nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Absorption coefficient spectra of μc-Si in the low-energy region 0.4–1.2eV
|
Kitao, J. |
|
2001 |
66 |
1-4 |
p. 245-251 7 p. |
artikel |
2 |
A detailed study of H2 plasma passivation effects on GaAs/Si solar cell
|
Wang, G. |
|
2001 |
66 |
1-4 |
p. 599-605 7 p. |
artikel |
3 |
Advanced III–V solar cell structures grown by MOVPE
|
Bett, A.W |
|
2001 |
66 |
1-4 |
p. 541-550 10 p. |
artikel |
4 |
A large discrepancy between CPM and ESR defect densities in light-soaked a-Si:H
|
Shimizu, Tatsuo |
|
2001 |
66 |
1-4 |
p. 203-207 5 p. |
artikel |
5 |
Amorphous and microcrystalline silicon solar cells prepared at high deposition rates using RF (13.56MHz) plasma excitation frequencies
|
Rech, B |
|
2001 |
66 |
1-4 |
p. 267-273 7 p. |
artikel |
6 |
Analysis of energy balance of electricity and heat generated by TPV generators
|
Amano, Takashi |
|
2001 |
66 |
1-4 |
p. 579-583 5 p. |
artikel |
7 |
Analysis of free-carrier optical absorption used for characterization of microcrystalline silicon films
|
Sameshima, T |
|
2001 |
66 |
1-4 |
p. 389-395 7 p. |
artikel |
8 |
A new perspective on the characterization of materials for a-Si:H solar cells
|
Jiao, L. |
|
2001 |
66 |
1-4 |
p. 231-237 7 p. |
artikel |
9 |
An overview of thermophotovoltaic generation of electricity
|
Coutts, Timothy J |
|
2001 |
66 |
1-4 |
p. 443-452 10 p. |
artikel |
10 |
Application of real-time in situ spectroscopic ellipsometry and infrared spectroscopy for characterizing interface structure of a-Si:H layer
|
Fujiwara, H. |
|
2001 |
66 |
1-4 |
p. 209-215 7 p. |
artikel |
11 |
Characterisation of light trapping in silicon films by spectral photoconductance measurements
|
Campbell, Patrick |
|
2001 |
66 |
1-4 |
p. 187-193 7 p. |
artikel |
12 |
Characteristics of Al0.36Ga0.64As/GaAs tandem solar cells with pp−n−n structural AlGaAs solar cells
|
Takahashi, Ken |
|
2001 |
66 |
1-4 |
p. 517-524 8 p. |
artikel |
13 |
Characteristics of GaAs-based concentrator cells
|
Araki, Kenji |
|
2001 |
66 |
1-4 |
p. 559-565 7 p. |
artikel |
14 |
Characterization of crystalline silicon grown by plasma-enhanced CVD for thin-film solar cells
|
Kurobe, Ken-ichi |
|
2001 |
66 |
1-4 |
p. 1-9 9 p. |
artikel |
15 |
Characterization of pulsed laser crystallization of silicon thin film
|
Ishigame, S |
|
2001 |
66 |
1-4 |
p. 381-387 7 p. |
artikel |
16 |
Charge transport in microcrystalline Si – the specific features
|
Kočka, J. |
|
2001 |
66 |
1-4 |
p. 61-71 11 p. |
artikel |
17 |
Cost effective and high-performance thin film Si solar cell towards the 21st century
|
Yamamoto, Kenji |
|
2001 |
66 |
1-4 |
p. 117-125 9 p. |
artikel |
18 |
Development and manufacturing of CIS thin film solar modules
|
Karg, Franz H |
|
2001 |
66 |
1-4 |
p. 645-653 9 p. |
artikel |
19 |
Development of both-side junction silicon space solar cells
|
Tonomura, Yoshifumi |
|
2001 |
66 |
1-4 |
p. 551-558 8 p. |
artikel |
20 |
Development of highly efficient thin film silicon solar cells on texture-etched zinc oxide-coated glass substrates
|
Müller, J |
|
2001 |
66 |
1-4 |
p. 275-281 7 p. |
artikel |
21 |
Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition
|
Masuda, Atsushi |
|
2001 |
66 |
1-4 |
p. 259-265 7 p. |
artikel |
22 |
Effect of film thickness on electrical property of microcrystalline silicon
|
Andoh, Nobuyuki |
|
2001 |
66 |
1-4 |
p. 437-441 5 p. |
artikel |
23 |
Effect of front and back contact roughness on optical properties of single junction a–Si:H solar cells
|
Zeman, M. |
|
2001 |
66 |
1-4 |
p. 353-359 7 p. |
artikel |
24 |
Effect of halogen additives on the stability of a-Si:H films deposited at a high-growth rate
|
Nishimoto, Tomonori |
|
2001 |
66 |
1-4 |
p. 179-185 7 p. |
artikel |
25 |
Effect of light degradation on bifacial Si solar cells
|
Ohtsuka, H. |
|
2001 |
66 |
1-4 |
p. 51-59 9 p. |
artikel |
26 |
24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates
|
Zhao, Jianhua |
|
