nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Ab initio study of hydrocarbons on diamond (111)
|
Larsson, K. |
|
1993 |
|
5-7 |
p. 949-951 3 p. |
artikel |
2 |
Adhesion improvement of diamond films on steel subtrates using chromium nitride interlayers
|
Glozman, O. |
|
1997 |
|
5-7 |
p. 796-801 6 p. |
artikel |
3 |
Aerosol doping of flame-grown diamond films
|
Doverspike, Kathleen |
|
1993 |
|
5-7 |
p. 1078-1082 5 p. |
artikel |
4 |
AES and XPS observations of HFCVD diamond deposition on monocrystalline (111) copper
|
Constant, L. |
|
1997 |
|
5-7 |
p. 664-667 4 p. |
artikel |
5 |
A multilayer approach to high adhesion diamond-like carbon coatings on titanium
|
Dumkum, C. |
|
1997 |
|
5-7 |
p. 802-806 5 p. |
artikel |
6 |
Analysis and modeling of diamond heterogeneous nucleation kinetics
|
Ascarelli, P. |
|
1993 |
|
5-7 |
p. 990-996 7 p. |
artikel |
7 |
Analysis of chemical-vapour-deposited diamond grain boundaries using transmission electron microscopy and parallel electron energy loss spectroscopy in a scanning transmission electron microscope
|
Fallon, P.J. |
|
1993 |
|
5-7 |
p. 1004-1011 8 p. |
artikel |
8 |
Application of diamond substrates for advanced high density packaging
|
Eden, Richard C. |
|
1993 |
|
5-7 |
p. 1051-1058 8 p. |
artikel |
9 |
A simple and sensitive way to determine carbon film thickness
|
Bentzon, M.D. |
|
1993 |
|
5-7 |
p. 893-897 5 p. |
artikel |
10 |
A two-step process for the formation of a Mo2C contact on polycrystalline diamond films
|
Lucazeau, E. |
|
1997 |
|
5-7 |
p. 843-846 4 p. |
artikel |
11 |
Author index
|
|
|
1993 |
|
5-7 |
p. 1115-1116 2 p. |
artikel |
12 |
Author index
|
|
|
1997 |
|
5-7 |
p. 915-918 4 p. |
artikel |
13 |
Behaviour of Co binder phase during diamond deposition on WCCo substrate
|
Park, B.S. |
|
1993 |
|
5-7 |
p. 910-917 8 p. |
artikel |
14 |
Biased enhanced nucleation of diamond on metals: an OES and electrical investigation
|
Whitfield, Michael D. |
|
1997 |
|
5-7 |
p. 658-663 6 p. |
artikel |
15 |
Calorimetric absorption spectroscopy and photoluminescence study of defects in diamond
|
Bilodeau, T.G. |
|
1993 |
|
5-7 |
p. 699-703 5 p. |
artikel |
16 |
Capacitance-voltage measurements on metal-SiO2-boron-doped homoepitaxial diamond
|
Inushima, T. |
|
1997 |
|
5-7 |
p. 852-855 4 p. |
artikel |
17 |
Carrier transport mechanisms through the metal/p-type diamond semiconductor interface
|
Koide, Y. |
|
1997 |
|
5-7 |
p. 847-851 5 p. |
artikel |
18 |
Catalytic interaction of Fe, Ni and Pt with diamond films: patterning applications
|
Ralchenko, V.G. |
|
1993 |
|
5-7 |
p. 904-909 6 p. |
artikel |
19 |
Cathodoluminescence of epitaxial diamond films
|
Fujimori, Naoji |
|
1993 |
|
5-7 |
p. 762-767 6 p. |
artikel |
20 |
Cathodoluminescence spectroscopy of synthetic diamond films
|
Marinelli, M. |
|
1997 |
|
5-7 |
p. 717-720 4 p. |
artikel |
21 |
C-BN thin film formation in a hybrid r.f.-PLD technique
|
Klotzbücher, T. |
|
1997 |
|
5-7 |
p. 599-603 5 p. |
artikel |
22 |
Characterization and optimization of mid-frequency plasma-enhanced chemical vapour deposited carbon films using response surface methodology
|
Wächter, R. |
|
1997 |
|
5-7 |
p. 537-541 5 p. |
artikel |
23 |
Characterization of diamond films deposited using C3H6OxH2 gas mixtures
|
Chen, Chia-Fu |
|
1993 |
|
5-7 |
