nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comparative study of crystal growth and laser properties of Nd:YVO4, Nd:GdVO4 and Nd:Gd x La1−x VO4 (x=0.80, 0.60, 0.45) crystals
|
Zhang, Huaijin |
|
2003 |
23 |
1-2 |
p. 449-454 6 p. |
artikel |
2 |
A mixed rare-earth iron garnet single crystal of ReYbBiIG for high-performance magneto-optical devices
|
Zhang, Xi-wen |
|
2003 |
23 |
1-2 |
p. 421-424 4 p. |
artikel |
3 |
Amorphization and chemical modification of β-BaB2O4 surface by polishing
|
Atuchin, V.V. |
|
2003 |
23 |
1-2 |
p. 385-392 8 p. |
artikel |
4 |
An increase of photorefractive sensitivity in In:LiNbO3 crystal
|
Qiao, Haijun |
|
2003 |
23 |
1-2 |
p. 269-272 4 p. |
artikel |
5 |
Applications of photorefractive materials in information storage, processing and communication
|
Gu, Claire |
|
2003 |
23 |
1-2 |
p. 219-227 9 p. |
artikel |
6 |
A study of luminescence properties of (Gd3+, Dy3+, Nb5+)-doped lead tungstate single crystals
|
Huang, Yanlin |
|
2003 |
23 |
1-2 |
p. 443-447 5 p. |
artikel |
7 |
A systematic spectroscopic study of four bimetallic thiocyanates of chemical formula AB(SCN)4: ZnCd(SCN)4 and AHg(SCN)4 (A=Zn, Cd, Mn) as UV nonlinear optical crystal materials
|
Wang, X.Q. |
|
2003 |
23 |
1-2 |
p. 335-341 7 p. |
artikel |
8 |
Atomic packing and octahedral linking model of lithium niobate single crystals
|
Xue, Dongfeng |
|
2003 |
23 |
1-2 |
p. 399-402 4 p. |
artikel |
9 |
Author index
|
|
|
2003 |
23 |
1-2 |
p. 489-500 12 p. |
artikel |
10 |
Ba0.77Ca0.23TiO3 (BCT): a new photorefractive material to replace BaTiO3 in applications
|
Roosen, Gérald |
|
2003 |
23 |
1-2 |
p. 243-251 9 p. |
artikel |
11 |
Cesium accumulation at CsB3O5 optical surface
|
Atuchin, V.V. |
|
2003 |
23 |
1-2 |
p. 377-383 7 p. |
artikel |
12 |
Characterization and properties of a nonlinear optical crystal in IR region: RbCdI3 ·H2O
|
Ren, Peng |
|
2003 |
23 |
1-2 |
p. 331-334 4 p. |
artikel |
13 |
Characterization of GaN1−x P x alloys grown by metal-organic chemical vapor deposition
|
Chen, D.J. |
|
2003 |
23 |
1-2 |
p. 127-132 6 p. |
artikel |
14 |
Charge states and distribution of iron ions in polycrystalline cubic boron nitride
|
Fedotova, J.A. |
|
2003 |
23 |
1-2 |
p. 71-77 7 p. |
artikel |
15 |
Comparative Study of KTiOPO4 crystals
|
Hu, X.B. |
|
2003 |
23 |
1-2 |
p. 369-372 4 p. |
artikel |
16 |
Contents
|
|
|
2003 |
23 |
1-2 |
p. xvii-xviii nvt p. |
artikel |
17 |
Contents
|
|
|
2003 |
23 |
1-2 |
p. xxiii-xxiv nvt p. |
artikel |
18 |
Contents
|
|
|
2003 |
23 |
1-2 |
p. xxix-xxx nvt p. |
artikel |
19 |
Contents list
|
|
|
2003 |
23 |
1-2 |
p. vii-xi nvt p. |
artikel |
20 |
Crystal growth and characterization of La3Ga5SiO14 single crystals
|
Wang, Zengmei |
|
2003 |
23 |
