| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of characteristics of vertical-cavity surface-emitting lasers with a modified rate equation
|
Song, Junfeng
|
|
2000
|
14 |
3 |
p. 217-221
5 p.
|
artikel
|
| 2 |
Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells
|
Li, Cheng
|
|
2000
|
14 |
3 |
p. 267-269
3 p.
|
artikel
|
| 3 |
Compact temperature-compensating package for long-period fiber gratings
|
Qin, L.
|
|
2000
|
14 |
3 |
p. 239-242
4 p.
|
artikel
|
| 4 |
Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE
|
Jin, Zhi
|
|
2000
|
14 |
3 |
p. 211-215
5 p.
|
artikel
|
| 5 |
Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy
|
Du, Chun-Xia
|
|
2000
|
14 |
3 |
p. 259-265
7 p.
|
artikel
|
| 6 |
Electron cyclotron resonance etching of GaAs vias for monolithic microwave integrated circuits
|
Chen, Y.W
|
|
2000
|
14 |
3 |
p. 223-227
5 p.
|
artikel
|
| 7 |
Experimental study on tunable external cavity photodetectors
|
Ren, Xiaomin
|
|
2000
|
14 |
3 |
p. 243-246
4 p.
|
artikel
|
| 8 |
High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers
|
Lee, Ching-Ting
|
|
2000
|
14 |
3 |
p. 251-253
3 p.
|
artikel
|
| 9 |
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers
|
Chen, Lianghui
|
|
2000
|
14 |
3 |
p. 201-204
4 p.
|
artikel
|
| 10 |
Mechanism on exciton-mediated energy transfer in erbium-doped silicon
|
Lei, Hongbing
|
|
2000
|
14 |
3 |
p. 255-258
4 p.
|
artikel
|
| 11 |
1.3 μm integrated superluminescent light source
|
Liu, Yang
|
|
2000
|
14 |
3 |
p. 235-238
4 p.
|
artikel
|
| 12 |
Monolithically integrated distributed Bragg reflector lasers for 1.5 μm operation with band gap shifted grating section
|
Ke, Maolong
|
|
2000
|
14 |
3 |
p. 193-196
4 p.
|
artikel
|
| 13 |
Optical loss mechanism in yttria thin film waveguides
|
Kim, You Song
|
|
2000
|
14 |
3 |
p. 229-234
6 p.
|
artikel
|
| 14 |
Optical properties in InGaN/GaN multiple quantum wells and blue LEDs
|
Su, Y.K
|
|
2000
|
14 |
3 |
p. 205-209
5 p.
|
artikel
|
| 15 |
Properties of excitonic photoluminescence from ZnCdSe/ZnSe quantum well structures
|
Wang, Xingjun
|
|
2000
|
14 |
3 |
p. 197-200
4 p.
|
artikel
|
| 16 |
The fabrication of thick SiO2 layer by anodization
|
Ou, Haiyan
|
|
2000
|
14 |
3 |
p. 271-275
5 p.
|
artikel
|
| 17 |
The influence of surface modification on the femtosecond optical Kerr effect of PbS nanoparticles
|
Guo, Lin
|
|
2000
|
14 |
3 |
p. 247-250
4 p.
|
artikel
|
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