| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate electron mobility extraction in nMOSFETs by RF split CV
|
Hyvert, G.
|
|
2009
|
|
7-9 |
p. 1665-1667
3 p.
|
artikel
|
| 2 |
A first-principles study of the structural and electronic properties of III–V/thermal oxide interfaces
|
Scarrozza, M.
|
|
2009
|
|
7-9 |
p. 1747-1750
4 p.
|
artikel
|
| 3 |
Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
|
Lopes, J.M.J.
|
|
2009
|
|
7-9 |
p. 1646-1649
4 p.
|
artikel
|
| 4 |
Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications
|
Yoon, Jaesik
|
|
2009
|
|
7-9 |
p. 1929-1932
4 p.
|
artikel
|
| 5 |
A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices
|
Longo, P.
|
|
2009
|
|
7-9 |
p. 1568-1570
3 p.
|
artikel
|
| 6 |
A novel SONOS-type flash device with stacked charge trapping layer
|
Ye, Zong-Hao
|
|
2009
|
|
7-9 |
p. 1863-1865
3 p.
|
artikel
|
| 7 |
Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics
|
Gundogdu, K.
|
|
2009
|
|
7-9 |
p. 1654-1657
4 p.
|
artikel
|
| 8 |
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
|
Li, C.X.
|
|
2009
|
|
7-9 |
p. 1596-1598
3 p.
|
artikel
|
| 9 |
Atomic layer deposition of Ge2Sb2Te5 thin films
|
Ritala, Mikko
|
|
2009
|
|
7-9 |
p. 1946-1949
4 p.
|
artikel
|
| 10 |
Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers
|
Lin, L.
|
|
2009
|
|
7-9 |
p. 1743-1746
4 p.
|
artikel
|
| 11 |
Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4
|
Nakasaki, Yasushi
|
|
2009
|
|
7-9 |
p. 1901-1904
4 p.
|
artikel
|
| 12 |
Atomistic model structure of the Ge(100)–GeO2 interface
|
Broqvist, Peter
|
|
2009
|
|
7-9 |
p. 1589-1591
3 p.
|
artikel
|
| 13 |
Atomistic origin of high-quality “novel SiON gate dielectrics”
|
Yamaguchi, Keita
|
|
2009
|
|
7-9 |
p. 1680-1682
3 p.
|
artikel
|
| 14 |
Author Index
|
|
|
2009
|
|
7-9 |
p. I-XIV
nvt p.
|
artikel
|
| 15 |
Band offsets at interfaces of (100)In x Ga1− x As (0⩽ x ⩽0.53) with Al2O3 and HfO2
|
Afanas’ev, V.V.
|
|
2009
|
|
7-9 |
p. 1550-1553
4 p.
|
artikel
|
| 16 |
Challenges of integration of high-κ dielectric with III–V materials (Invited Paper)
|
Tsai, W.
|
|
2009
|
|
7-9 |
p. 1540-1543
4 p.
|
artikel
|
| 17 |
Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks
|
Amat, E.
|
|
2009
|
|
7-9 |
p. 1908-1910
3 p.
|
artikel
|
| 18 |
Characterization of interfacial reaction and chemical bonding features of LaO x /HfO2 stack structure formed on thermally-grown SiO2/Si(100)
|
Ohta, Akio
|
|
2009
|
|
7-9 |
p. 1650-1653
4 p.
|
artikel
|
| 19 |
Characterization of TiO x N y nanoparticles embedded in HfO x N y as charge trapping nodes for nonvolatile memory device applications
|
Liu, Chien-Wei
|
|
2009
|
|
7-9 |
p. 1692-1695
4 p.
|
artikel
|
| 20 |
Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation
|
Liu, Li-Jung
|
|
2009
|
|
7-9 |
p. 1852-1855
4 p.
|
artikel
|
| 21 |
Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
|
Yanev, V.
|
|
2009
|
|
7-9 |
p. 1911-1914
4 p.
|
artikel
|
| 22 |
Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors
|
Dueñas, Salvador
|
|
2009
|
|
7-9 |
p. 1689-1691
3 p.
|
artikel
|
| 23 |
Compositional dependence of work function and Fermi level position of the HfN x /SiO2 system
|
Rothschild, J.A.
