nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analysis of interdigitated thin film capacitors
|
Binotto, L. |
|
1972 |
12 |
2 |
p. 325-333 9 p. |
artikel |
2 |
Analysis of ultrathin oxide growth on indium
|
Eldridge, J.M. |
|
1972 |
12 |
2 |
p. 447-451 5 p. |
artikel |
3 |
A new structure of sputtered tantalum
|
Das, G. |
|
1972 |
12 |
2 |
p. 305-311 7 p. |
artikel |
4 |
An experimental study of the growth kinetics of vapour-deposited thin metal films
|
Robins, J.L. |
|
1972 |
12 |
2 |
p. 255-259 5 p. |
artikel |
5 |
Anomalous hysteresis shape of thin VO2 layers
|
Haidinger, W. |
|
1972 |
12 |
2 |
p. 433-438 6 p. |
artikel |
6 |
Anomalous large grains in alloyed aluminum thin films I. Secondary grain growth in aluminum-copper films
|
Gangulee, A. |
|
1972 |
12 |
2 |
p. 399-402 4 p. |
artikel |
7 |
A plasma source for the production of thin oxide films
|
Hecq, M. |
|
1972 |
12 |
2 |
p. 453-456 4 p. |
artikel |
8 |
Applications of thin films in commercial electronics
|
Krüger, Günter |
|
1972 |
12 |
2 |
p. 335-339 5 p. |
artikel |
9 |
Author index
|
|
|
1972 |
12 |
2 |
p. 457-458 2 p. |
artikel |
10 |
Bulk-like InSb films by hot-wire zone crystallization
|
Clawson, A.R. |
|
1972 |
12 |
2 |
p. 291-294 4 p. |
artikel |
11 |
Comparative study of size effects in solid and liquid films
|
Guyon, Etienne |
|
1972 |
12 |
2 |
p. 355-366 12 p. |
artikel |
12 |
Corrigendum to volume 10
|
|
|
1972 |
12 |
2 |
p. S51- 1 p. |
artikel |
13 |
Direct observation of switching phenomena in memory-type materials by electron microscopy
|
Chaudhari, P. |
|
1972 |
12 |
2 |
p. 239-242 4 p. |
artikel |
14 |
Direct observations of epitaxial growth
|
Stowell, M.J. |
|
1972 |
12 |
2 |
p. 341-354 14 p. |
artikel |
15 |
Effects of electric field on the orientation and particle arrangement of gold deposits evaporated in Vacuo
|
Murayama, Yoichi |
|
1972 |
12 |
2 |
p. 287-290 4 p. |
artikel |
16 |
Erratum to volume 8
|
|
|
1972 |
12 |
2 |
p. S51- 1 p. |
artikel |
17 |
Evolution of nucleus size in the first stages of silver growth on graphite
|
Sacedón, J.L. |
|
1972 |
12 |
2 |
p. 267-271 5 p. |
artikel |
18 |
Experimental investigation of localized states in amorphous chalcogenide films
|
Boţilă, T. |
|
1972 |
12 |
2 |
p. 223-226 4 p. |
artikel |
19 |
Frequency-dependent conductivity and capacitance in chalcogenide thin films
|
Suntola, T. |
|
1972 |
12 |
2 |
p. 227-230 4 p. |
artikel |
20 |
Influence des conditions de préparation et de mesure sur les propriétés de transport à travers des couches minces de MgF2
|
Barriere, A. |
|
1972 |
12 |
2 |
p. S39-S42 4 p. |
artikel |
21 |
Influence of misfit dislocations on the alignment of epitaxial thin films
|
Matthews, J.W. |
|
1972 |
12 |
2 |
p. 243-246 4 p. |
artikel |
22 |
Investigation of the surface oxidation of metals in the sub-monolayer and monolayer range with the static method of secondary ion mass spectrometry
|
Benninghoven, A. |
|
1972 |
12 |
2 |
p. 439-442 4 p. |
artikel |
23 |
Magnetoresistance and structure of sputtered metal island films on dielectrics
