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                             100 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A model for the buffer layer formed on silicon during HFCVD diamond growth Wang, En Ge
 1993
 185 1-4 p. 85-89
5 p.
 artikel
2 An ensemble Monte Carlo study of high-field transport in β-SiC Tsukioka, K.
 1993
 185 1-4 p. 466-470
5 p.
 artikel
3 A new approach to wide band gap visible-light emitters Phillips, M.C.
 1993
 185 1-4 p. 485-489
5 p.
 artikel
4 Annealing behaviour of In impurities in SiC after ion implantation Meier, J.
 1993
 185 1-4 p. 207-210
4 p.
 artikel
5 Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSe Yoshikawa, Akihiko
 1993
 185 1-4 p. 50-64
15 p.
 artikel
6 Band structure and high-pressure phase transition in GaN, AlN, InN and BN Gorczyca, I.
 1993
 185 1-4 p. 410-414
5 p.
 artikel
7 Blue-green II–VI laser diodes Walker, C.T.
 1993
 185 1-4 p. 27-35
9 p.
 artikel
8 Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC Edmond, John A.
 1993
 185 1-4 p. 453-460
8 p.
 artikel
9 Bright visible light emission from electro-oxidized porous silicon Vial, J.C.
 1993
 185 1-4 p. 593-602
10 p.
 artikel
10 Centers of radiative and nonradiative recombination in isoelectronically doped ZnSe : Te crystals Baltramiejūnas, R.
 1993
 185 1-4 p. 245-249
5 p.
 artikel
11 Characterisation of ZnSe and other II–VI semiconductors by radioactive dopants Wichert, Thomas
 1993
 185 1-4 p. 297-307
11 p.
 artikel
12 Characterization of SiN thin films with spectroscopic ellipsometry Petalas, J.
 1993
 185 1-4 p. 342-347
6 p.
 artikel
13 Characterization of ZnSe/GaAs heterojunctions by SIMS and ellipsometry Pirzer, M.
 1993
 185 1-4 p. 580-584
5 p.
 artikel
14 Chemical order in amorphous covalent alloys Finocchi, Fabio
 1993
 185 1-4 p. 379-383
5 p.
 artikel
15 Conductivity control of GaN and fabrication of UV/blue GaN light emitting devices Akasaki, I.
 1993
 185 1-4 p. 428-432
5 p.
 artikel
16 Conference photograph 1993
 185 1-4 p. vi-
1 p.
 artikel
17 Crystal growth of III-N compounds under high nitrogen pressure Grzegory, I.
 1993
 185 1-4 p. 99-102
4 p.
 artikel
18 CVD growth and characterization of single-crystalline 6H silicon carbide Karmann, S.
 1993
 185 1-4 p. 75-78
4 p.
 artikel
19 Defects, optical absorption and electron mobility in indium and gallium nitrides Tansley, T.L.
 1993
 185 1-4 p. 190-198
9 p.
 artikel
20 Doping limits in ZnSe Laks, David B.
 1993
 185 1-4 p. 118-127
10 p.
 artikel
21 Early stages of nucleation and growth of diamond film by AES, SEM, UPS and optical reflectivity techniques: Surface composition Ferrari, L.
 1993
 185 1-4 p. 94-98
5 p.
 artikel
22 Editorial Board 1993
 185 1-4 p. ii-
1 p.
 artikel
23 Electrical and optical characterization of SiC Pensl, G.
 1993
 185 1-4 p. 264-283
20 p.
 artikel
24 Electrical characterization of II–VI compounds and devices Marshall, T.
 1993
 185 1-4 p. 433-439
7 p.
 artikel
25 Electric properties of GaN : Zn MIS-type light emitting diode Khan, Md.Rezaul Huque
 1993
 185 1-4 p. 480-484
5 p.
 artikel
26 Electronic band structure and optical properties of cubic silicon carbide crystals Gavrilenko, V.I.
 1993
 185 1-4 p. 394-399
6 p.
