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                             60 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures Andoh, Nobuyuki
 2005
 487 1-2 p. 252-254
3 p.
 artikel
2 Aluminum-induced crystallization of amorphous silicon: Influence of temperature profiles Schneider, J.
 2005
 487 1-2 p. 107-112
6 p.
 artikel
3 Amorphous and nanocrystalline silicon-based multi-junction solar cells Yang, Jeffrey
 2005
 487 1-2 p. 162-169
8 p.
 artikel
4 Amorphous silicon-based PINIP structure for color sensor Zhang, S.
 2005
 487 1-2 p. 268-270
3 p.
 artikel
5 A multi-diode model for spatially inhomogeneous solar cells Grabitz, P.O.
 2005
 487 1-2 p. 14-18
5 p.
 artikel
6 Author Index of Volume 487 2005
 487 1-2 p. 288-289
2 p.
 artikel
7 Cathodoluminescent behaviour of sprayed ZnS specimens Ebothé, J.
 2005
 487 1-2 p. 54-57
4 p.
 artikel
8 Channel doping effects in poly-Si thin film transistors Valletta, A.
 2005
 487 1-2 p. 242-246
5 p.
 artikel
9 Correlation between structural properties and performances of microcrystalline silicon solar cells Delli Veneri, P.
 2005
 487 1-2 p. 174-178
5 p.
 artikel
10 Crystallization of Si films on glass substrate using thermal plasma jet Higashi, S.
 2005
 487 1-2 p. 122-125
4 p.
 artikel
11 Crystallization of silicon films by rapid joule heating method Andoh, Nobuyuki
 2005
 487 1-2 p. 118-121
4 p.
 artikel
12 Defect passivation in chemical vapour deposited fine-grained polycrystalline silicon by plasma hydrogenation Carnel, L.
 2005
 487 1-2 p. 147-151
5 p.
 artikel
13 Editorial Board 2005
 487 1-2 p. iii-
1 p.
 artikel
14 Effect of hydrogen passivation on polycrystalline silicon thin films Honda, S.
 2005
 487 1-2 p. 152-156
5 p.
 artikel
15 Effects of laser-ablated impurity on aligned ZnO nanorods grown by chemical vapor deposition Hirate, Takashi
 2005
 487 1-2 p. 35-39
5 p.
 artikel
16 Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization Ishihara, R.
 2005
 487 1-2 p. 97-101
5 p.
 artikel
17 Electrochemical deposition of nanocrystalline PbSe layers onto p-Si (100) wafers Ivanou, D.K.
 2005
 487 1-2 p. 49-53
5 p.
 artikel
18 Electrodeposition of semiconductors Lincot, Daniel
 2005
 487 1-2 p. 40-48
9 p.
 artikel
19 Electronic transport in P-doped laser-crystallized polycrystalline silicon Maydell, K.v.
 2005
 487 1-2 p. 93-96
4 p.
 artikel
20 Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates Imparato, Antonio
 2005
 487 1-2 p. 58-62
5 p.
 artikel
21 Fabrication of deep single trenches from N-type macroporous silicon Gautier, G.
 2005
 487 1-2 p. 283-287
5 p.
 artikel
22 Hydrogen diffusion and induced-crystallization in intrinsic and doped hydrogenated amorphous silicon films Kail, F.
 2005
 487 1-2 p. 126-131
6 p.
 artikel
23 Improved electrical stability in asymmetric fingered polysilicon thin film transistors Cuscunà, M.
 2005
 487 1-2 p. 237-241
5 p.
 artikel
24 Influence of laser annealing on hydrogen bonding in compensated polycrystalline silicon thin films Saleh, R.
 2005
 487 1-2 p. 89-92
4 p.
 artikel
25 Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors Pereira, L.
 2005
 487 1-2 p. 102-106
5 p.
 artikel
26 Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors Khalafalla, M.A.H.
 2005
 487 1-2 p. 255-259
5 p.
 artikel
27 Investigation of CuInZnSe2 thin films for solar cell applications Gremenok, V.F.
 2005
 487 1-2 p. 193-198
6 p.
 artikel
28 Investigation of defect structures in multi-crystalline silicon by laser scattering tomography Naumann, M.
 2005
 487 1-2 p. 188-192
5 p.
 artikel
29 Large grain polycrystalline Si thin films by nucleation-controlled chemical vapor deposition using intermittent source gas supply Yamazaki, Tsutomu
 2005
 487 1-2 p. 26-30
5 p.
 artikel
30 Laser crystallized multicrystalline silicon thin films on glass Andrä, G.
 2005
 487 1-2 p. 77-80
4 p.
 artikel
31 Lateral variations of optoelectronic quality of Cu(In1–x Ga x )Se2 in the submicron-scale Gütay, L.
 2005
 487 1-2 p. 8-13
6 p.
 artikel
32 Modification of electrical properties of CdS x Se1−x films by hard irradiation and nanostructuring Saad, A.M.
 2005
 487 1-2 p. 202-204
3 p.
 artikel
33 Multicrystalline silicon for solar cells Möller, H.J.
 2005
 487 1-2 p. 179-187
9 p.
 artikel
34 Nanocrystalline silicon films grown by Low Energy Plasma Enhanced Chemical Vapor Deposition for optoelectronic applications Binetti, S.
