no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Advanced cost-effective crystalline silicon solar cell technologies
|
Nijs, J.F |
|
2001 |
65 |
1-4 |
p. 249-259 11 p. |
article |
2 |
Aluminium-induced crystallisation of silicon on glass for thin-film solar cells
|
Nast, Oliver |
|
2001 |
65 |
1-4 |
p. 385-392 8 p. |
article |
3 |
Aluminum alloy back p–n junction dendritic web silicon solar cell
|
Meier, D.L |
|
2001 |
65 |
1-4 |
p. 621-627 7 p. |
article |
4 |
A new generation of crystalline silicon solar cells: Simple processing and record efficiencies for industrial-size devices
|
Hezel, R. |
|
2001 |
65 |
1-4 |
p. 311-316 6 p. |
article |
5 |
An overview of silicon ribbon growth technology
|
Hanoka, Jack I |
|
2001 |
65 |
1-4 |
p. 231-237 7 p. |
article |
6 |
An Si concentrator cell by single photolithography process
|
Araki, Kenji |
|
2001 |
65 |
1-4 |
p. 437-443 7 p. |
article |
7 |
Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters
|
Schumacher, Jürgen O |
|
2001 |
65 |
1-4 |
p. 95-103 9 p. |
article |
8 |
Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics
|
Kalinushkin, V.P. |
|
2001 |
65 |
1-4 |
p. 47-54 8 p. |
article |
9 |
A simple and efficient process for fabricating high efficiency polycrystalline silicon ribbon solar cells
|
Elgamel, Hussam Eldin A |
|
2001 |
65 |
1-4 |
p. 561-564 4 p. |
article |
10 |
Au/Poly(3-methylthiophene)/10-(p-nitrobenzyl)-2(10H)-phenazinone/Al organic hetero-junction photovoltaic device
|
Mikayama, Takeshi |
|
2001 |
65 |
1-4 |
p. 133-139 7 p. |
article |
11 |
Boron ion implantation effects in C60 films
|
Narayanan, K.L |
|
2001 |
65 |
1-4 |
p. 29-35 7 p. |
article |
12 |
Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films
|
Bourdais, S |
|
2001 |
65 |
1-4 |
p. 487-493 7 p. |
article |
13 |
Compound polycrystalline solar cells:
|
Birkmire, Robert W |
|
2001 |
65 |
1-4 |
p. 17-28 12 p. |
article |
14 |
Degradation of carrier lifetime in Cz silicon solar cells
|
Glunz, S.W. |
|
2001 |
65 |
1-4 |
p. 219-229 11 p. |
article |
15 |
Determination of the density of states in heavily doped regions of silicon solar cells
|
Neuhaus, D.H |
|
2001 |
65 |
1-4 |
p. 105-110 6 p. |
article |
16 |
Development of high-efficiency thin-film Si solar cells using zone-melting recrystallization
|
Morikawa, H |
|
2001 |
65 |
1-4 |
p. 261-268 8 p. |
article |
17 |
Development of thin film solar cell based on Cu2ZnSnS4 thin films
|
Katagiri, Hironori |
|
2001 |
65 |
1-4 |
p. 141-148 8 p. |
article |
18 |
2D-numerical analysis and optimum design of thin film silicon solar cells
|
Matsui, Takuya |
|
2001 |
65 |
1-4 |
p. 87-93 7 p. |
article |
19 |
Easy-to-fabricate 20% efficient large-area silicon solar cells
|
Metz, A |
|
2001 |
65 |
1-4 |
p. 325-330 6 p. |
article |
20 |
Effect of high temperature steam annealing for SiO2 passivation
|
Abe, Y |
|
2001 |
65 |
1-4 |
p. 607-612 6 p. |
article |
21 |
Effect of hydrogen radical annealing on SiN passivated solar cells
|
Muramatsu, Shin-ichi |
|
2001 |
65 |
1-4 |
p. 599-606 8 p. |
article |
22 |
Effect of thermal annealing on minority-carrier lifetimes in multicrystalline Si wafers
|
Mimura, M. |
|
2001 |
65 |
1-4 |
p. 459-463 5 p. |