p. 732-736 5 p. |
artikel |
24 |
Characterization of diamond films for optical coatings
|
Ko, Hsien-Wen |
|
1993 |
|
5-7 |
p. 694-698 5 p. |
artikel |
25 |
Characterization of laser-irradiated surfaces of a polycrystalline diamond film with an atomic force microscope
|
Bögli, U. |
|
1993 |
|
5-7 |
p. 924-927 4 p. |
artikel |
26 |
Comparison of the electric properties of single-crystal and polycrystalline diamond by hall effect and capacitance-voltage measurements
|
von Windheim, J.A. |
|
1993 |
|
5-7 |
p. 841-846 6 p. |
artikel |
27 |
Comparison of the surface structure of carbon films deposited by different methods
|
Niedzielski, P. |
|
1997 |
|
5-7 |
p. 721-724 4 p. |
artikel |
28 |
Compressive stress induced formation of cubic boron nitride
|
McKenzie, D.R. |
|
1993 |
|
5-7 |
p. 970-976 7 p. |
artikel |
29 |
Conduction in ion-implanted single-crystal diamond
|
Hunn, J.D. |
|
1993 |
|
5-7 |
p. 847-851 5 p. |
artikel |
30 |
Conference calendar
|
|
|
1993 |
|
5-7 |
p. 1125-1127 3 p. |
artikel |
31 |
Conference calendar
|
|
|
1997 |
|
5-7 |
p. 913-914 2 p. |
artikel |
32 |
Correlation of interface chemistry to electrical properties of metal contacts on diamond
|
Tachibana, T. |
|
1993 |
|
5-7 |
p. 963-969 7 p. |
artikel |
33 |
Cubic boron nitride thin films by tuned r.f. magnetron sputtering
|
Gimeno, S. |
|
1997 |
|
5-7 |
p. 604-607 4 p. |
artikel |
34 |
Cumulative author index
|
|
|
1993 |
|
5-7 |
p. 1129-1132 4 p. |
artikel |
35 |
Cumulative subject index
|
|
|
1993 |
|
5-7 |
p. 1133-1147 15 p. |
artikel |
36 |
CVD diamond growth mechanisms as identified by surface topography
|
van Enckevort, W.J.P. |
|
1993 |
|
5-7 |
p. 997-1003 7 p. |
artikel |
37 |
Defects in chemically vapour-deposited diamond films studied by electron spin resonance and Raman spectroscopy
|
Fabisiak, K. |
|
1993 |
|
5-7 |
p. 722-727 6 p. |
artikel |
38 |
Degenerate four-wave mixing diagnostics of atmospheric pressure diamond deposition
|
Owano, T.G. |
|
1993 |
|
5-7 |
p. 661-666 6 p. |
artikel |
39 |
Degradation mechanisms of passivated and unpassivated diamond thermistors
|
Chalker, P.R. |
|
1993 |
|
5-7 |
p. 1100-1106 7 p. |
artikel |
40 |
Deposition mechanisms for promoting sp3 bonding in diamond-like carbon
|
Robertson, J. |
|
1993 |
|
5-7 |
p. 984-989 6 p. |
artikel |
41 |
Deposition of DLC films in CH4/Ne and CH4/Kr r.f. plasmas
|
Mutsukura, Nobuki |
|
1997 |
|
5-7 |
p. 547-550 4 p. |
artikel |
42 |
Determination of the optical constants of fine grained diamond layers on silicon substrates using curve-fitting procedures
|
Stenzel, O. |
|
1993 |
|
5-7 |
p. 704-707 4 p. |
artikel |
43 |
Determination of the “overall” nucleation density on tungsten: a new treatment of the data
|
Polini, R. |
|
1993 |
|
5-7 |
p. 952-957 6 p. |
artikel |
44 |
Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers
|
Noda, H. |
|
1997 |
|
5-7 |
p. 865-868 4 p. |
artikel |
45 |
Device properties of homoepitaxially grown diamond
|
Landstrass, M.I. |
|
1993 |
|
5-7 |
p. 1033-1037 5 p. |
artikel |
46 |
Diamond deposition by atmospheric pressure induction plasma: effects of impinging jet fluid mechanics on film formation
|
Girshick, S.L. |
|
1993 |
|
5-7 |
p. 1090-1095 6 p. |
artikel |
47 |
Diamond device delineation via excimer laser patterning
|
Johnston, C. |
|
1993 |
|
5-7 |
p. 829-834 6 p. |