|
|
2009
|
|
7-9 |
p. 1771-1773
3 p.
|
artikel
|
| 24 |
Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers
|
Manger, D.
|
|
2009
|
|
7-9 |
p. 1815-1817
3 p.
|
artikel
|
| 25 |
Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices
|
Lanza, M.
|
|
2009
|
|
7-9 |
p. 1921-1924
4 p.
|
artikel
|
| 26 |
Cycling degradation in TANOS stack
|
Ghidini, G.
|
|
2009
|
|
7-9 |
p. 1822-1825
4 p.
|
artikel
|
| 27 |
Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injection
|
Chang, Man
|
|
2009
|
|
7-9 |
p. 1804-1806
3 p.
|
artikel
|
| 28 |
Defects and instabilities in Hf-dielectric/SiON stacks (Invited Paper)
|
Zhang, J.F.
|
|
2009
|
|
7-9 |
p. 1883-1887
5 p.
|
artikel
|
| 29 |
Degradation dynamics and breakdown of MgO gate oxides
|
Miranda, E.
|
|
2009
|
|
7-9 |
p. 1715-1717
3 p.
|
artikel
|
| 30 |
Deposition of HfO2 on InAs by atomic-layer deposition
|
Wheeler, D.
|
|
2009
|
|
7-9 |
p. 1561-1563
3 p.
|
artikel
|
| 31 |
Editorial Board
|
|
|
2009
|
|
7-9 |
p. ii-
1 p.
|
artikel
|
| 32 |
Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS
|
Zenkevich, Andrei
|
|
2009
|
|
7-9 |
p. 1777-1779
3 p.
|
artikel
|
| 33 |
Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(100)
|
Congedo, G.
|
|
2009
|
|
7-9 |
p. 1696-1699
4 p.
|
artikel
|
| 34 |
Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs
|
Ayubi-Moak, J.
|
|
2009
|
|
7-9 |
p. 1564-1567
4 p.
|
artikel
|
| 35 |
Electrical characterization of metal-ferroelectric (Mn-substituted BiFeO3)-insulator (HfO2)-semiconductor capacitors for nonvolatile memory applications
|
Juan, Pi-chun
|
|
2009
|
|
7-9 |
p. 1845-1848
4 p.
|
artikel
|
| 36 |
Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone
|
Lee, B.
|
|
2009
|
|
7-9 |
p. 1658-1661
4 p.
|
artikel
|
| 37 |
Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
|
Lin, Han-Chung
|
|
2009
|
|
7-9 |
p. 1554-1557
4 p.
|
artikel
|
| 38 |
Electroluminescence, charge trapping and quenching in Eu implantes SiO2–Si structures
|
Tyagulskiy, S.
|
|
2009
|
|
7-9 |
p. 1954-1956
3 p.
|
artikel
|
| 39 |
Electronic properties of defects in polycrystalline dielectric materials
|
McKenna, K.P.
|
|
2009
|
|
7-9 |
p. 1751-1755
5 p.
|
artikel
|
| 40 |
Electronic structure of bulk and defect α- and γ-Al2O3
|
Perevalov, T.V.
|
|
2009
|
|
7-9 |
p. 1915-1917
3 p.
|
artikel
|
| 41 |
Electronic structure of memory traps in silicon nitride
|
Gritsenko, V.A.
|
|
2009
|
|
7-9 |
p. 1866-1869
4 p.
|
artikel
|
| 42 |
Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3
|
Xiong, Ka
|
|
2009
|
|
7-9 |
p. 1672-1675
4 p.
|
artikel
|
| 43 |
Estimate of dielectric density using spectroscopic ellipsometry
|
Davey, W.
|
|
2009
|
|
7-9 |
p. 1905-1907
3 p.
|
artikel
|
| 44 |
Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure
|
Cheng, Weitao
|
|
2009
|
|
7-9 |
p. 1786-1788
3 p.
|
artikel
|
| 45 |
Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation
|
Lu, Chun-Chang
|
|
2009
|
|
7-9 |
p. 1703-1706
4 p.
|
artikel
|
| 46 |
Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET
|
Kawanago, T.
|
|
2009
|
|
7-9 |
p. 1629-1631
3 p.
