| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A metal (organic bilayer) metal capacitor
|
Geddes, N.J.
|
|
1989
|
168 |
1 |
p. 151-156
6 p.
|
artikel
|
| 2 |
A secondary ion mass spectrometry analysis of hydrogen reactions on disordered InSb(110) surfaces
|
Wolf, B.
|
|
1989
|
168 |
1 |
p. 71-79
9 p.
|
artikel
|
| 3 |
Caractérisation de films minces de molybdène métallique déposé sur une face (100) de monoxyde de cobalt CoO
|
Steinbrunn, A.
|
|
1989
|
168 |
1 |
p. 61-69
9 p.
|
artikel
|
| 4 |
Correlation of refractive index and silicon content of silicon oxynitride films
|
Knolle, W.R.
|
|
1989
|
168 |
1 |
p. 123-132
10 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
1989
|
168 |
1 |
p. iii-
1 p.
|
artikel
|
| 6 |
Ellipsometric study of low-temperature silicon surface cleaning during the process of reactive ionized cluster beam deposition
|
Koshinaka, M.
|
|
1989
|
168 |
1 |
p. 103-111
9 p.
|
artikel
|
| 7 |
Epitaxial growth of WO3 thin films on MgO and Al2O3
|
Kobayashi, Y.
|
|
1989
|
168 |
1 |
p. 133-139
7 p.
|
artikel
|
| 8 |
Influence of anion incorporation and argon implantation of substrate on ionic transport through anodic Nb2O5 films studied by X-ray photoelectron spectroscopy measurements
|
Jouve, G.
|
|
1989
|
168 |
1 |
p. 21-34
14 p.
|
artikel
|
| 9 |
Magnetic properties and defects in polycrystalline nickel films II: Effects of ion implantation
|
Dinca, G.
|
|
1989
|
168 |
1 |
p. 1-9
9 p.
|
artikel
|
| 10 |
On the blocking behaviour of mesa high voltage power devices passivated by semi-insulating polycrystalline silicon films
|
Burte, Edmund P.
|
|
1989
|
168 |
1 |
p. 41-50
10 p.
|
artikel
|
| 11 |
On the growth of CuInS2 thin films by three-source evaporation
|
Wu, Y.L.
|
|
1989
|
168 |
1 |
p. 113-122
10 p.
|
artikel
|
| 12 |
Optically matched capping layers for CO2 laser recrystallization of polysilicon
|
Steinberger, H.
|
|
1989
|
168 |
1 |
p. 35-40
6 p.
|
artikel
|
| 13 |
Plasma-enhanced deposition of amorphous silicon at temperatures between 300 and 500 °C
|
Claassen, W.A.P.
|
|
1989
|
168 |
1 |
p. 89-101
13 p.
|
artikel
|
| 14 |
Preparation of highly oriented Langmuir-Blodgett films: Heat treatment of monolayers at the air-water interface
|
Miyano, Kenjiro
|
|
1989
|
168 |
1 |
p. 141-149
9 p.
|
artikel
|
| 15 |
Study of thin anodic SiO2 layers on degenerate silicon by inelastic electron tunnelling spectroscopy
|
Salace, G.
|
|
1989
|
168 |
1 |
p. 11-20
10 p.
|
artikel
|
| 16 |
Synthesis of goldcarbon composites by simultaneous sputtering and plasma polymerization of propane in r.f. capacitively coupled diode system (13.56 MHz)
|
Despax, B.
|
|
1989
|
168 |
1 |
p. 81-88
8 p.
|
artikel
|
| 17 |
The electrophysical properties of anodically grown silicon oxide films
|
Mende, G.
|
|
1989
|
168 |
1 |
p. 51-60
10 p.
|
artikel
|
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