nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comparison of molecular beam epitaxy and ion-beam sputtering for growth of CdTe and HgCdTe films
|
Francombe, M.H. |
|
1989 |
168 |
2 |
p. 307-323 17 p. |
artikel |
2 |
A microstructural study of oriented polymer-zinc diethyldithiocarbamate thin films
|
Norian, K.H. |
|
1989 |
168 |
2 |
p. 353-362 10 p. |
artikel |
3 |
Analysis of the interface of bismuth with polycrystalline selenium thin films
|
Bernede, J.C. |
|
1989 |
168 |
2 |
p. 249-261 13 p. |
artikel |
4 |
Author index
|
|
|
1989 |
168 |
2 |
p. 371-372 2 p. |
artikel |
5 |
Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator
|
Ullrich, B. |
|
1989 |
168 |
2 |
p. 157-163 7 p. |
artikel |
6 |
Characterization of an N-octadecylacrylamide Langmuir-Blodgett film for application as an electron beam resist
|
Miyashita, Tokuji |
|
1989 |
168 |
2 |
p. L47-L49 nvt p. |
artikel |
7 |
Characterization of a plasma-sprayed YBaCuO superconductor
|
Wen, L.S. |
|
1989 |
168 |
2 |
p. 231-238 8 p. |
artikel |
8 |
Characterization of surface layers produced by ion implantation of nitrogen in bulk aluminium
|
McCune, R.C. |
|
1989 |
168 |
2 |
p. 263-280 18 p. |
artikel |
9 |
Contents of vol. 168
|
|
|
1989 |
168 |
2 |
p. 373-375 3 p. |
artikel |
10 |
Corrigendum
|
|
|
1989 |
168 |
2 |
p. 369-370 2 p. |
artikel |
11 |
Deposition of stoichiometric MoS2 thin films by pulsed laser evaporation
|
Donley, M.S. |
|
1989 |
168 |
2 |
p. 335-344 10 p. |
artikel |
12 |
Effect of ion bombardment during growth on the electrical resistivity of magnetron-sputtered carbon films
|
Petrov, I. |
|
1989 |
168 |
2 |
p. 239-248 10 p. |
artikel |
13 |
Effects of CoCrAlY coating on microstructural stability and creep behavior of a nickel-base superalloy
|
Chaki, T.K. |
|
1989 |
168 |
2 |
p. 207-220 14 p. |
artikel |
14 |
Electrical properties of carbon black-polyimide thick films
|
Norian, K.H. |
|
1989 |
168 |
2 |
p. 169-174 6 p. |
artikel |
15 |
Electronic structure of plasma-deposited amorphous Si-C alloy films
|
Tyczkowski, Jacek |
|
1989 |
168 |
2 |
p. 175-184 10 p. |
artikel |
16 |
Factorial experimental investigation of plasma-enhanced chemical vapor deposition of silicon nitride thin films
|
Yoo, C.-S. |
|
1989 |
168 |
2 |
p. 281-289 9 p. |
artikel |
17 |
Growth and characterization of ZnO films deposited on a monolithic Si3N4-SiO2-Si configuration
|
Panwar, B.S. |
|
1989 |
168 |
2 |
p. 291-305 15 p. |
artikel |
18 |
Moisture patches in Al2O3/SiO2 quarterwave reflectors studied by fringes of equal chromatic order like experiments
|
Uhlig, H. |
|
1989 |
168 |
2 |
p. L43-L46 nvt p. |
artikel |
19 |
On the kinetics of redistribution of vacancies in f.c.c. metal films under high rate heating
|
Markevich, M.I. |
|
1989 |
168 |
2 |
p. 363-368 6 p. |
artikel |
20 |
Scratch adhesion test of magnetron-sputtered copper coatings on aluminium substrates: Effects of the surface preparation
|
Cailler, M. |
|
1989 |
168 |
2 |
p. 193-205 13 p. |
artikel |
21 |
Structure and preferred orientations in ion-plated niobium films and correlation of the substrate bias voltage with calculated strain energies
|
Datta, P.K. |
|
1989 |
168 |
2 |
p. 221-230 10 p. |
artikel |
22 |
Tailored target approach to the deposition of gradient index optical filters
|
Harker, A.B. |
|
1989 |
168 |
2 |
p. 185-192 8 p. |
artikel |
23 |
Thallium thin film oxidation investigated by an optical absorption method
|
Pankajakshan, V.S. |
|
1989 |
168 |
2 |
p. 165-168 4 p. |
artikel |
24 |
The direct photochemical vapour deposition of SiO2 from Si2H6 and N2O3 mixtures
|
Bhatnagar, Y.K. |
|
1989 |
168 |
2 |
p. 345-352 8 p. |
artikel |
25 |
Thermal degradation of TiSi2/poly-Si gate electrodes
|
Nygren, S. |
|
1989 |
168 |
2 |
p. 325-334 10 p. |
artikel |