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                             45 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A chromium carbide phase with B1 structure in thin films prepared by ion plating Bewilogua, K.
1988
167 1-2 p. 233-244
12 p.
artikel
2 A new approach to the fabrication of cuprous sulphide-cadmium sulphide solar cells Cumberbatch, T.J.
1988
167 1-2 p. 169-174
6 p.
artikel
3 A surface plasmon-polariton study of the dielectric constants of reactive metals: Aluminium Tillin, M.D.
1988
167 1-2 p. 73-84
12 p.
artikel
4 A transmission electron microscopy study of the crystallization of ion-beam-mixed Pd80Si20 amorphous thin films Janicki, A.J.
1988
167 1-2 p. 141-148
8 p.
artikel
5 Author index 1988
167 1-2 p. 317-318
2 p.
artikel
6 Cathodic arc plasma deposition technology Randhawa, H.
1988
167 1-2 p. 175-186
12 p.
artikel
7 Changes in the properties of glow-discharge-deposited microcrystalline silicon films with thickness De, S.C.
1988
167 1-2 p. 121-128
8 p.
artikel
8 Chemically deposited Cu2O thin film as an oxygen pressure sensor Ristov, M.
1988
167 1-2 p. 309-316
8 p.
artikel
9 Contamination ionique des couches minces de silice par des solutions NaI et KCl Choquet, C.
1988
167 1-2 p. 45-56
12 p.
artikel
10 Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver Hashimoto, Mituru
1988
167 1-2 p. 223-232
10 p.
artikel
11 Crystallization of amorphous silicon films using a multistep thermal annealing process Korin, E.
1988
167 1-2 p. 101-106
6 p.
artikel
12 Determination of the composition of sputtered silcon oxynitride films by Auger electron spectroscopy and Rutherford backscattering spectrometry Reinhardt, Herwig
1988
167 1-2 p. L1-L6
nvt p.
artikel
13 Editorial Board 1988
167 1-2 p. iii-
1 p.
artikel
14 Effect of addition of fluorine to phosphorous-doped tin oxide films Upadhyay, J.P.
1988
167 1-2 p. L7-L10
nvt p.
artikel
15 Effect of temperature rise on the growth rate of anodic SiO2 Katircioǧlu, B.
1988
167 1-2 p. 129-140
12 p.
artikel
16 Electrical resistivity and structural changes in amorphous Ge1−x Al x thin films under thermal annealing Catalina, F.
1988
167 1-2 p. 57-66
10 p.
artikel
17 Frequency-dependent conductivity in vanadium pentoxide gel Murawski, L.
1988
167 1-2 p. 67-72
6 p.
artikel
18 High efficiency front and rear surface silver reflectors Viswanathan, M.
1988
167 1-2 p. 291-298
8 p.
artikel
19 High reflectance bands of some simple two-material dielectric multilayers Leś, Z.
1988
167 1-2 p. 33-44
12 p.
artikel
20 Hydrogen incorporation scheme in a-Si:H prepared by photochemical vapour deposition Kumeda, Minoru
1988
167 1-2 p. L23-L26
nvt p.
artikel
21 Impurity distribution of very thin permalloy films Kitada, Masahiro
1988
167 1-2 p. L39-L41
nvt p.
artikel
22 Influence of oxides at metal electrode-amorphous silicon interface on solar cell characteristics Suzuki, K.
1988
167 1-2 p. 85-94
10 p.
artikel
23 Intermetallic phase formation in aluminium and iron thin film systems Csanády, A.
1988
167 1-2 p. 203-216
14 p.
artikel
24 Magnetic properties and defects in polycrystalline nickel films I: Microstructure-related magnetic anisotropy Belu-Marian, A.
1988
167 1-2 p. 1-12
12 p.
artikel
25 Mass spectrometric study of gas evolution from plasma-deposited fluorohydrogenated amorphous carbon films on heating Sah, R.E.
1988
167 1-2 p. 255-260
6 p.
artikel
26 New results in d.c. reactive magnetron deposition of TiN x films Musil, J.
1988
167 1-2 p. 107-120
14 p.
artikel
27 Oxide film formation and thickening on titanium in water el Din, A.M.Shams
1988
167 1-2 p. 269-280
12 p.
artikel
28 Preparation and characterization of chemically deposited CuInSe2 films Murali, K.R.
1988
167 1-2 p. L19-L22
nvt p.
artikel
29 Preparation of copper indium disulphide films by airless spraying Belgacem, S.
1988
167 1-2 p. 217-222
6 p.
artikel
30 Preparation of transparent and conducting indium oxide films by solution pyrolysis of dibutylindium thiolate Nomura, Ryoki
1988
167 1-2 p. L27-L30
nvt p.
artikel
31 Rapid IR lamp alloying of nickel-based ohmic contacts on n-GaAs Gill, Sukhdev S.
1988
167 1-2 p. 161-168
8 p.
artikel
32 Reflectivity of sputtered aluminum alloy films Rieck, U.
1988
167 1-2 p. L35-L38
nvt p.
artikel
33 R.f.-sputtered indium tin oxide films on water-cooled substrates Mansingh, Abhai
1988
167 1-2 p. L11-L14
nvt p.
artikel
34 Secondary electron emission studies on MgO films Ushio, Y.
1988
167 1-2 p. 299-308
10 p.
artikel
35 Silicide formation in the Pt/a-Si:H system Ito, Taichiro
1988
167 1-2 p. 187-194
8 p.
artikel
36 Space charge and electret behaviour in anodic Ta2O5 films Montero, I.
1988
167 1-2 p. 95-100
6 p.
artikel
37 Säulenwchstum bei aufgedampften schichten Fiedler Und, R.
1988
167 1-2 p. 281-290
10 p.
artikel
38 Temperature and thickness dependence of the resistivity of thin polycrystalline aluminium, cobalt, nickel, palladium, silver and gold films De Vries, J.W.C.
1988
167 1-2 p. 25-32
8 p.
artikel
39 The effect of argon during the plasma-assisted chemical vapor deposition of TiN Hilton, M.R.
1988
167 1-2 p. L31-L34
nvt p.
artikel
40 The influence of photoangular effect on dynamic characteristics of the current in CdS(Cu,Cl) thin films Porada, Z.
1988
167 1-2 p. L15-L18
nvt p.
artikel
41 The sticking of magnesium on ω-tricosenoic acid multilayers deposited by the langmuir-blodgett technique Geddes, N.J.
1988
167 1-2 p. 261-268
8 p.
artikel
42 Transient currents in conditions of continuous injection in thin insulating layers with spatially non-homogeneous trap distribution Rybicki, J.
1988
167 1-2 p. 13-24
12 p.
artikel
43 Étude par microdiffraction des particules icosaédriques de nickel obtenues par réduction d'un sel en phase liquide Brieu, M.
1988
167 1-2 p. 149-160
12 p.
artikel
44 Use of binuclear organometallic compounds in chemical vapour deposition Feurer, R.
1988
167 1-2 p. 195-202
8 p.
artikel
45 X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry study of anion incorporation in anodically grown films Magnussen, N.
1988
167 1-2 p. 245-254
10 p.
artikel
                             45 gevonden resultaten
 
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