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                             171 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A 2.4 GHz low-IF receiver for wideband WLAN in 0.6μm CMOS Behbahani, Farbod
 2000
 1-2 p. 63-71
9 p.
 artikel
2 A 2.4 GHz low-IF receiver for wideband WLAN in 0.6μm CMOS Behbahani, Farbod
 2000
 1-2 p. 73-83
11 p.
 artikel
3 A method for hybrid lithography Owen, Geraint
 1988
 1-2 p. 93-103
11 p.
 artikel
4 An efficient DC-gain matched balanced truncation realization for VLSI interconnect circuit order reduction Zeng, Xuan
 2002
 1-2 p. 3-15
13 p.
 artikel
5 An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabrication Weiner, K.H.
 1993
 1-2 p. 107-130
24 p.
 artikel
6 An in-situ X-ray topography observation of dislocations, crystal–melt interface and melting of silicon Wang, Yuren
 2001
 1-2 p. 143-146
4 p.
 artikel
7 A 10 nm MOSFET concept Appenzeller, J
 2001
 1-2 p. 213-219
7 p.
 artikel
8 A novel fast capillary discharge system emitting intense EUV radiation Mohanty, S.R
 2003
 1-2 p. 47-59
13 p.
 artikel
9 An overview of supercritical CO2 applications in microelectronics processing Weibel, Gina L
 2003
 1-2 p. 145-152
8 p.
 artikel
10 Application of combined thermal and electrical simulation for optimization of deep submicron interconnection systems Streiter, R
 2002
 1-2 p. 39-49
11 p.
 artikel
11 A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications Yoo, Jung-Ho
 2001
 1-2 p. 187-190
4 p.
 artikel
12 A study on the Pt electrode etching for 0.15 μm technologies Kim, Hyoun-Woo
 2003
 1-2 p. 185-195
11 p.
 artikel
13 Asynchronous circuits and systems : a promising design alternative Renaudin, M
 2000
 1-2 p. 133-149
17 p.
 artikel
14 A system-architecture viewpoint on smart networked devices Privat, Gilles
 2000
 1-2 p. 193-197
5 p.
 artikel
15 A thermal detachment mechanism for particle removal from surfaces by pulsed laser irradiation Kelley, J.D.
 1993
 1-2 p. 159-170
12 p.
 artikel
16 Author index 2000
 1-2 p. 209-210
2 p.
 artikel
17 Author index 1999
 1-2 p. 203-204
2 p.
 artikel
18 Author Index Volume 60, Numbers 1–2 2002
 1-2 p. 289-294
6 p.
 artikel
19 Author Index Volume 56, Numbers 1-2 2001
 1-2 p. 227-232
6 p.
 artikel
20 A virtual 3-D fast extractor for interconnect capacitance of multiple dielectrics Yang, Zhaozhi
 2003
 1-2 p. 133-144
12 p.
 artikel
21 Bare-board e-beam testing: The charge storage problem Brunner, M.
 1988
 1-2 p. 25-35
11 p.
 artikel
22 Built-in self-test Zorian, Yervant
 1999
 1-2 p. 135-138
4 p.
 artikel
23 Calendar of events 1988
 1-2 p. 121-123
3 p.
 artikel
24 Can Si(113) wafers be an alternative to Si(001)? Müssig, H.-J.
 2001
 1-2 p. 195-203
9 p.
 artikel
25 Characterisation of charge trapping at the Si–SiO2 (100) interface using high-temperature conductance spectroscopy Duval, E
 2003
 1-2 p. 103-112
10 p.
 artikel
26 Characterisation of the electroless nickel deposit as a barrier layer/under bump metallurgy on IC metallisation Rohan, James F
 2003
 1-2 p. 77-85
9 p.
 artikel
27 Characterization of barrier/seed layer stacks of Cu interconnects by electron tomographic three-dimensional object reconstruction Stegmann, Heiko
 2003
 1-2 p. 171-183
13 p.
 artikel
28 Characterization of porous structure in ultra-low-κ dielectrics by depositing thin conductive cap layers Iacopi, F
 2003
 1-2 p. 123-131
9 p.
 artikel
29 Charge-transfer complexes applied to photolithography by formation of a portable conformable mask and as a contrast-enhancement layer Rosilio, C.