|
artikel
|
| 47 |
First principles study of substoichiometric germanium oxides
|
Binder, Jan Felix
|
|
2009
|
|
7-9 |
p. 1760-1762
3 p.
|
artikel
|
| 48 |
Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)
|
Chin, Albert
|
|
2009
|
|
7-9 |
p. 1728-1732
5 p.
|
artikel
|
| 49 |
Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)
|
Schroeder, T.
|
|
2009
|
|
7-9 |
p. 1615-1620
6 p.
|
artikel
|
| 50 |
Germanium surface and interfaces (Invited Paper)
|
Dimoulas, A.
|
|
2009
|
|
7-9 |
p. 1577-1581
5 p.
|
artikel
|
| 51 |
Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces
|
Casey, P.
|
|
2009
|
|
7-9 |
p. 1711-1714
4 p.
|
artikel
|
| 52 |
Growth temperature dependence of epitaxial Gd2O3 films on Si(111)
|
Niu, G.
|
|
2009
|
|
7-9 |
p. 1700-1702
3 p.
|
artikel
|
| 53 |
Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications
|
Łupina, G.
|
|
2009
|
|
7-9 |
p. 1842-1844
3 p.
|
artikel
|
| 54 |
“Higher-κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research study
|
Green, M.L.
|
|
2009
|
|
7-9 |
p. 1662-1664
3 p.
|
artikel
|
| 55 |
High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies
|
Vallée, C.
|
|
2009
|
|
7-9 |
p. 1774-1776
3 p.
|
artikel
|
| 56 |
High-k dielectrics for future generation memory devices (Invited Paper)
|
Kittl, J.A.
|
|
2009
|
|
7-9 |
p. 1789-1795
7 p.
|
artikel
|
| 57 |
Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1− x )Al x O2 films
|
Weinreich, W.
|
|
2009
|
|
7-9 |
p. 1826-1829
4 p.
|
artikel
|
| 58 |
Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells
|
Zheng, X.F.
|
|
2009
|
|
7-9 |
p. 1834-1837
4 p.
|
artikel
|
| 59 |
Improved GeOI substrates for pMOSFET off-state leakage control
|
Romanjek, K.
|
|
2009
|
|
7-9 |
p. 1585-1588
4 p.
|
artikel
|
| 60 |
Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition
|
Müller, J.
|
|
2009
|
|
7-9 |
p. 1818-1821
4 p.
|
artikel
|
| 61 |
Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs
|
Kaczer, B.
|
|
2009
|
|
7-9 |
p. 1582-1584
3 p.
|
artikel
|
| 62 |
Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning
|
Li, X.V.
|
|
2009
|
|
7-9 |
p. 1599-1602
4 p.
|
artikel
|
| 63 |
Inside Front Cover - Editorial Board
|
|
|
2009
|
|
7-9 |
p. IFC-
1 p.
|
artikel
|
| 64 |
Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETs
|
Schmidt, M.
|
|
2009
|
|
7-9 |
p. 1683-1685
3 p.
|
artikel
|
| 65 |
Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopy
|
Beyer, R.
|
|
2009
|
|
7-9 |
p. 1859-1862
4 p.
|
artikel
|
| 66 |
Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)
|
Caymax, Matty
|
|
2009
|
|
7-9 |
p. 1529-1535
7 p.
|
artikel
|
| 67 |
Interface states model for III–V oxide interfaces
|
Robertson, J.
|
|
2009
|
|
7-9 |
p. 1558-1560
3 p.
|
artikel
|
| 68 |
Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)
|
McIntyre, Paul C.
|
|
2009
|
|
7-9 |
p. 1536-1539
4 p.
|
artikel
|
| 69 |
Interfacial layer optimization of high-k/metal gate stacks for low temperature processing
|
Linder, Barry P.
|
|
2009
|
|
7-9 |
p. 1632-1634
3 p.
|
artikel
|
| 70 |
Investigation of oxidation-induced strain in a top-down Si nanowire platform
|
Najmzadeh, M.
|
|
2009
|
|
7-9 |
p. 1961-1964
4 p.
|
artikel
|
| 71 |
Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices
|
Andersson, C.
|
|
2009
|
|
7-9 |
p. 1635-1637
3 p.