1-2 |
p. 471-474 4 p. |
artikel |
21 |
Crystal orientation dependence of piezoelectric properties in LiNbO3 and LiTaO3
|
Yue, Wang |
|
2003 |
23 |
1-2 |
p. 403-408 6 p. |
artikel |
22 |
Czochralski growth of (La,Sr)(Al,Ta)O3 single crystal
|
Tao, D.J. |
|
2003 |
23 |
1-2 |
p. 425-428 4 p. |
artikel |
23 |
Deep levels in 4H-SiC layers grown by sublimation epitaxy
|
Syväjärvi, M. |
|
2003 |
23 |
1-2 |
p. 61-64 4 p. |
artikel |
24 |
Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
|
Chu, R.M. |
|
2003 |
23 |
1-2 |
p. 207-210 4 p. |
artikel |
25 |
Design of beam scanners based on Talbot-encoded phase plates
|
Zhao, Xin |
|
2003 |
23 |
1-2 |
p. 313-318 6 p. |
artikel |
26 |
Determination of the Li/Nb ratio in LiNbO3 crystals prepared by vapor transport equilibration method
|
Chen, Yunlin |
|
2003 |
23 |
1-2 |
p. 295-298 4 p. |
artikel |
27 |
Development of bulk SiC single crystal grown by physical vapor transport method
|
Han, Rongjiang |
|
2003 |
23 |
1-2 |
p. 415-420 6 p. |
artikel |
28 |
Dielectric properties and phase transition of PMN0.32PT single crystal under dc electric field
|
Li, Zhenrong |
|
2003 |
23 |
1-2 |
p. 429-432 4 p. |
artikel |
29 |
Dynamic study on nonlinear transformation of excited states in cluster materials
|
Jiao, Weiyan |
|
2003 |
23 |
1-2 |
p. 309-312 4 p. |
artikel |
30 |
Editorial board
|
|
|
2003 |
23 |
1-2 |
p. IFC- 1 p. |
artikel |
31 |
Editorial board
|
|
|
2003 |
23 |
1-2 |
p. ii- 1 p. |
artikel |
32 |
Effect of Li/Nb ratio on growth and photorefractive properties of Ce:Fe:LiNbO3 crystals
|
Xu, Yuheng |
|
2003 |
23 |
1-2 |
p. 305-308 4 p. |
artikel |
33 |
Effect of surface treatments on Schottky contact on n-Al x Ga1−x N/GaN heterostructures
|
Liu, J. |
|
2003 |
23 |
1-2 |
p. 133-137 5 p. |
artikel |
34 |
Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition
|
Keller, S. |
|
2003 |
23 |
1-2 |
p. 187-195 9 p. |
artikel |
35 |
Electronic defect states of amorphous silicon nitride
|
Lin, Shu-Ya |
|
2003 |
23 |
1-2 |
p. 93-98 6 p. |
artikel |
36 |
Electronic structures of substitutional C and O impurities in wurtzite GaN
|
Liu, Chang |
|
2003 |
23 |
1-2 |
p. 169-174 6 p. |
artikel |
37 |
Energy evolution of bipolaron in phenylene ring polymer under high electric field
|
Wang, Lu-xia |
|
2003 |
23 |
1-2 |
p. 485-488 4 p. |
artikel |
38 |
Energy transfer from the host to Eu3+ in ZnO
|
Jia, Weiyi |
|
2003 |
23 |
1-2 |
p. 27-32 6 p. |
artikel |
39 |
Epitaxial growth and microstructure of cubic SiC films on Si substrates
|
Jia, Hujun |
|
2003 |
23 |
1-2 |
p. 49-54 6 p. |
artikel |
40 |
Epitaxial growth of cubic silicon carbide on silicon by sublimation method
|
Feng, Xianfeng |
|
2003 |
23 |
1-2 |
p. 39-42 4 p. |
artikel |
41 |