article |
23 |
Effects of grain boundaries in polycrystalline silicon thin-film solar cells based on the two-dimensional model
|
Kurobe, Ken-ichi |
|
2001 |
65 |
1-4 |
p. 201-209 9 p. |
article |
24 |
Electrical and optical properties of ZnO thin film as a function of deposition parameters
|
Jeong, Woon-Jo |
|
2001 |
65 |
1-4 |
p. 37-45 9 p. |
article |
25 |
Electrical properties of multicrystalline silicon produced by electromagnetic casting process: Degradation and improvement
|
Boudaden, J |
|
2001 |
65 |
1-4 |
p. 517-523 7 p. |
article |
26 |
Electrodeposition of pyrite(FeS2) thin films for photovoltaic cells
|
Nakamura, Sigeyuki |
|
2001 |
65 |
1-4 |
p. 79-85 7 p. |
article |
27 |
Excellent thermal stability of remote plasma-enhanced chemical vapour deposited silicon nitride films for the rear of screen-printed bifacial silicon solar cells
|
Lenkeit, B |
|
2001 |
65 |
1-4 |
p. 317-323 7 p. |
article |
28 |
Experimental evidence of very high open-circuit voltages of inversion–layer silicon solar cells
|
Hampe, C |
|
2001 |
65 |
1-4 |
p. 331-337 7 p. |
article |
29 |
Fabrication and characterisation of parallel multijunction thin film silicon solar cells
|
Keevers, Mark J |
|
2001 |
65 |
1-4 |
p. 363-368 6 p. |
article |
30 |
Field effect surface passivation of SiO2/Si interfaces by heat treatment with high-pressure H2O vapor
|
Sakamoto, K |
|
2001 |
65 |
1-4 |
p. 565-570 6 p. |
article |
31 |
High-efficiency PERL and PERT silicon solar cells on FZ and MCZ substrates
|
Zhao, Jianhua |
|
2001 |
65 |
1-4 |
p. 429-435 7 p. |
article |
32 |
Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride
|
Schmidt, Jan |
|
2001 |
65 |
1-4 |
p. 585-591 7 p. |
article |
33 |
High performance light trapping textures for monocrystalline silicon solar cells
|
Campbell, Patrick |
|
2001 |
65 |
1-4 |
p. 369-375 7 p. |
article |
34 |
High-pressure H2O vapor heating used for passivation of SiO2/Si interfaces
|
Sakamoto, K |
|
2001 |
65 |
1-4 |
p. 571-576 6 p. |
article |
35 |
Improvements in numerical modelling of highly injected crystalline silicon solar cells
|
Altermatt, Pietro P. |
|
2001 |
65 |
1-4 |
p. 149-155 7 p. |
article |
36 |
Index
|
|
|
2001 |
65 |
1-4 |
p. 629-637 9 p. |
article |
37 |
Index
|
|
|
2001 |
65 |
1-4 |
p. 639-641 3 p. |
article |
38 |
In situ monitoring of the deposition of a-Si:H/c-Si heterojunctions by transient photoconductivity measurements
|
von Aichberger, S |
|
2001 |
65 |
1-4 |
p. 417-422 6 p. |
article |
39 |
Interconnection through vias for improved efficiency and easy module manufacturing of crystalline silicon solar cells
|
Bultman, J.H |
|
2001 |
65 |
1-4 |
p. 339-345 7 p. |
article |
40 |
Investigation of the effect of sol processing parameters on the photoelectrical properties of dye-sensitized TiO2 solar cells
|
Srikanth, K |
|
2001 |
65 |
1-4 |
p. 171-177 7 p. |
article |
41 |
Investigations on low-cost back-contact silicon solar cells
|
Kress, A |
|
2001 |
65 |
1-4 |
p. 555-560 6 p. |
article |
42 |
Latest results on semitransparent POWER silicon solar cells
|
Boueke, Arnd |
|
2001 |
65 |
1-4 |
p. 549-553 5 p. |
article |
43 |
Metallisation patterns for interconnection through holes
|
Burgers, A.R |
