| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of the structural properties of anodized aluminium films
|
Chari, K.S.
|
|
1981
|
81 |
3 |
p. 271-278
8 p.
|
artikel
|
| 2 |
Chromium plating
|
Larsson, C.N.
|
|
1981
|
81 |
3 |
p. L107-
1 p.
|
artikel
|
| 3 |
Conference anouncements
|
|
|
1981
|
81 |
3 |
p. L105-
1 p.
|
artikel
|
| 4 |
Deposition of A1N thin films by magnetron reactive sputtering
|
Gerova, E.V.
|
|
1981
|
81 |
3 |
p. 201-206
6 p.
|
artikel
|
| 5 |
Depth resolution in composition profiles by ion sputtering and surface analysis for single-layer and multilayer structures on real substrates
|
Seah, M.P.
|
|
1981
|
81 |
3 |
p. 257-270
14 p.
|
artikel
|
| 6 |
Effect of temperature on the dispersion of nickel deposited onto amorphous substrates of carbon, SiO and glass
|
Kȩpiński, Leszek
|
|
1981
|
81 |
3 |
p. 225-238
14 p.
|
artikel
|
| 7 |
Germanide formation by thermal treatment of platinum films deposited on single-crystal Ge〈100〉 substrates
|
Grimaldi, M.G.
|
|
1981
|
81 |
3 |
p. 207-211
5 p.
|
artikel
|
| 8 |
Growth-promoting dissociated dislocations in solution-grown silicon
|
Käss, D.
|
|
1981
|
81 |
3 |
p. L101-L104
nvt p.
|
artikel
|
| 9 |
Metastable structures in Au-Si thin films
|
Dhere, Neelkanth G.
|
|
1981
|
81 |
3 |
p. 213-223
11 p.
|
artikel
|
| 10 |
Pure element sputtering yields using 500–1000 eV argon ions
|
Seah, M.P.
|
|
1981
|
81 |
3 |
p. 279-287
9 p.
|
artikel
|
| 11 |
The role of underpotential effects in the electrodeposition of alloys
|
Budniok, A.
|
|
1981
|
81 |
3 |
p. 289-299
11 p.
|
artikel
|
| 12 |
The statistical sputtering contribution to resolution in concentration-depth profiles
|
Seah, M.P.
|
|
1981
|
81 |
3 |
p. 239-246
8 p.
|
artikel
|
| 13 |
The use of a regular distribution of minute pinholes for the epitaxial growth of an oriented thin film
|
Hadni, A.
|
|
1981
|
81 |
3 |
p. 247-256
10 p.
|
artikel
|
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