 1988
 1-2 p. 37-54
18 p.
 artikel
30 Circuit failure identification using focused ion beam and transmission electron microscopy characterisation techniques Pantel, R.
 1999
 1-2 p. 181-189
9 p.
 artikel
31 Committees 2002
 1-2 p. ix-
1 p.
 artikel
32 Committees 1999
 1-2 p. vi-
1 p.
 artikel
33 Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors Segal, A.S.
 2001
 1-2 p. 93-98
6 p.
 artikel
34 Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO2 xerogel films Murray, C
 2002
 1-2 p. 133-141
9 p.
 artikel
35 Concurrent checking for VLSI Nicolaidis, M.
 1999
 1-2 p. 139-156
18 p.
 artikel
36 Contribution to the study of polysilanes for high-resolution photolithography Rosilio, C.
 1988
 1-2 p. 55-78
24 p.
 artikel
37 Converter performances Jespers, P.
 2000
 1-2 p. 85-101
17 p.
 artikel
38 Copper alloy formation and film properties after annealing of Al/Cu stacks in different ambients Chen, Zhitao
 2002
 1-2 p. 89-95
7 p.
 artikel
39 Correlation between microstructure control, density and diffusion barrier properties of TiN(O) films Alberti, A.
 2002
 1-2 p. 81-87
7 p.
 artikel
40 Cost reduction strategies for wafer expenditure Pfitzner, Lothar
 2001
 1-2 p. 61-71
11 p.
 artikel
41 Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition Kang, Jinfeng
 2001
 1-2 p. 191-194
4 p.
 artikel
42 Determination of electroless kinetic: a QCM study Zouhou, A
 2001
 1-2 p. 177-180
4 p.
 artikel
43 Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring Dewan, M.N.A.
 2003
 1-2 p. 25-46
22 p.
 artikel
44 Diffusion and electrical activity of copper in Si1−x−y Ge x C y alloys Hattab, A
 2002
 1-2 p. 283-288
6 p.
 artikel
45 3D-microstructure replication processes using UV-curable acrylates Elsner, C
 2003
 1-2 p. 163-170
8 p.
 artikel
46 DSP-MCU processor optimization for portable applications de Dinechin, Benoit Dupont
 2000
 1-2 p. 123-132
10 p.
 artikel
47 Editorial Zapka, W.
 1993
 1-2 p. 1-2
2 p.
 artikel
48 Editorial Radelaar, Sybrand
 1988
 1-2 p. 1-
1 p.
 artikel
49 Editorial Board 2003
 1-2 p. ii-
1 p.
 artikel
50 Editorial board 2000
 1-2 p. FM2-
1 p.
 artikel
51 Editorial Board 1999
 1-2 p. ii-
1 p.
 artikel
52 Editorial Board 1992
 1-2 p. ii-
1 p.
 artikel
53 Editorial Board 1993
 1-2 p. ii-
1 p.
 artikel
54 Editorial Board 1988
 1-2 p. ii-
1 p.
 artikel
55 Effect of dopants on chemical mechanical polishing of silicon Forsberg, M
 2002
 1-2 p. 149-155
7 p.
 artikel
56 Effect of doping on point defect incorporation during silicon growth Voronkov, V.V
 2001
 1-2 p. 165-168
4 p.
 artikel
57 Effect of mechanical process parameters on chemical mechanical polishing of Al thin films Cho, Woong
 2003
 1-2 p. 13-23
11 p.
 artikel
58 Effect of solvent on the preparation of ambient pressure-dried SiO2 aerogel films Jung, Sang-Bae
 2003
 1-2 p. 113-122
10 p.
 artikel
59 Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and scalability of the TiSi2 process La Via, F
 2002
 1-2 p. 197-203
7 p.
 artikel
60 Effects of substrate bias and temperature during titanium sputter-deposition on the phase formation in TiSi2 Lundqvist, N
 2002
 1-2 p. 211-220
10 p.
 artikel
61 Effects of various magnetic field configurations on temperature distributions in Czochralski silicon melts Gräbner, O.
