nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Amorphous silicon solar cell on textured tempered glass substrate prepared by sandblast process
|
Taniguchi, H. |
|
1997 |
49 |
1-4 |
p. 101-106 6 p. |
artikel |
2 |
Application of real-time spectroscopic ellipsometry for characterizing the structure and optical properties of microcrystalline component layers of amorphous semiconductor solar cells
|
Koh, Joohyun |
|
1997 |
49 |
1-4 |
p. 135-142 8 p. |
artikel |
3 |
Atomic scale characterization of a-Si : H/a-SiC : H interface structures
|
Miyazaki, S. |
|
1997 |
49 |
1-4 |
p. 45-51 7 p. |
artikel |
4 |
Author index to volume 49
|
|
|
1997 |
49 |
1-4 |
p. 431-439 9 p. |
artikel |
5 |
Changes of infrared absorption by light soaking and thermal quenching in a-Si : H
|
Gotoh, Tamihiro |
|
1997 |
49 |
1-4 |
p. 13-18 6 p. |
artikel |
6 |
Characterization of CuInS2 thin films prepared by sputtering from binary compounds
|
Yamamoto, Y. |
|
1997 |
49 |
1-4 |
p. 399-405 7 p. |
artikel |
7 |
Characterization of high-quality a-SiC : H films prepared by hydrogen-radical CVD method
|
Andoh, N. |
|
1997 |
49 |
1-4 |
p. 89-94 6 p. |
artikel |
8 |
Comparative study of defect states in light-soaked and high-temperature-annealed a-Si:H
|
Kumeda, Minoru |
|
1997 |
49 |
1-4 |
p. 75-80 6 p. |
artikel |
9 |
Controlled nucleation of thin microcrystalline layers for the recombination junction in a-Si stacked cells
|
Pellaton Vaucher, N. |
|
1997 |
49 |
1-4 |
p. 27-33 7 p. |
artikel |
10 |
Control of valence states by a codoping method in CuInS2
|
Yamamoto, Tetsuya |
|
1997 |
49 |
1-4 |
p. 391-397 7 p. |
artikel |
11 |
CuInS2 thin-films solar cells fabricated by sulfurization of oxide precursors
|
Negami, Takayuki |
|
1997 |
49 |
1-4 |
p. 343-348 6 p. |
artikel |
12 |
Deposition of microcrystalline silicon by electron beam excited plasma
|
Sasaki, Toshiaki |
|
1997 |
49 |
1-4 |
p. 81-88 8 p. |
artikel |
13 |
Determination of charge carrier collecting regions in chalcopyrite heterojunction solar cells by electron-beam-induced current measurements
|
Scheer, R. |
|
1997 |
49 |
1-4 |
p. 299-309 11 p. |
artikel |
14 |
Development of high-efficiency a-Si solar cell submodule with a size of 30 cm × 40 cm
|
Wakisaka, Kenichiro |
|
1997 |
49 |
1-4 |
p. 121-125 5 p. |
artikel |
15 |
Development of tempered-glass substrates with TCO films for a-Si solar cells
|
Fukawa, Makoto |
|
1997 |
49 |
1-4 |
p. 107-112 6 p. |
artikel |
16 |
Editorial Board
|
|
|
1997 |
49 |
1-4 |
p. ii- 1 p. |
artikel |
17 |
Effective conversion efficiency enhancement of amorphous silicon modules by operation temperature elevation
|
Kondo, M. |
|
1997 |
49 |
1-4 |
p. 1-6 6 p. |
artikel |
18 |
Effects of annealing on CuInSe2 films grown by molecular beam epitaxy
|
Niki, S. |
|
1997 |
49 |
1-4 |
p. 319-326 8 p. |
artikel |
19 |
Effects of post-deposition treatment on the PL spectra and the hydrogen content of CuInS2 absorber layers
|
Töpper, K. |
|
1997 |
49 |
1-4 |
p. 383-390 8 p. |
artikel |
20 |
