| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aims and scope
|
|
|
1992
|
1 |
3 |
p. i-
1 p.
|
artikel
|
| 2 |
Bandstructure effects and near-resonant enhancement of the third-order susceptibility in GaAs-AIAs superlattices
|
Adderley, B.M.
|
|
1992
|
1 |
3 |
p. 141-150
10 p.
|
artikel
|
| 3 |
Crystal-field analyis of Mn5+ (3d2) in Sr5 (PO4)3Cl
|
Capobianco, J.A.
|
|
1992
|
1 |
3 |
p. 209-216
8 p.
|
artikel
|
| 4 |
Diffusion and recombination of bipolar plasmas in highly excited semiconductors
|
Hönerlage, Bernd
|
|
1992
|
1 |
3 |
p. 133-140
8 p.
|
artikel
|
| 5 |
Dispersion of the nonlinear refractive index of optical crystals
|
Adair, Robert
|
|
1992
|
1 |
3 |
p. 185-194
10 p.
|
artikel
|
| 6 |
Energy levels of rare-earth ions in rare-earth arsenides
|
Morrison, C.A.
|
|
1992
|
1 |
3 |
p. 195-207
13 p.
|
artikel
|
| 7 |
Light-induced absorption in BaTiO3 and KNbO3 generated with high intensity laser pulses
|
Buse, K.
|
|
1992
|
1 |
3 |
p. 165-170
6 p.
|
artikel
|
| 8 |
On the microscopic origin of the photochromic and photorefractive behavior of doped Bi4Ge3O12 single crystals
|
Zaldo, C.
|
|
1992
|
1 |
3 |
p. 171-176
6 p.
|
artikel
|
| 9 |
Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry
|
Jellison Jr., G.E.
|
|
1992
|
1 |
3 |
p. 151-160
10 p.
|
artikel
|
| 10 |
Optically written waveguides in ion implanted Bi4Ge3O12
|
Brocklesby, W.S.
|
|
1992
|
1 |
3 |
p. 177-184
8 p.
|
artikel
|
| 11 |
Optical properties and laser parameters of Nd3+-doped flouride glasses
|
Tesar, A.
|
|
1992
|
1 |
3 |
p. 217-234
18 p.
|
artikel
|
| 12 |
Refractive index measurements on bismuth tellurium oxide (Bi2TeO5) single crystal
|
Mandula, G.
|
|
1992
|
1 |
3 |
p. 161-164
4 p.
|
artikel
|
| 13 |
Third-harmonic generation measurements on thin films of novel substituted polythiophenes
|
Callender, C.L.
|
|
1992
|
1 |
3 |
p. 125-131
7 p.
|
artikel
|
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