| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact wide band filter based on the left handed material theory
|
Huang, C.
|
|
2008
|
|
10 |
p. 2183-2186
4 p.
|
artikel
|
| 2 |
A direct-write microfluidic fabrication process for CMOS-based Lab-on-Chip applications
|
Ghafar-Zadeh, Ebrahim
|
|
2009
|
|
10 |
p. 2104-2109
6 p.
|
artikel
|
| 3 |
A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer
|
Filip, V.
|
|
2006
|
|
10 |
p. 1950-1956
7 p.
|
artikel
|
| 4 |
A DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrier
|
Zhao, C.
|
|
2008
|
|
10 |
p. 2009-2012
4 p.
|
artikel
|
| 5 |
Air gap formation by UV-assisted decomposition of CVD material
|
Pantouvaki, M.
|
|
2008
|
|
10 |
p. 2071-2074
4 p.
|
artikel
|
| 6 |
Analysis of Cu/Low-k structure under back end of line process
|
Chiu, C.C.
|
|
2008
|
|
10 |
p. 2150-2154
5 p.
|
artikel
|
| 7 |
Analysis of nitride storage non-volatile memories with HfSiO x blocking dielectric and TiN metal gate for low power embedded applications
|
Golubović, Dušan S.
|
|
2009
|
|
10 |
p. 1999-2004
6 p.
|
artikel
|
| 8 |
Analysis of the line pattern width and exposure efficiency in maskless lithography using a digital micromirror device
|
Ryoo, Hoonchul
|
|
2011
|
|
10 |
p. 3145-3149
5 p.
|
artikel
|
| 9 |
Analytical model for the high-temperature behaviour of the subthreshold slope in MuGFETs
|
Lee, Chi-Woo
|
|
2009
|
|
10 |
p. 2067-2071
5 p.
|
artikel
|
| 10 |
An efficient wet-cleaning of SiGe virtual substrates and of thick, pure Ge layers on Si(001) after a chemical mechanical planarization step
|
Abbadie, A.
|
|
2006
|
|
10 |
p. 1986-1993
8 p.
|
artikel
|
| 11 |
A new ultrasonic precise bonding method with ultrasound propagation feedback for polymer MEMS
|
Sun, Yibo
|
|
2011
|
|
10 |
p. 3049-3053
5 p.
|
artikel
|
| 12 |
A novel fabrication of polymer film with tapered sub-wavelength structures for anti-reflection
|
Wu, Jing-Tang
|
|
2010
|
|
10 |
p. 1951-1954
4 p.
|
artikel
|
| 13 |
Application of VUV irradiation to promote the wet etch resistance of PSZ-SOG film inside the gap
|
Chen, Chia-Ming
|
|
2010
|
|
10 |
p. 1927-1931
5 p.
|
artikel
|
| 14 |
A printing technology combining screen-printing with a wet-etching process for the gate electrodes of organic thin film transistors on a plastic substrate
|
Lee, Mi-Young
|
|
2010
|
|
10 |
p. 1922-1926
5 p.
|
artikel
|
| 15 |
Arrays of discrete atomic beams for sub-λ/2 lithography via dipole force
|
Alti, Kamlesh
|
|
2006
|
|
10 |
p. 1975-1980
6 p.
|
artikel
|
| 16 |
A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum
|
Passi, Vikram
|
|
2010
|
|
10 |
p. 1872-1878
7 p.
|
artikel
|
| 17 |
A study on three-dimensional electrode arrays fabricated by PolyMUMPs® for AC electro-osmotic pumping
|
Guo, Xin
|
|
2011
|
|
10 |
p. 3113-3118
6 p.
|
artikel
|
| 18 |
Atom probe tomography of Ni silicides: First stages of reaction and redistribution of Pt
|
Mangelinck, D.
|
|
2008
|
|
10 |
p. 1995-1999
5 p.
|
artikel
|
| 19 |
Barrier and seed layer coverage in 3D structures with different aspect ratios using sputtering and ALD processes
|
Lühn, O.
|
|
2008
|
|
10 |
p. 1947-1951
5 p.
|
artikel
|
| 20 |
Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature
|
Peng, Y.S.
|
|
2010
|
|
10 |
p. 1834-1837
4 p.