 2001
 1-2 p. 83-88
6 p.
 artikel
62 Electrical testing for failure analysis: E-beam testing Vallet, Michel
 1999
 1-2 p. 157-167
11 p.
 artikel
63 Electroless and sputtered silver–tungsten thin films for microelectronics applications Inberg, A
 2003
 1-2 p. 197-207
11 p.
 artikel
64 Electromigration and mechanical stress Lloyd, J.R.
 1999
 1-2 p. 51-64
14 p.
 artikel
65 Electromigration resistance of sputtered silver lines using different patterning techniques Hauder, M
 2002
 1-2 p. 51-57
7 p.
 artikel
66 Electronic transport in Ru–Si–O and Ir–Si–O amorphous thin films Gottlieb, U.
 2002
 1-2 p. 107-111
5 p.
 artikel
67 Electron microscopic investigation of MnSi1.7 layers on Si(001) Mogilatenko, A
 2002
 1-2 p. 247-254
8 p.
 artikel
68 Electrostatic discharges (ESD), latch-up and pad design constraints Salome, Pascal
 1999
 1-2 p. 83-94
12 p.
 artikel
69 Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB) Ghibaudo, G.
 1999
 1-2 p. 41-50
10 p.
 artikel
70 Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack Lee, P.S
 2002
 1-2 p. 171-181
11 p.
 artikel
71 Enhancement of ALCVD™ TiN growth on Si–O–C and α-SiC:H films by O2-based plasma treatments Satta, A
 2002
 1-2 p. 59-69
11 p.
 artikel
72 Enhancement of gettering efficiencies of different silicon substrates during a 0.18 μm LTB CMOS process simulation – Hoelzl, R.
 2001
 1-2 p. 153-156
4 p.
 artikel
73 Environmentally friendly wafer production: NF3 remote microwave plasma for chamber cleaning Reichardt, H
 2001
 1-2 p. 73-76
4 p.
 artikel
74 Epitaxial structures of GaAs/GaAlAs on Ge substrates by MOVPE for photovoltaic applications Flores, C
 1992
 1-2 p. 175-188
14 p.
 artikel
75 Equilibrium point defect concentration in a growing silicon crystal Tanahashi, K
 2001
 1-2 p. 133-137
5 p.
 artikel
76 Erratum to: Recent progress in EUV source development at GREMI Mohanty, Smruti Ranjan
 2003
 1-2 p. 247-
1 p.
 artikel
77 Esterel methodology for complex system design Blanc, Lionel
 2000
 1-2 p. 163-170
8 p.
 artikel
78 European 300 mm metrology platform — MEDEA T618 Trilhe, J
 2001
 1-2 p. 15-25
11 p.
 artikel
79 Evaluation of mechanical stresses in silicon substrates due to lead–tin solder bumps via synchrotron X-ray topography and finite element modeling Kanatharana, J.
 2003
 1-2 p. 209-221
13 p.
 artikel
80 Evaluations of 300 mm Si wafer performances for giga ULSI device processes Takahashi, Kenji
 2001
 1-2 p. 27-39
13 p.
 artikel
81 Financial supports 1999
 1-2 p. vii-
1 p.
 artikel
82 Front-end, single-wafer diffusion processing for advanced 300-mm fabrication lines Bensahel, D
 2001
 1-2 p. 49-59
11 p.
 artikel
83 Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface Evstratov, I.Yu
 2001
 1-2 p. 139-142
4 p.
 artikel
84 Growth and stress analysis of necks for 300 mm CZ silicon single crystals Tu, H.
 2001
 1-2 p. 89-92
4 p.
 artikel
85 Growth of InGaAs/InP quantum well structures by low-pressure metalorganic chemical vapor deposition McCrary, V.R
 1992
 1-2 p. 75-88
14 p.
 artikel
86 Hardware software system codesign based on SDL/C specifications Moreau, Jean-Pierre
 2000
 1-2 p. 181-191
11 p.
 artikel
87 Heterostructure field effect transistors grown by MOVPE Heuken, Michael
 1992
 1-2 p. 33-55
23 p.