2001 |
66 |
1-4 |
p. 27-36 10 p. |
artikel |
27 |
Epitaxial growth of polycrystalline films formed by microwave plasma chemical vapor deposition at low temperatures
|
Andoh, Nobuyuki |
|
2001 |
66 |
1-4 |
p. 431-435 5 p. |
artikel |
28 |
ESA's space solar array technology programme current status and future activities
|
Fernandez Lisbona, Emilio |
|
2001 |
66 |
1-4 |
p. 487-494 8 p. |
artikel |
29 |
Experiments on anisotropic etching of Si in TMAH
|
You, Jae Sung |
|
2001 |
66 |
1-4 |
p. 37-44 8 p. |
artikel |
30 |
Fabrication and simulation of GaSb thermophotovoltaic cells
|
Sulima, O.V |
|
2001 |
66 |
1-4 |
p. 533-540 8 p. |
artikel |
31 |
Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications
|
Tomm, Y |
|
2001 |
66 |
1-4 |
p. 369-374 6 p. |
artikel |
32 |
Formation of stable Si network at low T s by controlling chemical reaction at growing surface
|
Shimizu, I. |
|
2001 |
66 |
1-4 |
p. 127-136 10 p. |
artikel |
33 |
GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors
|
Moto, Akihiro |
|
2001 |
66 |
1-4 |
p. 585-592 8 p. |
artikel |
34 |
Heteroepitaxial technologies of III–V on Si
|
Kawanami, H |
|
2001 |
66 |
1-4 |
p. 479-486 8 p. |
artikel |
35 |
High current, thin silicon-on-ceramic solar cell
|
Barnett, A.M |
|
2001 |
66 |
1-4 |
p. 45-50 6 p. |
artikel |
36 |
High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
|
Agert, C |
|
2001 |
66 |
1-4 |
p. 637-644 8 p. |
artikel |
37 |
High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates
|
Takamoto, Tatsuya |
|
2001 |
66 |
1-4 |
p. 511-516 6 p. |
artikel |
38 |
High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD
|
Endo, Koji |
|
2001 |
66 |
1-4 |
p. 283-288 6 p. |
artikel |
39 |
High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics
|
Carlin, J.A |
|
2001 |
66 |
1-4 |
p. 621-630 10 p. |
artikel |
40 |
High-pressure plasma CVD for high-quality amorphous silicon
|
Isomura, Masao |
|
2001 |
66 |
1-4 |
p. 375-380 6 p. |
artikel |
41 |
High-quality narrow gap (∼1.52eV) a-Si:H with improved stability fabricated by excited inert gas treatment
|
Sato, H |
|
2001 |
66 |
1-4 |
p. 321-327 7 p. |
artikel |
42 |
High-quality thin film GaAs bonded to Si using SeS2 — A new approach for high-efficiency tandem solar cells
|
Arokiaraj, J |
|
2001 |
66 |
1-4 |
p. 607-614 8 p. |
artikel |
43 |
High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma
|
Sakikawa, Nobuki |
|
2001 |
66 |
1-4 |
p. 337-343 7 p. |
artikel |
44 |
High-rate deposition of polycrystalline silicon thin films by hot wire cell method using disilane
|
Ichikawa, Mitsuru |
|
2001 |
66 |
1-4 |
p. 225-230 6 p. |
artikel |
45 |
High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma
|
Fukawa, Makoto |
|
2001 |
66 |
1-4 |
p. 217-223 7 p. |
artikel |
46 |
Impact and options for boron diffusions in buried contact solar cells
|
Slade, Alexander M |
|
2001 |
66 |
1-4 |
p. 11-15 5 p. |
artikel |
47 |
Improved efficiency of Al0.36Ga0.64As solar cells with a pp−n−n structure
|
Takahashi, Ken |
|
2001 |
66 |
1-4 |
p. 525-532 8 p. |
artikel |
48 |
Improved p–i–n solar cells structure for narrow bandgap a-Si:H prepared by Ar* chemical annealing at high temperatures
|
Komaru, T. |
|
2001 |
66 |
1-4 |
p. 329-335 7 p. |
artikel |
49 |
Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6
|
Goto, Shu |
|
2001 |
66 |
1-4 |
p. 631-636 6 p. |
artikel |
50 |
Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application
|
Akahori, K |
|
2001 |
66 |
1-4 |
p. 593-598 6 p. |
artikel |
51 |
Index
|
|
|
2001 |
66 |
1-4 |
p. 655-665 11 p. |
artikel |
52 |
Index
|
|
|
2001 |
66 |
1-4 |
p. 667-670 4 p. |
artikel |
53 |
In situ hydrogen plasma treatment for improved transport of (400) oriented polycrystalline silicon films
|
Suemasu, A. |
|
2001 |
66 |
1-4 |
p. 313-320 8 p. |
artikel |
54 |
Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM
|
Breymesser, A |
|
2001 |
66 |
1-4 |
p. 171-177 7 p. |
artikel |
55 |
Mass-production of large size a-Si modules and future plan