artikel |
48 |
Diamond fibre metal matrix composites
|
Meaden, G. |
|
1997 |
|
5-7 |
p. 898-901 4 p. |
artikel |
49 |
Diamond fibres by a hot filament CVD process
|
Griffith, P.W. |
|
1997 |
|
5-7 |
p. 822-825 4 p. |
artikel |
50 |
Diamond-infiltrated carbon-carbon composites
|
Ting, J.-M. |
|
1993 |
|
5-7 |
p. 1069-1077 9 p. |
artikel |
51 |
Diamond-like carbon metal-semiconductor-metal switches for active matrix displays
|
Egret, S. |
|
1997 |
|
5-7 |
p. 879-883 5 p. |
artikel |
52 |
Diamond-metal composite coatings on cemented-carbide tools
|
Tsai, C. |
|
1993 |
|
5-7 |
p. 617-620 4 p. |
artikel |
53 |
Diamond metal-semiconductor-metal ultraviolet photodetectors
|
Binari, S.C. |
|
1993 |
|
5-7 |
p. 1020-1023 4 p. |
artikel |
54 |
Diamond nucleation on silicon during bias treatment in chemical vapour deposition as analysed by electron microscopy
|
Stammler, M. |
|
1997 |
|
5-7 |
p. 747-751 5 p. |
artikel |
55 |
Diamond radiation detectors
|
Kania, D.R. |
|
1993 |
|
5-7 |
p. 1012-1019 8 p. |
artikel |
56 |
Diamond synthesis on a metal substrate
|
Kawarada, M. |
|
1993 |
|
5-7 |
p. 1083-1089 7 p. |
artikel |
57 |
Diamond windows for IR applications in adverse environments
|
Klein, Claude A. |
|
1993 |
|
5-7 |
p. 1024-1032 9 p. |
artikel |
58 |
Distribution of the cobalt-related luminescence center in HPHT diamond
|
Kanda, H. |
|
1997 |
|
5-7 |
p. 708-711 4 p. |
artikel |
59 |
Effect of boron incorporation on the “quality” of MPCVD diamond films
|
Gheeraert, E. |
|
1993 |
|
5-7 |
p. 742-745 4 p. |
artikel |
60 |
Effect of boron incorporation on the structure of polycrystalline diamond films
|
Brunet, F. |
|
1997 |
|
5-7 |
p. 774-777 4 p. |
artikel |
61 |
Effect of negative bias voltage on a-C:H films deposited in electron cyclotron resonance plasma
|
Zarrabian, M. |
|
1997 |
|
5-7 |
p. 542-546 5 p. |
artikel |
62 |
Effect of substrate pretreatment on diamond deposition
|
Maeda, Hideaki |
|
1993 |
|
5-7 |
p. 758-761 4 p. |
artikel |
63 |
Effects of diamond-like hydrocarbon films on rolling contact fatigue of bearing steels
|
Wei, Ronghua |
|
1993 |
|
5-7 |
p. 898-903 6 p. |
artikel |
64 |
Elastic characteristics of diamond-like carbon coatings
|
Strel'nitskij, V.E. |
|
1993 |
|
5-7 |
p. 869-872 4 p. |
artikel |
65 |
Elastic properties of polycrystalline cubic boron nitride and diamond by dynamic resonance measurements
|
D'Evelyn, Mark P. |
|
1997 |
|
5-7 |
p. 812-816 5 p. |
artikel |
66 |
Elastic properties of thin polycrystalline diamond films
|
Werner, M. |
|
1993 |
|
5-7 |
p. 939-942 4 p. |
artikel |
67 |
Elastic scattering of light and reflectivity development during low pressure diamond film growth
|
Mathis, B.S. |
|
1993 |
|
5-7 |
p. 718-721 4 p. |
artikel |
68 |
Electrical conduction in polycrystalline diamond and the effects of UV irradiation
|
Gonon, P. |
|
1997 |
|
5-7 |
p. 860-864 5 p. |
artikel |
69 |
Electrical conduction mechanisms in polycrystalline chemically vapour-deposited diamond films
|
Sugino, Takashi |
|
1993 |
|
5-7 |
p. 797-802 6 p. |
artikel |
70 |
Electrical properties of diamond-like CSi heterojunctions manufactured under ultraclean conditions
|
Beck, R.B. |
|
1993 |
|
5-7 |
p. 788-792 5 p. |
artikel |
71 |
Electrical properties of high quality diamond films
|
Pan, L.S. |
|
1993 |
|
5-7 |
p. 820-824 5 p. |
artikel |