|
Palatnik, L.S. |
|
1972 |
12 |
2 |
p. 247-253 7 p. |
artikel |
24 |
NaCl epitaxial films on mica
|
Missiroli, G.F. |
|
1972 |
12 |
2 |
p. S35-S37 3 p. |
artikel |
25 |
On the structure of amorphous Ge and Si
|
Rudee, M.L. |
|
1972 |
12 |
2 |
p. 207-210 4 p. |
artikel |
26 |
Quantum size effect and perspectives of its practical application
|
Elinson, M.I. |
|
1972 |
12 |
2 |
p. 383-397 15 p. |
artikel |
27 |
Quasi-static growth of PbS epitaxic films
|
Paic, M. |
|
1972 |
12 |
2 |
p. 419-425 7 p. |
artikel |
28 |
Recrystallization and excess free energy in thin silver films
|
Schmidt-Ihn, E |
|
1972 |
12 |
2 |
p. 273-278 6 p. |
artikel |
29 |
R.F. and D.C. reactive sputtering for crystalline and amorphous VO2 thin film deposition
|
Duchene, J. |
|
1972 |
12 |
2 |
p. 231-234 4 p. |
artikel |
30 |
R.F. sputtered β-tantalum and b.c.c. tantalum films
|
Schauer, A. |
|
1972 |
12 |
2 |
p. 313-317 5 p. |
artikel |
31 |
Role of surface hydroxyls in the nucleation of sputtered tantalum films
|
Feinstein, L.G. |
|
1972 |
12 |
2 |
p. S47-S49 3 p. |
artikel |
32 |
Status of thin film integrated circuit technology
|
Basseches, H. |
|
1972 |
12 |
2 |
p. 295-303 9 p. |
artikel |
33 |
Subject index
|
|
|
1972 |
12 |
2 |
p. 459-462 4 p. |
artikel |
34 |
Surface diffusion in thin film couples
|
Nenadović, T. |
|
1972 |
12 |
2 |
p. 411-417 7 p. |
artikel |
35 |
Surface diffusion of adatoms and clusters of gold on alkali halide cleavage planes
|
Schwabe, U. |
|
1972 |
12 |
2 |
p. 403-410 8 p. |
artikel |
36 |
Switching in Cu-Cu2S-CdS-Au sandwich structures and the migration of switching filaments
|
Billings, A.R. |
|
1972 |
12 |
2 |
p. 235-238 4 p. |
artikel |
37 |
The adsorption and nucleation of silver on tungsten (110)
|
Lo, C.M. |
|
1972 |
12 |
2 |
p. 261-266 6 p. |
artikel |
38 |
The effect of amorphous intermediate layers on the epitaxial growth of gold evaporated onto silver single crystals
|
Dümler, I. |
|
1972 |
12 |
2 |
p. 279-285 7 p. |
artikel |
39 |
The influence of annealing on the density of amorphous germanium films
|
Renner, O. |
|
1972 |
12 |
2 |
p. S43-S45 3 p. |
artikel |
40 |
The mechanical properties of anodic tantalum oxide films
|
Eliezer, D. |
|
1972 |
12 |
2 |
p. 319-323 5 p. |
artikel |
41 |
The oxidation of (100) single-crystal films of copper on (100) NaCl
|
Clarke Jr., E.G. |
|
1972 |
12 |
2 |
p. 443-446 4 p. |
artikel |
42 |
Thermopower behaviour of amorphous versus crystalline Ge and GeTe films
|
Chopra, K.L. |
|
1972 |
12 |
2 |
p. 211-215 5 p. |
artikel |
43 |
The role of plasma negative ions in plasma anodization
|
Olive, G. |
|
1972 |
12 |
2 |
p. 427-432 6 p. |
artikel |
44 |
The study of amorphous and crystalline silicon thin films by sputter-ion source mass spectrometry
|
Feldman, Charles |
|
1972 |
12 |
2 |
p. 217-222 6 p. |
artikel |
45 |
Transport phenomena in thin films
|
Hill, Robert M. |
|
1972 |
12 |
2 |
p. 367-381 15 p. |
artikel |
46 |
Use of thin films for studying order-disorder transformations
|
Gandais, M. |
|
1972 |
12 |
2 |
p. 201-205 5 p. |
artikel |