|
artikel
|
| 21 |
Characterization of copper grain growth limitations inside narrow wires depending of overburden thickness
|
Dubreuil, O.
|
|
2008
|
|
10 |
p. 1988-1991
4 p.
|
artikel
|
| 22 |
Characterization of developing source/drain current of carbon nanotube field-effect transistors with n-doping by polyethylene imine
|
Chang-Jian, Shiang-Kuo
|
|
2010
|
|
10 |
p. 1973-1977
5 p.
|
artikel
|
| 23 |
Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization
|
Vilmay, M.
|
|
2008
|
|
10 |
p. 2075-2078
4 p.
|
artikel
|
| 24 |
Characterization of Ni/Ho and Ni/Er fully silicided metal gates on SiO2 gate dielectric
|
Wang, Bao-Min
|
|
2008
|
|
10 |
p. 2032-2036
5 p.
|
artikel
|
| 25 |
Characterization of reactive ion etching of benzocyclobutente in SF6/O2 plasmas
|
Chen, Qianwen
|
|
2010
|
|
10 |
p. 1945-1950
6 p.
|
artikel
|
| 26 |
Characterization of transient currents in HfO2 capacitors in the short timescale
|
Monzio Compagnoni, Christian
|
|
2006
|
|
10 |
p. 1927-1930
4 p.
|
artikel
|
| 27 |
Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors
|
Brunet, Magali
|
|
2009
|
|
10 |
p. 2034-2037
4 p.
|
artikel
|
| 28 |
Chemical bonds in damaged and pristine low-κ materials: A comparative EELS study
|
Stegmann, Heiko
|
|
2008
|
|
10 |
p. 2169-2171
3 p.
|
artikel
|
| 29 |
Chemical modification of carbon nanotube for improvement of field emission property
|
Lee, Sunwoo
|
|
2009
|
|
10 |
p. 2110-2113
4 p.
|
artikel
|
| 30 |
Chemo-rheological characteristics of a self-assembling anisotropic conductive adhesive system containing a low-melting point solder
|
Baek, Ji-Won
|
|
2010
|
|
10 |
p. 1968-1972
5 p.
|
artikel
|
| 31 |
CMOS optoelectronic components for clock distribution
|
Pownall, Robert
|
|
2010
|
|
10 |
p. 1838-1845
8 p.
|
artikel
|
| 32 |
Compressed-carbon dioxide (CO2) assisted nanoimprint lithography using polymeric mold
|
Choi, Won Mook
|
|
2006
|
|
10 |
p. 1957-1960
4 p.
|
artikel
|
| 33 |
Computational analysis of the interfacial effect on electromigration in flip chip solder joints
|
Kim, Dongchoul
|
|
2009
|
|
10 |
p. 2132-2137
6 p.
|
artikel
|
| 34 |
Computational and experimental investigation on the performance characteristics of the micro gas compressor
|
Yoon, Jae Sung
|
|
2009
|
|
10 |
p. 1975-1982
8 p.
|
artikel
|
| 35 |
Contents Continued
|
|
|
2009
|
|
10 |
p. II-
1 p.
|
artikel
|
| 36 |
Contents continued
|
|
|
2010
|
|
10 |
p. III-IV
nvt p.
|
artikel
|
| 37 |
Contents Continued
|
|
|
2006
|
|
10 |
p. 2032-
1 p.
|
artikel
|
| 38 |
Controlling the formation of nanoparticles for definite growth of carbon nanotubes for interconnect applications
|
Hermann, Sascha
|
|
2008
|
|
10 |
p. 1979-1983
5 p.
|
artikel
|
| 39 |
Cracking energy estimation of ultra low-k package using novel prediction approach combined with global–local modeling technique
|
Lee, Chang-Chun
|
|
2008
|
|
10 |
p. 2079-2084
6 p.
|
artikel
|
| 40 |
Cu contact on NiSi substrate with a Ta/TaN barrier stack
|
Zhou, Mi
|
|
2008
|
|
10 |
p. 2028-2031
4 p.
|
artikel
|
| 41 |
Cu grain growth in interconnects trenches – Experimental characterization of the overburden effect
|
Carreau, V.
|
|
2008
|
|
10 |
p. 2133-2136
4 p.
|
artikel
|
| 42 |
Damage predictions in a chip resistor solder joint on flexible circuit board
|
Rizvi, M.J.