72 |
Electrical properties of undoped large-grain and small-grain diamond films
|
Huang, Bohr-ran |
|
1993 |
|
5-7 |
p. 812-815 4 p. |
artikel |
73 |
Electron emission characteristics of metal/diamond field emitters
|
Sugino, Takashi |
|
1997 |
|
5-7 |
p. 889-892 4 p. |
artikel |
74 |
Electron energy loss study of diamond-like and amorphous carbon films
|
Maydell, E.A. |
|
1993 |
|
5-7 |
p. 873-878 6 p. |
artikel |
75 |
Electronic and atomic structure of undoped and doped ta-C films
|
Ronning, C. |
|
1997 |
|
5-7 |
p. 830-834 5 p. |
artikel |
76 |
Electronic and structural properties of the interface between c-Si(111) and diamond-like carbon
|
Schäfer, J. |
|
1997 |
|
5-7 |
p. 730-735 6 p. |
artikel |
77 |
Enhancing low field electron emission from polycrystalline diamond
|
Baral, Bhaswar |
|
1997 |
|
5-7 |
p. 869-873 5 p. |
artikel |
78 |
Etching of graphite and diamond by thermal energy hydrogen atoms
|
Donnelly, C.M. |
|
1997 |
|
5-7 |
p. 787-790 4 p. |
artikel |
79 |
Evaluation of MPCVD diamond film adhesion on hard metal substrates by micro Raman spectroscopy
|
Fernandes, A. |
|
1997 |
|
5-7 |
p. 769-773 5 p. |
artikel |
80 |
Fabrication of diamond thin-film thermistors for high-temperature applications
|
Bade, J.P. |
|
1993 |
|
5-7 |
p. 816-819 4 p. |
artikel |
81 |
Fabrication of integrated diamond cantilevers with tips for SPM applications
|
Kulisch, W. |
|
1997 |
|
5-7 |
p. 906-911 6 p. |
artikel |
82 |
Fabrication process development and characterization of polycrystalline diamond film resistors
|
Edwards, L.M. |
|
1993 |
|
5-7 |
p. 808-811 4 p. |
artikel |
83 |
Factors affecting the fracture strength and Young's modulus of CVD diamond-coated fibres
|
Kalaugher, E. |
|
1997 |
|
5-7 |
p. 826-829 4 p. |
artikel |
84 |
Free-standing white diamond for thermal and optical applications
|
Lu, Grant |
|
1993 |
|
5-7 |
p. 1064-1068 5 p. |
artikel |
85 |
Gap density of states in CVD diamond films from photoconductivity and photoluminescence data
|
Rossi, M.C. |
|
1997 |
|
5-7 |
p. 712-716 5 p. |
artikel |
86 |
Growth and application of cubic SiC
|
Matsunami, Hiroyuki |
|
1993 |
|
5-7 |
p. 1043-1050 8 p. |
artikel |
87 |
Growth and characterisation of boron nitride films: layer sequence and phase identification
|
Plass, M.F. |
|
1997 |
|
5-7 |
p. 594-598 5 p. |
artikel |
88 |
Hard a-C(N):H films obtained from plasma decomposition of methylamine-containing mixtures
|
Lacerda, M.M. |
|
1997 |
|
5-7 |
p. 631-634 4 p. |
artikel |
89 |
Heteroepitaxial diamond growth on (100) silicon
|
Jiang, X. |
|
1993 |
|
5-7 |
p. 1112-1113 2 p. |
artikel |
90 |
High quality homoepitaxial growth of diamond films
|
Vitton, Jean-Pierre |
|
1993 |
|
5-7 |
p. 713-717 5 p. |
artikel |
91 |
HREM and EXELFS investigation of local structure in thin CVD diamond films
|
Dorignac, D. |
|
1997 |
|
5-7 |
p. 758-762 5 p. |
artikel |
92 |
Improvement in IR properties of chemically vapour-deposited diamond films by smoothening with KrF excimer radiation
|
Boudina, A. |
|
1993 |
|
5-7 |
p. 678-682 5 p. |
artikel |
93 |
Improvement of diamond nuclei orientation by double-step bias treatment in microwave plasma-assisted chemical vapor deposition using C2H4 and CH4 as carbon source
|
Saito, Takeyasu |
|
1997 |
|
5-7 |
p. 668-672 5 p. |
artikel |
94 |