|
Tawada, Yoshihisa |
|
2001 |
66 |
1-4 |
p. 95-105 11 p. |
artikel |
56 |
Microcrystalline/micromorph silicon thin-film solar cells prepared by VHF-GD technique
|
Meier, J |
|
2001 |
66 |
1-4 |
p. 73-84 12 p. |
artikel |
57 |
Microcrystalline n-i-p solar cells deposited at 10Å/s by VHF-GD
|
Feitknecht, L |
|
2001 |
66 |
1-4 |
p. 397-403 7 p. |
artikel |
58 |
Microcrystalline Si films deposited from dichlorosilane using RF-PECVD
|
Guo, Lihui |
|
2001 |
66 |
1-4 |
p. 405-412 8 p. |
artikel |
59 |
Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate
|
Niikura, C |
|
2001 |
66 |
1-4 |
p. 421-429 9 p. |
artikel |
60 |
Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD
|
Matsuura, D |
|
2001 |
66 |
1-4 |
p. 305-311 7 p. |
artikel |
61 |
Modeling charge-carrier transport and generation–recombination mechanisms in p+n+ a-Si tunnel junctions
|
Furlan, J |
|
2001 |
66 |
1-4 |
p. 147-153 7 p. |
artikel |
62 |
More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution
|
Ziegler, Y |
|
2001 |
66 |
1-4 |
p. 413-419 7 p. |
artikel |
63 |
Numerical modelling of trap-assisted tunnelling mechanism in a-Si:H and μc-Si n/p structures and tandem solar cells
|
Vukadinović, M |
|
2001 |
66 |
1-4 |
p. 361-367 7 p. |
artikel |
64 |
Performance of p-type silicon-oxide windows in amorphous silicon solar cell
|
Matsumoto, Y. |
|
2001 |
66 |
1-4 |
p. 163-170 8 p. |
artikel |
65 |
Production technology for amorphous silicon-based flexible solar cells
|
Ichikawa, Yukimi |
|
2001 |
66 |
1-4 |
p. 107-115 9 p. |
artikel |
66 |
Progress toward high-efficiency (>24%) and low-cost multi-junction solar cell production
|
Chiang, P.K |
|
2001 |
66 |
1-4 |
p. 615-620 6 p. |
artikel |
67 |
Properties of amorphous silicon solar cells fabricated from SiH2Cl2
|
Shimizu, S |
|
2001 |
66 |
1-4 |
p. 289-295 7 p. |
artikel |
68 |
Radiation-induced defects in solar cell materials
|
Bourgoin, J.C |
|
2001 |
66 |
1-4 |
p. 467-477 11 p. |
artikel |
69 |
Radiation resistance of MBE-grown GaInP/GaAs cascade solar cells flown onboard Equator-S satellite
|
Haapamaa, J |
|
2001 |
66 |
1-4 |
p. 573-578 6 p. |
artikel |
70 |
Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells: steps to next-generation PV cells
|
Karam, Nasser H |
|
2001 |
66 |
1-4 |
p. 453-466 14 p. |
artikel |
71 |
Role of hydrogen in hydrogenated microcrystalline silicon
|
Itoh, T |
|
2001 |
66 |
1-4 |
p. 239-244 6 p. |
artikel |
72 |
Shadow protection for tandem solar cells in space
|
Taylor, S.J |
|
2001 |
66 |
1-4 |
p. 567-571 5 p. |
artikel |
73 |
Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells
|
de Angelis, N |
|
2001 |
66 |
1-4 |
p. 495-500 6 p. |
artikel |
74 |
Spatial distribution of high-density microwave plasma for fast deposition of microcrystalline silicon film
|
Shirai, Hajime |
|
2001 |
66 |
1-4 |
p. 137-145 9 p. |
artikel |
75 |
Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR techniques
|
Ohkawa, K. |
|
2001 |
66 |
1-4 |
p. 297-303 7 p. |
artikel |
76 |
Temperature-dependent study of the radiative losses in double-quantum well solar cells
|
Kluftinger, Benjamin |
|
2001 |
66 |
1-4 |
p. 501-509 9 p. |
artikel |
77 |
The creation of hydrogen radicals by the hot-wire technique and its application for μc-Si:H
|
Harada, H |
|
2001 |
66 |
1-4 |
p. 253-258 6 p. |
artikel |
78 |
The influence of doping on charge carrier transport in a-Si:H
|
Herm, D |
|
2001 |
66 |
1-4 |
p. 195-201 7 p. |
artikel |
79 |
The use of silicon nitride in buried contact solar cells
|
Vogl, Bernhard |
|
2001 |
66 |
1-4 |
p. 17-25 9 p. |
artikel |
80 |
Thickness dependence of microcrystalline silicon solar cell properties
|
Vetterl, O |
|
2001 |
66 |
1-4 |
p. 345-351 7 p. |
artikel |
81 |
Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells
|
Okamoto, Shingo |
|
2001 |
66 |
1-4 |
p. 85-94 10 p. |
artikel |
82 |
Wide optical band gap window layers for solar cells
|
Yu, Zhenrui |
|
2001 |
66 |
1-4 |
p. 155-162 8 p. |
artikel |