| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Al and Ga diffusion barriers in molecular beam epitaxy
|
Dabiran, A.M.
|
|
1993
|
298 |
2-3 |
p. 384-391
8 p.
|
artikel
|
| 2 |
Analysis of monolayer films during molecular beam epitaxy by reflection electron energy loss spectroscopy
|
Atwater, Harry A.
|
|
1993
|
298 |
2-3 |
p. 273-283
11 p.
|
artikel
|
| 3 |
Application of electron holography to surface topography observation
|
Osakabe, Nobuyuki
|
|
1993
|
298 |
2-3 |
p. 345-350
6 p.
|
artikel
|
| 4 |
Applications of RHEED to the study of growth dynamics and surface chemistry during MBE
|
Joyce, B.A.
|
|
1993
|
298 |
2-3 |
p. 399-407
9 p.
|
artikel
|
| 5 |
Author index
|
|
|
1993
|
298 |
2-3 |
p. 478-483
6 p.
|
artikel
|
| 6 |
Contrast and resolution in REM, SEM and SAM
|
Cowley, J.M.
|
|
1993
|
298 |
2-3 |
p. 456-467
12 p.
|
artikel
|
| 7 |
Current effects on Si(111) surfaces at the phase transition between the 7 × 7 and the 1 × 1 structures. II
|
Yamaguchi, Hiroi
|
|
1993
|
298 |
2-3 |
p. 408-414
7 p.
|
artikel
|
| 8 |
Desorption of GaAs and its suppression by AlAs studied by RHEED intensity oscillations
|
Ohta, Kimihiro
|
|
1993
|
298 |
2-3 |
p. 415-420
6 p.
|
artikel
|
| 9 |
Dynamical diffraction effect for RHEED intensity oscillations: phase shift of oscillations for glancing angles
|
Horio, Y.
|
|
1993
|
298 |
2-3 |
p. 261-272
12 p.
|
artikel
|
| 10 |
Dynamical RHEED from disordered surfaces: Sharp reflections and diffuse scattering
|
Korte, U.
|
|
1993
|
298 |
2-3 |
p. 299-306
8 p.
|
artikel
|
| 11 |
Dynamical theory of RHEED from stepped surfaces
|
Beeby, J.L.
|
|
1993
|
298 |
2-3 |
p. 307-315
9 p.
|
artikel
|
| 12 |
Electron holography and holographic diffraction for surface studies
|
Cowley, J.M.
|
|
1993
|
298 |
2-3 |
p. 336-344
9 p.
|
artikel
|
| 13 |
Epitaxy of fcc and bcc Co, Ni, and Cu studied by X-ray photoelectron diffraction
|
Zhang, J.
|
|
1993
|
298 |
2-3 |
p. 351-361
11 p.
|
artikel
|
| 14 |
LEED from epitaxial surfaces
|
Henzler, M.
|
|
1993
|
298 |
2-3 |
p. 369-377
9 p.
|
artikel
|
| 15 |
Migration of Ga atoms during Si molecular beam epitaxial growth on a Ga-adsorbed Si(111) surface
|
Nakahara, Hitoshi
|
|
1993
|
298 |
2-3 |
p. 440-449
10 p.
|
artikel
|
| 16 |
Nucleation and growth of square islands during deposition: Sizes, coalescence, separations and correlations
|
Bartelt, M.C.
|
|
1993
|
298 |
2-3 |
p. 421-431
11 p.
|
artikel
|
| 17 |
Preface
|
Cohen, P.L.
|
|
1993
|
298 |
2-3 |
p. iii-
1 p.
|
artikel
|
| 18 |
Relation between surface step density and RHEED intensity
|
Kawamura, Takaaki
|
|
1993
|
298 |
2-3 |
p. 331-335
5 p.
|
artikel
|
| 19 |
REM observations of Si(hhk) surfaces and their vicinal surfaces
|
Suzuki, Takayuki
|
|
1993
|
298 |
2-3 |
p. 473-477
5 p.
|
artikel
|
| 20 |
RHEED oscillations at special diffraction conditions
|
Maksym, P.A.
|
|
1993
|
298 |
2-3 |
p. 293-298
6 p.
|
artikel
|
| 21 |
Simulation of high-resolution REM images
|
McCoy, J.M.
|
|
1993
|
298 |
2-3 |
p. 468-472
5 p.
|
artikel
|
| 22 |
Structural analysis of Si(111) surfaces during homoepitaxial growth
|
Ichimiya, A.
|
|
1993
|
298 |
2-3 |
p. 284-292
9 p.
|
artikel
|
| 23 |
Subject index
|
|
|
1993
|
298 |
2-3 |
p. 484-495
12 p.
|
artikel
|
| 24 |
Surface atom dynamics in epitaxial growth studied by RHEED-TRAXS
|
Ino, Shozo
|
|
1993
|
298 |
2-3 |
p. 432-439
8 p.
|
artikel
|
| 25 |
Surface atomic structure and surface force constants: Cu(100)2√2 × √2-R45°-O and LaB6(100)
|
Oshima, C.
|
|
1993
|
298 |
2-3 |
p. 450-455
6 p.
|
artikel
|
| 26 |
Surface self-diffusion barrier of Pd(100) from low-energy electron diffraction
|
Evans, J.W.
|
|
1993
|
298 |
2-3 |
p. 378-383
6 p.
|
artikel
|
| 27 |
Surface-structure analysis by forward scattering in photoelectron and Auger-electron diffraction and by backscattered primary electron diffraction
|
Kono, S.
|
|
1993
|
298 |
2-3 |
p. 362-368
7 p.
|
artikel
|
| 28 |
Tensor theories of high energy electron diffraction and their use in surface crystallography
|
Peng, L.-M.
|
|
1993
|
298 |
2-3 |
p. 316-330
15 p.
|
artikel
|
| 29 |
The dynamical transition to step-flow growth during molecular-beam epitaxy of GaAs(00l)
|
Johnson, M.D.
|
|
1993
|
298 |
2-3 |
p. 392-398
7 p.
|
artikel
|
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