Improvement of mechanical properties of a-C:H by silicon addition
|
De Martino, C. |
|
1997 |
|
5-7 |
p. 559-563 5 p. |
artikel |
95 |
Insight on the microscopical structure of a-C and a-C:H thin films through electron spin resonance analysis
|
Fanciulli, M. |
|
1997 |
|
5-7 |
p. 725-729 5 p. |
artikel |
96 |
In-situ Fourier transform IR emission spectroscopy of diamond chemical vapor deposition
|
Spiberg, P. |
|
1993 |
|
5-7 |
p. 708-712 5 p. |
artikel |
97 |
Interfacial analysis of CVD diamond on copper substrates
|
Jiang, N. |
|
1997 |
|
5-7 |
p. 743-746 4 p. |
artikel |
98 |
Internal field emission at metal/diamond contact and performance of thin film field emitters: computer simulation
|
Hattori, Reiji |
|
1997 |
|
5-7 |
p. 884-888 5 p. |
artikel |
99 |
Investigation of diamond-like carbon films for protection and stabilization of selenium-containing photoreceptors in electrophotography
|
Vasiljev, V.V. |
|
1993 |
|
5-7 |
p. 667-669 3 p. |
artikel |
100 |
Investigation of surface preparation for diamond deposition on molybdenum substrates by secondary ion mass spectrometry
|
Steiner, R. |
|
1993 |
|
5-7 |
p. 958-962 5 p. |
artikel |
101 |
Investigation of the boron incorporation in polycrystalline CVD diamond films by TEM, EELS and Raman spectroscopy
|
Wurzinger, P. |
|
1997 |
|
5-7 |
p. 763-768 6 p. |
artikel |
102 |
Investigation of the nucleation layer in c-BN film growth
|
Freudenstein, R. |
|
1997 |
|
5-7 |
p. 584-588 5 p. |
artikel |
103 |
Ion beam modification of diamond
|
Kalish, R. |
|
1993 |
|
5-7 |
p. 621-633 13 p. |
artikel |
104 |
Kinetics of the initial stages of CVD diamond growth on non-diamond substrates: surface catalytic effects and homoepitaxy
|
Chakk, Y. |
|
1997 |
|
5-7 |
p. 681-686 6 p. |
artikel |
105 |
Large-area diamond deposition and brazing of the diamond films on steel substrates for tribological applications
|
Kohzaki, M. |
|
1993 |
|
5-7 |
p. 612-616 5 p. |
artikel |
106 |
Lift-off technique of homoepitaxial CVD diamond films by deep implantation and selective etching
|
Locher, R. |
|
1997 |
|
5-7 |
p. 654-657 4 p. |
artikel |
107 |
Liquid and solid erosion properties of diamond
|
Seward, C.R. |
|
1993 |
|
5-7 |
p. 606-611 6 p. |
artikel |
108 |
Low amplitude oscillating sliding wear on chemically vapour deposited diamond coatings
|
Mohrbacher, H. |
|
1993 |
|
5-7 |
p. 879-884 6 p. |
artikel |
109 |
Low-temperature formation of β-silicon carbide
|
Ulrich, S. |
|
1997 |
|
5-7 |
p. 645-648 4 p. |
artikel |
110 |
Luminescent characterization of radiation damage and impurities in ion-implanted natural diamond
|
Gippius, A.A. |
|
1993 |
|
5-7 |
p. 640-645 6 p. |
artikel |
111 |
Measurement and calculation of the thermal expansion coefficient of diamond
|
Moelle, C. |
|
1997 |
|
5-7 |
p. 839-842 4 p. |
artikel |
112 |
Mechanical and thermophysical properties of diamond-like carbon (DLC) films with different sp 3 sp 2 ratios
|
Demichelis, F. |
|
1993 |
|
5-7 |
p. 890-892 3 p. |
artikel |
113 |
Mechanism of surface smoothing of diamond by a hydrogen plasma
|
Rawles, R.E. |
|
1997 |
|
5-7 |
p. 791-795 5 p. |
artikel |
114 |
Micromechanical properties of diamond films deposited by microwave-plasma-enhanced chemical vapour deposition
|
Garcia, A. |
|
1993 |
|
5-7 |
p. 933-938 6 p. |
artikel |
115 |
Microstructure and growth of MWCVD diamond on Si1 − x C x buffer layers