 2005
 487 1-2 p. 19-25
7 p.
 artikel
35 Nonradiative recombination and band bending of p-Si(100) surfaces during electrochemical deposition of polycrystalline ZnO Rappich, J.
 2005
 487 1-2 p. 157-161
5 p.
 artikel
36 Phase segregation in laser crystallized polycrystalline SiGe thin films Weizman, M.
 2005
 487 1-2 p. 72-76
5 p.
 artikel
37 Polycrystalline GaN for light emitter and field electron emitter applications Hasegawa, S.
 2005
 487 1-2 p. 260-267
8 p.
 artikel
38 Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices Pimentel, A.
 2005
 487 1-2 p. 212-215
4 p.
 artikel
39 Preface Nickel, Norbert H.
 2005
 487 1-2 p. 1-
1 p.
 artikel
40 Preparation and characterization of indium tin oxide thin films for their application as gas sensors Vaishnav, V.S.
 2005
 487 1-2 p. 277-282
6 p.
 artikel
41 Preparation and photosensitivity investigation of n-GaSe/p-CuIn3Se5 heterostructures Bodnar, I.V.
 2005
 487 1-2 p. 199-201
3 p.
 artikel
42 Production solutions in excimer laser thin film crystallization Brune, J.
 2005
 487 1-2 p. 85-88
4 p.
 artikel
43 Pulsed laser crystallization of silicon–germanium films Sameshima, T.
 2005
 487 1-2 p. 67-71
5 p.
 artikel
44 Pulsed laser crystallization of very thin silicon films Sameshima, T.
 2005
 487 1-2 p. 63-66
4 p.
 artikel
45 Recent advances in ZnO transparent thin film transistors Fortunato, E.
 2005
 487 1-2 p. 205-211
7 p.
 artikel
46 Recombination at silicon dangling bonds Boehme, C.
 2005
 487 1-2 p. 132-136
5 p.
 artikel
47 Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering Canhola, P.
 2005
 487 1-2 p. 271-276
6 p.
 artikel
48 Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHz Raniero, L.
 2005
 487 1-2 p. 170-173
4 p.
 artikel
49 Short channel effects in polysilicon thin film transistors Fortunato, G.
 2005
 487 1-2 p. 221-226
6 p.
 artikel
50 Simulation of carbon containing complexes at silicon–silicon grain boundaries in cluster approximation Pushkarchuk, A.L.
 2005
 487 1-2 p. 142-146
5 p.
 artikel
51 Solid phase post-treatment of polysilicon films by a continuous argon laser Michaud, J.F.
 2005
 487 1-2 p. 81-84
4 p.
 artikel
52 Stable p-channel polysilicon thin film transistors fabricated by laser doping technique Di Gaspare, A.
 2005
 487 1-2 p. 232-236
5 p.
 artikel
53 Structural and optical properties of AgIn5S8 films prepared by pulsed laser deposition Bodnar, I.V.
 2005
 487 1-2 p. 31-34
4 p.
 artikel
54 Structural defects and photoluminescence of epitaxial Si films grown at low temperatures Petter, K.
 2005
 487 1-2 p. 137-141
5 p.
 artikel
55 Subject Index of Volume 487 2005
 487 1-2 p. 290-294
5 p.
 artikel
56 The effect of generation–recombination mechanisms on the transient behavior of polycrystalline silicon transistors Papaioannou, G.J.
 2005
 487 1-2 p. 247-251
5 p.
 artikel
57 Theoretical description of hopping transport in disordered materials Baranovskii, S.D.
 2005
 487 1-2 p. 2-7
6 p.
 artikel
58 Thermal degradation of low temperature poly-Si TFT Fuyuki, Takashi
 2005
 487 1-2 p. 216-220
5 p.
 artikel
59 Thin-film polycrystalline silicon solar cells on ceramic substrates by aluminium-induced crystallization Gordon, I.
 2005
 487 1-2 p. 113-117
5 p.
 artikel
60 Top-gate microcrystalline silicon TFTs processed at low temperature (<200 °C) Saboundji, A.
 2005
 487 1-2 p. 227-231
5 p.
 artikel
                             60 gevonden resultaten
 
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