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                             82 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Aluminium oxide film for 2D photonic structure: room temperature formation Mikulskas, I.
 2001
 17 1-2 p. 343-346
4 p.
 artikel
2 A novel selectively δ-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructure Bouzaı̈ene, L.
 2001
 17 1-2 p. 299-303
5 p.
 artikel
3 A porous silicon LED based on a standard BCD technology Barillaro, G.
 2001
 17 1-2 p. 91-94
4 p.
 artikel
4 Appearance of direct gap in silicon and germanium nanosize slabs Kholod, A.N.
 2001
 17 1-2 p. 61-63
3 p.
 artikel
5 Author index to volume 2001
 17 1-2 p. 359-369
11 p.
 artikel
6 Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers Son, J.H.
 2001
 17 1-2 p. 125-129
5 p.
 artikel
7 Carrier dynamics in GaAs–Al0.46Ga0.54As superlattice structure grown by molecular beam epitaxy Kraı̈em, S.
 2001
 17 1-2 p. 305-309
5 p.
 artikel
8 Channel waveguides grown by selective area chemical beam epitaxy Pernas, P.L.
 2001
 17 1-2 p. 259-262
4 p.
 artikel
9 Contents 2001
 17 1-2 p. ix-xii
nvt p.
 artikel
10 Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE Napierala, J.
 2001
 17 1-2 p. 315-318
4 p.
 artikel
11 2D inter-chip optical interconnect Baets, R.
 2001
 17 1-2 p. 227-233
7 p.
 artikel
12 DLTS study of deep levels in GRIN–SCH–SQW GaAs/AlGaAs laser diode structures grown by MBE Kaniewska, M.
 2001
 17 1-2 p. 283-286
4 p.
 artikel
13 Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si Bae, Sang Hyuck
 2001
 17 1-2 p. 327-330
4 p.
 artikel
14 Electroluminescence microscopy and spectroscopy of silicon nanocrystals in thin SiO2 layers Valenta, J.
 2001
 17 1-2 p. 45-50
6 p.
 artikel
15 Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiO x N y films caused by hydrostatic pressure during annealing Tyschenko, I.E.
 2001
 17 1-2 p. 99-102
4 p.
 artikel
16 Erbium-doped crystalline YAG planar and ridge waveguides on quartz and sapphire substrates: deposition and material characterisation Facchini, G.
 2001
 17 1-2 p. 251-254
4 p.
 artikel
17 Er/O doped Si1−x Ge x alloy layers grown by MBE Duteil, F.
 2001
 17 1-2 p. 131-134
4 p.
 artikel
18 Examination of the structure of sol–gel derived matrices for optoelectronic sensors Ulatowska, Agnieszka
 2001
 17 1-2 p. 169-173
5 p.
 artikel
19 Facet temperature mapping of GaAs/AlGaAs quantum cascade lasers by photoluminescence microprobe Spagnolo, V.
 2001
 17 1-2 p. 219-222
4 p.
 artikel
20 Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy Sánchez-Almazán, F.
 2001
 17 1-2 p. 271-274
4 p.
 artikel
21 High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates Luan, H.-C.
 2001
 17 1-2 p. 71-73
3 p.
 artikel
22 High-quality GaAs-related lateral junctions on Si by conformal growth Gil-Lafon, E.
 2001
 17 1-2 p. 267-270
4 p.
 artikel
23 Hot electron distribution in quantum cascade and single stage GaAs/AlGaAs periodic superlattice structures Troccoli, M.
 2001
 17 1-2 p. 223-225
3 p.
 artikel
24 Hybrid polymer-on-glass integrated optical diffractive structures for wavelength discrimination Shechter, R.
 2001
 17 1-2 p. 165-167
3 p.
 artikel
25 Hybrid semiconductor polymer resonant grating waveguide structures Levy-Yurista, G.
 2001
 17 1-2 p. 149-154
6 p.
 artikel
26 Influence of the initial layers on the optical and electrical properties of ITO films Amaral, A.
 2001
 17 1-2 p. 291-294
4 p.
 artikel
27 Influence of the spatial arrangement on the quantum confinement properties of Si nanocrystals Iacona, Fabio
 2001
 17 1-2 p. 51-55
5 p.
 artikel
28 Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots Saint-Girons, G.
