nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Aluminium BSF in silicon solar cells
|
Kaminski, A |
|
2002 |
72 |
1-4 |
p. 373-379 7 p. |
artikel |
2 |
Anodic and optical characterisation of stain-etched porous silicon antireflection coatings
|
Guerrero-Lemus, R |
|
2002 |
72 |
1-4 |
p. 495-501 7 p. |
artikel |
3 |
A novel multicrystalline silicon solar cell using grain boundary etching treatment and transparent conducting oxide
|
Lim, Dong Gun |
|
2002 |
72 |
1-4 |
p. 571-578 8 p. |
artikel |
4 |
A simple passivation technique for the edge area of silicon solar cells improves the efficiency
|
Hejjo Al-Rifai, M |
|
2002 |
72 |
1-4 |
p. 327-333 7 p. |
artikel |
5 |
Author index to volume 72
|
|
|
2002 |
72 |
1-4 |
p. 629-635 7 p. |
artikel |
6 |
Classification of shunting mechanisms in crystalline silicon solar cells
|
Langenkamp, M. |
|
2002 |
72 |
1-4 |
p. 433-440 8 p. |
artikel |
7 |
Comparative studies of EFG poly-Si grown by different procedures
|
Pivac, B. |
|
2002 |
72 |
1-4 |
p. 165-171 7 p. |
artikel |
8 |
Comparing improved state-of-the-art to former EFG Si-ribbons with respect to solar cell processing and hydrogen passivation
|
Geiger, P |
|
2002 |
72 |
1-4 |
p. 155-163 9 p. |
artikel |
9 |
Comparison between SiN x :H and hydrogen passivation of electromagnetically casted multicrystalline silicon material
|
Fourmond, E. |
|
2002 |
72 |
1-4 |
p. 353-359 7 p. |
artikel |
10 |
Comparison of phosphorus gettering for different multicrystalline silicon
|
Boudaden, J. |
|
2002 |
72 |
1-4 |
p. 381-387 7 p. |
artikel |
11 |
Cost-effective methods of texturing for silicon solar cells
|
Yerokhov, V.Y. |
|
2002 |
72 |
1-4 |
p. 291-298 8 p. |
artikel |
12 |
Crystalline silicon thin films with porous Si backside reflector (abstract only)
|
Bilyalov, R. |
|
2002 |
72 |
1-4 |
p. 221- 1 p. |
artikel |
13 |
Current collecting channels in RGS silicon solar cells—are they useful?
|
Hahn, G |
|
2002 |
72 |
1-4 |
p. 453-464 12 p. |
artikel |
14 |
Defect and impurity diagnostics and process monitoring
|
Warta, Wilhelm |
|
2002 |
72 |
1-4 |
p. 389-401 13 p. |
artikel |
15 |
Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride
|
Duerinckx, F |
|
2002 |
72 |
1-4 |
p. 231-246 16 p. |
artikel |
16 |
Defect recognition and impurity detection techniques in crystalline silicon for solar cells
|
Istratov, A.A |
|
2002 |
72 |
1-4 |
p. 441-451 11 p. |
artikel |
17 |
Defects in polycrystalline silicon studied by IBICC
|
Borjanović, V |
|
2002 |
72 |
1-4 |
p. 487-494 8 p. |
artikel |
18 |
Development of a technology of silicon production by recycling phosphorous industry wastes
|
Mukashev, B.N. |
|
2002 |
72 |
1-4 |
p. 605-611 7 p. |
artikel |
19 |
Development of RTP for industrial solar cell processing
|
Horzel, J. |
|
2002 |
72 |
1-4 |
p. 263-269 7 p. |
artikel |
20 |
Double porous silicon layer on multi-crystalline Si for photovoltaic application
|
Lipiński, M |
|
2002 |
72 |
1-4 |
p. 271-276 6 p. |
artikel |
21 |
Dry processing of silicon solar cells in a large area microwave plasma reactor
|
Gazuz, V |
|
2002 |
72 |
1-4 |
p. 277-284 8 p. |
artikel |
22 |
Effect of heat treatment on carbon in multicrystalline silicon
|
Yang, Deren |
|
2002 |
72 |
1-4 |
p. 541-549 9 p. |
artikel |
23 |
Electrical activity of deep traps in p-type Si
|
Kaniewska, M |
|
2002 |
72 |
1-4 |
p. 509-515 7 p. |
artikel |
24 |
Electrical activity of grain boundaries in silicon bicrystals and its modification by hydrogen plasma treatment
