| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of SnO2 and SnO2:Cu thin films for gas sensor applications
|
Kissine, Vladimir V.
|
|
1999
|
348 |
1-2 |
p. 304-311
8 p.
|
artikel
|
| 2 |
A galvanostatic study of the electrodeposition of polypyrrole into porous silicon
|
Moreno, J.D.
|
|
1999
|
348 |
1-2 |
p. 152-156
5 p.
|
artikel
|
| 3 |
Ambient-dried SiO2 aerogel thin films and their dielectric application
|
Yang, Hee-Sun
|
|
1999
|
348 |
1-2 |
p. 69-73
5 p.
|
artikel
|
| 4 |
c-Axis oriented sol–gel (Pb,Ca)TiO3 ferroelectric thin films on Pt/MgO
|
Jiménez, R.
|
|
1999
|
348 |
1-2 |
p. 253-260
8 p.
|
artikel
|
| 5 |
Charge transport and trapping in BaTiO3 thin films flash evaporated on Si and SiO2/Si
|
Avila, R.E
|
|
1999
|
348 |
1-2 |
p. 44-48
5 p.
|
artikel
|
| 6 |
Colloidal sol-gel ITO films on tube grown silicon
|
Stoica, Tionica F.
|
|
1999
|
348 |
1-2 |
p. 273-278
6 p.
|
artikel
|
| 7 |
Compositional variations of sputter deposited Ti/W barrier layers on substrates with pronounced surface topography
|
Jonsson, L.B.
|
|
1999
|
348 |
1-2 |
p. 227-232
6 p.
|
artikel
|
| 8 |
Conduction of metal–isolator–semiconductor structures with granular silicon thin films
|
Pennelli, Giovanni
|
|
1999
|
348 |
1-2 |
p. 157-164
8 p.
|
artikel
|
| 9 |
Control of the growth of ordered C60 films by chemical modification of Pt(111) surfaces
|
He, Hong
|
|
1999
|
348 |
1-2 |
p. 30-37
8 p.
|
artikel
|
| 10 |
Copper nitride thin films prepared by reactive radio-frequency magnetron sputtering
|
Nosaka, Toshikazu
|
|
1999
|
348 |
1-2 |
p. 8-13
6 p.
|
artikel
|
| 11 |
Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P
|
Saß, T
|
|
1999
|
348 |
1-2 |
p. 196-201
6 p.
|
artikel
|
| 12 |
Cu double layer on Mo(110): phase transition
|
van der Merwe, J.H
|
|
1999
|
348 |
1-2 |
p. 285-293
9 p.
|
artikel
|
| 13 |
Effect of silicon addition on microstructure and mechanical property of titanium nitride film prepared by plasma-assisted chemical vapor deposition
|
Park, Bum Hee
|
|
1999
|
348 |
1-2 |
p. 210-214
5 p.
|
artikel
|
| 14 |
Effects of homo-epitaxial LaAlO3 layer on microstructural properties of SrTiO3 films grown on LaAlO3 substrates
|
Lu, P
|
|
1999
|
348 |
1-2 |
p. 38-43
6 p.
|
artikel
|
| 15 |
Effects of hydrogen partial pressure on the structure and properties of sputtered silicon layers
|
Achiq, A
|
|
1999
|
348 |
1-2 |
p. 74-78
5 p.
|
artikel
|
| 16 |
Electrical energy released from structure of Al/polyimide LB film/Au
|
Hiro, Taro
|
|
1999
|
348 |
1-2 |
p. 248-252
5 p.
|
artikel
|
| 17 |
Electrical properties of SiO2–(n) GaAs interface on the basis of measurements of MIS structure capacitance and conductance
|
Kochowski, S.
|
|
1999
|
348 |
1-2 |
p. 180-187
8 p.
|
artikel
|
| 18 |
Electrochromism of anodic oxide film on TiN coating in aqueous and non-aqueous electrolytes
|
Azumi, Kazuhisa
|
|
1999
|
348 |
1-2 |
p. 134-140
7 p.
|
artikel
|
| 19 |
Enhanced optical performance of aluminum films by copper inclusion
|
Kylner, C.
|
|
1999
|
348 |
1-2 |
p. 222-226
5 p.
|
artikel
|
| 20 |
Erratum
|
|
|
1999
|
348 |
1-2 |
p. 312-313
2 p.
|
artikel
|
| 21 |
Experimental evidence of boron induced charged defects in amorphous silicon materials
|
Caputo, D
|
|
1999
|
348 |
1-2 |
p. 79-83
5 p.
|
artikel
|
| 22 |
Formation of patterned PbS and ZnS films on self-assembled monolayers
|
Meldrum, Fiona C.
|
|
1999
|
348 |
1-2 |
p. 188-195
8 p.
|
artikel
|
| 23 |
Frictional properties of poly(N-polyfluoroalkylacrylamides) Langmuir–Blodgett films
|
Fan, Fengqiu
|
|
1999
|
348 |
1-2 |
p. 238-241
4 p.
|
artikel
|
| 24 |
Growth, structure, dielectric and AC conduction properties of solution grown PVA films
|
Chandar Shekar, B
|
|
1999
|
348 |
1-2 |
p. 122-129
8 p.
|
artikel
|
| 25 |
Hard amorphous CSi x N y thin films deposited by RF nitrogen plasma assisted pulsed laser ablation of mixed graphite/Si3N4-targets
|
Thärigen, T
|
|
1999
|
348 |
1-2 |
p. 103-113
11 p.
|
artikel
|
| 26 |
Heteroepitaxy of PbS on porous silicon
|
Levchenko, V.I
|
|
1999
|
348 |
1-2 |
p. 141-144
4 p.