 2001
 17 1-2 p. 263-266
4 p.
 artikel
29 (InGa)(NAs)/GaAs structures emitting in 1–1.6 μm wavelength range Mereuta, A.
 2001
 17 1-2 p. 185-188
4 p.
 artikel
30 Investigation of the optical and electro-optical properties of hexagonal boron nitride thin films deposited by PECVD technique El-Yadouni, A
 2001
 17 1-2 p. 319-322
4 p.
 artikel
31 Investigation on optical and microstructural properties of photoluminescent LPCVD SiO x N y thin films Modreanu, M
 2001
 17 1-2 p. 145-148
4 p.
 artikel
32 Investigations on SnS films deposited by spray pyrolysis Ramakrishna Reddy, K.T.
 2001
 17 1-2 p. 295-298
4 p.
 artikel
33 Irradiation-induced persistent photoconductivity in CdS films prepared by chemical bath deposition Narayanan, K.L.
 2001
 17 1-2 p. 355-358
4 p.
 artikel
34 ITO thin films deposited by RTE on flexible transparent substrates Nunes de Carvalho, C.
 2001
 17 1-2 p. 287-290
4 p.
 artikel
35 Lateral coupling – a material independent way to complex coupled DFB lasers Kamp, M.
 2001
 17 1-2 p. 19-25
7 p.
 artikel
36 Luminescence of silicon nanostructured by irradiation with heavy ions Tetelbaum, D.I.
 2001
 17 1-2 p. 57-59
3 p.
 artikel
37 Luminescence of silicon thin film and SiGe multiple quantum wells realized on SOI Calvo, V.
 2001
 17 1-2 p. 107-110
4 p.
 artikel
38 Luminescence properties of Si nanocrystals fabricated on Si substrate by pulsed laser deposition Bae, Sang Hyuck
 2001
 17 1-2 p. 87-90
4 p.
 artikel
39 Luminescence properties of two-photon excited silicon nanocrystals Diener, J.
 2001
 17 1-2 p. 117-120
4 p.
 artikel
40 1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates Curry, R.J.
 2001
 17 1-2 p. 161-163
3 p.
 artikel
41 Mid-infrared (3.5 μm) electroluminescence from heavily Fe 2+ ion-implanted semi-insulating InP Troccoli, M.
 2001
 17 1-2 p. 189-191
3 p.
 artikel
42 1.54 μm Light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy Ni, W.-X.
 2001
 17 1-2 p. 65-69
5 p.
 artikel
43 Morphological, optical and electrical characterization of antireflective porous silicon coatings for solar cells Martı́n-Palma, R.J.
 2001
 17 1-2 p. 75-78
4 p.
 artikel
44 Near-infrared waveguide photodetectors based on polycrystalline Ge on silicon-on-insulator substrates Masini, G.
 2001
 17 1-2 p. 243-246
4 p.
 artikel
45 Novel quantum cascade devices for long wavelength IR emission Tredicucci, Alessandro
 2001
 17 1-2 p. 211-217
7 p.
 artikel
46 Optical and structural investigation of InAs/AlSb/GaSb heterostructures Prevot, I.
 2001
 17 1-2 p. 193-195
3 p.
 artikel
47 Optical characterisation of 2D macroporous silicon photonic crystals with bandgaps around 3.5 and 1.3 μm Schilling, J.
 2001
 17 1-2 p. 7-10
4 p.
 artikel
48 Optical gain in silicon nanocrystals Dal Negro, L.
 2001
 17 1-2 p. 41-44
4 p.
 artikel
49 Optically written polymers used as optical interconnects and for hybridisation Tooley, F.
 2001
 17 1-2 p. 235-241
7 p.
 artikel
50 Optical properties of β-FeSi2 precipitate layers in silicon Schuller, B.
 2001
 17 1-2 p. 121-124
4 p.
 artikel
51 Optical properties of isostructural β-FeSi2,OsSi2,Fe0.5Os0.5Si2 and Os0.5Fe0.5Si2 Migas, D.B.
 2001
 17 1-2 p. 335-338
4 p.
 artikel
52 Optical properties of semiconducting Ru2Si3 Shaposhnikov, V.L.
 2001
 17 1-2 p. 339-341
3 p.
 artikel
53 Optical properties of silicon nanocrystals Kovalev, D.
 2001
 17 1-2 p. 35-40
6 p.