|
Fedotov, A. |
|
2002 |
72 |
1-4 |
p. 589-595 7 p. |
artikel |
25 |
Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics
|
Durand, Francis |
|
2002 |
72 |
1-4 |
p. 125-132 8 p. |
artikel |
26 |
EMRS 2001 Symposium E: Crystalline Silicon for Solar Cells
|
Kittler, M |
|
2002 |
72 |
1-4 |
p. 1-2 2 p. |
artikel |
27 |
Experimental and theoretical investigations of a new potential barrier due to sharp a-Si/c-Si heterointerfaces buried in the solar cell emitter
|
Ley, M |
|
2002 |
72 |
1-4 |
p. 613-619 7 p. |
artikel |
28 |
Fast LBIC in-line characterization for process quality control in the photovoltaic industry
|
Acciarri, M |
|
2002 |
72 |
1-4 |
p. 417-424 8 p. |
artikel |
29 |
General trends about photovoltaics based on crystalline silicon
|
Bruton, T.M |
|
2002 |
72 |
1-4 |
p. 3-10 8 p. |
artikel |
30 |
Gettering of impurities in solar silicon
|
Périchaud, I |
|
2002 |
72 |
1-4 |
p. 315-326 12 p. |
artikel |
31 |
Hydrogen passivation of defects in EFG ribbon silicon
|
Mittelstädt, L. |
|
2002 |
72 |
1-4 |
p. 255-261 7 p. |
artikel |
32 |
Impurities and defects in multicrystalline silicon for solar cells: low-temperature photoluminescence investigations
|
Mudryi, A.V |
|
2002 |
72 |
1-4 |
p. 503-508 6 p. |
artikel |
33 |
Irradiation effects on polycrystalline silicon
|
Borjanović, V |
|
2002 |
72 |
1-4 |
p. 183-189 7 p. |
artikel |
34 |
Large size multicrystalline silicon ingots
|
Ferrazza, Francesca |
|
2002 |
72 |
1-4 |
p. 77-81 5 p. |
artikel |
35 |
Mechanisms and computer modelling of transition element gettering in silicon
|
Schröter, W |
|
2002 |
72 |
1-4 |
p. 299-313 15 p. |
artikel |
36 |
Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications
|
Nakajima, K. |
|
2002 |
72 |
1-4 |
p. 93-100 8 p. |
artikel |
37 |
Mono- and tri-crystalline Si for PV application
|
Endrös, A.L |
|
2002 |
72 |
1-4 |
p. 109-124 16 p. |
artikel |
38 |
Multicrystalline silicon prepared by electromagnetic continuous pulling: recent results and comparison to directional solidification material
|
Perichaud, I. |
|
2002 |
72 |
1-4 |
p. 101-107 7 p. |
artikel |
39 |
New near-IR effect due to an amorphized substructure inserted in a c-Si solar-cell emitter
|
Kuznicki, Z.T. |
|
2002 |
72 |
1-4 |
p. 621-628 8 p. |
artikel |
40 |
n–p Junction formation in p-type silicon by hydrogen ion implantation
|
Barakel, D |
|
2002 |
72 |
1-4 |
p. 285-290 6 p. |
artikel |
41 |
Numerical simulations for silicon crystallization processes—examples from ingot and ribbon casting
|
Steinbach, I. |
|
2002 |
72 |
1-4 |
p. 59-68 10 p. |
artikel |
42 |
Optical improved structure of polycrystalline silicon-based thin-film solar cell
|
Budianu, Elena |
|
2002 |
72 |
1-4 |
p. 223-229 7 p. |
artikel |
43 |
Oxygen and lattice distortions in multicrystalline silicon
|
Möller, H.J. |
|
2002 |
72 |
1-4 |
p. 403-416 14 p. |
artikel |
44 |
Oxygen in Czochralski silicon used for solar cells
|
Yang, Deren |
|
2002 |
72 |
1-4 |
p. 133-138 6 p. |
artikel |
45 |
Passivation of silicon by silicon nitride films
|
Kunst, M |
|
2002 |
72 |
1-4 |
p. 335-341 7 p. |
artikel |
46 |
PEEM—a spectromicroscopic tool for mc-Si surface evaluation
|
Hoffmann, P |
|
2002 |
72 |
1-4 |
p. 517-523 7 p. |
artikel |
47 |
Phosphorous emitter etch back and bulk hydrogenation by means of an ECR-hydrogen plasma applied to form a selective emitter structure on mc-Si
|
Debarge, L |
|
2002 |
72 |
1-4 |
p. 247-254 8 p. |
artikel |
48 |