|
2001 |
65 |
1-4 |
p. 347-353 7 p. |
article |
44 |
Microstructure of epitaxial layers deposited on silicon by ion assisted deposition
|
Krinke, J |
|
2001 |
65 |
1-4 |
p. 503-508 6 p. |
article |
45 |
Modification of electrodes in nanocrystalline dye-sensitized TiO2 solar cells
|
Lee, Sanghyun |
|
2001 |
65 |
1-4 |
p. 193-200 8 p. |
article |
46 |
Monolithic series-interconnection for a thin film silicon solar cell
|
Kerst, U |
|
2001 |
65 |
1-4 |
p. 471-476 6 p. |
article |
47 |
2μm thin film c-Si cells on near-Lambertian Al2O3 substrates
|
Shimokawa, Ryuichi |
|
2001 |
65 |
1-4 |
p. 593-598 6 p. |
article |
48 |
Novel process of grain boundary metallisation on mc Si solar cells
|
Radike, M |
|
2001 |
65 |
1-4 |
p. 303-309 7 p. |
article |
49 |
Numerical simulation of electron-beam-induced current near a silicon grain boundary and impact of a p–n junction space charge region
|
Corkish, Richard |
|
2001 |
65 |
1-4 |
p. 63-69 7 p. |
article |
50 |
Optimization of front metal contact firing scheme to achieve high fill factors on screen printed silicon solar cells
|
Ebong, A |
|
2001 |
65 |
1-4 |
p. 613-619 7 p. |
article |
51 |
Optimized rapid thermal process for high efficiency silicon solar cells
|
Noël, S |
|
2001 |
65 |
1-4 |
p. 495-501 7 p. |
article |
52 |
Overview on SiN surface passivation of crystalline silicon solar cells
|
Aberle, Armin G |
|
2001 |
65 |
1-4 |
p. 239-248 10 p. |
article |
53 |
Performance of 6μm thick crystalline silicon solar cells on glass substrate
|
Kasai, Hiroto |
|
2001 |
65 |
1-4 |
p. 533-539 7 p. |
article |
54 |
Poly-silicon films with low impurity concentration made by hot wire chemical vapour deposition
|
Schropp, R.E.I |
|
2001 |
65 |
1-4 |
p. 541-547 7 p. |
article |
55 |
Porous silicon as an intermediate layer for thin-film solar cell
|
Bilyalov, R |
|
2001 |
65 |
1-4 |
p. 477-485 9 p. |
article |
56 |
Porous SiO2 films prepared by remote plasma-enhanced chemical vapour deposition – a novel antireflection coating technology for photovoltaic modules
|
Nagel, H |
|
2001 |
65 |
1-4 |
p. 71-77 7 p. |
article |
57 |
Preparation of boron-doped ZnO thin films by photo-atomic layer deposition
|
Yamamoto, Y. |
|
2001 |
65 |
1-4 |
p. 125-132 8 p. |
article |
58 |
Production technology of large-area multicrystalline silicon solar cells
|
Fujii, Shuich |
|
2001 |
65 |
1-4 |
p. 269-275 7 p. |
article |
59 |
Progress and outlook for high-efficiency crystalline silicon solar cells
|
Green, M.A |
|
2001 |
65 |
1-4 |
p. 9-16 8 p. |
article |
60 |
Progress in monolithic series connection of wafer-based crystalline silicon solar cells by the novel ‘HighVo’ (High Voltage) cell concept
|
Scheibenstock, S. |
|
2001 |
65 |
1-4 |
p. 179-184 6 p. |
article |
61 |
Progress in thick-film pad printing technique for solar cells
|
Hahne, Peter |
|
2001 |
65 |
1-4 |
p. 399-407 9 p. |
article |
62 |
PVSEC 11
|
Fuyuki, Takashi |
|
2001 |
65 |
1-4 |
p. 1- 1 p. |
article |
63 |
Reduction of defects of polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor
|
Sameshima, T |
|
2001 |
65 |
1-4 |
p. 577-583 7 p. |
article |
64 |
Reduction of plasma-induced damage by electron beam excited plasma CVD
|
Okitsu, K |