 artikel
88 Highly accurate closed form approximation for frequency-dependent line impedance of a lossy silicon substrate IC interconnect Ymeri, H
 2002
 1-2 p. 31-37
7 p.
 artikel
89 Hot carrier degradation and time-dependent dielectric breakdown in oxides Groeseneken, G.
 1999
 1-2 p. 27-40
14 p.
 artikel
90 Initial reactions in Ti–Si(Mo) bilayers Cocchi, R
 2002
 1-2 p. 231-238
8 p.
 artikel
91 In situ Raman spectroscopy study on silicon surface in NH4OH/H2O2 and HCl/H2O2 aqueous solutions Wang, J.
 2001
 1-2 p. 221-225
5 p.
 artikel
92 Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect Fayolle, M
 2002
 1-2 p. 119-124
6 p.
 artikel
93 Integration of fluorine-doped silicon oxide in copper pilot line for 0.12-μm technology Reynard, J.P
 2002
 1-2 p. 113-118
6 p.
 artikel
94 Intrinsic gettering of 300 mm CZ wafers Bialas, F.
 2001
 1-2 p. 157-163
7 p.
 artikel
95 Introduction to reliability Delarozée, G.
 1999
 1-2 p. 3-10
8 p.
 artikel
96 Issues for logic CMOS integration in Systems on a Chip (SoC) Haond, M.
 2000
 1-2 p. 23-34
12 p.
 artikel
97 Issues for the larger diameter epitaxial wafer Imai, M
 2001
 1-2 p. 109-115
7 p.
 artikel
98 Large-scale MOVPE production systems Jürgensen, H
 1992
 1-2 p. 119-148
30 p.
 artikel
99 Laser ablation of polymers for high-density interconnect Liu, Y.S.
 1993
 1-2 p. 15-29
15 p.
 artikel
100 Laser-assisted particle removal from silicon surfaces Lee, S.J.
 1993
 1-2 p. 145-157
13 p.
 artikel
101 “Laser cleaning” removes particles from surfaces Zapka, W.
 1993
 1-2 p. 171-183
13 p.
 artikel
102 Laser processing of electrically conducting polymers into patterns Bargon, Joachim
 1993
 1-2 p. 55-72
18 p.
 artikel
103 Laser recrystallization of polysilicon on monocrystalline insulating substrates Haisma, Jan
 1988
 1-2 p. 105-120
16 p.
 artikel
104 Light emission microscopy for reliability studies Leroux, Charles
 1999
 1-2 p. 169-180
12 p.
 artikel
105 Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers Thijs, P.J.A
 1992
 1-2 p. 57-74
18 p.
 artikel
106 Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applications Lee, S.-K
 2002
 1-2 p. 261-268
8 p.
 artikel
107 Luminescence lifetime of the 1.5-μm emission of β-FeSi2 precipitate layers in silicon Schuller, B
 2002
 1-2 p. 205-210
6 p.
 artikel
108 Material and device technologies for advanced, high-performance, and radiation-hardened CMOS circuits Smeltzer, R.K.
 1988
 1-2 p. 79-91
13 p.
 artikel
109 MBE-growth of a Ge–CoSi2–Si heterostructure for vertical metal–semiconductor–metal photodetectors Winnerl, S
 2002
 1-2 p. 191-196
6 p.
 artikel
110 Mechanical properties of 300 mm wafers Akatsuka, M
 2001
 1-2 p. 99-107
9 p.
 artikel
111 Microfabrication of semiconductors by means of excimer laser doping Toyoda, Koichi
 1993
 1-2 p. 131-143
13 p.
 artikel
112 Micro/nano machining of polymeric substrates by ion beam techniques He, W
 2003
 1-2 p. 153-161
9 p.
 artikel
113 Mixed-mode system design: VHDL-AMS Garcia Sabiro, Serge
 2000
 1-2 p. 171-180
10 p.
 artikel
114 Modelling and simulation of reliability for design Mathewson, A.
 1999
 1-2 p. 95-117
23 p.
 artikel
115 Modification of electrical conductivity and surface structure in polymers using ultraviolet laser radiation Phillips, H.M.