Epitaxial growth of β-SiC by rf sputtering on silicon substrates and its porosity by electrochemical anodization
|
Xie, Erqing |
|
2003 |
23 |
1-2 |
p. 157-161 5 p. |
artikel |
42 |
Experimental and theoretical study of non-volatile photorefractive holograms in doubly doped LiNbO3:Fe:Cu
|
Ren, Liyong |
|
2003 |
23 |
1-2 |
p. 261-267 7 p. |
artikel |
43 |
Fabrication of GaN wafers for electronic and optoelectronic devices
|
Xu, Xueping |
|
2003 |
23 |
1-2 |
p. 1-5 5 p. |
artikel |
44 |
Fanning scattering in LiNbO3 at 750–850 nm induced by femtosecond laser pulses
|
Wu, Qiang |
|
2003 |
23 |
1-2 |
p. 277-280 4 p. |
artikel |
45 |
Formation and decay of high temperature phase in H x Li1−x NbO3 layers
|
Kalabin, I.E. |
|
2003 |
23 |
1-2 |
p. 281-284 4 p. |
artikel |
46 |
Growth and photocurrent property of GaN/anodic alumina/Si
|
Jiang, R.L. |
|
2003 |
23 |
1-2 |
p. 147-150 4 p. |
artikel |
47 |
Growth and properties of K2Al2B2O7 crystal
|
Zhang, Chengqian |
|
2003 |
23 |
1-2 |
p. 357-362 6 p. |
artikel |
48 |
Growth and properties of Nd:GdVO4 crystal
|
Qin, Lianjie |
|
2003 |
23 |
1-2 |
p. 455-459 5 p. |
artikel |
49 |
Growth and thermal properties of LaCa4O(BO3)3 crystals
|
Jiang, Huaidong |
|
2003 |
23 |
1-2 |
p. 461-464 4 p. |
artikel |
50 |
Growth mechanism of α-SiC hetero-epitaxial films by PLD as studied on the laser photon, pulse-width and substrates dependence
|
Muto, Hachizo |
|
2003 |
23 |
1-2 |
p. 43-47 5 p. |
artikel |
51 |
Growth of a nonlinear optical crystal La2CaB10O19 (LCB)
|
Wu, Yicheng |
|
2003 |
23 |
1-2 |
p. 373-375 3 p. |
artikel |
52 |
Growth of c-axis oriented GaN films on quartz by pulsed laser deposition
|
Wang, Rong-Ping |
|
2003 |
23 |
1-2 |
p. 15-20 6 p. |
artikel |
53 |
Growth of K2Al2B2O7 crystal for UV light generation
|
Hu, Z.-G. |
|
2003 |
23 |
1-2 |
p. 353-356 4 p. |
artikel |
54 |
Growth, properties and electrooptical applications of single crystal La3Ga5SiO14
|
Wang, Jiyang |
|
2003 |
23 |
1-2 |
p. 393-397 5 p. |
artikel |
55 |
High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition
|
Sun, L. |
|
2003 |
23 |
1-2 |
p. 109-112 4 p. |
artikel |
56 |
Hydrothermal synthesis of metastable γ-manganese sulfide crystallites
|
Zhang, YongCai |
|
2003 |
23 |
1-2 |
p. 433-437 5 p. |
artikel |
57 |
Influence of argon gas pressure on the crystallinity of α-SiC epitaxial films fabricated by Nd:YAG pulsed-laser deposition
|
Kusumori, Takeshi |
|
2003 |
23 |
1-2 |
p. 55-60 6 p. |
artikel |
58 |
InGaN/GaN MQW high brightness LED grown by MOCVD
|
Zhang, G.Y. |
|
2003 |
23 |
1-2 |
p. 183-186 4 p. |
artikel |
59 |
In situ investigation for polarity-controlled epitaxy processes of GaN and AlN in MBE and MOVPE growth
|
Yoshikawa, Akihiko |
|
2003 |
23 |
1-2 |
p. 7-14 8 p. |
