamond from dc to 1 GHz
|
Bataineh, Mohannad M. |
|
1997 |
6 |
11 |
p. 1689-1696 8 p. |
artikel |
2 |
a-SiC:H films deposited by PECVD from silane + acetylene and silane + acetylene + hydrogen gas mixture
|
Giorgis, F. |
|
1997 |
6 |
11 |
p. 1606-1611 6 p. |
artikel |
3 |
Author index for volume 6
|
|
|
1997 |
6 |
11 |
p. 1735-1740 6 p. |
artikel |
4 |
Characterization of nucleation and growth of MW-CVD diamond films by spectroscopic ellipsometry and ion beam analysis methods
|
Pintér, I. |
|
1997 |
6 |
11 |
p. 1633-1637 5 p. |
artikel |
5 |
Charge carrier trapping centers in synthetic diamond
|
Romanko, L.A. |
|
1997 |
6 |
11 |
p. 1674-1679 6 p. |
artikel |
6 |
Comparative study of excitonic recombination radiation from diamonds grown by CVD and HP/HT methods
|
Murakami, T. |
|
1997 |
6 |
11 |
p. 1668-1673 6 p. |
artikel |
7 |
Conference calendar
|
|
|
1997 |
6 |
11 |
p. 1733- 1 p. |
artikel |
8 |
Cylindrically symmetric diamond parts by hot-filament CVD
|
Anthony, T.R. |
|
1997 |
6 |
11 |
p. 1707-1715 9 p. |
artikel |
9 |
Diamond film deposition by a substrate-stabilized flat flame
|
Uchida, Kiyoshi |
|
1997 |
6 |
11 |
p. 1599-1605 7 p. |
artikel |
10 |
Diamond seed incorporation by electrochemical treatment of silicon substrate
|
Obraztsov, A.N. |
|
1997 |
6 |
11 |
p. 1629-1632 4 p. |
artikel |
11 |
DLC growth by ion beam assisted deposition: a molecular simulation
|
Fedotov, S.A. |
|
1997 |
6 |
11 |
p. 1638-1642 5 p. |
artikel |
12 |
Excimer laser-induced electron emission from diamond films
|
Pimenov, S.M. |
|
1997 |
6 |
11 |
p. 1650-1657 8 p. |
artikel |
13 |
Growth stages of chemical vapor deposited diamond on the titanium alloy Ti6Al-4V
|
Grögler, T. |
|
1997 |
6 |
11 |
p. 1658-1667 10 p. |
artikel |
14 |
Incorporation of lithium in single crystal diamond: diffusion profiles and optical and electrical properties
|
te Nijenhuis, J. |
|
1997 |
6 |
11 |
p. 1726-1732 7 p. |
artikel |
15 |
Influence of substrate temperature and microwave power on the properties of a-C:H films prepared using the ECR-CVD method
|
Yoon, S.F. |
|
1997 |
6 |
11 |
p. 1683-1688 6 p. |
artikel |
16 |
Ion beam modification of tetrahedral amorphous carbon: the effect of irradiation temperature
|
McCulloch, D.G. |
|
1997 |
6 |
11 |
p. 1622-1628 7 p. |
artikel |
17 |
Measurement of decay time for the NV centre in Ib diamond with a picosecond laser pulse
|
Hanzawa, H. |
|
1997 |
6 |
11 |
p. 1595-1598 4 p. |
artikel |
18 |
Nucleation enhancement behavior of diamond on Si substrate according to surface treatment materials
|
Park, B.S. |
|
1997 |
6 |
11 |
p. 1716-1721 6 p. |
artikel |
19 |
Observation of micro-inclusions in diamond by scanning X-ray analytical microscope
|
Shimomura, S. |
|
1997 |
6 |
11 |
p. 1680-1682 3 p. |
artikel |
20 |
On the {111} <111> penetration twin density in CVD diamond films
|
Knuyt, G. |
|
1997 |
6 |
11 |
p. 1697-1706 10 p. |
artikel |
21 |
Raman and photoluminescence microscopy mapping of CVD micro-diamonds
|
Lippold, G. |
|
1997 |
6 |
11 |
p. 1587-1594 8 p. |
artikel |
22 |
Stiffness, residual stresses and interfacial fracture energy of diamond films on titanium
|
Peng, X.L. |
|
1997 |
6 |
11 |
p. 1612-1621 10 p. |
artikel |
23 |
Subject index
|
|
|
1997 |
6 |
11 |
p. 1741-1742 2 p. |
artikel |
24 |
The aggregation of nitrogen and the formation of A centres in diamonds
|
Kiflawi, I. |
|
1997 |
6 |
11 |
p. 1643-1649 7 p. |
artikel |
25 |
The 0.545 eV center in neutron irradiated and annealed type Ib diamond
|
Mita, Y. |
|
1997 |
6 |
11 |
p. 1722-1725 4 p. |
artikel |