|
|
2010
|
|
10 |
p. 1889-1895
7 p.
|
artikel
|
| 43 |
Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyond
|
Chapelon, L.L.
|
|
2008
|
|
10 |
p. 2098-2101
4 p.
|
artikel
|
| 44 |
Determination of the electronic parameters of nanostructure SnO2/p-Si diode
|
Caglar, Yasemin
|
|
2009
|
|
10 |
p. 2072-2077
6 p.
|
artikel
|
| 45 |
Development of a very large-area ultraviolet imprint lithography process
|
Kim, Ki-don
|
|
2009
|
|
10 |
p. 1983-1988
6 p.
|
artikel
|
| 46 |
Development of capillaries for wire bonding of low-k ultra-fine-pitch devices
|
Goh, K.S.
|
|
2006
|
|
10 |
p. 2009-2014
6 p.
|
artikel
|
| 47 |
Diffusional creep induced stress relaxation in thin Cu films on silicon
|
Chocyk, D.
|
|
2008
|
|
10 |
p. 2179-2182
4 p.
|
artikel
|
| 48 |
Diffusion barrier properties of TaN x films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
|
Xie, Qi
|
|
2008
|
|
10 |
p. 2059-2063
5 p.
|
artikel
|
| 49 |
Distributed transmission line phase shifter using parallel-plate ferroelectric thin film varactors
|
Sheng, Su
|
|
2010
|
|
10 |
p. 1932-1934
3 p.
|
artikel
|
| 50 |
Double channel field effect transistors (DCT) and demonstration of static single transistor bit cell
|
Wirbeleit, Frank
|
|
2010
|
|
10 |
p. 1992-1996
5 p.
|
artikel
|
| 51 |
Editorial Board
|
|
|
2006
|
|
10 |
p. CO2-
1 p.
|
artikel
|
| 52 |
Effect of Ag micro-particles content on the mechanical strength of the interface formed between Sn–Zn binary solder and Au/Ni/Cu bond pads
|
Das, S.K.
|
|
2009
|
|
10 |
p. 2086-2093
8 p.
|
artikel
|
| 53 |
Effect of a surface pre-treatment on graphene growth using a SiC substrate
|
Seo, Jun-Ho
|
|
2010
|
|
10 |
p. 2002-2007
6 p.
|
artikel
|
| 54 |
Effect of electronic flame off parameters on copper bonding wire: Free-air ball deformability, heat affected zone length, heat affected zone breaking force
|
Hang, C.J.
|
|
2009
|
|
10 |
p. 2094-2103
10 p.
|
artikel
|
| 55 |
Effect of H2O evolving from TEOS based SiO2 film on the EEPROM cell characteristic
|
Lee, Junghwan
|
|
2006
|
|
10 |
p. 2001-2003
3 p.
|
artikel
|
| 56 |
Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths
|
Prager, L.
|
|
2008
|
|
10 |
p. 2094-2097
4 p.
|
artikel
|
| 57 |
Effect of series resistance on the electrical characteristics and interface state energy distributions of Sn/p-Si (MS) Schottky diodes
|
Karataş, Şükrü
|
|
2010
|
|
10 |
p. 1935-1940
6 p.
|
artikel
|
| 58 |
Effect of wet chemical substrate pretreatment on the growth behavior of Ta(N) films deposited by thermal ALD
|
Strehle, S.
|
|
2008
|
|
10 |
p. 2064-2067
4 p.
|
artikel
|
| 59 |
Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices
|
Fu, Chung-Hao
|
|
2010
|
|
10 |
p. 2014-2018
5 p.
|
artikel
|
| 60 |
Electrochemical behavior of copper and cobalt in post-etch cleaning solutions
|
Bilouk, S.
|
|
2009
|
|
10 |
p. 2038-2044
7 p.
|
artikel
|
| 61 |
Electrodepositing amorphous Ni-W alloys for MEMS
|
Wang, Hong
|
|
2010
|
|
10 |
p. 1901-1906
6 p.
|
artikel
|
| 62 |
Electronic transport properties in copper nanowire
|
Mohammadzadeh, Saeideh
|
|
2008
|
|
10 |
p. 1992-1994
3 p.
|
artikel
|
| 63 |
Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness
|
Jeong, Hwan Hee
|
|
2011
|
|
10 |
p. 3164-3167
4 p.