Electrical properties of Cl incorporated hydrogenated amorphous silicon
|
Lee, Kyung Ha |
|
1997 |
49 |
1-4 |
p. 61-67 7 p. |
artikel |
21 |
Electrical properties of coevaporated CuInS2 thin films
|
Scheer, R. |
|
1997 |
49 |
1-4 |
p. 423-430 8 p. |
artikel |
22 |
Epitaxial n-Si p-CuInS 2 heterojunction devices
|
Metzner, H. |
|
1997 |
49 |
1-4 |
p. 337-342 6 p. |
artikel |
23 |
Examination of blocking current-voltage behaviour through defect chalcopyrite layer in ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell
|
Topič, M. |
|
1997 |
49 |
1-4 |
p. 311-317 7 p. |
artikel |
24 |
Experimental model and long-term prediction of photovoltaic conversion efficiency of a-Si solar cells
|
Takahisa, Kiyoshi |
|
1997 |
49 |
1-4 |
p. 179-186 8 p. |
artikel |
25 |
Fabrication of amorphous silicon p-i-n solar cells using ion shower doping technique
|
Moon, Byeong Yeon |
|
1997 |
49 |
1-4 |
p. 113-119 7 p. |
artikel |
26 |
Fabrication of graded band-gap Cu(InGa)Se2 thin-film mini-modules with a Zn(O,S,OH) x buffer layer
|
Kushiya, Katsumi |
|
1997 |
49 |
1-4 |
p. 277-283 7 p. |
artikel |
27 |
Growth of boron-doped ZnO thin films by atomic layer deposition
|
Sang, Baosheng |
|
1997 |
49 |
1-4 |
p. 19-26 8 p. |
artikel |
28 |
Growth of CuInS2 films by rf ion plating and their characterization
|
Kondo, Ken-ichi |
|
1997 |
49 |
1-4 |
p. 327-335 9 p. |
artikel |
29 |
15.1% Highly efficient thin film CdS CdTe solar cell
|
Kumazawa, S. |
|
1997 |
49 |
1-4 |
p. 205-212 8 p. |
artikel |
30 |
Improved compositional flexibility of Cu(In,Ga)Se2-based thin film solar cells by sodium control technique
|
Nakada, Tokio |
|
1997 |
49 |
1-4 |
p. 261-267 7 p. |
artikel |
31 |
Improved Cu(In,Ga)(S,Se)2 thin film solar cells by surface sulfurization
|
Nakada, Tokio |
|
1997 |
49 |
1-4 |
p. 285-290 6 p. |
artikel |
32 |
Improved junction formation procedure for low temperature deposited CdS CdTe solar cells
|
Takamoto, T. |
|
1997 |
49 |
1-4 |
p. 219-225 7 p. |
artikel |
33 |
Improved performance of Cu(InGa)Se2 thin-film solar cells using evaporated Cd-free buffer layers
|
Ohtake, Yasutoshi |
|
1997 |
49 |
1-4 |
p. 269-275 7 p. |
artikel |
34 |
Interfacial mixed-crystal layer in CdS CdTe heterostructure elucidated by electroreflectance spectroscopy
|
Toyama, T. |
|
1997 |
49 |
1-4 |
p. 213-218 6 p. |
artikel |
35 |
Issues on the chalcopyrite/defect-chalcopyrite junction model for high-efficiency Cu(In,Ga)Se2 solar cells
|
Contreras, Miguel A. |
|
1997 |
49 |
1-4 |
p. 239-247 9 p. |
artikel |
36 |
Large area ZnO films optimized for graded band-gap Cu(InGa)Se2-based thin-film mini-modules
|
Cooray, Nawalage F. |
|
1997 |
49 |
1-4 |
p. 291-297 7 p. |
artikel |
37 |
Light-induced changes in hydrogen-diluted a-Si : H materials and solar cells: A new perspective on self-consistent analysis
|
Lee, Y. |
|
1997 |
49 |
1-4 |
p. 149-156 8 p. |
artikel |
38 |
Low-cost amorphous silicon photovoltaic module encapsulated with liquid resin
|
Kondo, M. |
|
1997 |
49 |
1-4 |
p. 127-133 7 p. |
artikel |
39 |