|
artikel
|
| 72 |
Lanthanum implantation for threshold voltage control in metal/high-k devices
|
Fet, A.
|
|
2009
|
|
7-9 |
p. 1782-1785
4 p.
|
artikel
|
| 73 |
Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)
|
Matsumoto, T.
|
|
2009
|
|
7-9 |
p. 1939-1941
3 p.
|
artikel
|
| 74 |
Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack
|
Samanta, Piyas
|
|
2009
|
|
7-9 |
p. 1767-1770
4 p.
|
artikel
|
| 75 |
Modeling complexity of a complex gate oxide
|
Demkov, Alexander A.
|
|
2009
|
|
7-9 |
p. 1763-1766
4 p.
|
artikel
|
| 76 |
Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface
|
Pelloquin, S.
|
|
2009
|
|
7-9 |
p. 1686-1688
3 p.
|
artikel
|
| 77 |
Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS
|
Merckling, C.
|
|
2009
|
|
7-9 |
p. 1592-1595
4 p.
|
artikel
|
| 78 |
Net negative charge in low-temperature SiO2 gate dielectric layers
|
Boogaard, A.
|
|
2009
|
|
7-9 |
p. 1707-1710
4 p.
|
artikel
|
| 79 |
Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)
|
Toriumi, Akira
|
|
2009
|
|
7-9 |
p. 1571-1576
6 p.
|
artikel
|
| 80 |
Oxygen vacancy levels and interfaces of Al2O3
|
Liu, D.
|
|
2009
|
|
7-9 |
p. 1668-1671
4 p.
|
artikel
|
| 81 |
Paramagnetic Ge dangling bond type defects at (100)Si1− x Ge x /SiO2 interfaces (Invited Paper)
|
Stesmans, A.
|
|
2009
|
|
7-9 |
p. 1621-1625
5 p.
|
artikel
|
| 82 |
Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)
|
Garros, X.
|
|
2009
|
|
7-9 |
p. 1609-1614
6 p.
|
artikel
|
| 83 |
Phase change and electrical characteristics of Ge–Se–Te alloys
|
Lee, Eui-Bok
|
|
2009
|
|
7-9 |
p. 1950-1953
4 p.
|
artikel
|
| 84 |
Piezoresistive coefficients of ‹110› silicon-on-insulator MOSFETs with 0.135/0.45/10 micrometers channel length with external forces
|
Chang, W.T.
|
|
2009
|
|
7-9 |
p. 1965-1968
4 p.
|
artikel
|
| 85 |
Point defects in Al2O3 and their impact on gate stacks
|
Weber, J.R.
|
|
2009
|
|
7-9 |
p. 1756-1759
4 p.
|
artikel
|
| 86 |
Post metallization annealing study in La2O3/Ge MOS structure
|
Song, J.
|
|
2009
|
|
7-9 |
p. 1638-1641
4 p.
|
artikel
|
| 87 |
Preface
|
Robertson, John
|
|
2009
|
|
7-9 |
p. 1519-
1 p.
|
artikel
|
| 88 |
Program efficiency and high temperature retention of SiN/high-K based memories
|
Vianello, E.
|
|
2009
|
|
7-9 |
p. 1830-1833
4 p.
|
artikel
|
| 89 |
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
|
Choi, Changhwan
|
|
2009
|
|
7-9 |
p. 1737-1739
3 p.
|
artikel
|
| 90 |
Recovery study of negative bias temperature instability
|
Wang, Miaomiao
|
|
2009
|
|
7-9 |
p. 1888-1890
3 p.
|
artikel
|
| 91 |
Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)
|
Ielmini, Daniele
|
|
2009
|
|
7-9 |
p. 1870-1875
6 p.
|
artikel
|
| 92 |
Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)
|
Molas, G.
|
|
2009
|
|
7-9 |
p. 1796-1803
8 p.
|
artikel
|
| 93 |
Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO2 impurity host layer for nonvolatile memory application
|
Jung, Seungjae
|
|
2009
|
|
7-9 |
p. 1812-1814
3 p.
|
artikel
|
| 94 |
Resistive non-volatile memory devices (Invited Paper)
|
Waser, Rainer
|
|
2009
|
|
7-9 |
p. 1925-1928
4 p.