 1993
 1-2 p. 73-88
16 p.
 artikel
116 Molecular-dynamics study of mechanical properties of nanoscale copper with vacancies under static and cyclic loading Chang, Win-Jin
 2003
 1-2 p. 239-246
8 p.
 artikel
117 MOVPE for optoelectronics Speier, P
 1992
 1-2 p. 1-31
31 p.
 artikel
118 MOVPE growth of (Al)GaAs on GaAs and Si for photovoltaic applications Dieter, R.J
 1992
 1-2 p. 189-205
17 p.
 artikel
119 MOVPE in GaInAsP systems for opto-electronic applications Grützmacher, D
 1992
 1-2 p. 89-117
29 p.
 artikel
120 Nanomechanical properties of copper thin films on different substrates using the nanoindentation technique Fang, Te-Hua
 2003
 1-2 p. 231-238
8 p.
 artikel
121 Nanometer patterning of epitaxial CoSi2 on silicon-on-insulator substrates Zhao, Q.T
 2002
 1-2 p. 183-190
8 p.
 artikel
122 Nanoscale reliability assessment of electronic devices Balk, L.J.
 1999
 1-2 p. 191-202
12 p.
 artikel
123 New CAD & IP directions Betts, Andrew K
 2000
 1-2 p. 151-162
12 p.
 artikel
124 New materials for active and passive integrated devices for wireless applications Gill, P
 2001
 1-2 p. 169-175
7 p.
 artikel
125 NiSi salicide technology for scaled CMOS Iwai, Hiroshi
 2002
 1-2 p. 157-169
13 p.
 artikel
126 Optical in-situ measurement of the dissolution rate of a silica-Czochralski-crucible with silicon melt and comparison to ex-situ measurements Mühe, A.
 2001
 1-2 p. 147-152
6 p.
 artikel
127 Optimization of CVD dielectric process to achieve reliable ultra low-k air gaps Arnal, Vincent
 2002
 1-2 p. 143-148
6 p.
 artikel
128 OS for embedded systems: state of the art and prospects Olive, V.
 2000
 1-2 p. 113-121
9 p.
 artikel
129 Packaging reliability Herard, Laurent
 1999
 1-2 p. 17-26
10 p.
 artikel
130 Pattern-dependent overlay error in optical step and repeat projection lithography Brunner, Timothy A.
 1988
 1-2 p. 13-24
12 p.
 artikel
131 Performances of planar GaAs and InGaAs Schottky diodes fabricated by Pr2O3-added liquid phase epitaxy Cheng, Y.C
 2003
 1-2 p. 223-229
7 p.
 artikel
132 Plasma-induced damage Viswanathan, C.R.
 1999
 1-2 p. 65-81
17 p.
 artikel
133 Polymer ablation with a high-power excimer laser tool Wolbold, Gerhard E.
 1993
 1-2 p. 3-14
12 p.
 artikel
134 Portable multimedia terminals: Architectural Issues of MPEG-4 visual implementation Gobert, J.
 2000
 1-2 p. 199-207
9 p.
 artikel
135 Preface 2002
 1-2 p. 1-2
2 p.
 artikel
136 Preface 2000
 1-2 p. 1-3
3 p.
 artikel
137 Preface 2001
 1-2 p. 1-
1 p.
 artikel
138 Preface Boussey, Jumana
 1999
 1-2 p. 1-2
2 p.
 artikel
139 Preface Schmitz, Dietmar
 1992
 1-2 p. vii-viii
nvt p.
 artikel
140 Process alternative: SOI for heterogeneous systems Flandre, D.
 2000
 1-2 p. 49-62
14 p.
 artikel
141 Process outlook for analog and RF applications Bruines, Joop J.P.
 2000
 1-2 p. 35-48
14 p.
 artikel
142 Production maturity of 64 M/256 M furnace and RTP processes on 300 mm wafers Kürner, W.
 2001
 1-2 p. 41-48
8 p.
 artikel
143 Progress toward excimer laser metal planarization and via hole filling using in-situ monitoring Carey, Paul G.
 1993
 1-2 p. 89-106
18 p.
 artikel
144 Qualifications strategies in IC manufacturing Delarozée, G.
 1999
 1-2 p. 11-16
6 p.
 artikel
145 Relation between temperature gradient at growth interface and growth rate in Czochralski silicon examined by heat balance equation Natsume, A.