Plasma-refining process to provide solar-grade silicon
|
Delannoy, Y |
|
2002 |
72 |
1-4 |
p. 69-75 7 p. |
artikel |
49 |
Refining of metallurgical-grade silicon by inductive plasma
|
Alemany, C |
|
2002 |
72 |
1-4 |
p. 41-48 8 p. |
artikel |
50 |
Resistivity topography: a grain boundary characterisation method
|
Barranco Dı́az, M |
|
2002 |
72 |
1-4 |
p. 473-486 14 p. |
artikel |
51 |
Room-temperature luminescence and electron-beam-induced current (EBIC) recombination behaviour of crystal defects in multicrystalline silicon
|
Kittler, M |
|
2002 |
72 |
1-4 |
p. 465-472 8 p. |
artikel |
52 |
SEM observation, photoconductivity investigation and I–V study of Si structures with patterned morphology for solar irradiance detection
|
Gorbach, T.Ya |
|
2002 |
72 |
1-4 |
p. 525-532 8 p. |
artikel |
53 |
Silicon feedstock for the multi-crystalline photovoltaic industry
|
Sarti, Dominique |
|
2002 |
72 |
1-4 |
p. 27-40 14 p. |
artikel |
54 |
Silicon ingot casting: process development by numerical simulations
|
Franke, D |
|
2002 |
72 |
1-4 |
p. 83-92 10 p. |
artikel |
55 |
Silicon ribbons and foils—state of the art
|
Kalejs, Juris P |
|
2002 |
72 |
1-4 |
p. 139-153 15 p. |
artikel |
56 |
Silicon sheet from silane: first results
|
Rodrigues Pinto, C |
|
2002 |
72 |
1-4 |
p. 209-217 9 p. |
artikel |
57 |
Silicon solar cells with antireflection diamond-like carbon and silicon carbide films
|
Klyui, N.I. |
|
2002 |
72 |
1-4 |
p. 597-603 7 p. |
artikel |
58 |
Silicon tubes by a closed molten zone: a characterisation study
|
Gamboa, R.M |
|
2002 |
72 |
1-4 |
p. 173-181 9 p. |
artikel |
59 |
Simulation of the crystallisation of silicon ribbons on substrate
|
Apel, M |
|
2002 |
72 |
1-4 |
p. 201-208 8 p. |
artikel |
60 |
Solar cells from upgraded metallurgical grade (UMG) and plasma-purified UMG multi-crystalline silicon substrates
|
De Wolf, S. |
|
2002 |
72 |
1-4 |
p. 49-58 10 p. |
artikel |
61 |
Solar cells prepared on multicrystalline silicon subjected to new gettering and passivation treatments
|
Litovchenko, V.G. |
|
2002 |
72 |
1-4 |
p. 343-351 9 p. |
artikel |
62 |
Solar grade silicon feedstock supply for PV industry
|
Woditsch, Peter |
|
2002 |
72 |
1-4 |
p. 11-26 16 p. |
artikel |
63 |
Study of an argon–hydrogen RF inductive thermal plasma torch used for silicon deposition by optical emission spectroscopy
|
Bourg, F |
|
2002 |
72 |
1-4 |
p. 361-371 11 p. |
artikel |
64 |
Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements
|
Farhi, G |
|
2002 |
72 |
1-4 |
p. 551-558 8 p. |
artikel |
65 |
Subject index to volume 72
|
|
|
2002 |
72 |
1-4 |
p. 637-639 3 p. |
artikel |
66 |
Surface analyses of polycrystalline and Cz–Si wafers
|
Castaldini, A |
|
2002 |
72 |
1-4 |
p. 425-432 8 p. |
artikel |
67 |
Surface photovoltage analysis of crystalline silicon for photovoltaic applications
|
Castaldini, A |
|
2002 |
72 |
1-4 |
p. 559-569 11 p. |
artikel |
68 |
The future of crystalline silicon films on foreign substrates
|
|
|
2002 |
72 |
1-4 |
p. 219- 1 p. |
artikel |
69 |
The influence of the composition of Si–Ge mixed crystals on thermal diffusivity—photoacoustic approach
|
Patrin, A. |
|
2002 |
72 |
1-4 |
p. 579-587 9 p. |
artikel |
70 |
Thin crystalline silicon solar cells
|
Willeke, G.P. |
|
2002 |
72 |
1-4 |
p. 191-200 10 p. |
artikel |
71 |
Two-dimensional resolution of minority carrier diffusion constants in different silicon materials
|
Sontag, D |
|
2002 |
72 |
1-4 |
p. 533-539 7 p. |
artikel |