|
Wittorf, D. |
|
1997 |
|
5-7 |
p. 649-653 5 p. |
artikel |
116 |
Minimization of the defects concentration from boron incorporation in polycrystalline diamond films
|
Colineau, E. |
|
1997 |
|
5-7 |
p. 778-782 5 p. |
artikel |
117 |
Modeling interface structures of cubic boron nitride films deposited heteroepitaxially and via a hexagonal boron nitride interlayer on silicon (001) surfaces
|
Zhang, R.Q. |
|
1997 |
|
5-7 |
p. 589-593 5 p. |
artikel |
118 |
Molecular structure of E-BN
|
Olszyna, A. |
|
1997 |
|
5-7 |
p. 617-620 4 p. |
artikel |
119 |
Nanoscale grinding of ceramics using diamond fibres
|
Partridge, P.G. |
|
1997 |
|
5-7 |
p. 893-897 5 p. |
artikel |
120 |
Nitrogen and iodine doping in amorphous diamond-like carbon films
|
Allon-Alaluf, M. |
|
1997 |
|
5-7 |
p. 555-558 4 p. |
artikel |
121 |
Non-CVD methods of diamond growth at low pressures
|
Prins, Johan F. |
|
1993 |
|
5-7 |
p. 646-655 10 p. |
artikel |
122 |
Nucleation and initial growth of bias-assisted HFCVD diamond on boron nitride films
|
Polo, M.C. |
|
1997 |
|
5-7 |
p. 579-583 5 p. |
artikel |
123 |
OBIC measurements on planar high voltage p+-n junctions with diamond-like carbon films as passivation layer
|
Frischholz, M. |
|
1993 |
|
5-7 |
p. 778-781 4 p. |
artikel |
124 |
Optical and electrical investigation of boron-doped homoepitaxial diamond
|
Ogasawara, A. |
|
1997 |
|
5-7 |
p. 835-838 4 p. |
artikel |
125 |
Optical and electronic properties of amorphous diamond
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Veerasamy, V.S. |
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1993 |
|
5-7 |
p. 782-787 6 p. |
artikel |
126 |
Optical and photoemission studies of DLC films prepared with a systematic variation of the sp3:sp2 composition
|
Lifshitz, Y. |
|
1997 |
|
5-7 |
p. 687-693 7 p. |
artikel |
127 |
Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond
|
Duncan Marshall, R. |
|
1997 |
|
5-7 |
p. 676-680 5 p. |
artikel |
128 |
PACVD nano-crystalline BCN thin films obtained by use of an organoboron precursor
|
Loeffler, J. |
|
1997 |
|
5-7 |
p. 608-611 4 p. |
artikel |
129 |
Paramagnetic centres in tetrahedral amorphous carbon
|
Fusco, G. |
|
1997 |
|
5-7 |
p. 783-786 4 p. |
artikel |
130 |
Phase stability and stress relaxation effects of cubic boron nitride thin films under 350 keV ion irradiation
|
Widmayer, P. |
|
1997 |
|
5-7 |
p. 621-625 5 p. |
artikel |
131 |
Photoluminescence in hydrogenated amorphous carbon
|
Rusli, |
|
1997 |
|
5-7 |
p. 700-703 4 p. |
artikel |
132 |
Photoluminescence investigation of a-C: H thin films
|
Glesener, J.W. |
|
1993 |
|
5-7 |
p. 670-672 3 p. |
artikel |
133 |
Piezoresistive effect of boron-doped diamond thin films
|
Dorsch, O. |
|
1993 |
|
5-7 |
p. 1096-1099 4 p. |
artikel |
134 |
Possible technique for the characterization of diamond films using an ultrasonic resonance technique
|
Chandra, L. |
|
1993 |
|
5-7 |
p. 977-983 7 p. |
artikel |
135 |
Post-depositional diamond etching
|
Bachmann, P.K. |
|
1993 |
|
5-7 |
p. 683-693 11 p. |
artikel |
136 |
Preparation of CN x films by ion beam assisted filtered cathodic arc deposition
|
Spaeth, C. |
|
1997 |
|
5-7 |
p. 626-630 5 p. |
artikel |
137 |
Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition
|
Woo, H.K. |
|
1997 |
|
5-7 |
p. 635-639 5 p. |