 artikel
27 Electronic structure and dynamical behaviour of different bound-exciton complexes in ZnSe bulk crystals Kudlek, G.H.
 1993
 185 1-4 p. 325-331
7 p.
 artikel
28 Electronic structure of copper/diamond interfaces including effects of interfacial hydrogen Lambrecht, Walter R.L.
 1993
 185 1-4 p. 512-527
16 p.
 artikel
29 Electronic structure, surface composition and long-range order in GaN Hunt, R.W.
 1993
 185 1-4 p. 415-421
7 p.
 artikel
30 Ensemble Monte Carlo calculation of electron impact ionization coefficients in bulk Ga0.5In0.5P using a k-dependent transition rate formulation Wang, Yang
 1993
 185 1-4 p. 475-479
5 p.
 artikel
31 Exciton dynamics in Cd0.33Zn0.67Te/ZnTe single quantum wells Doran, J.P.
 1993
 185 1-4 p. 566-570
5 p.
 artikel
32 Exciton luminescence of compensated SiC-6H Evstropov, V.V.
 1993
 185 1-4 p. 313-318
6 p.
 artikel
33 Far-infrared cyclotron resonance in n-3C-SiC at megagauss magnetic fields Takeyama, S.
 1993
 185 1-4 p. 384-388
5 p.
 artikel
34 Formation of macrodefects in SiC Stein, R.A.
 1993
 185 1-4 p. 211-216
6 p.
 artikel
35 Gallium and nitrogen ion implantation in MOVPE-grown ZnSe/GaAs Geurts, J.
 1993
 185 1-4 p. 174-178
5 p.
 artikel
36 Growth of diamond films from microwave plasma in CH4-CO2 mixtures Balestrino, G.
 1993
 185 1-4 p. 90-93
4 p.
 artikel
37 Growth of GaN by ECR-assisted MBE Moustakas, T.D.
 1993
 185 1-4 p. 36-49
14 p.
 artikel
38 High-efficiency electron-beam-pumped semiconductor laser emitters Gurskii, A.L.
 1993
 185 1-4 p. 505-507
3 p.
 artikel
39 High-pressure structural phase transition and electronic properties of the group-III nitrides Muñoz, A.
 1993
 185 1-4 p. 422-425
4 p.
 artikel
40 High-temperature transport of electrons in diamond Osman, Mohamed A.
 1993
 185 1-4 p. 471-474
4 p.
 artikel
41 6H-silicon carbide devices and applications Palmour, J.W.
 1993
 185 1-4 p. 461-465
5 p.
 artikel
42 Hydrogen in polycrystalline diamond Dischler, B.
 1993
 185 1-4 p. 217-221
5 p.
 artikel
43 II–VI quantum-confined Stark effect modulators Kawakami, Y.
 1993
 185 1-4 p. 496-499
4 p.
 artikel
44 Impurity incorporation and doping of diamond Kajihara, S.A.
 1993
 185 1-4 p. 144-149
6 p.
 artikel
45 Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon Bécourt, N.
 1993
 185 1-4 p. 79-84
6 p.
 artikel
46 Interdiffusion effects in the band offset modification by intralayer deposition at semiconductor homojunctions Rodríguez-Hernández, P.
 1993
 185 1-4 p. 546-550
5 p.
 artikel
47 Intracenter transitions of transition metal impurities in II–VI semiconductors Bouhelal, A.
 1993
 185 1-4 p. 255-258
4 p.
 artikel
48 Intrinsic and extrinsic absorption and luminescence in diamond Collins, Alan T.
 1993
 185 1-4 p. 284-296
13 p.
 artikel
49 Introduction Van de Walle, Chris G.
 1993
 185 1-4 p. ix-x
nvt p.
 artikel
50 Investigation of the electronic transitions of cubic SiC Logothetidis, S.
 1993
 185 1-4 p. 389-393
5 p.
 artikel
51 List of contributors 1993
 185 1-4 p. 609-611
3 p.
