| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Dislocation-limited performance of advanced solar cells determined by TCAD modeling
|
Berney Needleman, David
|
|
2016
|
158 |
P1 |
p. 29-36
8 p.
|
article
|
| 2 |
Editorial Board
|
|
|
2016
|
158 |
P1 |
p. IFC-
1 p.
|
article
|
| 3 |
Editorial to the Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)
|
Cuevas, A.
|
|
2016
|
158 |
P1 |
p. 1-
1 p.
|
article
|
| 4 |
21.0%-efficient screen-printed n-PERT back-junction silicon solar cell with plasma-deposited boron diffusion source
|
Wehmeier, Nadine
|
|
2016
|
158 |
P1 |
p. 50-54
5 p.
|
article
|
| 5 |
Extending the limits of screen-printed metallization of phosphorus- and boron-doped surfaces
|
Werner, Sabrina
|
|
2016
|
158 |
P1 |
p. 37-42
6 p.
|
article
|
| 6 |
IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts
|
Yang, Guangtao
|
|
2016
|
158 |
P1 |
p. 84-90
7 p.
|
article
|
| 7 |
Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
|
Walter, Dominic C.
|
|
2016
|
158 |
P1 |
p. 91-97
7 p.
|
article
|
| 8 |
Intra-grain versus grain boundary degradation due to illumination and annealing behavior of multi-crystalline solar cells
|
Luka, Tabea
|
|
2016
|
158 |
P1 |
p. 43-49
7 p.
|
article
|
| 9 |
ITO/SiOx:H stacks for silicon heterojunction solar cells
|
Herasimenka, Stanislau Y
|
|
2016
|
158 |
P1 |
p. 98-101
4 p.
|
article
|
| 10 |
Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells
|
Young, David L.
|
|
2016
|
158 |
P1 |
p. 68-76
9 p.
|
article
|
| 11 |
n-Type polysilicon passivating contact for industrial bifacial n-type solar cells
|
Stodolny, M.K.
|
|
2016
|
158 |
P1 |
p. 24-28
5 p.
|
article
|
| 12 |
On the benefits of counting single photoluminescence photons for the investigation of low injection lifetime and traps in silicon
|
Heinz, Friedemann D.
|
|
2016
|
158 |
P1 |
p. 107-114
8 p.
|
article
|
| 13 |
Oxygen vacancies in tungsten oxide and their influence on tungsten oxide/silicon heterojunction solar cells
|
Mews, Mathias
|
|
2016
|
158 |
P1 |
p. 77-83
7 p.
|
article
|
| 14 |
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells
|
Stuckelberger, Josua
|
|
2016
|
158 |
P1 |
p. 2-10
9 p.
|
article
|
| 15 |
Rapid passivation of carrier-induced defects in p-type multi-crystalline silicon
|
Payne, David N.R.
|
|
2016
|
158 |
P1 |
p. 102-106
5 p.
|
article
|
| 16 |
Simplified cleaning for 22.5% nPERT solar cells with rear epitaxial emitters
|
Kuzma-Filipek, I.
|
|
2016
|
158 |
P1 |
p. 19-23
5 p.
|
article
|
| 17 |
Thermal History Index as a bulk quality indicator for Czochralski solar wafers
|
Veirman, J.
|
|
2016
|
158 |
P1 |
p. 55-59
5 p.
|
article
|
| 18 |
Titanium oxide: A re-emerging optical and passivating material for silicon solar cells
|
Cui, Jie
|
|
2016
|
158 |
P1 |
p. 115-121
7 p.
|
article
|
| 19 |
Void formation in screen-printed local aluminum contacts modeled by surface energy minimization
|
Kranz, Christopher
|
|
2016
|
158 |
P1 |
p. 11-18
8 p.
|
article
|
| 20 |
Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?
|
Peibst, R.
|
|
2016
|
158 |
P1 |
p. 60-67
8 p.
|
article
|
Journal description