artikel |
60 |
Investigation of the crystal tilts in laterally epitaxial overgrowth GaN films formed by hydride vapor phase epitaxy
|
Wang, F. |
|
2003 |
23 |
1-2 |
p. 123-126 4 p. |
artikel |
61 |
Investigation on photorefractive properties of In:Mn:Fe:LiNbO3
|
Wang, Biao |
|
2003 |
23 |
1-2 |
p. 273-276 4 p. |
artikel |
62 |
Morphology and electrochemical performance of nano-scale nickel hydroxide prepared by supersonic coordination–precipitation method
|
Han, Xijiang |
|
2003 |
23 |
1-2 |
p. 465-470 6 p. |
artikel |
63 |
Nano-dendrites in NaFe4P12 nano-wires synthesized by hydrothermal method
|
Liu, Hong |
|
2003 |
23 |
1-2 |
p. 475-478 4 p. |
artikel |
64 |
Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-Al x Ga1−x N/GaN heterostructures
|
Shen, B. |
|
2003 |
23 |
1-2 |
p. 197-201 5 p. |
artikel |
65 |
Ohmic contacts to boron-doped diamond
|
Zhen, Congmian |
|
2003 |
23 |
1-2 |
p. 117-121 5 p. |
artikel |
66 |
Optical absorption of Co2+-doped silica gel-derived glasses
|
Duan, X.L. |
|
2003 |
23 |
1-2 |
p. 327-330 4 p. |
artikel |
67 |
Optical Boolean logic based on degenerate multi-wave mixing in bR film
|
Li, Yudong |
|
2003 |
23 |
1-2 |
p. 285-288 4 p. |
artikel |
68 |
Optical investigations on excitons bound to impurities and dislocations in ZnO
|
Alves, H. |
|
2003 |
23 |
1-2 |
p. 33-37 5 p. |
artikel |
69 |
Optically induced photorefractive waveguides in KNSBN:Ce crystal
|
Zhang, Peng |
|
2003 |
23 |
1-2 |
p. 299-303 5 p. |
artikel |
70 |
Optical properties of Yb ions in GaN epilayer
|
Jadwisienczak, W.M. |
|
2003 |
23 |
1-2 |
p. 175-181 7 p. |
artikel |
71 |
Photoluminescence from β-SiC nanocrystals embedded in SiO2 films prepared by ion implantation
|
Chen, Dihu |
|
2003 |
23 |
1-2 |
p. 65-69 5 p. |
artikel |
72 |
Polaron tunneling in copolymers under external electric fields
|
Liu, De-sheng |
|
2003 |
23 |
1-2 |
p. 479-483 5 p. |
artikel |
73 |
Preface
|
Xu, Jingjun |
|
2003 |
23 |
1-2 |
p. xxi- 1 p. |
artikel |
74 |
Preface
|
Zhang, R. |
|
2003 |
23 |
1-2 |
p. xv- 1 p. |
artikel |
75 |
Preface
|
Wang, Jiyang |
|
2003 |
23 |
1-2 |
p. xxvii-xxviii nvt p. |
artikel |
76 |
Preparation and characterization of SiCN films
|
Xie, Erqing |
|
2003 |
23 |
1-2 |
p. 151-156 6 p. |
artikel |
77 |
Preparation and properties of BaTiSi2O7 glass-ceramics
|
Zhu, Mankang |
|
2003 |
23 |
1-2 |
p. 323-326 4 p. |
artikel |
78 |
Progress in the growth of a CsLiB6O10 crystal and its application to ultraviolet light generation
|
Sasaki, Takatomo |
|
2003 |
23 |
1-2 |
p. 343-351 9 p. |
artikel |
79 |
Relation of the photorefraction and optical-damage resistance to the intrinsic defect structure in LiNbO3 crystals
|
Volk, T. |
|
2003 |
23 |
1-2 |
p. 229-233 5 p. |
artikel |
80 |