|
artikel
|
| 95 |
Roadmap for 22nm and beyond (Invited Paper)
|
Iwai, H.
|
|
2009
|
|
7-9 |
p. 1520-1528
9 p.
|
artikel
|
| 96 |
Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
|
Gottlob, H.D.B.
|
|
2009
|
|
7-9 |
p. 1642-1645
4 p.
|
artikel
|
| 97 |
Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)
|
Frank, Martin M.
|
|
2009
|
|
7-9 |
p. 1603-1608
6 p.
|
artikel
|
| 98 |
Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals
|
Kaczer, B.
|
|
2009
|
|
7-9 |
p. 1894-1896
3 p.
|
artikel
|
| 99 |
Silicon nanowire NVM with high-k gate dielectric stack
|
Zhu, Xiaoxiao
|
|
2009
|
|
7-9 |
p. 1957-1960
4 p.
|
artikel
|
| 100 |
Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy
|
Lucovsky, G.
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2009
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7-9 |
p. 1676-1679
4 p.
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artikel
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| 101 |
Sr excess accommodation in ALD grown SrTiO3 and its impact on the dielectric response
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Clima, S.
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2009
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7-9 |
p. 1936-1938
3 p.
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artikel
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| 102 |
Stability and Schottky barrier of silicides: First-principles study
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Nakayama, T.
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2009
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7-9 |
p. 1718-1721
4 p.
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artikel
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| 103 |
Stability of Si impurity in high-κ oxides
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Umezawa, Naoto
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2009
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7-9 |
p. 1780-1781
2 p.
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artikel
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| 104 |
Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium
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Tsoutsou, D.
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2009
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7-9 |
p. 1626-1628
3 p.
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artikel
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| 105 |
Strain sensitivity of gate leakage in strained-SOI nMOSFETs: A benefit for the performance trade-off and a novel way to extract the strain-induced band offset
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Rochette, F.
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2009
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7-9 |
p. 1897-1900
4 p.
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artikel
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| 106 |
Surface passivation and implications on high mobility channel performance (Invited Paper)
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Hinkle, C.L.
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2009
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7-9 |
p. 1544-1549
6 p.
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artikel
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| 107 |
Table of Contents
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2009
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7-9 |
p. v-xi
nvt p.
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artikel
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| 108 |
The evolution of optical and electrical properties of low-k dielectrics under bias stress
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Atkin, J.M.
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2009
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7-9 |
p. 1891-1893
3 p.
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artikel
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| 109 |
The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications
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Lee, Joonmyoung
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2009
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7-9 |
p. 1933-1935
3 p.
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artikel
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| 110 |
Theoretical models for work function control (Invited Paper)
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Shiraishi, Kenji
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2009
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7-9 |
p. 1733-1736
4 p.
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artikel
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| 111 |
Theoretical studies on the charge trap mechanism of MONOS type memories – Relationship between atomistic information and program/erase actions
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Otake, Akira
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2009
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7-9 |
p. 1849-1851
3 p.
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artikel
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| 112 |
The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)
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Tseng, Hsing-Huang
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2009
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7-9 |
p. 1722-1727
6 p.
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artikel
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| 113 |
Three-dimensional modeling of the tunneling potential in MOS memories embedded with metal nanoparticles
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Beniakar, M.
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2009
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7-9 |
p. 1856-1858
3 p.
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artikel
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| 114 |
Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacks
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Charbonnier, M.
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2009
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7-9 |
p. 1740-1742
3 p.
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artikel
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| 115 |
Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications
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Dimitrakis, P.
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2009
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7-9 |
p. 1838-1841
4 p.
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artikel
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| 116 |
Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)
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Grasser, T.
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2009
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7-9 |
p. 1876-1882
7 p.
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artikel
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| 117 |
Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory
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Govoreanu, B.
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2009
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7-9 |
p. 1807-1811
5 p.
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artikel
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| 118 |
Unified mechanisms for structural relaxation and crystallization in phase-change memory devices
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Ielmini, D.
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2009
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7-9 |
p. 1942-1945
4 p.
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artikel
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| 119 |
Wide band (0.05–40GHz) characterization and signal propagation in Cu–porous MSQ interconnects
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Wong, T.K.S.
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2009
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7-9 |
p. 1918-1920
3 p.
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