|
artikel
|
| 64 |
Environmentally sustainable composite resistors with low temperature coefficient of resistance
|
Jagtap, Shweta
|
|
2009
|
|
10 |
p. 2026-2029
4 p.
|
artikel
|
| 65 |
Erratum to “Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing” Microelectronic Engineering 85 (2008) 2411–2413
|
Tsoutsou, D.
|
|
2009
|
|
10 |
p. 2138-
1 p.
|
artikel
|
| 66 |
Erratum to “Morphological influence of the beam overlap in focused ion beam induced deposition using raster scan” [Microelectron. Eng. 87 (5–8) (2010) 972–976]
|
Kim, Chung-Soo
|
|
2010
|
|
10 |
p. 2024-
1 p.
|
artikel
|
| 67 |
Evaluation of plasma damage in ultra-low-k materials with cap film using “extracted k-value” method
|
Takahashi, Hyoh
|
|
2008
|
|
10 |
p. 2107-2110
4 p.
|
artikel
|
| 68 |
Experiment-based estimation of point spread function in electron-beam lithography: Forward-scattering part
|
Dai, Q.
|
|
2011
|
|
10 |
p. 3054-3061
8 p.
|
artikel
|
| 69 |
Exposure parameters for MeV proton beam writing on SU-8
|
Auzelyte, Vaida
|
|
2006
|
|
10 |
p. 2015-2020
6 p.
|
artikel
|
| 70 |
Extensive investigations of temperature influence on barrier integrity during reliability testing
|
Aubel, O.
|
|
2008
|
|
10 |
p. 2042-2046
5 p.
|
artikel
|
| 71 |
Fabrication and characterization of bilayer metal wire-grid polarizer using nanoimprint lithography on flexible plastic substrate
|
Meng, Fantao
|
|
2011
|
|
10 |
p. 3108-3112
5 p.
|
artikel
|
| 72 |
Fabrication and characterization of p–n junctions based on ZnO and CuPc
|
Gupta, R.K.
|
|
2011
|
|
10 |
p. 3067-3069
3 p.
|
artikel
|
| 73 |
Fabrication and characterization of surface micromachined stacked transformer on glass substrate
|
Yunas, Jumril
|
|
2009
|
|
10 |
p. 2020-2025
6 p.
|
artikel
|
| 74 |
Fabrication and characterization of Zr-rich Zr-aluminate films for high-κ gate dielectric applications
|
Li, Yuanpeng
|
|
2006
|
|
10 |
p. 1905-1911
7 p.
|
artikel
|
| 75 |
Fabrication of CNTs/Cu composite thin films for interconnects application
|
Liu, Ping
|
|
2008
|
|
10 |
p. 1984-1987
4 p.
|
artikel
|
| 76 |
Fabrication of periodic square arrays by angle-resolved nanosphere lithography
|
Lee, Kwang Hong
|
|
2010
|
|
10 |
p. 1941-1944
4 p.
|
artikel
|
| 77 |
Fabrication of submicron photon sieve using E-beam lithography and X-ray lithography
|
Jiang, Wenbo
|
|
2011
|
|
10 |
p. 3178-3181
4 p.
|
artikel
|
| 78 |
Fabrication of surface plasmon waveguides and integrated components on Cytop
|
Daviau, Richard
|
|
2010
|
|
10 |
p. 1914-1921
8 p.
|
artikel
|
| 79 |
Facilitating intermetallic formation in wire bonding by applying a pre-ultrasonic energy
|
Xu, H.
|
|
2011
|
|
10 |
p. 3155-3157
3 p.
|
artikel
|
| 80 |
Flexible embedded circuitry: A novel process for high density, cost effective electronics
|
van den Brand, Jeroen
|
|
2010
|
|
10 |
p. 1861-1867
7 p.
|
artikel
|
| 81 |
Formation of Ge nanocrystals in a silicon dioxide layer using pulsed plasma-immersion ion implantation
|
Kim, Young Min
|
|
2009
|
|
10 |
p. 2045-2048
4 p.
|
artikel
|
| 82 |
Formation of lateral thin-film 700-V insulated-gate bipolar transistors by using retrograde p-well double implantation scheme
|
Juang, M.-H.
|
|
2011
|
|
10 |
p. 3119-3122
4 p.
