| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation of the oxidized Ni/InAs interface
|
Venter, A.
|
|
2009
|
404 |
22 |
p. 4452-4456
5 p.
|
artikel
|
| 2 |
Characteristic properties of Y2SiO5:Ce thin films grown with PLD
|
Coetsee, E.
|
|
2009
|
404 |
22 |
p. 4431-4435
5 p.
|
artikel
|
| 3 |
Characterization and luminescent properties of SiO2:ZnS:Mn2+ and ZnS:Mn2+ nanophosphors synthesized by a sol–gel method
|
Biggs, M.M.
|
|
2009
|
404 |
22 |
p. 4470-4475
6 p.
|
artikel
|
| 4 |
Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)
|
Nyamhere, C.
|
|
2009
|
404 |
22 |
p. 4379-4381
3 p.
|
artikel
|
| 5 |
Characterization of InSb layers on GaAs substrates using infrared reflectance and a modified oscillator formula
|
Engelbrecht, J.A.A.
|
|
2009
|
404 |
22 |
p. 4397-4401
5 p.
|
artikel
|
| 6 |
Conference Organization
|
|
|
2009
|
404 |
22 |
p. v-
1 p.
|
artikel
|
| 7 |
Conference photograph
|
|
|
2009
|
404 |
22 |
p. vi-
1 p.
|
artikel
|
| 8 |
Contents
|
|
|
2009
|
404 |
22 |
p. vii-ix
nvt p.
|
artikel
|
| 9 |
Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium
|
Coelho, S.M.M.
|
|
2009
|
404 |
22 |
p. 4389-4392
4 p.
|
artikel
|
| 10 |
Damage formation in Ge during Ar+ and He+ implantation at 15K
|
Hayes, M.
|
|
2009
|
404 |
22 |
p. 4382-4385
4 p.
|
artikel
|
| 11 |
Degradation analysis of thin film photovoltaic modules
|
Radue, C.
|
|
2009
|
404 |
22 |
p. 4449-4451
3 p.
|
artikel
|
| 12 |
Device and performance parameters of Cu(In,Ga)(Se,S)2-based solar cells with varying i-ZnO layer thickness
|
Macabebe, E.Q.B.
|
|
2009
|
404 |
22 |
p. 4466-4469
4 p.
|
artikel
|
| 13 |
Editorial Board
|
|
|
2009
|
404 |
22 |
p. IFC-
1 p.
|
artikel
|
| 14 |
Effect of alpha-particle irradiation on the electrical properties of n-type Ge
|
Roro, K.T.
|
|
2009
|
404 |
22 |
p. 4496-4498
3 p.
|
artikel
|
| 15 |
Effect of high temperature treatments on defect centers and impurities in hydrothermally grown ZnO
|
Vines, L.
|
|
2009
|
404 |
22 |
p. 4386-4388
3 p.
|
artikel
|
| 16 |
Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes
|
Diale, M.
|
|
2009
|
404 |
22 |
p. 4415-4418
4 p.
|
artikel
|
| 17 |
Electrical characterization of rare-earth implanted GaN
|
Janse van Rensburg, P.J.
|
|
2009
|
404 |
22 |
p. 4411-4414
4 p.
|
artikel
|
| 18 |
Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
|
Auret, F.D.
|
|
2009
|
404 |
22 |
p. 4376-4378
3 p.
|
artikel
|
| 19 |
Experimental analysis and modeling of the IV characteristics of photovoltaic solar cells under solar spectrum spot illumination
|
Munji, M.K.
|
|
2009
|
404 |
22 |
p. 4457-4460
4 p.
|
artikel
|
| 20 |
Functionalized CdS nanospheres and nanorods
|
Lee, Hyeokjin
|
|
2009
|
404 |
22 |
p. 4364-4369
6 p.
|
artikel
|
| 21 |
Growth and electrical properties of ZnO nanorod arrays prepared by chemical spray pyrolysis
|
Krunks, M.
|
|
2009
|
404 |
22 |
p. 4422-4425
4 p.
|
artikel
|
| 22 |
Hot-electron induced impact-ionisation damage at the interface of sub-micron silicon MOS devices: Model and monitor
|
Das, A.G.M.
|
|
2009
|
404 |
22 |
p. 4393-4396
4 p.
|
artikel
|
| 23 |
Luminescent mechanism of Y2SiO5:Ce phosphor powder
|
Coetsee, E.
|
|
2009
|
404 |
22 |
p. 4426-4430
5 p.
|
artikel
|
| 24 |
Metalorganic chemical vapor deposition of ZnO:N using NO as dopant
|
Dangbégnon, J.K.
|
|
2009
|
404 |
22 |
p. 4419-4421
3 p.
|
artikel
|
| 25 |
Microstructural and surface characterization of thin gold films on n-Ge (111)
|
Nel, J.M.