Research on the Mn-implanted GaN with ferromagnetism at room temperature
|
Xu, J. |
|
2003 |
23 |
1-2 |
p. 163-167 5 p. |
artikel |
81 |
Restoration of KTiOPO4 surface by annealing
|
Atuchin, V.V. |
|
2003 |
23 |
1-2 |
p. 363-367 5 p. |
artikel |
82 |
Self-organization of laser cavities using dynamic holograms
|
Roosen, Gérald |
|
2003 |
23 |
1-2 |
p. 289-293 5 p. |
artikel |
83 |
SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates
|
Yan, F. |
|
2003 |
23 |
1-2 |
p. 113-116 4 p. |
artikel |
84 |
Spin-selective positioning of wave functions in magnetically tunable symmetric triple quantum wells
|
Lee, S. |
|
2003 |
23 |
1-2 |
p. 79-82 4 p. |
artikel |
85 |
SrWO4:Nd3+ – new material for multifunctional lasers
|
Ivleva, L.I. |
|
2003 |
23 |
1-2 |
p. 439-442 4 p. |
artikel |
86 |
Structure and optical properties of Ge/C multilayers deposited on Si and Sapphire substrates by RF magnetron sputtering
|
Wei, P. |
|
2003 |
23 |
1-2 |
p. 83-87 5 p. |
artikel |
87 |
Structure-nonlinearity relationship of urea crystal: an ab initio study
|
Xue, D. |
|
2003 |
23 |
1-2 |
p. 319-322 4 p. |
artikel |
88 |
Study of low-frequency excess noise in GaN materials
|
Leung, B.H. |
|
2003 |
23 |
1-2 |
p. 203-206 4 p. |
artikel |
89 |
Study of plasma etching of β-SiC thin films grown on Si-substrate
|
Chai, Changchun |
|
2003 |
23 |
1-2 |
p. 103-107 5 p. |
artikel |
90 |
Study on the AlN/Si(111) interface properties
|
Xi, D.J. |
|
2003 |
23 |
1-2 |
p. 143-146 4 p. |
artikel |
91 |
Subbands transport of the two-dimensional electron gas in Al x Ga1−x N/GaN heterostructures
|
Zheng, Z.W. |
|
2003 |
23 |
1-2 |
p. 139-141 3 p. |
artikel |
92 |
Supernormal optical characteristics in doped quaternary ammonium salt KDP crystals
|
Xu, Xin-guang |
|
2003 |
23 |
1-2 |
p. 409-414 6 p. |
artikel |
93 |
The design, fabrication and property study for photorefractive applications of novel organic materials
|
Chen, Zhijian |
|
2003 |
23 |
1-2 |
p. 253-259 7 p. |
artikel |
94 |
The investigation for various treatments of InAlGaP Schottky diodes
|
Lee, Hsin-Ying |
|
2003 |
23 |
1-2 |
p. 99-102 4 p. |
artikel |
95 |
The microstructure studies of bismuth sulfide nanorods prepared by sonochemical method
|
Zhu, J.M. |
|
2003 |
23 |
1-2 |
p. 89-92 4 p. |
artikel |
96 |
Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors designed for high-power applications
|
Maeda, Narihiko |
|
2003 |
23 |
1-2 |
p. 211-217 7 p. |
artikel |
97 |
Waveguides and waveguide arrays formed by incoherent light in photorefractive materials
|
Chen, Zhigang |
|
2003 |
23 |
1-2 |
p. 235-241 7 p. |
artikel |
98 |
ZnSSe-based ultra-violet photodiodes with extremely high detectivity
|
Lai, L.S. |
|
2003 |
23 |
1-2 |
p. 21-26 6 p. |
artikel |