| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A simple model for the adsorption of mixtures on solids involving energetic heterogeneity of the surface and differences in molecular sizes of the components
|
Jaroniec, M.
|
|
1981
|
81 |
1 |
p. L97-L99
nvt p.
|
artikel
|
| 2 |
A study from electrical conductivity data of the defect concentration in as-grown indium thin films vacuum deposited at different deposition rates
|
Das, V.Damodara
|
|
1981
|
81 |
1 |
p. 21-25
5 p.
|
artikel
|
| 3 |
Direct observation of the duplex nature of anodic barrier films on aluminum
|
Shimizu, K.
|
|
1981
|
81 |
1 |
p. 39-44
6 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
1981
|
81 |
1 |
p. i-
1 p.
|
artikel
|
| 5 |
Effect of hydrogen on the growth kinetics of Pd2Si
|
Barbarino, A.E.
|
|
1981
|
81 |
1 |
p. 35-38
4 p.
|
artikel
|
| 6 |
Effect of water vapour on the switching phenomena in silver thin films produced by electroforming
|
Tanaka, Koji
|
|
1981
|
81 |
1 |
p. L85-L87
nvt p.
|
artikel
|
| 7 |
Gel-derived single-layer antireflection films with a refractive index gradient
|
Mukherjee, S.P.
|
|
1981
|
81 |
1 |
p. L89-L90
nvt p.
|
artikel
|
| 8 |
Low temperature resistivity of thin film and bulk samples of CuAl2 and Cu9Al4
|
Macchioni, C.
|
|
1981
|
81 |
1 |
p. 71-78
8 p.
|
artikel
|
| 9 |
Observation of gas absorption in evaporated amorphous silicon films using secondary ion mass spectrometry
|
Magee, Charles W.
|
|
1981
|
81 |
1 |
p. 1-6
6 p.
|
artikel
|
| 10 |
Phase transitions in adsorbed layers II: A simple theory exhibiting two phase transitions in monolayer films of gases on homogeneous solid surfaces
|
Patrykiejew, A.
|
|
1981
|
81 |
1 |
p. 89-99
11 p.
|
artikel
|
| 11 |
Preparation of ZnS films by reactive sputtering and their investigation by electron microscopy and Rutherford backscattering
|
Schönbrodt, L.
|
|
1981
|
81 |
1 |
p. 45-52
8 p.
|
artikel
|
| 12 |
Quantitative Auger electron spectroscopy and X-ray fluorescence analysis of CoSm alloy thin films deposited by co-evaporation
|
Anton, R.
|
|
1981
|
81 |
1 |
p. 53-60
8 p.
|
artikel
|
| 13 |
Stimulated crystallization of dielectric films on semiconductor surfaces (Si/SiO2)
|
Litovchenko, V.G.
|
|
1981
|
81 |
1 |
p. 27-34
8 p.
|
artikel
|
| 14 |
Temperature distribution in plasma-sprayed coatings
|
PawŁowski, Lech
|
|
1981
|
81 |
1 |
p. 79-88
10 p.
|
artikel
|
| 15 |
The effect of ion bombardment on stress and adhesion in thin films of silver and aluminum
|
Laugier, M.
|
|
1981
|
81 |
1 |
p. 61-69
9 p.
|
artikel
|
| 16 |
The effect of ion implantation on r.f.-sputtered TiB2 films
|
Padmanabhan, K.R.
|
|
1981
|
81 |
1 |
p. 13-19
7 p.
|
artikel
|
| 17 |
The orientation of vapour-deposited silver crystallites on mica
|
Gardiner, T.M.
|
|
1981
|
81 |
1 |
p. L93-L96
nvt p.
|
artikel
|
| 18 |
The origin of the uncommon X-ray reflections of CdS:Mn, Cl polycrystalline thin films
|
Ciecholewski, R.
|
|
1981
|
81 |
1 |
p. 7-12
6 p.
|
artikel
|
| 19 |
Titanium nitride films prepared by ion implantation
|
Chen, P.A.
|
|
1981
|
81 |
1 |
p. L91-L92
nvt p.
|
artikel
|
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