no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A comparison of mode I fracture behavior of fcc and bcc metallic materials: a discrete dislocation analysis
|
Columbus, D. |
|
2001 |
180 |
1-2 |
p. 138-161 24 p. |
article |
2 |
Adsorption of small molecules on the Pt(100) single crystal surface studied by Disappearance Potential Spectroscopy
|
Cholach, A.R |
|
2001 |
180 |
1-2 |
p. 173-183 11 p. |
article |
3 |
Corrigendum to “Electroreflectance study of macroporous silicon surfaces”
|
Holiney, R.Yu. |
|
2001 |
180 |
1-2 |
p. 184- 1 p. |
article |
4 |
Dependence of stresses on grain orientations in thin polycrystalline films on substrates: an explanation of the relationship between preferred orientations and stresses
|
Zhang, Jian-min |
|
2001 |
180 |
1-2 |
p. 1-5 5 p. |
article |
5 |
Determination of Auger sensitivity factors for Al-rich quasicrystals
|
Jenks, C.J. |
|
2001 |
180 |
1-2 |
p. 57-64 8 p. |
article |
6 |
Effect of oxygen radical and oxygen ion irradiation on biaxially stretched poly(ethylene terephthalate) surface studied by sum-frequency generation
|
Miyamae, Takayuki |
|
2001 |
180 |
1-2 |
p. 126-137 12 p. |
article |
7 |
In situ Raman spectroscopic investigation of chromium surfaces under hydrothermal conditions
|
Maslar, J.E |
|
2001 |
180 |
1-2 |
p. 102-118 17 p. |
article |
8 |
Laser-induced surface drilling of silicon carbide
|
Sciti, D |
|
2001 |
180 |
1-2 |
p. 92-101 10 p. |
article |
9 |
Microstructural and electrical properties of MgO thin films grown on p-InP (100) substrates at low temperature
|
Kim, T.W. |
|
2001 |
180 |
1-2 |
p. 162-167 6 p. |
article |
10 |
Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1−x C x :H films
|
Wang, Yan |
|
2001 |
180 |
1-2 |
p. 87-91 5 p. |
article |
11 |
Nanoindentation studies of (111) GaAs/InP epilayers
|
Navamathavan, R. |
|
2001 |
180 |
1-2 |
p. 119-125 7 p. |
article |
12 |
Oxygen partial pressure dependence of suppressing oxidation-induced stacking fault generation in argon ambient annealing including oxygen and HCl
|
Suzuki, Toshiharu |
|
2001 |
180 |
1-2 |
p. 168-172 5 p. |
article |
13 |
Polythiophene — O3 surface reactions studied by XPS
|
Heeg, Jan |
|
2001 |
180 |
1-2 |
p. 36-41 6 p. |
article |
14 |
Properties of copper-doped ZnTe thin films by immersion in Cu solution
|
Aqili , Akram K.S. |
|
2001 |
180 |
1-2 |
p. 73-80 8 p. |
article |
15 |
Strain in coherent cobalt silicide islands formed by reactive epitaxy
|
Bennett, P.A. |
|
2001 |
180 |
1-2 |
p. 65-72 8 p. |
article |
16 |
The influence of chemical treatments on tungsten films found in integrated circuits
|
Perry, Scott S. |
|
2001 |
180 |
1-2 |
p. 6-13 8 p. |
article |
17 |
The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates
|
Kang, T.W. |
|
2001 |
180 |
1-2 |
p. 81-86 6 p. |
article |
18 |
The role of impurities in bubble formation during directed light processing of tantalum
|
Taylor, T.N |
|
2001 |
180 |
1-2 |
p. 14-26 13 p. |
article |
19 |
The water formation rate on platinum and palladium as a function of the surface hydrogen pressure from three-dimensional hydrogen pressure distributions
|
Johansson, M. |
|
2001 |
180 |
1-2 |
p. 27-35 9 p. |
article |
20 |
Ultra-short pulsed laser ablation of polymers
|
Serafetinides, A.A. |
|
2001 |
180 |
1-2 |
p. 42-56 15 p. |
article |