 artikel
54 Optical study of intersubband transitions in GaSb/AlGaSb systems for QWIPs Ferrini, R.
 2001
 17 1-2 p. 351-354
4 p.
 artikel
55 Optimization of second-order nonlinearity in UV-poled silica glass Khaled, J.
 2001
 17 1-2 p. 275-278
4 p.
 artikel
56 Optimum oxygen concentration for the optoelectronic properties of IR sensitive VO x thin films Park, K.M.
 2001
 17 1-2 p. 311-314
4 p.
 artikel
57 Optoelectronic devices based on hybrid organic–inorganic structures Tessler, N.
 2001
 17 1-2 p. 155-160
6 p.
 artikel
58 Organizers Sirtori, C.
 2001
 17 1-2 p. viii-
1 p.
 artikel
59 Photo and electroluminescence from PECVD grown a-Si:H/SiO2 multilayers Ovchinnikov, V
 2001
 17 1-2 p. 103-106
4 p.
 artikel
60 Photonic circuits integrated with CMOS compatible photodetectors Cristea, Dana
 2001
 17 1-2 p. 201-205
5 p.
 artikel
61 Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures Kim, H.Y.
 2001
 17 1-2 p. 141-144
4 p.
 artikel
62 Photoresponse spectral investigations for anisotropic semiconductor InSe Kovalyuk, Z.D.
 2001
 17 1-2 p. 279-281
3 p.
 artikel
63 Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices Ünal, B.
 2001
 17 1-2 p. 79-82
4 p.
 artikel
64 Poly(p-phenylene vinylene)/porous GaP composite materials Le Rendu, P.
 2001
 17 1-2 p. 175-178
4 p.
 artikel
65 Porous silicon light-emitting diodes – mechanisms in the operation Molnár, K.
 2001
 17 1-2 p. 111-116
6 p.
 artikel
66 Preface WeissPavesiSirtori, VictorLorenzoCarlo
 2001
 17 1-2 p. vii-
1 p.
 artikel
67 Raman study of Zn x Be1−x Se solid solutions Pagès, O.
 2001
 17 1-2 p. 323-326
4 p.
 artikel
68 Refractive index modification from colour centres in dielectric confining structures Montecchi, M.
 2001
 17 1-2 p. 347-350
4 p.
 artikel
69 Replication technology for photonic band gap applications Grigaliunas, V.
 2001
 17 1-2 p. 15-18
4 p.
 artikel
70 Role of defects in Si/SiO2 quantum wells Degoli, Elena
 2001
 17 1-2 p. 95-98
4 p.
 artikel
71 Self-assembled heterostructures based on magnetic particles for photonic bandgap applications Saado, Y.
 2001
 17 1-2 p. 1-6
6 p.
 artikel
72 Silicon-compatible waveguides used for an integrated opto-mechanical pressure sensor Muller, Raluca
 2001
 17 1-2 p. 255-258
4 p.
 artikel
73 Silicon microcavity light emitting devices Chan, Selena
 2001
 17 1-2 p. 31-34
4 p.
 artikel
74 (Si/SiO2) n multilayers and microcavities for LED applications Pucker, G.
 2001
 17 1-2 p. 27-30
4 p.
 artikel
75 Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals Diener, J.
 2001
 17 1-2 p. 135-139
5 p.
 artikel
76 Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100) GaAs Prete, P.
 2001
 17 1-2 p. 207-210
4 p.
 artikel
77 Study of parameters important for the growth of single wall carbon nanotubes Maser, W.K
 2001
 17 1-2 p. 331-334
4 p.
 artikel
78 Thermally detected optical absorption, reflectance and photo-reflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy Disseix, P.
 2001
 17 1-2 p. 197-200
4 p.
 artikel
79 Titania inverse opals for infrared optical applications Lanata, M.
 2001
 17 1-2 p. 11-14
4 p.
 artikel
80 Transmittance examination in sol–gel derived matrices for optoelectronic applications Ulatowska, Agnieszka
 2001
 17 1-2 p. 247-250
4 p.
 artikel
81 Type-II antimonide quantum wells for mid-infrared lasers Yang, M.J.
 2001
 17 1-2 p. 179-183
5 p.
 artikel
82 Visible light emission from Si nanocrystalline composites via reactive evaporation of SiO Kahler, U.
 2001
 17 1-2 p. 83-86
4 p.
 artikel
                             82 gevonden resultaten
 
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