|
2001 |
65 |
1-4 |
p. 185-191 7 p. |
article |
65 |
Relationship between thermal treatment conditions and minority carrier lifetimes in p-type, FZ Si wafers
|
Yoshioka, K. |
|
2001 |
65 |
1-4 |
p. 453-458 6 p. |
article |
66 |
Selective emitters in buried contact silicon solar cells: Some low-cost solutions
|
Pirozzi, L |
|
2001 |
65 |
1-4 |
p. 287-295 9 p. |
article |
67 |
Shunts due to laser scribing of solar cells evaluated by highly sensitive lock-in thermography
|
Breitenstein, O. |
|
2001 |
65 |
1-4 |
p. 55-62 8 p. |
article |
68 |
Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell
|
Nishida, Shoji |
|
2001 |
65 |
1-4 |
p. 525-532 8 p. |
article |
69 |
Solar cells based on carbon thin films
|
Krishna, Kalaga M |
|
2001 |
65 |
1-4 |
p. 163-170 8 p. |
article |
70 |
Statistical analysis of local shunts and their relationship with minority-carrier lifetime in multi-crystalline silicon solar cells
|
David, Mulati |
|
2001 |
65 |
1-4 |
p. 445-451 7 p. |
article |
71 |
Study and characterization of semiconductor junctions for photovoltaic applications by contactless methods
|
von Aichberger, S |
|
2001 |
65 |
1-4 |
p. 111-117 7 p. |
article |
72 |
Suppression of light degradation of carrier lifetimes in low-resistivity CZ–Si solar cells
|
Saitoh, T. |
|
2001 |
65 |
1-4 |
p. 277-285 9 p. |
article |
73 |
Suppression of substrate distortion during zone–melting recrystallization process for thin film silicon solar cells
|
Imada, K |
|
2001 |
65 |
1-4 |
p. 423-427 5 p. |
article |
74 |
Surface passivation in high efficiency silicon solar cells
|
Wenham, S.R |
|
2001 |
65 |
1-4 |
p. 377-384 8 p. |
article |
75 |
The case for a 40% efficiency goal for photovoltaic cells in 2005
|
Rannels, James E |
|
2001 |
65 |
1-4 |
p. 3-8 6 p. |
article |
76 |
The influence of the surface on charge carrier transport in GaAs films
|
Sanders, A |
|
2001 |
65 |
1-4 |
p. 119-124 6 p. |
article |
77 |
Thin film solar cells on glass based on the transfer of monocrystalline Si films
|
Bergmann, R.B |
|
2001 |
65 |
1-4 |
p. 355-361 7 p. |
article |
78 |
“Through-the-glass”, double-sided laser crystallisation using copper vapour lasers for the production of thin film silicon material
|
Boreland, Matt |
|
2001 |
65 |
1-4 |
p. 393-398 6 p. |
article |
79 |
Tin-doped indium oxide (ITO) film deposition by ion beam sputtering
|
Han, Younggun |
|
2001 |
65 |
1-4 |
p. 211-218 8 p. |
article |
80 |
Understanding carrier trapping in multicrystalline silicon
|
Macdonald, Daniel |
|
2001 |
65 |
1-4 |
p. 509-516 8 p. |
article |
81 |
Unified model of ballistic and diffusive carrier transport: Application to photovoltaic materials
|
Lipperheide, R |
|
2001 |
65 |
1-4 |
p. 157-162 6 p. |
article |
82 |
UVCVD silicon nitride passivation and ARC layers for multicrystalline solar cells
|
Fourmond, Erwann |
|
2001 |
65 |
1-4 |
p. 297-301 5 p. |
article |
83 |
Zone-defined growth of multicrystalline silicon film from metal-silicon solution
|
Kita, Koji |
|
2001 |
65 |
1-4 |
p. 465-470 6 p. |
article |
84 |
Zone melting recrystallization of silicon films for crystalline silicon thin-film solar cells
|
Reber, S. |
|
2001 |
65 |
1-4 |
p. 409-416 8 p. |
article |