artikel |
138 |
Production and characterisation of amorphic diamond films produced by pulsed laser ablation of graphite
|
Johnson, S.E. |
|
1997 |
|
5-7 |
p. 569-573 5 p. |
artikel |
139 |
Properties and stability of diamond-like carbon films related to bonded and unbonded hydrogen
|
Martinu, L. |
|
1993 |
|
5-7 |
p. 673-677 5 p. |
artikel |
140 |
Properties and texture of B-doped diamond films as thermal sensor
|
Ran, J.G. |
|
1993 |
|
5-7 |
p. 793-796 4 p. |
artikel |
141 |
Quantitative study of Raman scattering and defect optical absorption in CVD diamond films
|
Vorlíček, V. |
|
1997 |
|
5-7 |
p. 704-707 4 p. |
artikel |
142 |
Radiation damage and electrical properties of ion-implanted chemically vapour deposited diamond
|
Mori, Yusuke |
|
1993 |
|
5-7 |
p. 634-639 6 p. |
artikel |
143 |
Raman diagnostics of amorphous diamond-like carbon films produced with a mass-separated ion beam
|
Khriachtchev, L.Yu. |
|
1997 |
|
5-7 |
p. 694-699 6 p. |
artikel |
144 |
Raman signal vs. preparation conditions of C-implanted-and-excimer-laser-annealed Cu thin films
|
Fontaine, F. |
|
1993 |
|
5-7 |
p. 746-752 7 p. |
artikel |
145 |
Raman spectroscopy investigation of cubic boron nitride single crystals and layers on Si(100)
|
Werninghaus, T. |
|
1997 |
|
5-7 |
p. 612-616 5 p. |
artikel |
146 |
Recovery process of photochromism of H2 and H3 centres in diamond
|
Mita, Y. |
|
1993 |
|
5-7 |
p. 768-772 5 p. |
artikel |
147 |
Rectifying diodes with a metal/intrinsic semiconductor/semiconductor structure using polycrystalline diamond films
|
Miyata, K. |
|
1993 |
|
5-7 |
p. 1107-1111 5 p. |
artikel |
148 |
Residual stress in polycrystalline diamond/Ti6Al4V systems
|
Scardi, Paolo |
|
1997 |
|
5-7 |
p. 807-811 5 p. |
artikel |
149 |
Shock-wave-induced phase transition in C:N films
|
Guseva, M.B. |
|
1997 |
|
5-7 |
p. 640-644 5 p. |
artikel |
150 |
Single source deposition of Me-C:H films using metal-organic precursors
|
Luithardt, W. |
|
1997 |
|
5-7 |
p. 533-536 4 p. |
artikel |
151 |
Space-charge-limited current flow and trap density in undoped diamond films
|
Werner, M. |
|
1993 |
|
5-7 |
p. 825-828 4 p. |
artikel |
152 |
Spectroscopic ellipsometry measurements of the diamond-crystalline Si interface in chemically vapour-deposited polycrystalline diamond films
|
Cifre, J. |
|
1993 |
|
5-7 |
p. 728-731 4 p. |
artikel |
153 |
Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys
|
De Cesare, G. |
|
1993 |
|
5-7 |
p. 773-777 5 p. |
artikel |
154 |
Structure and properties of a-C:H films deposited onto polymeric substrates
|
Vasquez, S. |
|
1997 |
|
5-7 |
p. 551-554 4 p. |
artikel |
155 |
Studies of nanoscale structure and its transformation in pulsed-laser deposited dense diamond-like carbon films
|
Apakina, V.N. |
|
1997 |
|
5-7 |
p. 564-568 5 p. |
artikel |
156 |
Subject index
|
|
|
1993 |
|
5-7 |
p. 1117-1124 8 p. |
artikel |
157 |
Subject index
|
|
|
1997 |
|
5-7 |
p. 919-925 7 p. |
artikel |
158 |
Superpolishing of diamond
|
Gaissmaier, K. |
|
1993 |
|
5-7 |
p. 943-948 6 p. |
artikel |
159 |
Synthesis of diamond using iron catalyst by r.f. plasma chemical vapor deposition
|
Shimada, Yoshihito |
|
1993 |
|
5-7 |
p. 656-660 5 p. |
artikel |
160 |
TEM investigations on the heteroepitaxial nucleation of CVD diamond on (001) silicon substrates
|