|
artikel
|
| 83 |
Formation speed of atomically flat surface on Si (100) in ultra-pure argon
|
Li, Xiang
|
|
2011
|
|
10 |
p. 3133-3139
7 p.
|
artikel
|
| 84 |
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
|
Arslan, Engin
|
|
2010
|
|
10 |
p. 1997-2001
5 p.
|
artikel
|
| 85 |
Gate dielectric degradation in CMOS inverters
|
Martín-Martínez, J.
|
|
2009
|
|
10 |
p. 2123-2126
4 p.
|
artikel
|
| 86 |
Gentle FUSI NiSi metal gate process for high-k dielectric screening
|
Gottlob, H.D.B.
|
|
2008
|
|
10 |
p. 2019-2021
3 p.
|
artikel
|
| 87 |
High aspect ratio copper through-silicon-vias for 3D integration
|
Song, Chongshen
|
|
2008
|
|
10 |
p. 1952-1956
5 p.
|
artikel
|
| 88 |
High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed
|
Druais, G.
|
|
2008
|
|
10 |
p. 1957-1961
5 p.
|
artikel
|
| 89 |
High-powered thermal gel degradation evaluation on board-level HFCBGA subjected to reliability tests
|
Wang, Tong Hong
|
|
2011
|
|
10 |
p. 3101-3107
7 p.
|
artikel
|
| 90 |
How to improve intrinsic and extrinsic reliability of vias by process optimization
|
Penka, Sabine
|
|
2008
|
|
10 |
p. 2123-2127
5 p.
|
artikel
|
| 91 |
Impact of Al in Cu alloy interconnects on electro and stress migration reliabilities
|
Maekawa, Kazuyoshi
|
|
2008
|
|
10 |
p. 2137-2141
5 p.
|
artikel
|
| 92 |
Impact of dummy metal filling strategy dedicated to inductors integrated in advanced thick copper RF BEOL
|
Pastore, C.
|
|
2008
|
|
10 |
p. 1962-1966
5 p.
|
artikel
|
| 93 |
Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs
|
Chabukswar, S.
|
|
2010
|
|
10 |
p. 1963-1967
5 p.
|
artikel
|
| 94 |
Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface
|
Tsutsui, Kazuo
|
|
2008
|
|
10 |
p. 2000-2004
5 p.
|
artikel
|
| 95 |
Improving bulk FinFET DC performance in comparison to SOI FinFET
|
Poljak, Mirko
|
|
2009
|
|
10 |
p. 2078-2085
8 p.
|
artikel
|
| 96 |
Increasing bondability and ball-shear force of gold balls thermosonic bonding to flex substrates by depositing a nickel layer
|
Chuang, Cheng-Li
|
|
2011
|
|
10 |
p. 3080-3086
7 p.
|
artikel
|
| 97 |
Influence of NH3 plasma treatment on chemical bonding and water adsorption of low-k SiCOH film
|
Guo, Hao-Wen
|
|
2008
|
|
10 |
p. 2114-2117
4 p.
|
artikel
|
| 98 |
Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor
|
Chen, Ai Hua
|
|
2010
|
|
10 |
p. 2019-2023
5 p.
|
artikel
|
| 99 |
Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors
|
Atanassova, E.
|
|
2006
|
|
10 |
p. 1918-1926
9 p.
|
artikel
|
| 100 |
Influences of bottom electrode TaN on electrical characteristics for metal–HfO2–metal capacitors
|
Kang, Tsung-Kuei
|
|
2009
|
|
10 |
p. 1994-1998
5 p.
|
artikel
|
| 101 |
Inkjetting dielectric layer for electronic applications
|
Kaija, Kimmo
|
|
2010
|
|
10 |
p. 1984-1991
8 p.
|
artikel
|
| 102 |
Inside Front Cover - Editorial Board
|
|
|
2009
|
|
10 |
p. IFC-
1 p.
|
artikel
|
| 103 |
Inside Front Cover - Editorial Board
|
|
|
2010
|
|
10 |
p. IFC-
1 p.
|
artikel
|
| 104 |
Inside Front Cover - Editorial Board
|
|
|
2008
|
|
10 |
p. IFC-
1 p.
|
artikel
|
| 105 |
Inside Front Cover - Editorial Board
|
|
|
2011
|
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