Microcrystalline silicon films and tandem solar cells prepared by triode PECVD
|
Liao, Xianbo |
|
1997 |
49 |
1-4 |
p. 171-177 7 p. |
artikel |
40 |
Microstructural characterization of high-efficiency Cu(In,Ga)Se2 solar cells
|
Wada, Takahiro |
|
1997 |
49 |
1-4 |
p. 249-260 12 p. |
artikel |
41 |
More insights from CPM and PDS: Charged and neutral defects in a-Si:H
|
Siebke, Frank |
|
1997 |
49 |
1-4 |
p. 7-12 6 p. |
artikel |
42 |
Novel light-trapping schemes involving planar junctions and diffuse rear reflectors for thin-film silicon-based solar cells
|
Winz, K. |
|
1997 |
49 |
1-4 |
p. 195-203 9 p. |
artikel |
43 |
Optical confinement in high-efficiency a-Si solar cells with textured surfaces
|
Hishikawa, Yoshihiro |
|
1997 |
49 |
1-4 |
p. 143-148 6 p. |
artikel |
44 |
Optimal optical design of thin-film photovoltaic devices
|
Zhu, Furong |
|
1997 |
49 |
1-4 |
p. 163-169 7 p. |
artikel |
45 |
Over 10% efficient CuInS2 solar cell by sulfurization
|
Nakabayashi, T. |
|
1997 |
49 |
1-4 |
p. 375-381 7 p. |
artikel |
46 |
Photo atomic layer deposition of transparent conductive ZnO films
|
Saito, Koki |
|
1997 |
49 |
1-4 |
p. 187-193 7 p. |
artikel |
47 |
Photovoltaic characteristics of CuInS 2 CdS solar cell by electron beam evaporation
|
Park, Gye-Choon |
|
1997 |
49 |
1-4 |
p. 365-374 10 p. |
artikel |
48 |
Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of EB evaporated precursors
|
Katagiri, Hironori |
|
1997 |
49 |
1-4 |
p. 407-414 8 p. |
artikel |
49 |
Preparation of CuInS2 films with sufficient sulfur content and excellent morphology by one-step electrodeposition
|
Nakamura, Sigeyuki |
|
1997 |
49 |
1-4 |
p. 415-421 7 p. |
artikel |
50 |
Preparation of (n) a-Si: H/(p) c-Si heterojunction solar cells
|
Borchert, D. |
|
1997 |
49 |
1-4 |
p. 53-59 7 p. |
artikel |
51 |
Preparation of very stable and low hydrogen content amorphous silicon films by hydrogen-radical CVD method
|
Tsuyuki, T. |
|
1997 |
49 |
1-4 |
p. 95-100 6 p. |
artikel |
52 |
Properties of CuInS2 thin films grown by a two-step process without H2S
|
Klenk, R. |
|
1997 |
49 |
1-4 |
p. 349-356 8 p. |
artikel |
53 |
Prospects of wide-gap chalcopyrites for thin film photovoltaic modules
|
Herberholz, R. |
|
1997 |
49 |
1-4 |
p. 227-237 11 p. |
artikel |
54 |
Selected back issues
|
|
|
1997 |
49 |
1-4 |
p. 443-444 2 p. |
artikel |
55 |
Spectral characteristics of a-Si:H c-Si heterostructures
|
Gall, S. |
|
1997 |
49 |
1-4 |
p. 157-162 6 p. |
artikel |
56 |
Subject index to volume 49
|
|
|
1997 |
49 |
1-4 |
p. 441-442 2 p. |
artikel |
57 |
The influence of sodium on the properties of CuInS2 thin films and solar cells
|
Watanabe, Takayuki |
|
1997 |
49 |
1-4 |
p. 357-363 7 p. |
artikel |
58 |
Thermal equilibration and photocreation of neutral dangling bonds in a-Si: H caused by floating bonds
|
Shimizu, Tatsuo |
|
1997 |
49 |
1-4 |
p. 69-74 6 p. |
artikel |
59 |
Towards high-efficiency thin-film silicon solar cells with the “micromorph” concept
|
Meier, J. |
|
1997 |
49 |
1-4 |
p. 35-44 10 p. |
artikel |