Wurzinger, P. |
|
1997 |
|
5-7 |
p. 752-757 6 p. |
artikel |
161 |
Temporally resolved response of a natural type IIA diamond detector to single-particle excitation
|
Han, S. |
|
1993 |
|
5-7 |
p. 835-840 6 p. |
artikel |
162 |
The effective free path length of phonons in diamond
|
Nepsha, V.I. |
|
1993 |
|
5-7 |
p. 862-865 4 p. |
artikel |
163 |
The effect of deposition parameters on the compressive stress in a-C: H thin films
|
Crouse, P.L. |
|
1993 |
|
5-7 |
p. 885-889 5 p. |
artikel |
164 |
The effect of varying deposition conditions on the Young's modulus of diamond coated wires
|
Nicholson, E.D. |
|
1997 |
|
5-7 |
p. 817-821 5 p. |
artikel |
165 |
The influence of oxygen, in gas mixtures and various substrate positions, on the broad cathodoluminescence bands of MPCVD diamond films
|
Deneuville, A. |
|
1993 |
|
5-7 |
p. 737-741 5 p. |
artikel |
166 |
Thermal conductivity and the microstructure of state-of-the-art chemical-vapor-deposited (CVD) diamond
|
Graebner, J.E. |
|
1993 |
|
5-7 |
p. 1059-1063 5 p. |
artikel |
167 |
Thermal diffusivity of diamond films synthesized from methane by arc discharge plasma jet CVD
|
Boudina, A. |
|
1993 |
|
5-7 |
p. 852-858 7 p. |
artikel |
168 |
Thermal expansion of synthetic diamond single crystals at low temperatures
|
Haruna, K. |
|
1993 |
|
5-7 |
p. 859-861 3 p. |
artikel |
169 |
Thermal-programmed desorption (TPD) of deuterium from Di(111) surface: presence of two adsorption states
|
Bobrov, K. |
|
1997 |
|
5-7 |
p. 736-742 7 p. |
artikel |
170 |
Thinning and patterning of CVD diamond films by diffusional reaction
|
Jin, S. |
|
1993 |
|
5-7 |
p. 1038-1042 5 p. |
artikel |
171 |
Total-dose hardness integrated circuit fabricated with silicon-on-diamond structured wafer
|
Gu, Changzhi |
|
1997 |
|
5-7 |
p. 673-675 3 p. |
artikel |
172 |
Transition from polymer-like to diamond-like a-C:H films structure and mechanical properties
|
Novikov, N.V. |
|
1997 |
|
5-7 |
p. 574-578 5 p. |
artikel |
173 |
Trap states elucidated by a.c. conductance measurement in polycrystalline chemically vapour-deposited diamond films
|
Sugino, Takashi |
|
1993 |
|
5-7 |
p. 803-807 5 p. |
artikel |
174 |
Tribological behaviour of diamond-like carbon coatings at high rates of sliding
|
Aksenov, I.I. |
|
1993 |
|
5-7 |
p. 866-868 3 p. |
artikel |
175 |
Tribological properties of diamond-like carbon and related materials
|
Grill, A. |
|
1993 |
|
5-7 |
p. 597-605 9 p. |
artikel |
176 |
Tuning the electron affinity of CVD diamond with adsorbed caesium and oxygen layers
|
Loh, K.P. |
|
1997 |
|
5-7 |
p. 874-878 5 p. |
artikel |
177 |
Use of diamond-like carbon films in X-ray optics
|
Kondrashov, P.E. |
|
1997 |
|
5-7 |
p. 902-905 4 p. |
artikel |
178 |
Variation of the raman diamond line shape with crystallographic orientation of isolated chemical-vapour-deposited diamond crystals
|
Stuart, S.-A. |
|
1993 |
|
5-7 |
p. 753-757 5 p. |
artikel |
179 |
Wear behaviour of various diamond-coated cutting tools under different deposition conditions
|
Huang, T.H. |
|
1993 |
|
5-7 |
p. 928-932 5 p. |
artikel |
180 |
Wide frequency dielectric properties of CVD diamond
|
Ibarra, A. |
|
1997 |
|
5-7 |
p. 856-859 4 p. |
artikel |
181 |
Young's modulus and Poisson's ratio of CVD diamond
|
Klein, Claude A. |
|
1993 |
|
5-7 |
p. 918-923 6 p. |
artikel |