|
|
2009
|
404 |
22 |
p. 4493-4495
3 p.
|
artikel
|
| 26 |
Morphological and optical properties of MnS/polyvinylcarbazole hybrid composites
|
Moloto, Nosipho
|
|
2009
|
404 |
22 |
p. 4461-4465
5 p.
|
artikel
|
| 27 |
Nanointegration of ZnO with Si and SiC
|
Khranovskyy, V.
|
|
2009
|
404 |
22 |
p. 4359-4363
5 p.
|
artikel
|
| 28 |
Non-equilibrium dynamics for impurities in semiconductors
|
Estreicher, S.K.
|
|
2009
|
404 |
22 |
p. 4337-4340
4 p.
|
artikel
|
| 29 |
Opto-electronic analysis of silicon solar cells by LBIC investigations and current–voltage characterization
|
Thantsha, N.M.
|
|
2009
|
404 |
22 |
p. 4445-4448
4 p.
|
artikel
|
| 30 |
Photoluminescence and phosphorescence properties of MAl2O4:Eu2+, Dy3+ (M=Ca, Ba, Sr) phosphors prepared at an initiating combustion temperature of 500°C
|
Mothudi, B.M.
|
|
2009
|
404 |
22 |
p. 4440-4444
5 p.
|
artikel
|
| 31 |
Photoluminescence study of hydrogen donors in ZnO
|
Herklotz, F.
|
|
2009
|
404 |
22 |
p. 4349-4353
5 p.
|
artikel
|
| 32 |
Preface
|
Auret, Danie
|
|
2009
|
404 |
22 |
p. xi-
1 p.
|
artikel
|
| 33 |
Proceedings of the Third South African Conference on Photonic Materials
|
|
|
2009
|
404 |
22 |
p. iii-
1 p.
|
artikel
|
| 34 |
Properties of laser gain of Li:CdZnO/ZnMgO quantum well
|
Jeon, H.C.
|
|
2009
|
404 |
22 |
p. 4341-4343
3 p.
|
artikel
|
| 35 |
Role of impurities and dislocations for the unintentional n-type conductivity in InN
|
Darakchieva, V.
|
|
2009
|
404 |
22 |
p. 4476-4481
6 p.
|
artikel
|
| 36 |
Sensitized luminescence through nanoscopic effects of ZnO encapsulated in SiO2:Tb3+ sol gel derived phosphor
|
Dhlamini, M.S.
|
|
2009
|
404 |
22 |
p. 4406-4410
5 p.
|
artikel
|
| 37 |
Shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopy
|
Schifano, R.
|
|
2009
|
404 |
22 |
p. 4344-4348
5 p.
|
artikel
|
| 38 |
Structural, luminescent and thermal properties of blue SrAl2O4:Eu2+, Dy3+ phosphor filled low-density polyethylene composites
|
Bem, D.B.
|
|
2009
|
404 |
22 |
p. 4504-4508
5 p.
|
artikel
|
| 39 |
Studies of defects in photonic materials
|
Amolo, G.O.
|
|
2009
|
404 |
22 |
p. 4370-4375
6 p.
|
artikel
|
| 40 |
The dependence of barrier height on temperature for Pd Schottky contacts on ZnO
|
Mtangi, W.
|
|
2009
|
404 |
22 |
p. 4402-4405
4 p.
|
artikel
|
| 41 |
The effect of Mg2+ ions on the photoluminescence of Ce3+-doped silica
|
Koao, L.F.
|
|
2009
|
404 |
22 |
p. 4499-4503
5 p.
|
artikel
|
| 42 |
The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu2+,Dy3+ thin films
|
Ntwaeaborwa, O.M.
|
|
2009
|
404 |
22 |
p. 4436-4439
4 p.
|
artikel
|
| 43 |
The influence of the number of pulses on the morphological and photoluminescence properties of SrAl2O4:Eu2+,Dy3+ thin films prepared by pulsed laser deposition
|
Nsimama, P.D.
|
|
2009
|
404 |
22 |
p. 4489-4492
4 p.
|
artikel
|
| 44 |
The manuscripts for these Proceedings were received by the Publisher: mid-August 2009
|
|
|
2009
|
404 |
22 |
p. iv-
1 p.
|
artikel
|
| 45 |
Thermally induced defects in a polycrystalline diamond layer on a tungsten carbide substrate
|
Masina, B.N.
|
|
2009
|
404 |
22 |
p. 4485-4488
4 p.
|
artikel
|
| 46 |
Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process
|
Chawanda, A.
|
|
2009
|
404 |
22 |
p. 4482-4484
3 p.
|
artikel
|
| 47 |
The silicon vacancy in SiC
|
Janzén, Erik
|
|
2009
|
404 |
22 |
p. 4354-4358
5 p.
|
artikel
|
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