 2001
 1-2 p. 129-132
4 p.
 artikel
146 Resonance enhancement of micromachined resonators with strong mechanical-coupling between two degrees of freedom Li, Xinxin
 2003
 1-2 p. 1-12
12 p.
 artikel
147 RF integrated systems Belot, Didier
 2000
 1-2 p. 103-111
9 p.
 artikel
148 Robust operation of copper chemical mechanical polishing Kao, Yi-Chung
 2003
 1-2 p. 61-75
15 p.
 artikel
149 Self-assembly patterning of epitaxial CoSi2 wires Kluth, P
 2002
 1-2 p. 239-245
7 p.
 artikel
150 Simulation of growth in pyrolytic laser-CVD of microstructures—II. Two-dimensional approach Arnold, N.
 1993
 1-2 p. 43-54
12 p.
 artikel
151 Simulation of growth in pyrolytic laser-CVD of microstructures—I. One-dimensional approach Arnold, N.
 1993
 1-2 p. 31-41
11 p.
 artikel
152 Stress control of sputter-deposited Mo–N films for micromechanical applications Kattelus, H
 2002
 1-2 p. 97-105
9 p.
 artikel
153 Stresses in thin films and interconnect lines Gudmundson, P.
 2002
 1-2 p. 17-29
13 p.
 artikel
154 Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide La Via, F
 2002
 1-2 p. 269-282
14 p.
 artikel
155 Study of CoSi2 formation from a Co–Ni alloy Chamirian, O
 2002
 1-2 p. 221-230
10 p.
 artikel
156 Study on linearity of a micromachined convective accelerometer Luo, X.B.
 2003
 1-2 p. 87-101
15 p.
 artikel
157 Surfactant mediated growth of silicides Teichert, S
 2002
 1-2 p. 255-259
5 p.
 artikel
158 System on a chip (SoC) and design methodology challenges Borel, Joseph
 2000
 1-2 p. 15-22
8 p.
 artikel
159 Tantalum carbide and nitride diffusion barriers for Cu metallisation Laurila, T
 2002
 1-2 p. 71-80
10 p.
 artikel
160 Techniques for analysing nanotopography on polished silicon wafers Müller, T.
 2001
 1-2 p. 123-127
5 p.
 artikel
161 Telecommunication applications: new challenges for microelectronics Senn, Patrice
 2000
 1-2 p. 5-14
10 p.
 artikel
162 Tenth micron lithography with a 10 Hz 37.2 nm sodium laser Silfvast, W.T.
 1988
 1-2 p. 3-11
9 p.
 artikel
163 Test challenges in nanometric CMOS technologies Figueras, Joan
 1999
 1-2 p. 119-133
15 p.
 artikel
164 The AlGaInAsP alloy system in low-pressure MOVPE Schmitz, D
 1992
 1-2 p. 149-173
25 p.
 artikel
165 The growth technology for 300 mm single crystal silicon Tu, H
 2001
 1-2 p. 77-82
6 p.
 artikel
166 The 300 mm silicon wafer — a cost and technology challenge Hahn, Peter O.
 2001
 1-2 p. 3-13
11 p.
 artikel
167 TiN barriers for high-k capacitors: simulations and experimental results Theiler, T.
 2001
 1-2 p. 181-185
5 p.
 artikel
168 Transmission electron microscopic observation of oxygen precipitates in nitrogen-doped silicon Li, Liben
 2001
 1-2 p. 205-208
4 p.
 artikel
169 Upper yield point of large diameter silicon Fischer, A.
 2001
 1-2 p. 117-122
6 p.
 artikel
170 Use of a capacitance voltage technique to study copper drift diffusion in (porous) inorganic low-k materials Lanckmans, F.
 2002
 1-2 p. 125-132
8 p.
 artikel
171 Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe Osten, H.J.
 2001
 1-2 p. 209-212
4 p.
 artikel
                             171 gevonden resultaten
 
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