 artikel
52 Low-temperature MBE growth of p-type ZnSe using UV laser irradiation Simpson, J.
 1993
 185 1-4 p. 164-168
5 p.
 artikel
53 Luminescence decay of porous silicon Chen, X.
 1993
 185 1-4 p. 603-607
5 p.
 artikel
54 Luminescence from structural defects in heteroepitaxial MOVPE-grown ZnTe Naumov, A.
 1993
 185 1-4 p. 250-254
5 p.
 artikel
55 Luminescence polarization of CdSe microcrystals with hexagonal lattice structure Efros, Al.L.
 1993
 185 1-4 p. 575-579
5 p.
 artikel
56 Magneto-optics of Cu-related defects in polymorphic ZnS Thurian, P.
 1993
 185 1-4 p. 239-244
6 p.
 artikel
57 Microgun pumped semiconductor lasers: Application to CdTe-CdMnTe Molva, E.
 1993
 185 1-4 p. 490-495
6 p.
 artikel
58 Microscopic characterisation of heavy-ion implanted diamond Burchard, A.
 1993
 185 1-4 p. 150-153
4 p.
 artikel
59 Microscopic control of ZnSe-GaAs heterojunction band offsets Bratina, G.
 1993
 185 1-4 p. 557-565
9 p.
 artikel
60 MOVPE-growth and physics of ZnSe-ZnTe superlattices Cloitre, T.
 1993
 185 1-4 p. 109-111
3 p.
 artikel
61 New acceptor-related compensation mechanisms in wide band gap semiconductors Sasaki, Taizo
 1993
 185 1-4 p. 159-163
5 p.
 artikel
62 New type blue-light emitting diode using epitaxial ZnS films grown on GaAs by MOVPE Yamaga, Shigeko
 1993
 185 1-4 p. 500-504
5 p.
 artikel
63 Nonlinear absorption and photoluminescence of CuCl crystallites under size quantization of excitons Gaponenko, S.V.
 1993
 185 1-4 p. 588-592
5 p.
 artikel
64 Nonlinear spectroscopy of DA-centers in CdS crystals Baltramiejūnas, R.
 1993
 185 1-4 p. 336-341
6 p.
 artikel
65 On the composition and structure of In-ZnTe contacts Kononenko, V.K.
 1993
 185 1-4 p. 585-587
3 p.
 artikel
66 Optical physics and laser devices in II–VI quantum confined heterostructures Nurmikko, Arto V.
 1993
 185 1-4 p. 16-26
11 p.
 artikel
67 Optical study of octahedrally and tetrahedrally coordinated MnSe Heimbrodt, W.
 1993
 185 1-4 p. 357-361
5 p.
 artikel
68 Optical study of the piezoelectric field effect in (1 1 1)-oriented CdTe/CdMnTe strained quantum wells Dang, Le Si
 1993
 185 1-4 p. 551-556
6 p.
 artikel
69 PAD-investigations on MnS cluster formation within the diluted magnetic semiconductor ZnMnS Hoffmann, H.
 1993
 185 1-4 p. 259-263
5 p.
 artikel
70 Photocreation and photobleaching of a-Si N1.6:H/c-Si interface states studied by photocapacitance transient spectroscopy Godet, C.
 1993
 185 1-4 p. 542-545
4 p.
 artikel
71 Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes Wang, S.Y.
 1993
 185 1-4 p. 508-511
4 p.
 artikel
72 Physical properties of GaN and AlN under pressures up to 0.5 Mbar Perlin, P.
 1993
 185 1-4 p. 426-427
2 p.
 artikel
73 Point defects in silicon carbide Schneider, Jürgen
 1993
 185 1-4 p. 199-206
8 p.
 artikel
74 Preface Frova, A.
 1993
 185 1-4 p. vii-viii
nvt p.
 artikel
75 Progress in epitaxial growth of SiC Matsunami, Hiroyuki
 1993
 185 1-4 p. 65-74
10 p.