|
artikel
|
| 27 |
High quality ZnS:Mn thin films grown by quasi-rheotaxy for electroluminescent devices
|
Romeo, N.
|
|
1999
|
348 |
1-2 |
p. 49-55
7 p.
|
artikel
|
| 28 |
Index
|
|
|
1999
|
348 |
1-2 |
p. 316-320
5 p.
|
artikel
|
| 29 |
Index
|
|
|
1999
|
348 |
1-2 |
p. 314-315
2 p.
|
artikel
|
| 30 |
Influence of deposition condition and hydrogen on amorphous-to-polycrystalline SiCN films
|
Gong, Zheng
|
|
1999
|
348 |
1-2 |
p. 114-121
8 p.
|
artikel
|
| 31 |
Influence of lamellae thickness on the corrosion behaviour of multilayered PVD TiN/CrN coatings
|
Nordin, Maria
|
|
1999
|
348 |
1-2 |
p. 202-209
8 p.
|
artikel
|
| 32 |
KrF laser CVD of titanium oxide from titanium tetraisopropoxide
|
Watanabe, Akio
|
|
1999
|
348 |
1-2 |
p. 63-68
6 p.
|
artikel
|
| 33 |
Magnetic and morphological properties of ultrathin Fe layers in Zr/Fe/Zr trilayer structures
|
Castaño, F.J.
|
|
1999
|
348 |
1-2 |
p. 233-237
5 p.
|
artikel
|
| 34 |
Monolayer and Langmuir–Blodgett films of bilirubin dihexadecyl ester
|
Ouyang, Jian-Ming
|
|
1999
|
348 |
1-2 |
p. 242-247
6 p.
|
artikel
|
| 35 |
Noble metal additive modulation of gas sensitivity of BaSnO3, explained by a work function based model
|
Reddy, C.V.Gopal
|
|
1999
|
348 |
1-2 |
p. 261-265
5 p.
|
artikel
|
| 36 |
NO2 sensor based on InP epitaxial thin layers
|
Battut, V.
|
|
1999
|
348 |
1-2 |
p. 266-272
7 p.
|
artikel
|
| 37 |
Optical properties of film–substrate systems with an anisotropic, spatially varying dielectric function of the surface layer
|
Jungk, G.
|
|
1999
|
348 |
1-2 |
p. 279-284
6 p.
|
artikel
|
| 38 |
Performance of vertical power devices with contact-level copper metallization
|
Cook, Jeffrey
|
|
1999
|
348 |
1-2 |
p. 14-21
8 p.
|
artikel
|
| 39 |
Porosity measurements by a gas penetration method and other techniques applied to membrane characterization
|
Palacio, L.
|
|
1999
|
348 |
1-2 |
p. 22-29
8 p.
|
artikel
|
| 40 |
Preparation and properties of Bi4Ti3O12 thin films grown at low substrate temperatures
|
Yamaguchi, Masaki
|
|
1999
|
348 |
1-2 |
p. 294-298
5 p.
|
artikel
|
| 41 |
Preparation of alumina films from a new sol–gel route
|
Fu, Qiang
|
|
1999
|
348 |
1-2 |
p. 99-102
4 p.
|
artikel
|
| 42 |
Properties of reactively sputtered WN x as Cu diffusion barrier
|
Suh, Bong-Seok
|
|
1999
|
348 |
1-2 |
p. 299-303
5 p.
|
artikel
|
| 43 |
Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition
|
Takikawa, Hirofumi
|
|
1999
|
348 |
1-2 |
p. 145-151
7 p.
|
artikel
|
| 44 |
Properties of Z and E isomers of azocrown ethers in monolayer assemblies at the air–water interface
|
Zawisza, Izabella
|
|
1999
|
348 |
1-2 |
p. 173-179
7 p.
|
artikel
|
| 45 |
Solderable film for bottom side of semiconductor chips
|
Zelenka, J
|
|
1999
|
348 |
1-2 |
p. 1-2
2 p.
|
artikel
|
| 46 |
Structural and electrical properties of rf-sputtered RuO2 films having different conditions of preparation
|
Lim, Won Taeg
|
|
1999
|
348 |
1-2 |
p. 56-62
7 p.
|
artikel
|
| 47 |
Structural and optical properties of sputtered ZnO films
|
Bachari, E.M
|
|
1999
|
348 |
1-2 |
p. 165-172
8 p.
|
artikel
|
| 48 |
Studies of highly oriented CeO2 films grown on Si(111) by pulsed laser deposition
|
Hirschauer, B
|
|
1999
|
348 |
1-2 |
p. 3-7
5 p.
|
artikel
|
| 49 |
The contribution of H+ ion etching during the initial deposition stage to the orientation grade of diamond films
|
Zhang, W.J.
|
|
1999
|
348 |
1-2 |
p. 84-89
6 p.
|
artikel
|
| 50 |
The effect of additives on the viscosity of dimethylaluminum hydride and FTIR diagnostics of the gas-phase reaction
|
Lee, Jung-Hyun
|
|
1999
|
348 |
1-2 |
p. 130-133
4 p.
|
artikel
|
| 51 |
The effects of particle pollution on the mechanical behaviour of multilayered systems
|
Poulingue, M.
|
|
1999
|
348 |
1-2 |
p. 215-221
7 p.
|
artikel
|
| 52 |
ZrO2 film growth by chemical vapor deposition using zirconium tetra-tert-butoxide
|
Cameron, M.A.
|
|
1999
|
348 |
1-2 |
p. 90-98
9 p.
|
artikel
|
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