| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study on surface morphologies of (001) homoepitaxial diamond films
|
Lee, Naesung
|
|
1997
|
6 |
1 |
p. 130-145
16 p.
|
artikel
|
| 2 |
Author index
|
|
|
1997
|
6 |
1 |
p. 187-
1 p.
|
artikel
|
| 3 |
Conference calendar
|
|
|
1997
|
6 |
1 |
p. 184-185
2 p.
|
artikel
|
| 4 |
Crystalline quality of highly oriented diamond films grown on 〈100〉 silicon studied by conventional TEM
|
Bozzolo, N.
|
|
1997
|
6 |
1 |
p. 41-47
7 p.
|
artikel
|
| 5 |
Diamond deposition from halogenated methane precursors on Si and SiC substrates
|
Nyberg, T.
|
|
1997
|
6 |
1 |
p. 85-88
4 p.
|
artikel
|
| 6 |
Diamond formation and wettability in a MgCuC system under high pressure and high temperature
|
Andreyev, A.V.
|
|
1997
|
6 |
1 |
p. 28-32
5 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
1997
|
6 |
1 |
p. iii-
1 p.
|
artikel
|
| 8 |
Effect of nitrogen concentration on plasma reactivity and diamond growth in a H2CH4N2 microwave discharge
|
Chatei, Hassan
|
|
1997
|
6 |
1 |
p. 107-119
13 p.
|
artikel
|
| 9 |
Effects of processing conditions on the growth of nanocrystalline diamond thin films: real time spectroscopic ellipsometry studies
|
Hong, Byungyou
|
|
1997
|
6 |
1 |
p. 55-80
26 p.
|
artikel
|
| 10 |
Electrochemical characterization of doped and undoped CVD diamond deposited by microwave plasma
|
Ramesham, R.
|
|
1997
|
6 |
1 |
p. 17-26
10 p.
|
artikel
|
| 11 |
Electron beam-induced current imaging of chemical vapor-deposited diamond films
|
Cremades, A.
|
|
1997
|
6 |
1 |
p. 95-98
4 p.
|
artikel
|
| 12 |
High quality diamond films on WC-Co surfaces
|
Guseva, M.B.
|
|
1997
|
6 |
1 |
p. 89-94
6 p.
|
artikel
|
| 13 |
Hysteresis loop in the current—voltage characteristic of Al/boron-doped polycrystalline diamond Schottky contact
|
Guo, W.H.
|
|
1997
|
6 |
1 |
p. 12-16
5 p.
|
artikel
|
| 14 |
Influence of process parameters on the size of the bias-nucleated area for diamond deposition with plasma-enhanced chemical vapour deposition
|
Lorenz, Hans Peter
|
|
1997
|
6 |
1 |
p. 6-11
6 p.
|
artikel
|
| 15 |
Keyword listing
|
|
|
1997
|
6 |
1 |
p. 182-183
2 p.
|
artikel
|
| 16 |
Liftoff-technique of single-crystal diamond plates: study of the lattice damage of the implanted substrates and the crystalline quality of the homoepitaxial films by ion channelling
|
Samlenski, R.
|
|
1997
|
6 |
1 |
p. 149-152
4 p.
|
artikel
|
| 17 |
LWIR spectral properties of CVD diamond at cryogenic temperatures
|
Clement, R.E.
|
|
1997
|
6 |
1 |
p. 169-171
3 p.
|
artikel
|
| 18 |
Microtribological properties of diamond-like and hydrogenated carbon coatings grown by different methods
|
Snitka, V.
|
|
1997
|
6 |
1 |
p. 1-5
5 p.
|
artikel
|
| 19 |
Microwave power effects on the properties of phosphorus-doped SiC:H films prepared using ECR-CVD
|
Yoon, S.F.
|
|
1997
|
6 |
1 |
p. 48-54
7 p.
|
artikel
|
| 20 |
Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization
|
Nistor, L.C.
|
|
1997
|
6 |
1 |
p. 159-168
10 p.
|
artikel
|
| 21 |
Optical properties and microstructure of CVD diamond films
|
Yin, Z.
|
|
1997
|
6 |
1 |
p. 153-158
6 p.
|
artikel
|
| 22 |
Optical properties of nitrogen-rich carbon films deposited by d.c. magnetron sputtering
|
Friedrich, M.
|
|
1997
|
6 |
1 |
p. 33-40
8 p.
|
artikel
|
| 23 |
Phosphorescence in high-pressure synthetic diamond
|
Watanabe, Kenji
|
|
1997
|
6 |
1 |
p. 99-106
8 p.
|
artikel
|
| 24 |
Pressure dependence of growth mode of HFCVD diamond
|
Yu, Z.
|
|
1997
|
6 |
1 |
p. 81-84
4 p.
|
artikel
|
| 25 |
Stresses generated by inhomogeneous distributions of inclusions in diamonds
|
Anthony, Thomas R.
|
|
1997
|
6 |
1 |
p. 120-129
10 p.
|
artikel
|
| 26 |
Subject index
|
|
|
1997
|
6 |
1 |
p. 188-190
3 p.
|
artikel
|
| 27 |
The irradiation and annealing of Si-doped diamond single crystals
|
Kiflawi, I.
|
|
1997
|
6 |
1 |
p. 146-148
3 p.
|
artikel
|
| 28 |
Thermodynamic properties of 13C-diamond
|
Polyakov, V.B.
|
|
1997
|
6 |
1 |
p. 172-177
6 p.
|
artikel
|
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