nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Aging behaviour of laser welded Al-interconnections in crystalline silicon modules
|
Schulte-Huxel, Henning |
|
2012 |
106 |
C |
p. 22-26 5 p. |
artikel |
2 |
Calendar
|
|
|
2012 |
106 |
C |
p. 95-96 2 p. |
artikel |
3 |
Development of lead-free silver ink for front contact metallization
|
Kalio, Andre |
|
2012 |
106 |
C |
p. 51-54 4 p. |
artikel |
4 |
Dynamic photoluminescence lifetime imaging of multicrystalline silicon bricks
|
Herlufsen, Sandra |
|
2012 |
106 |
C |
p. 42-46 5 p. |
artikel |
5 |
Editorial Board
|
|
|
2012 |
106 |
C |
p. IFC- 1 p. |
artikel |
6 |
Impact of screen printing silver paste components on the space charge region recombination losses of industrial silicon solar cells
|
Hoenig, R. |
|
2012 |
106 |
C |
p. 7-10 4 p. |
artikel |
7 |
Improved QSS-μPCD measurement with quality of decay control: Correlation with steady-state carrier lifetime
|
Wilson, Marshall |
|
2012 |
106 |
C |
p. 66-70 5 p. |
artikel |
8 |
Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells
|
Bivour, Martin |
|
2012 |
106 |
C |
p. 11-16 6 p. |
artikel |
9 |
Industrial PERL-type solar cells exceeding 19% with screen-printed contacts and homogeneous emitter
|
Moors, Matthieu |
|
2012 |
106 |
C |
p. 84-88 5 p. |
artikel |
10 |
Interface properties of a-SiN x :H/Si to improve surface passivation
|
Lamers, Machteld W.P.E. |
|
2012 |
106 |
C |
p. 17-21 5 p. |
artikel |
11 |
Loss analysis and efficiency potential of p-type MWT–PERC solar cells
|
Thaidigsmann, Benjamin |
|
2012 |
106 |
C |
p. 89-94 6 p. |
artikel |
12 |
Modeling majority carrier mobility in compensated crystalline silicon for solar cells
|
Schindler, Florian |
|
2012 |
106 |
C |
p. 31-36 6 p. |
artikel |
13 |
Photoluminescence imaging under applied bias for characterization of Si surface passivation layers
|
Haug, Halvard |
|
2012 |
106 |
C |
p. 60-65 6 p. |
artikel |
14 |
Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2012)
|
Poortmans, Jef |
|
2012 |
106 |
C |
p. 1- 1 p. |
artikel |
15 |
p-type c-Si solar cells based on rear side laser processing of Al2O3/SiC x stacks
|
Ortega, Pablo |
|
2012 |
106 |
C |
p. 80-83 4 p. |
artikel |
16 |
Rating and sorting of mc-Si as-cut wafers in solar cell production using PL imaging
|
Haunschild, Jonas |
|
2012 |
106 |
C |
p. 71-75 5 p. |
artikel |
17 |
Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach
|
Müller, Jens |
|
2012 |
106 |
C |
p. 76-79 4 p. |
artikel |
18 |
Self-aligned local contacts through a-Si:H passivation layer
|
Carstens, Kai |
|
2012 |
106 |
C |
p. 27-30 4 p. |
artikel |
19 |
Silicon heterojunction solar cells: Influence of H2-dilution on cell performance
|
Gogolin, R. |
|
2012 |
106 |
C |
p. 47-50 4 p. |
artikel |
20 |
SiliconPV 2012 generation of defect-related acceptor states by laser doping
|
Safiei, Ali |
|
2012 |
106 |
C |
p. 2-6 5 p. |
artikel |
21 |
Simple power-loss analysis method for high-efficiency Interdigitated Back Contact (IBC) silicon solar cells
|
Verlinden, Pierre J. |
|
2012 |
106 |
C |
p. 37-41 5 p. |
artikel |
22 |
Time-resolved photoluminescence imaging with electronic shuttering using an image intensifier unit
|
Kiliani, David |
|
2012 |
106 |
C |
p. 55-59 5 p. |
artikel |