 artikel
76 Properties of interfaces of diamond Nemanich, R.J.
 1993
 185 1-4 p. 528-538
11 p.
 artikel
77 Pseudopotential total-energy calculations of column-V acceptors in ZnSe Kwak, K.W.
 1993
 185 1-4 p. 154-158
5 p.
 artikel
78 Quasiparticle corrections for diamond and diamond surfaces Kreβ, C.
 1993
 185 1-4 p. 400-403
4 p.
 artikel
79 Radiative recombination processes in ZnSe/ZnSe x Se1−x multiple-quantum-well structures Dabbicco, M.
 1993
 185 1-4 p. 352-356
5 p.
 artikel
80 Reconstruction of the diamond (1 1 1) surface Iarlori, Simonetta
 1993
 185 1-4 p. 539-541
3 p.
 artikel
81 Residual defect control when doping thin layers in diamond Prins, Johan F.
 1993
 185 1-4 p. 132-143
12 p.
 artikel
82 Resonant photoluminescence measurements in As- and P-doped ZnTe epilayers Wagner, H.P.
 1993
 185 1-4 p. 169-173
5 p.
 artikel
83 Resonant Raman scattering and free-exciton emission in CuGaS2 crystals Tsuboi, N.
 1993
 185 1-4 p. 348-351
4 p.
 artikel
84 Self-compensation in nitrogen-doped ZnSe Chadi, D.J.
 1993
 185 1-4 p. 128-131
4 p.
 artikel
85 Self-induced transmission and luminescence oscillations in thin CdS films Ullrich, Bruno
 1993
 185 1-4 p. 332-335
4 p.
 artikel
86 Silicon carbide and SiC-AIN solid-solution p-n structures grown by liquid-phase epitaxy Dmitriev, V.A.
 1993
 185 1-4 p. 440-452
13 p.
 artikel
87 Site-selective study of picosecond relaxation processes of Ni2+ in polymorphic ZnS Heitz, R.
 1993
 185 1-4 p. 234-238
5 p.
 artikel
88 Spatially resolved cathodoluminescence of semiconductors Trager-Cowan, C.
 1993
 185 1-4 p. 319-324
6 p.
 artikel
89 Structural and electronic properties of SiC polytypes Qteish, A.
 1993
 185 1-4 p. 366-378
13 p.
 artikel
90 Study of defects in wide band gap semiconductors by electron paramagnetic resonance Fanciulli, M.
 1993
 185 1-4 p. 228-233
6 p.
 artikel
91 Subject index 1993
 185 1-4 p. 613-616
4 p.
 artikel
92 Substrate-quality, single-crystal ZnSe for homoepitaxy using seeded physical vapor transport Cotal, H.L.
 1993
 185 1-4 p. 103-108
6 p.
 artikel
93 Temperature dependence of electrical properties of 3C-SiC(1 1 1) heteroepitaxial films Yamanaka, Mitsugu
 1993
 185 1-4 p. 308-312
5 p.
 artikel
94 The electronic structure of gallium nitride Palummo, Maurizia
 1993
 185 1-4 p. 404-409
6 p.
 artikel
95 The 2.96 eV centre in diamond Pereira, E.
 1993
 185 1-4 p. 222-227
6 p.
 artikel
96 The origin of the Stokes shift Yang, Fang
 1993
 185 1-4 p. 362-365
4 p.
 artikel
97 Theory of impurities in diamond Briddon, P.R.
 1993
 185 1-4 p. 179-189
11 p.
 artikel
98 Thin films and devices of diamond, silicon carbide and gallium nitride Davis, Robert F.
 1993
 185 1-4 p. 1-15
15 p.
 artikel
99 Time-resolved luminescence from II–VI quantum dots Schülzgen, A.
 1993
 185 1-4 p. 571-574
4 p.
 artikel
100 ZnSe-based laser diodes and p-type doping of ZnSe Ohkawa, K.
 1993
 185 1-4 p. 112-117
6 p.
 artikel
                             100 gevonden resultaten
 
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